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    Process and apparatus for manufacturing a semiconductor device
    1.
    发明授权
    Process and apparatus for manufacturing a semiconductor device 失效
    用于制造半导体器件的工艺和设备

    公开(公告)号：US06815357B2

    公开(公告)日：2004-11-09

    申请号：US10299838

    申请日：2002-11-20

    申请人： Yoshio Homma ,  Noriyuki Sakuma ,  Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

    发明人： Yoshio Homma ,  Noriyuki Sakuma ,  Hiroshi Nakano ,  Takeyuki Itabashi ,  Haruo Akahoshi

    IPC分类号： H01L21311

    CPC分类号： C25D7/12 ,  C25D5/02 ,  C25D5/22 ,  C25D17/001 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76883

    摘要： A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abrading step comprises contacting the substrate against an abrasive surface and causing relative linear and/or rotary motion between the abrasive surface and the substrate while the substrate is in contact with the abrasive surface. Growth of the metal barrier layer on a portion of the wiring substrate other than the interconnect layer is suppressed and the metal barrier layer thus formed is thinner, exhibits improved uniformity and superior prevention against Cu diffusion.

    摘要翻译： 一种用于在布线基板的互连件的表面上选择性地形成金属阻挡层的方法，包括以下步骤：研磨基板，同时将具有溶解在其中的金属的电镀溶液同时进料到基板上。 研磨步骤包括使基底抵靠研磨表面，并且在基底与研磨表面接触的同时使研磨表面和基底之间发生相对的线性和/或旋转运动。 抑制布线基板以外的配线层的部分上的金属阻挡层的生长，由此形成的金属阻挡层更薄，显示出均匀性提高，防止Cu扩散的优异性。

    Polishing method
    2.
    发明授权
    Polishing method 有权
    抛光方法

    公开(公告)号：US07563716B2

    公开(公告)日：2009-07-21

    申请号：US11693383

    申请日：2007-03-29

    申请人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    发明人： Seiichi Kondo ,  Yoshio Homma ,  Noriyuki Sakuma ,  Kenichi Takeda ,  Kenji Hinode

    IPC分类号： H01L21/302

    CPC分类号： C23F3/06 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

    摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

    摘要翻译： 抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁工艺和浆料供应/加工设备，并且消耗品如浆料和抛光垫的成本降低。 在包含凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物溶于水但不含抛光磨料的物质的抛光溶液抛光。

    Polishing apparatus using substantially abrasive-free liquid with mixture unit near polishing unit, and plant using the polishing apparatus
    5.
    发明授权
    Polishing apparatus using substantially abrasive-free liquid with mixture unit near polishing unit, and plant using the polishing apparatus 失效
    抛光装置使用抛光单元附近的混合单元使用基本上无磨料的液体，以及使用抛光装置的设备

    公开(公告)号：US06565422B1

    公开(公告)日：2003-05-20

    申请号：US09507787

    申请日：2000-02-22

    申请人： Yoshio Homma ,  Hiroki Nezu ,  Takeshi Kimura ,  Seiichi Kondo ,  Noriyuki Sakuma

    发明人： Yoshio Homma ,  Hiroki Nezu ,  Takeshi Kimura ,  Seiichi Kondo ,  Noriyuki Sakuma

    IPC分类号： B24B100

    CPC分类号： B24B37/04 ,  B24B57/02

    摘要： In order to resolve problems of an increase in cost of transportation and vessels for polishing solutions to polish metal films, and of aging change of the polishing solutions, apparatus for preparing and mixing solutions of polishing materials without including abrasive are installed at a site the same as a site of polishing apparatus, an abrasive free slurry is supplied to the polishing apparatus and a metal film on a wiring substrate is polished to thereby form embedded metal wirings by which the cost of polishing metal can significantly be reduced and stability of the polishing solution is promoted.

    摘要翻译： 为了解决运输成本增加和抛光溶液抛光金属膜的容器以及抛光液的老化变化的问题，在不含磨料的情况下安装抛光材料的溶液的制备和混合装置安装在相同的位置 作为抛光装置的位置，向抛光装置供给无磨料的浆料，对配线基板上的金属膜进行研磨，形成嵌入金属配线，通过该金属配线可以显着降低抛光金属的成本，并且研磨液的稳定性 被提拔。

    Method of polishing
    6.
    发明授权
    Method of polishing 失效
    抛光方法

    公开(公告)号：US06561883B1

    公开(公告)日：2003-05-13

    申请号：US09548289

    申请日：2000-04-12

    申请人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

    发明人： Seiichi Kondo ,  Noriyuki Sakuma ,  Yoshio Homma

    IPC分类号： B24B100

    CPC分类号： H01L21/3212 ,  C09G1/04 ,  H01L21/02074

    摘要： A polishing method comprising mechanically polishing the surface of a metal film by the use of a polishing solution comprising an oxidizer, a substance which renders an oxide water-soluble, a thickener and water, is suitable for polishing the metal film at a high removal rate with suppressed scratching, delamination, dishing and erosion, and can be applied to production of semiconductors, etc.

    摘要翻译： 抛光方法包括通过使用包含氧化剂，使氧化物水溶性的物质，增稠剂和水的抛光溶液机械抛光金属膜的表面，适于以高的去除速率抛光金属膜 具有抑制划痕，分层，凹陷和侵蚀，可应用于半导体等的生产。

    Method for manufacturing a semiconductor device
    10.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US06326299B1

    公开(公告)日：2001-12-04

    申请号：US09361989

    申请日：1999-07-28

    申请人： Yoshio Homma ,  Seiichi Kondo ,  Noriyuki Sakuma ,  Naofumi Ohashi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada

    发明人： Yoshio Homma ,  Seiichi Kondo ,  Noriyuki Sakuma ,  Naofumi Ohashi ,  Toshinori Imai ,  Hizuru Yamaguchi ,  Nobuo Owada

    IPC分类号： H01L214763

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/7684

    摘要： In order to suppress an increase of depressions, etc. to occur on a copper based alloy layer during polishing when a copper based alloy inlaid wiring is formed with the damascene method in grooves formed in an insulating film, the polishing rate for the lower metallic layer is set not less than five times faster than the etching rate for the same and the polishing rate for the insulating film is set lower than the polishing rate for the lower metallic layer when the upper metallic layer 13 to become a wiring and the lower metallic layer 12 to become a barrier are polished respectively. Thus, the object damascene wiring can be formed with less erosion on each of insulating layers and dishing on each of metallic layers respectively.

    摘要翻译： 为了抑制在绝缘膜中形成的槽中以镶嵌法形成铜基合金镶嵌布线时在抛光期间在铜基合金层上发生的凹陷等的增加，下金属层的研磨速度 设定为比其蚀刻速度快五倍以上，并且当上金属层13成为布线时，绝缘膜的抛光速率被设定为低于下金属层的抛光速率，下金属层 12成为屏障分别抛光。 因此，对象镶嵌布线可以分别形成在绝缘层和每个金属层上的凹陷上较少的侵蚀。