METHOD FOR MANUFACTURING CERAMIC COVERING MEMBER FOR SEMICONDUCTOR PROCESSING APPARATUS
    3.
    发明申请
    METHOD FOR MANUFACTURING CERAMIC COVERING MEMBER FOR SEMICONDUCTOR PROCESSING APPARATUS 审中-公开
    用于制造半导体加工装置的陶瓷覆盖件的方法

    公开(公告)号:US20090208667A1

    公开(公告)日:2009-08-20

    申请号:US12293974

    申请日:2007-03-16

    IPC分类号: B05D3/06

    摘要: Producing a ceramic coating member for a semiconductor processing apparatus with a purpose of improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment and as a means for solution, forming a porous layer by irradiating an oxide of an element in Group IIIa of the Periodic Table to be coated directly or through an undercoat on the surface of the substrate of a metal or non-metal and further forming a secondary recrystallized layer of the oxide on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.

    摘要翻译: 制造用于半导体处理装置的陶瓷涂层构件,其目的是提高容器内部的构件和部件的阻力,例如用于在强腐蚀性环境中进行等离子体蚀刻处理的半导体处理装置和作为溶液的手段,形成多孔 通过在金属或非金属的基板的表面上直接或通过底涂层照射周期表的IIIa族元素的氧化物,并进一步在多孔层上形成氧化物的二次再结晶层 通过电子束和激光束等高能量的照射处理。

    CERAMIC COATING MEMBER FOR SEMICONDUCTOR PROCESSING APPARATUS
    4.
    发明申请
    CERAMIC COATING MEMBER FOR SEMICONDUCTOR PROCESSING APPARATUS 有权
    用于半导体加工设备的陶瓷涂层组件

    公开(公告)号:US20070218302A1

    公开(公告)日:2007-09-20

    申请号:US11688565

    申请日:2007-03-20

    IPC分类号: B32B15/04

    摘要: Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment.A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIa of the Periodic Table coated directly or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.

    摘要翻译: 改善设置在容器内部的部件和部件的电阻,例如用于在强腐蚀性环境中进行等离子体蚀刻处理的半导体处理装置。 用于半导体处理装置的陶瓷涂层构件包括由直接涂覆的元素周期表Ⅲa族元素的氧化物或金属或非金属基材表面上的底涂层和二次再结晶的多孔层 通过高能量的照射处理如电子束和激光束在多孔层上形成的氧化物层。