公开(公告)号：US4665690A

公开(公告)日：1987-05-19

申请号：US817618

申请日：1986-01-10

申请人： Yoshitaka Nomoto ,  Hirofumi Yamauchi ,  Shigeru Sakurai ,  Kenji Ohkubo ,  Hideaki Kurita ,  Kunihiro Yagi

发明人： Yoshitaka Nomoto ,  Hirofumi Yamauchi ,  Shigeru Sakurai ,  Kenji Ohkubo ,  Hideaki Kurita ,  Kunihiro Yagi

IPC分类号： F01N3/01 ,  F01N3/025 ,  F01N3/029 ,  F01N3/032 ,  F01N9/00 ,  F01N11/00 ,  F01N3/02

CPC分类号： F01N3/0293 ,  F01N11/00 ,  F01N3/0253 ,  F01N3/029 ,  F01N3/032 ,  F01N9/002 ,  F01N2390/02 ,  F01N2390/04 ,  F01N2550/00 ,  F01N3/01 ,  Y02T10/47 ,  Y10S55/10 ,  Y10S55/30

摘要： An internal combustion engine is provided in its exhaust system with a particulate filter for trapping combustible particulates contained in exhaust gas. A combustion promoting material injection device is provided for injecting a material for promoting combustion of the combustible particulates into the exhaust system upstream of the particulate filter. Further there are provided a bypass exhaust passage which bypasses the combustion promoting material injection device and the particulate filter, and a flow control valve which controls the amount of exhaust gas flowing through the bypass exhaust passage to control the amount of exhaust gas flowing into the particulate filter when said combustion promoting material is to be injected from the injecting device. When the combustion promoting material is injected, the flow control valve controls the amount of exhaust gas flowing into the particulate filter so that the combustion promoting material can uniformly adhere to the surface of the combustible particulates over the entire area thereof and so that the combustion temperature of the combustible particulates is prevented from rising abnormally high.

摘要翻译： 在其排气系统中设置有用于捕集废气中所含的可燃微粒的微粒过滤器的内燃机。 提供了一种燃烧促进材料注入装置，用于将可燃颗粒燃烧的材料注入到颗粒过滤器上游的排气系统中。 此外，还设置有绕过燃烧促进材料注入装置和微粒过滤器的旁通排气通道，以及流量控制阀，其控制流过旁路排气通道的废气量以控制流入颗粒物的废气量 当所述燃烧促进材料从注入装置注入时，过滤器。 当燃烧促进材料被注入时，流量控制阀控制流入微粒过滤器的废气量，使得促进燃烧材料能够在其整个区域上均匀地附着在可燃颗粒的表面上，从而燃烧温度 的可燃微粒被防止异常升高。

公开(公告)号：US4672578A

公开(公告)日：1987-06-09

申请号：US582540

申请日：1984-02-22

申请人： Chusuke Munakata ,  Kunihiro Yagi ,  Masaru Miyazaki ,  Shiyouzou Yoneda

发明人： Chusuke Munakata ,  Kunihiro Yagi ,  Masaru Miyazaki ,  Shiyouzou Yoneda

IPC分类号： G11C17/00 ,  G03C1/705 ,  G11B7/241 ,  G11B9/08 ,  G11B11/00 ,  G11C11/23 ,  G11C11/30 ,  G11C11/42 ,  G11C13/04 ,  H01L31/08 ,  H04N1/21 ,  G11C11/34

CPC分类号： H01L31/08 ,  G03C1/705 ,  G11B11/00 ,  G11B7/241 ,  G11B9/08 ,  G11C11/23 ,  G11C13/04 ,  H04N1/2108 ,  G11B2007/2571 ,  G11B2007/25715

摘要： An information recording method is provided, in which a p- or n-type semiconductor wafer is irradiated with an energetic particle beam such as an electron beam thereby to control, e.g., decreased or increased generation of the surface photovoltage at the irradiated area so that information may be recorded on the wafer.

摘要翻译： 提供了一种信息记录方法，其中p型或n型半导体晶片被诸如电子束的能量粒子束照射，从而控制例如在照射区域处的表面光电压的产生减少或增加，使得 信息可以记录在晶片上。

公开(公告)号：US4907046A

公开(公告)日：1990-03-06

申请号：US168490

申请日：1988-03-15

申请人： Yuzuru Ohji ,  Osamu Kasahara ,  Yoshitaka Tadaki ,  Hiroko Kaneko ,  Toshiyuki Mine ,  Kunihiro Yagi

发明人： Yuzuru Ohji ,  Osamu Kasahara ,  Yoshitaka Tadaki ,  Hiroko Kaneko ,  Toshiyuki Mine ,  Kunihiro Yagi

IPC分类号： H01L27/04 ,  F02B3/06 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/51 ,  H01L29/92 ,  H01L29/78 ,  H01L27/02 ,  H01L29/34

CPC分类号： H01L28/40 ,  H01L27/10808 ,  F02B3/06 ,  H01L29/51

摘要： A solid state device includes a transistor (A) and a capacitor (B). The capacitor is defined by a lower polycrystalline silicon layer or electrode (20), multiple dielectric layers (22), and an upper polycrystalline silicon layer or electrode (30). The dielectric layers are formed by vapor depositing a 3.6-18.6 nm thick layer of silicon nitride on the lower polycrystalline layer. Thicker silicon nitride layers increase the failure rate and decrease the capacitance (FIG. 8). More specifically, the silicon nitride layer is deposited on a thin, about 1 nm, oxidized film or surface (24) of the polycrystalline silicon layer. The silicon nitride layer is oxidized forming a silicon dioxide layer (28) until the silicon nitride layer is only about 3 nm thick. This forms on oxide layer that is 1-8.4 nm thick. If the silicon nitride layer is reduced below 3 nm, the polycrystalline silicon tends to oxidize rapidly reducing capacitance and increasing failure (FIG. 8).

摘要翻译： 固态器件包括晶体管（A）和电容器（B）。 电容器由下多晶硅层或电极（20），多个电介质层（22）和上多晶硅层或电极（30）限定。 电介质层通过在下多晶层上气相沉积3.6-18.6nm厚的氮化硅层形成。 较厚的氮化硅层增加故障率并降低电容（图8）。 更具体地，氮化硅层沉积在多晶硅层的薄的约1nm的氧化膜或表面（24）上。 氧化氮化硅层形成二氧化硅层（28），直到氮化硅层仅为约3nm厚。 这在氧化层上形成，厚度为1-8.4nm。 如果氮化硅层减小到3nm以下，则多晶硅容易迅速氧化，降低电容并增加故障（图8）。

公开(公告)号：US4464627A

公开(公告)日：1984-08-07

申请号：US259427

申请日：1981-05-01

申请人： Chusuke Munakata ,  Kunihiro Yagi ,  Teruaki Motooka

发明人： Chusuke Munakata ,  Kunihiro Yagi ,  Teruaki Motooka

IPC分类号： G01R31/265 ,  G01R31/26

CPC分类号： G01R31/2656

摘要： A device for measuring semiconductor characteristics, wherein electrodes are installed maintaining a gap on the front and back sides of a semiconductor specimen of which the characteristics are to be measured, at least one of the electrodes being transparent, the surface of the semiconductor specimen is scanned with a pulsed narrow photon beam via the transparent electrode, and a photovoltage generated between the front and back surfaces of the semiconductor specimen is taken out from the two electrodes via the capacitive coupling, in order to observe the distribution of characteristics in the surface of the semiconductor specimen.

摘要翻译： 一种用于测量半导体特性的装置，其中电极被安装成在要测量特性的半导体试样的正面和背面保持间隙，至少一个电极是透明的，半导体试样的表面被扫描 通过透明电极具有脉冲的窄光子束，并且通过电容耦合从两个电极中取出在半导体样品的前表面和后表面之间产生的光电压，以观察表面的特性分布 半导体标本。