公开(公告)号：US20100258436A1

公开(公告)日：2010-10-14

申请号：US12739024

申请日：2008-10-27

申请人： Yoshinori Takeuchi ,  Dalsuke Sakaki ,  Tadashi Ohashi ,  Hisashi Matsumura

发明人： Yoshinori Takeuchi ,  Dalsuke Sakaki ,  Tadashi Ohashi ,  Hisashi Matsumura

IPC分类号： C25B9/00

CPC分类号： C25C7/005 ,  C25C3/34 ,  C25C7/06

摘要： An electrolysis apparatus is disclosed as including an electrolysis cell (10) accommodating therein electrolyte (70), a heating section (20) located around the electrolysis cell to heat the electrolysis cell, an electrode section (30) having an electrode unit (30a) immersed in the electrolyte and a power-conducting electrode portion (30b) supporting the electrode unit to apply the electrode unit with electric power, a lid body (45) defining a space region (40) in an area above the electrolysis cell, an exhaust section (50) located in the lid body to allow the space region to communicate with an outside for exhausting by-product gas, resulting from electrolysis of the electrolyte, from the space region to the outside, and an evaporation restraining member (60, 80, 80A, 80B, 90, 90A, 90B) floating on a liquid surface of the electrolyte so as to cover the liquid surface of the electrolyte for permitting by-product gas, resulting from electrolysis of the electrolyte, to escape to the space region while restraining the electrolyte from evaporating.

摘要翻译： 公开了一种电解装置，其包括容纳电解质（70）的电解槽（10），位于电解槽周围的加热部（20），加热电解槽，具有电极单元（30a）的电极部（30） 浸渍在电解质中，以及支撑电极单元的电力传导电极部分（30b），用电力施加电极单元，在电解池单元上方限定空间区域（40）的盖体（45），排气 位于所述盖体中的部分（50），以允许所述空间区域与外部连通，用于从所述空间区域向外部排出由电解质电解产生的副产物气体和蒸发抑制构件（60,80 ，80A，80B，90,90A，90B）漂浮在电解液的液体表面上，以便覆盖电解液的液体表面，以允许由电解质电解产生的副产物气体逸出到空间 同时抑制电解质的蒸发。

公开(公告)号：US20100247416A1

公开(公告)日：2010-09-30

申请号：US12739022

申请日：2008-10-20

申请人： Yoshinori Takeuchi ,  Daisuke Sakaki ,  Tadashi Ohashi ,  Hisashi Matsumura

发明人： Yoshinori Takeuchi ,  Daisuke Sakaki ,  Tadashi Ohashi ,  Hisashi Matsumura

IPC分类号： C01B33/023 ,  F28D21/00

CPC分类号： C01B33/033 ,  B01J4/002 ,  B01J12/005 ,  B01J19/24 ,  B01J2219/00132 ,  B01J2219/185

摘要： A silicon manufacturing apparatus is disclosed as having a reactor tube (10) in which reaction occurs between zinc and silicon compound, zinc supply pipes (30, 30′) having heating portions to heat zinc for generating zinc gas and zinc ejecting portions ejecting and supplying zinc gas to the reactor tube, a zinc feeding section (40A, 40B) feeding zinc into the zinc supply pipes, a silicon compound supply pipe (50, 50A, 50B, 50C, 50c, 54, 57, 90) having a silicon compound ejecting portion to eject and supply silicon compound gas to the reactor tube so as to allow silicon compound gas to flow from a lower side to an upper side in the reactor tube, and a heating furnace (20) disposed outside the reactor tube to define a heating region (a) accommodating therein a part of the reactor tube, the heating portion and the zinc ejecting section for heating the same so as to allow the reactor tube, through which zinc gas and silicon compound gas flow, to have the temperature distribution such that a temperature closer to a central axis (C) of the reactor tube is lower than that closer to a side circumferential wall of the reactor tube.

摘要翻译： 公开了一种硅制造装置，其具有在锌和硅化合物之间发生反应的反应器管（10），具有加热部分以加热锌以产生锌气体的锌供应管（30,30'）以及喷射和供应锌锌部分 将锌气体输送到反应器管中，向锌供给管供给锌的锌供给部（40A，40B），具有硅化合物的硅化合物供给管（50,50A，50B，50C，50c，54,57,90） 喷射部分，以将硅化合物气体喷射并供应到反应器管中，以使硅化合物气体从反应器管中的下侧流向上侧;以及加热炉（20），其设置在反应器管的外侧， 加热区域（a），其中容纳反应器管的一部分，加热部分和锌喷射部分，用于加热它们，以使得锌气体和硅化合物气体流过的反应器管具有如下温度分布 那个 靠近反应器管的中心轴线（C）的温度低于靠近反应器管侧壁的温度。

公开(公告)号：US20050160991A1

公开(公告)日：2005-07-28

申请号：US11017711

申请日：2004-12-22

申请人： Toshikazu Miyamoto ,  Tadashi Ohashi

发明人： Toshikazu Miyamoto ,  Tadashi Ohashi

IPC分类号： C23C16/458 ,  C23C16/00 ,  H01L21/205

CPC分类号： C30B35/00 ,  C23C16/4581 ,  C23C16/4588 ,  C30B23/02 ,  C30B25/02

摘要： The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wafer mounting concave portion 6a, 6b, 6c on which a wafer is laid, and the inclination angle θa, θb, θc of a bottom face 6a1, 6b1, 6c1 of the concave portion for each partition to the vertical line is gradually decreased in each partition from the upper part to the lower part.

摘要翻译： 用于半导体外延生长的桶型感受体的特征在于，具有截头圆锥形状的基座主体2的面板5在其纵向被分隔成两个或更多个，每个隔板设置有 在其上放置晶片的晶片安装凹部6a，6b，6c以及底面6a，6b1，...的倾斜角度θa，tab， 每个分隔物的垂直线的凹部的直径的比例从上部到下部逐渐减小。

公开(公告)号：US06250914B1

公开(公告)日：2001-06-26

申请号：US09556943

申请日：2000-04-21

申请人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

发明人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

IPC分类号： F27D706

CPC分类号： H01L21/67248 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/16 ,  H01L21/67109

摘要： The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal. When no wafer is set on the susceptor, the power of the second heater is controlled by using a value measured by the third radiation thermometer as a feedback signal.

摘要翻译： 本发明提供了一种晶片加热装置，其可以以相对简单的结构提高晶片表面积内的温度分布的均匀性。 晶片支撑在环形基座上。 圆盘形状的第一加热器设置在晶片的下方，并且围绕第一加热器设置环形的第二加热器。 辐射温度计布置在反应室的顶部。 第一辐射温度计测量晶片的中心区域的温度，第二辐射温度计测量晶片的周边区域的温度，并且第三辐射温度计测量基座的温度。 第一个加热器和第二个加热器由独立的闭环控制。 当晶片设置在基座上时，通过使用由第二辐射温度计测量的值作为反馈信号来控制第二加热器的功率。 当基座上没有设置晶片时，通过使用由第三辐射温度计测量的值作为反馈信号来控制第二加热器的功率。

公开(公告)号：US6132519A

公开(公告)日：2000-10-17

申请号：US991409

申请日：1997-12-16

申请人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda

发明人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

摘要： A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

摘要翻译： 一种气相沉积装置，用于将原料气体供应到反应器中，通过气相沉积在设置在反应器中的晶片基板上形成薄膜，该装置至少包括用于将晶片基板安装在其上的转子，处理气体导入口，矫正 叶片具有多个孔，以及晶片基板进入/关闭端口，其中晶片进入/关闭端口的最下部分位于距旋转器的上表面预定的高度处， 晶片进/出端口的最下部分和转子的上表面被设定为大于转子上部的过渡层的厚度。 在气相沉积方法中，通过使用蒸镀装置，将晶片基板安装在旋转体上，从而在晶片基板上形成缺陷少，膜厚均匀的薄膜。

公开(公告)号：US5949890A

公开(公告)日：1999-09-07

申请号：US758260

申请日：1996-11-27

申请人： Tadashi Ohashi

发明人： Tadashi Ohashi

IPC分类号： F01N1/00 ,  G05B13/02 ,  G06F15/18 ,  G06N3/00 ,  G06N3/04 ,  G10K11/178 ,  H03B29/00

CPC分类号： G10K11/1786 ,  G01N2291/02491 ,  G10K2210/121 ,  G10K2210/3038

摘要： Noise data from a noise source is provided for a neural network. An output signal from the neural network is provided for a node of a hidden layer H of the neural network. The weight of the neural network is updated by an update unit according to an error signal e.sub.j0 detected by a microphone, thereby outputting a deadening sound from a speaker.

摘要翻译： 为神经网络提供来自噪声源的噪声数据。 神经网络的输出信号被提供给神经网络的隐藏层H的节点。 根据由麦克风检测出的误差信号ej0，更新单元更新神经网络的权重，由此从扬声器输出消音声。

公开(公告)号：US07296012B2

公开(公告)日：2007-11-13

申请号：US10633551

申请日：2003-08-05

申请人： Tadashi Ohashi

发明人： Tadashi Ohashi

IPC分类号： G06F7/00

CPC分类号： G06F17/30017 ,  Y10S707/99933

摘要： A name obtaining unit obtains name information. An ontology generating unit sets a specific element from an installation space where each element to be given a name is hierarchically expressed, generates an ontology as a group of name candidates with the set element as a top level based on the name information, and links each name constituting the ontology with multimedia information. The ontology generating unit registers the linked multimedia information at a multimedia information database.

摘要翻译： 名称获取单元获取名称信息。 一个本体生成单元从一个安装空间设置一个特定的元素，其中每一个被赋予一个名字的元素被分层地表现出来，根据该名称信息，将该集合的元素作为一个顶级的一组名称候选生成一个本体， 用多媒体信息构成本体的名称。 本体生成单元将链接的多媒体信息登记在多媒体信息数据库中。

公开(公告)号：US07152208B2

公开(公告)日：2006-12-19

申请号：US09222833

申请日：1998-12-30

申请人： Tadashi Ohashi

发明人： Tadashi Ohashi

IPC分类号： G06F15/00

CPC分类号： G06Q10/10 ,  G06F17/30011 ,  G06F17/30371

摘要： A document management apparatus having a constitution for periodically checking whether the attribute information in a document managed by a user conflicts with master information of the attribute information managed by a Personnel server or Enterprise-Department servers or not, and changing the attribute information in the document to the attribute information in the servers when both of the information conflict with each other.

摘要翻译： 具有用于周期性地检查由用户管理的文档中的属性信息是否与由人事服务器或企业部服务器管理的属性信息的主信息冲突的文档管理装置，以及更改文档中的属性信息 当两个信息彼此冲突时，服务器中的属性信息。

公开(公告)号：US06993565B1

公开(公告)日：2006-01-31

申请号：US09697183

申请日：2000-10-27

申请人： Tadashi Ohashi

发明人： Tadashi Ohashi

IPC分类号： G06F15/16 ,  G06F15/167 ,  G06F15/177

CPC分类号： G06F8/61

摘要： Service processor control has enhanced versatility by delivering and maintaining component information with less labor and lower cost. A system includes a client storing component information on all hardware and firmware constituting a product (with the client connected to a drawing server), an EC sheet server, a program server, a manual server, and a service processor connected to the Internet. The service processor has a console function for at least the service processor, extracting component information through an SVP browser, and allowing the service processor to conduct a maintenance service, and further includes a console service and the like relating to a host.

摘要翻译： 服务处理器控制通过以更少的劳动力和更低的成本递送和维护组件信息来增强多功能性。 系统包括客户端存储构成产品的所有硬件和固件（连接到绘图服务器的客户端）的组件信息，EC表服务器，程序服务器，手动服务器和连接到因特网的服务处理器。 服务处理器具有用于至少服务处理器的控制台功能，通过SVP浏览器提取组件信息，并允许服务处理器进行维护服务，并且还包括与主机相关的控制台服务等。

公开(公告)号：US5904769A

公开(公告)日：1999-05-18

申请号：US775353

申请日：1997-01-03

申请人： Tadashi Ohashi ,  Shinichi Mitani ,  Takaaki Honda

发明人： Tadashi Ohashi ,  Shinichi Mitani ,  Takaaki Honda

IPC分类号： C30B29/06 ,  C23C16/24 ,  C30B25/02 ,  H01L21/205 ,  C30B25/14

CPC分类号： C30B29/06 ,  C30B25/02

摘要： This invention provides an epitaxial growth method capable of decreasing variations of the resistance of an epitaxial layer resulting from an in-plane temperature distribution of a silicon wafer and also capable of reducing particles and haze. This epitaxial growth method is an epitaxial growth method of growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of a silicon wafer with an in-plane temperature distribution of 2 to 50.degree. C., and includes the steps of arranging the silicon wafer in a reaction vessel, supplying into the reaction vessel a source gas containing (a) silane, (b) 5 to 600 vol % of hydrogen chloride added to the silane, and (c) a dopant consisting of a boron compound or a phosphorus compound, and growing a boron- or phosphorus-doped silicon epitaxial layer on the surface of the wafer by setting a vacuum degree of 10 to 200 torr in the reaction vessel and heating the wafer to 900 to 1100.degree. C.

摘要翻译： 本发明提供一种外延生长方法，其能够降低由硅晶片的面内温度分布产生的外延层的电阻的变化，并且还能够减少颗粒和雾度。 这种外延生长方法是在硅晶片的表面上生长含硼或磷掺杂的硅外延层的外延生长方法，其中平面内温度分布为2至50℃，并且包括以下步骤： 硅晶片，向反应容器供应含有（a）硅烷，（b）5至600体积％的加入到硅烷中的氯化氢的源气体，以及（c）由硼化合物或 磷化合物，并通过在反应容器中设置10至200托的真空度并将晶片加热至900至1100℃，在晶片表面上生长硼或磷掺杂的硅外延层。