公开(公告)号：US6113705A

公开(公告)日：2000-09-05

申请号：US137298

申请日：1998-08-20

申请人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda ,  Yuusuke Sato

发明人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda ,  Yuusuke Sato

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/4584

摘要： There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.

摘要翻译： 提供了一种用于形成薄膜的气相沉积装置，该薄膜在中空反应器的顶部包括多个反应气体供给口，反应器底部的排气口，设置在反应器内部的旋转基板保持器， 衬底安装。 在反应器的上部设置有形成有多个气孔的矫直叶片。 反应器被分隔成具有不同内径的上部和下部，上部的内径小于下部的内径。 上部的下端和下部的上端通过具有预定形状的连接部连接以使反应器的中空内部连续。 通过将反应气体供应到反应器中，在放置在旋转基板保持器上的晶片基板的表面上形成薄膜。

公开(公告)号：US6059885A

公开(公告)日：2000-05-09

申请号：US991407

申请日：1997-12-16

申请人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda

发明人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C30B25/14 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45576 ,  C23C16/4584 ,  C30B25/14

摘要： A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion. A link portion connects the lower end of the upper portion and the upper end of the lower portion. The link portion is provided with straightening gas flow-out holes. The rotational substrate holder is positioned below the lower end of the upper portion of the reactor by a predetermined height difference.

摘要翻译： 蒸镀装置包括：圆筒状中空反应器，其上部具有气体供给口，底部具有排气口。 旋转衬底保持器，其位于晶片衬底上，同心地放置在反应器内。 反应器具有矫直叶片，其具有同心地位于其上部的气孔。 将反应气体供给到反应器中，通过气相沉积在旋转基板保持器上的晶片基板的表面上形成薄膜。 在一个实施例中，矫直叶片被构造成使得覆盖晶片基板的区域的中心部分中的反应气体的流量和中心部分的外部中的反应气体的气体流量各自不同 其他。 在另一个实施方案中，反应器被分成上部和下部。 上部的内径小于下部的内径。 连接部分连接上部的下端和下部的上端。 连杆部设有矫直气体流出孔。 旋转衬底保持器定位在反应器的上部的下端下方预定的高度差。

公开(公告)号：US6132519A

公开(公告)日：2000-10-17

申请号：US991409

申请日：1997-12-16

申请人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda

发明人： Tadashi Ohashi ,  Katuhiro Chaki ,  Ping Xin ,  Tatsuo Fujii ,  Katsuyuki Iwata ,  Shinichi Mitani ,  Takaaki Honda

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/45508 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

摘要： A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

摘要翻译： 一种气相沉积装置，用于将原料气体供应到反应器中，通过气相沉积在设置在反应器中的晶片基板上形成薄膜，该装置至少包括用于将晶片基板安装在其上的转子，处理气体导入口，矫正 叶片具有多个孔，以及晶片基板进入/关闭端口，其中晶片进入/关闭端口的最下部分位于距旋转器的上表面预定的高度处， 晶片进/出端口的最下部分和转子的上表面被设定为大于转子上部的过渡层的厚度。 在气相沉积方法中，通过使用蒸镀装置，将晶片基板安装在旋转体上，从而在晶片基板上形成缺陷少，膜厚均匀的薄膜。

公开(公告)号：US06461428B2

公开(公告)日：2002-10-08

申请号：US09729669

申请日：2000-12-05

申请人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

发明人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

IPC分类号： C30B2514

CPC分类号： C23C16/45587 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/12 ,  C30B25/16 ,  C30B31/14 ,  C30B31/18

摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.

摘要翻译： 控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散， 或化学气相沉积工艺。 在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。 还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。 基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

公开(公告)号：US06485573B2

公开(公告)日：2002-11-26

申请号：US09855654

申请日：2001-05-16

申请人： Katsuyuki Iwata ,  Tadashi Ohashi ,  Shyuji Tobashi ,  Shinichi Mitani ,  Hideki Arai ,  Hideki Ito

发明人： Katsuyuki Iwata ,  Tadashi Ohashi ,  Shyuji Tobashi ,  Shinichi Mitani ,  Hideki Arai ,  Hideki Ito

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/12 ,  C30B25/14

摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.

摘要翻译： 一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法 上述装置。 该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41， 用于检测旋转机械部分中的压力的​​压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。

公开(公告)号：US06250914B1

公开(公告)日：2001-06-26

申请号：US09556943

申请日：2000-04-21

申请人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

发明人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

IPC分类号： F27D706

CPC分类号： H01L21/67248 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/16 ,  H01L21/67109

摘要： The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal. When no wafer is set on the susceptor, the power of the second heater is controlled by using a value measured by the third radiation thermometer as a feedback signal.

摘要翻译： 本发明提供了一种晶片加热装置，其可以以相对简单的结构提高晶片表面积内的温度分布的均匀性。 晶片支撑在环形基座上。 圆盘形状的第一加热器设置在晶片的下方，并且围绕第一加热器设置环形的第二加热器。 辐射温度计布置在反应室的顶部。 第一辐射温度计测量晶片的中心区域的温度，第二辐射温度计测量晶片的周边区域的温度，并且第三辐射温度计测量基座的温度。 第一个加热器和第二个加热器由独立的闭环控制。 当晶片设置在基座上时，通过使用由第二辐射温度计测量的值作为反馈信号来控制第二加热器的功率。 当基座上没有设置晶片时，通过使用由第三辐射温度计测量的值作为反馈信号来控制第二加热器的功率。

公开(公告)号：US06025596A

公开(公告)日：2000-02-15

申请号：US19049

申请日：1998-02-05

申请人： Hiroshi Shirai ,  Kenji Akai ,  Toshio Abe ,  Chikara Tojima ,  Katsuyuki Iwata

发明人： Hiroshi Shirai ,  Kenji Akai ,  Toshio Abe ,  Chikara Tojima ,  Katsuyuki Iwata

IPC分类号： G01B11/06 ,  H01L21/66 ,  H01L29/739 ,  H01L29/78 ,  G01J5/02

CPC分类号： G01B11/0625

摘要： In a measurement method for measuring the epitaxial film thickness of a multilayer epitaxial wafer, a reflectivity spectrum of a multilayer epitaxial wafer having at least two epitaxial layers of different electric characteristics is measured by using infrared radiation in a far infrared region of at least 500 cm.sup.-1 or less, and frequency-analysis is performed on the reflection spectrum thus obtained by a maximum entropy method, and the film thickness of each epitaxial layer is calculated on the basis of the analysis spectrum thus obtained.

摘要翻译： 在用于测量多层外延晶片的外延膜厚度的测量方法中，通过在至少500cm的远红外区域中使用红外辐射来测量具有不同电特性的至少两个外延层的多层外延晶片的反射率光谱 -1以下，对通过最大熵法得到的反射光谱进行频率分析，根据得到的分析光谱计算各外延层的膜厚。

公开(公告)号：US20070003796A1

公开(公告)日：2007-01-04

申请号：US11445270

申请日：2006-06-02

申请人： Hideki Isono ,  Katsuyuki Iwata

发明人： Hideki Isono ,  Katsuyuki Iwata

IPC分类号： C03C15/00 ,  B05D5/12 ,  G11B5/66

CPC分类号： C03C21/002 ,  C03C19/00 ,  G11B5/7315 ,  G11B5/8404

摘要： A method for manufacturing a magnetic disk glass substrate including a chemical strengthening step is provided. In the method, chemical strengthening treatment is sufficiently performed over the entire main surfaces of a glass substrate. Consequently, the resulting magnetic disk glass substrate can provide a magnetic disk allowing the magnetic head to have a low flying height and achieving high-density information recording, and particularly a magnetic desk suitably used in small hard disk drives for portable information apparatuses. In the chemical strengthening step, a chemical strengthening agent is brought into contact with a glass substrate to perform ion exchange by allowing the chemical strengthening agent to flow with respect to the glass substrate, or by moving the glass substrate with respect to the chemical strengthening agent.

摘要翻译： 提供一种制造包括化学强化步骤的磁盘玻璃基板的方法。 在该方法中，在玻璃基板的整个主表面上充分进行化学强化处理。 因此，所得到的磁盘玻璃基板可以提供一种允许磁头具有低飞行高度并实现高密度信息记录的磁盘，特别是适合用于便携式信息设备的小型硬盘驱动器中的磁性台。 在化学强化工序中，使化学强化剂与玻璃基板接触，通过使化学强化剂相对于玻璃基板流动，或者相对于化学强化剂移动玻璃基板，进行离子交换 。

公开(公告)号：US08119267B2

公开(公告)日：2012-02-21

申请号：US12665623

申请日：2008-09-26

申请人： Kinobu Osakabe ,  Hideki Isono ,  Katsuyuki Iwata ,  Shinji Eda ,  Kenichiro Terada

发明人： Kinobu Osakabe ,  Hideki Isono ,  Katsuyuki Iwata ,  Shinji Eda ,  Kenichiro Terada

IPC分类号： C03C3/078 ,  G11B5/706 ,  B23Q3/00

CPC分类号： G11B5/7315 ,  C03C21/002 ,  G11B5/8404

摘要： A glass substrate for a magnetic disk of the invention is a disk-shaped glass substrate for a magnetic disk where the substrate has a main surface and end face and is subjected to chemical reinforcement treatment, and is characterized in that the penetration length in the uppermost-portion stress layer on the main surface is 49.1 μm or less, and that assuming that an angle between the main surface and compressive stress in the stress profile by a Babinet compensator method is θ, a value y of {12·t·ln(tan θ)+(49.1/t)} is the penetration length in the uppermost-portion stress layer or less.

摘要翻译： 本发明的磁盘用玻璃基板是用于磁盘的盘状玻璃基板，其中基板具有主表面和端面并进行化学强化处理，其特征在于，最上面的穿透长度 主表面的应力层为49.1μm以下，假设通过Babinet补偿方法在应力分布中的主表面与压缩应力之间的角度为θ，则{12·t·ln （tan＆amp; t s）+（49.1 / t）}是最上部应力层的贯通长度以下。

公开(公告)号：US08652660B2

公开(公告)日：2014-02-18

申请号：US13331667

申请日：2011-12-20

申请人： Hideki Isono ,  Kinobu Osakabe ,  Katsuyuki Iwata ,  Mikio Ikenishi ,  Naomi Matsumoto

发明人： Hideki Isono ,  Kinobu Osakabe ,  Katsuyuki Iwata ,  Mikio Ikenishi ,  Naomi Matsumoto

IPC分类号： C03C3/00 ,  G11B5/02 ,  G11B5/65

CPC分类号： G11B5/7315

摘要： An aspect of the present invention relates to a glass substrate for a magnetic recording medium, which is comprised of glass with a glass transition temperature of equal to or greater than 600° C., an average coefficient of linear expansion at 100 to 300° C. of equal to or greater than 70×10−7/° C., a Young's modulus of equal to or greater than 81 GPa, a specific modulus of elasticity of equal to or greater than 30 MNm/kg, and a fracture toughness value of equal to or greater than 0.9 MPa·m1/2.

摘要翻译： 本发明的一个方面涉及一种用于磁记录介质的玻璃基板，其由玻璃化转变温度等于或大于600℃的玻璃组成，在100至300℃的平均线性膨胀系数 ，等于或大于70×10-7 /℃，杨氏模量等于或大于81GPa，比模弹性等于或大于30MNm / kg，断裂韧性值 等于或大于0.9MPa·m1 / 2。