摘要:
An electrolysis apparatus is disclosed as including an electrolysis cell (10) accommodating therein electrolyte (70), a heating section (20) located around the electrolysis cell to heat the electrolysis cell, an electrode section (30) having an electrode unit (30a) immersed in the electrolyte and a power-conducting electrode portion (30b) supporting the electrode unit to apply the electrode unit with electric power, a lid body (45) defining a space region (40) in an area above the electrolysis cell, an exhaust section (50) located in the lid body to allow the space region to communicate with an outside for exhausting by-product gas, resulting from electrolysis of the electrolyte, from the space region to the outside, and an evaporation restraining member (60, 80, 80A, 80B, 90, 90A, 90B) floating on a liquid surface of the electrolyte so as to cover the liquid surface of the electrolyte for permitting by-product gas, resulting from electrolysis of the electrolyte, to escape to the space region while restraining the electrolyte from evaporating.
摘要:
A silicon manufacturing apparatus is disclosed as having a reactor tube (10) in which reaction occurs between zinc and silicon compound, zinc supply pipes (30, 30′) having heating portions to heat zinc for generating zinc gas and zinc ejecting portions ejecting and supplying zinc gas to the reactor tube, a zinc feeding section (40A, 40B) feeding zinc into the zinc supply pipes, a silicon compound supply pipe (50, 50A, 50B, 50C, 50c, 54, 57, 90) having a silicon compound ejecting portion to eject and supply silicon compound gas to the reactor tube so as to allow silicon compound gas to flow from a lower side to an upper side in the reactor tube, and a heating furnace (20) disposed outside the reactor tube to define a heating region (a) accommodating therein a part of the reactor tube, the heating portion and the zinc ejecting section for heating the same so as to allow the reactor tube, through which zinc gas and silicon compound gas flow, to have the temperature distribution such that a temperature closer to a central axis (C) of the reactor tube is lower than that closer to a side circumferential wall of the reactor tube.
摘要:
A network management system includes network stations each having a power source and a power switch to turn the power source on and off, a network management station to monitor the network stations, and a communication network enabling connections between the network stations and the network management station. When turned off by the power switch, the network station enables communication with the network management station and then sends an event to notify the power-off state thereto. This enables the network management system to display whether the communication failure is caused by a network failure or the power-off of the network station.
摘要:
A web phone dialer system that can easily transmit a call to a person, even if the telephone number of the person is changed. The web phone dialer system includes a web server, a sending client, and a receiving client each being connected to each other through a network. The web server includes a telephone directory database which stores a database file having a plurality of records each including an assignment, name, and telephone number of a parson operating a receiving client and an IP address, and mail address if the receiving client. The web server in response to an inquiry from a sending client, including at least one of an assignment and name of a person to which communication is to be established, searches the telephone directory database to obtain the telephone number, IP address and mail address of the person. The sending client use the telephone number to call.
摘要:
In a loop communication system in which a plurality of stations connected to a pair of loop transmission lines comprised of a main transmission line and a preparatory transmission line communicate with each other through the loop transmission lines, one of the transmission lines has to be looped back to the other when failures occur in both the transmission lines by escaping from a point at which the failures occur. When the master station sequentially transmits loop back command signals to slave stations connected to the loop transmission lines, it takes into consideration the number of slave stations present between the master station and an interrogated slave station inclusive thereof so as to vary the monitoring time in accordance with a turn around time required for the master station to receive a response signal sent from the interrogated slave station being in receipt of a loop back command signal, thereby reducing the time for loop back.
摘要:
A method and apparatus for producing multilayer fibrous mats is provided which can form alternate short and long fiber layers continuously on a single forming endless wire cloth. The layers are brought together under the influence of suction air and are held together by interfiber bonds at their interfaces. The apparatus is composed of long fiber defibrators and a short fiber disperser unit placed above the forming endless wire cloth. First, a thin web of long fibers is formed on the forming wire cloth and then a short fiber mat is formed on top of the said long fiber web. At this point, the short fibers to a certain extent are pulled into and among the long fibers of the thin long fiber web by the use of suction air thus forming a long fiber layer, long-short fiber interface layer and a short fiber layer mat construction.
摘要:
An apparatus (100) for fabricating a semiconductor thin film includes: substrate surface pretreatment means (101) for pretreating a surface of a substrate; organic layer coating means (102) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means (103) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means (104) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means (105) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means (106) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.
摘要:
In a buffer management system for communication apparatus, the statistical information to be collected at each station such as the number of occurences of receiver buffer busy state is counted at regular time intervals for a preset time duration, and if it becomes in excess of a predetermined number, the ratio in size of transmitter buffer area to receiver buffer area is changed in accordance with the buffer busy state number such that the size of the receiver buffer area becomes larger.
摘要:
This invention relates to a loop transmission system which has a plurality of stations connected to a loop transmission path to transmit data among the stations. In the transmission frame to be sent out from the sending station, specific information is included for identifying each frame and this information is held in the sending station. When the transmission frame returns to the sending station after being transmitted through the loop transmission path, the specific information in the frame is received and compared with the information held in the station and, if they coincide, it is decided that the transmission frame has been correctly received by the intended receiving station.
摘要:
An apparatus (100) for fabricating a semiconductor thin film includes: substrate surface pretreatment means (101) for pretreating a surface of a substrate; organic layer coating means (102) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means (103) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means (104) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means (105) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means (106) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.