公开(公告)号：US4665690A

公开(公告)日：1987-05-19

申请号：US817618

申请日：1986-01-10

申请人： Yoshitaka Nomoto ,  Hirofumi Yamauchi ,  Shigeru Sakurai ,  Kenji Ohkubo ,  Hideaki Kurita ,  Kunihiro Yagi

发明人： Yoshitaka Nomoto ,  Hirofumi Yamauchi ,  Shigeru Sakurai ,  Kenji Ohkubo ,  Hideaki Kurita ,  Kunihiro Yagi

IPC分类号： F01N3/01 ,  F01N3/025 ,  F01N3/029 ,  F01N3/032 ,  F01N9/00 ,  F01N11/00 ,  F01N3/02

CPC分类号： F01N3/0293 ,  F01N11/00 ,  F01N3/0253 ,  F01N3/029 ,  F01N3/032 ,  F01N9/002 ,  F01N2390/02 ,  F01N2390/04 ,  F01N2550/00 ,  F01N3/01 ,  Y02T10/47 ,  Y10S55/10 ,  Y10S55/30

摘要： An internal combustion engine is provided in its exhaust system with a particulate filter for trapping combustible particulates contained in exhaust gas. A combustion promoting material injection device is provided for injecting a material for promoting combustion of the combustible particulates into the exhaust system upstream of the particulate filter. Further there are provided a bypass exhaust passage which bypasses the combustion promoting material injection device and the particulate filter, and a flow control valve which controls the amount of exhaust gas flowing through the bypass exhaust passage to control the amount of exhaust gas flowing into the particulate filter when said combustion promoting material is to be injected from the injecting device. When the combustion promoting material is injected, the flow control valve controls the amount of exhaust gas flowing into the particulate filter so that the combustion promoting material can uniformly adhere to the surface of the combustible particulates over the entire area thereof and so that the combustion temperature of the combustible particulates is prevented from rising abnormally high.

摘要翻译： 在其排气系统中设置有用于捕集废气中所含的可燃微粒的微粒过滤器的内燃机。 提供了一种燃烧促进材料注入装置，用于将可燃颗粒燃烧的材料注入到颗粒过滤器上游的排气系统中。 此外，还设置有绕过燃烧促进材料注入装置和微粒过滤器的旁通排气通道，以及流量控制阀，其控制流过旁路排气通道的废气量以控制流入颗粒物的废气量 当所述燃烧促进材料从注入装置注入时，过滤器。 当燃烧促进材料被注入时，流量控制阀控制流入微粒过滤器的废气量，使得促进燃烧材料能够在其整个区域上均匀地附着在可燃颗粒的表面上，从而燃烧温度 的可燃微粒被防止异常升高。

公开(公告)号：US20080142967A1

公开(公告)日：2008-06-19

申请号：US12070321

申请日：2008-02-15

申请人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

发明人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L21/823475 ,  H01L21/823481 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13012 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/013

摘要： A semiconductor device including: a semiconductor layer including an element formation region including an element; an interlayer dielectric layer above the semiconductor layer; an electrode pad above the interlayer dielectric layer; a passivation layer above the electrode pad and having an opening exposing at least part of the electrode pad; and a bump in the opening and covering at least part of the element, the bump including first and second edges, the semiconductor layer having a forbidden region including: a first specific distance outward from a first line directly below the first edge, a second specific distance inward from the first line, a third specific distance outward from a second line directly below the second edge, and a fourth specific distance inward from the second line.

摘要翻译： 一种半导体器件，包括：包括元件形成区域的半导体层，所述元件形成区域包括元件; 半导体层上方的层间电介质层; 层间介电层上方的电极焊盘; 在所述电极焊盘上方具有暴露至少部分所述电极焊盘的开口的钝化层; 并且在所述开口中的凸起并且覆盖所述元件的至少一部分，所述凸块包括第一和第二边缘，所述半导体层具有禁止区域，所述禁止区域包括：从所述第一边缘正下方的第一线向外的第一特定距离， 从第一线向内的距离，距离第二边缘正下方的第二线向外的第三特定距离以及从第二线向内的第四特定距离。

公开(公告)号：US4116768A

公开(公告)日：1978-09-26

申请号：US839848

申请日：1977-10-06

申请人： Yoshikazu Isowa ,  Muneki Ohmori ,  Hideaki Kurita ,  Tetsuya Ichikawa ,  Masanari Sato ,  Kaoru Mori ,  Kiyotaka Oyama

发明人： Yoshikazu Isowa ,  Muneki Ohmori ,  Hideaki Kurita ,  Tetsuya Ichikawa ,  Masanari Sato ,  Kaoru Mori ,  Kiyotaka Oyama

IPC分类号： A61K38/00 ,  C07K1/02 ,  C07K5/06 ,  C07K5/072 ,  C07K5/078 ,  C07K5/083 ,  C07K5/093 ,  C07K5/097 ,  C07K5/103 ,  C07K5/107 ,  C07K5/113 ,  C12P21/02 ,  C12D13/06

CPC分类号： C12P21/02 ,  C07K1/02 ,  C07K5/06043 ,  C07K5/06095 ,  C07K5/06104 ,  C07K5/06113 ,  C07K5/06147 ,  C07K5/0804 ,  C07K5/0819 ,  C07K5/1008 ,  C07K5/1013 ,  C07K5/1016 ,  C07K5/1021 ,  A61K38/00 ,  Y02P20/55

摘要： A peptide having the formulaX--A--B--Ywherein A and B are the same or different and represent an amino acid residue or a peptide residue; X represents an amino protective group and Y represents a carboxyl protective group, is prepared by reacting an amino acid or peptide having an N-terminal protective group or a salt thereof of the formula:X--A--OHwith an amino acid or peptide having a C-terminal protective group or a salt thereof of the formula:H--B--Yin the presence of metalloproteinase in an aqueous solution having a pH which maintains the enzyme activity of said metalloproteinase.

公开(公告)号：US4086136A

公开(公告)日：1978-04-25

申请号：US732543

申请日：1976-10-14

申请人： Yoshikazu Isowa ,  Muneki Ohmori ,  Hideaki Kurita ,  Tetsuya Ichikawa ,  Masanari Sato ,  Kaoru Mori

发明人： Yoshikazu Isowa ,  Muneki Ohmori ,  Hideaki Kurita ,  Tetsuya Ichikawa ,  Masanari Sato ,  Kaoru Mori

IPC分类号： C07K1/02 ,  C07K5/072 ,  C07K5/075 ,  C07K5/093 ,  C12P21/02 ,  C12D13/06

CPC分类号： C07K5/06095 ,  C07K1/02 ,  C07K5/0819 ,  C12P21/02 ,  Y02P20/55

摘要： A peptide having the formulaX--A--B--Y--wherein A and B are the same or different and each represents an amino acid residue or a peptide residue, X represents an amino protective group, Y represents a carboxyl protective group selected from the group consisting of tertiary alkoxy, and benzyloxy, benzylamino and benzhydrylamino which can be substituted with an inert substituent, is prepared by a process which comprises reacting an amino acid or peptide having an N-terminal protective group, or a salt thereof of the formula:X--A--OHwith an amino acid or peptide having a C-terminal protective group or a salt thereof of the formula:H--B--Yin the presence of a thiol proteinase or serine proteinase enzyme in an aqueous solution having a pH sufficient to maintain the enzyme activity of said thiol proteinase or serine proteinase.

摘要翻译： 一种具有式XABY的肽，其中A和B相同或不同，各自表示氨基酸残基或肽残基，X表示氨基保护基，Y表示选自叔烷氧基， 和可以被惰性取代基取代的苄氧基，苄氨基和二苯甲基氨基，是通过包括使具有下式的N-末端保护基的氨基酸或肽或其盐反应的方法制备的：

公开(公告)号：US07649260B2

公开(公告)日：2010-01-19

申请号：US11424891

申请日：2006-06-19

申请人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

发明人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

IPC分类号： H01L23/532

CPC分类号： H01L24/05 ,  H01L2224/05093 ,  H01L2224/05095 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device including: a semiconductor layer including an active region and an isolation region provided around the active region; an element formed in the active region; an interlayer dielectric formed above the semiconductor layer; and an electrode pad formed above the interlayer dielectric and having a rectangular planar shape having a short side and a long side, the electrode pad at least partially covering the element when viewed from a top side, and the semiconductor layer positioned in a specific range outward from a line extending vertically downward from the short side of the electrode pad being a forbidden region.

摘要翻译： 一种半导体器件，包括：半导体层，包括有源区和设置在有源区周围的隔离区; 在活性区域中形成的元素; 形成在所述半导体层上方的层间电介质; 以及形成在所述层间电介质的上方并具有短边和长边的矩形平面形状的电极焊盘，所述电极焊盘从顶侧观察时至少部分地覆盖所述元件，并且所述半导体层位于特定范围外侧 从作为禁止区域的电极焊盘的短边垂直向下延伸的线。

公开(公告)号：US07598569B2

公开(公告)日：2009-10-06

申请号：US11429581

申请日：2006-05-05

申请人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

发明人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

IPC分类号： H01L29/78

CPC分类号： H01L21/823462 ,  H01L27/088 ,  H01L29/1037 ,  H01L29/1041 ,  H01L29/42368 ,  H01L29/78 ,  H01L2224/05022 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/013

摘要： A semiconductor device including: a semiconductor layer; a transistor formed in the semiconductor layer and including a gate insulating layer and a gate electrode, the transistor being a high voltage transistor in which an insulating layer having a thickness greater than the thickness of the gate insulating layer is formed under an end portion of the gate electrode; an interlayer dielectric formed above the transistor; and an electrode pad formed above the interlayer dielectric and positioned over at least part of the gate electrode when viewed from a top side.

摘要翻译： 一种半导体器件，包括：半导体层; 形成在所述半导体层中并且包括栅极绝缘层和栅电极的晶体管，所述晶体管是高压晶体管，其中在所述栅极绝缘层的端部的下方形成有厚度大于所述栅极绝缘层的厚度的绝缘层 栅电极 形成在晶体管上方的层间电介质; 以及形成在所述层间电介质上方并且位于所述栅电极的至少一部分上方的电极焊盘，当从顶侧观察时。

公开(公告)号：US20080142906A1

公开(公告)日：2008-06-19

申请号：US12070320

申请日：2008-02-15

申请人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

发明人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

IPC分类号： H01L27/088

CPC分类号： H01L24/13 ,  H01L21/823475 ,  H01L21/823481 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13012 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/013

摘要： A semiconductor device comprising: a semiconductor layer including an element formation region, and first and second spaced apart isolation regions; an element in the element formation region; an interlayer dielectric layer above the semiconductor layer; an electrode pad above the interlayer dielectric layer; a passivation layer above the electrode pad and having an opening which exposes part of the electrode pad; and a bump in the opening and covering part of the element when viewed from a top side, the bump including a first edge when viewed from the top side, the first isolation region being formed in a first region, the first region including a first specific distance outward from a first line directly below the first edge of the bump, the second isolation region being formed in a second region, the second region including a second specific distance inward from the first line.

摘要翻译： 一种半导体器件，包括：半导体层，包括元件形成区域，以及第一和第二间隔开的隔离区域; 元素形成区域中的元素; 半导体层上方的层间电介质层; 层间介电层上方的电极焊盘; 在所述电极焊盘上方具有暴露所述电极焊盘的一部分的开口的钝化层; 以及当从顶侧观察时所述元件的开口和覆盖部分中的凸块，所述凸块包括从顶侧观察时的第一边缘，所述第一隔离区域形成在第一区域中，所述第一区域包括第一特定 从凸起的第一边缘正下方的第一线向外延伸，第二隔离区域形成在第二区域中，第二区域包括从第一线向内的第二特定距离。

公开(公告)号：US07777334B2

公开(公告)日：2010-08-17

申请号：US12070320

申请日：2008-02-15

申请人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

发明人： Akinori Shindo ,  Masatoshi Tagaki ,  Hideaki Kurita

IPC分类号： H01L23/485

CPC分类号： H01L24/13 ,  H01L21/823475 ,  H01L21/823481 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13012 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/013

摘要： A semiconductor device comprising: a semiconductor layer including an element formation region, and first and second spaced apart isolation regions; an element in the element formation region; an interlayer dielectric layer above the semiconductor layer; an electrode pad above the interlayer dielectric layer; a passivation layer above the electrode pad and having an opening which exposes part of the electrode pad; and a bump in the opening and covering part of the element when viewed from a top side, the bump including a first edge when viewed from the top side, the first isolation region being formed in a first region, the first region including a first specific distance outward from a first line directly below the first edge of the bump, the second isolation region being formed in a second region, the second region including a second specific distance inward from the first line.

摘要翻译： 一种半导体器件，包括：半导体层，包括元件形成区域，以及第一和第二间隔开的隔离区域; 元素形成区域中的元素; 半导体层上方的层间电介质层; 层间介电层上方的电极焊盘; 在所述电极焊盘上方具有暴露所述电极焊盘的一部分的开口的钝化层; 以及当从顶侧观察时所述元件的开口和覆盖部分中的凸块，所述凸块包括从顶侧观察时的第一边缘，所述第一隔离区域形成在第一区域中，所述第一区域包括第一特定 从凸起的第一边缘正下方的第一线向外延伸，第二隔离区域形成在第二区域中，第二区域包括从第一线向内的第二特定距离。

公开(公告)号：US20100092892A1

公开(公告)日：2010-04-15

申请号：US12521301

申请日：2007-12-21

申请人： Hideaki Kurita ,  Hideki Matsuda

发明人： Hideaki Kurita ,  Hideki Matsuda

IPC分类号： G03F7/00 ,  B32B27/00 ,  B05D5/06

CPC分类号： G02F1/133512 ,  B32B5/142 ,  B32B27/08 ,  B32B27/18 ,  B32B27/20 ,  B32B27/22 ,  B32B27/26 ,  B32B27/30 ,  B32B27/302 ,  B32B27/308 ,  B32B27/32 ,  B32B2250/24 ,  B32B2307/306 ,  B32B2307/4026 ,  B32B2307/702 ,  B32B2307/75 ,  B32B2457/20 ,  B32B2457/202 ,  B32B2457/204 ,  B32B2457/206 ,  C08F265/06 ,  G02B5/201 ,  G02F1/133516 ,  G02F2001/136231 ,  G02F2202/022 ,  G02F2202/04 ,  G03F7/0007 ,  G03F7/027 ,  G03F7/11 ,  Y10T428/31504 ,  Y10T428/31544

摘要： An object is to manufacture a substrate having a black matrix pattern with excellent ink repellency on the surface by an easy method. A fluorine-containing compound coated film in which 1 to 60 mm3 of an organic material layer containing 30 to 100% of a fluorine-containing compound is provided on a supporting film per 1 m2 of the supporting film and the organic material layer has a contact angle to xylene of 20 degrees or more is used.

摘要翻译： 目的是通过简单的方法在表面上制造具有优异的拒油性的黑矩阵图案的基板。 在每1m 2的支撑膜上的支撑膜上设置有含有30〜100％含氟化合物的有机材料层1〜60mm 3的含氟复合涂膜，有机材料层具有接触 使用20度以上的与二甲苯的角度。

公开(公告)号：US4119493A

公开(公告)日：1978-10-10

申请号：US803350

申请日：1977-06-03

申请人： Yoshikazu Isowa ,  Muneki Ohmori ,  Hideaki Kurita ,  Tetsuya Ichikawa ,  Masanari Sato ,  Kaoru Mori

发明人： Yoshikazu Isowa ,  Muneki Ohmori ,  Hideaki Kurita ,  Tetsuya Ichikawa ,  Masanari Sato ,  Kaoru Mori

IPC分类号： A61K38/00 ,  C07K1/02 ,  C07K5/06 ,  C07K5/072 ,  C07K5/078 ,  C07K5/083 ,  C07K5/093 ,  C07K5/097 ,  C07K5/103 ,  C07K5/107 ,  C07K5/113 ,  C12P21/02 ,  C12D13/06

CPC分类号： C12P21/02 ,  C07K1/02 ,  C07K5/06043 ,  C07K5/06095 ,  C07K5/06104 ,  C07K5/06113 ,  C07K5/06147 ,  C07K5/0804 ,  C07K5/0819 ,  C07K5/1008 ,  C07K5/1013 ,  C07K5/1016 ,  C07K5/1021 ,  A61K38/00 ,  Y02P20/55 ,  Y10S435/832 ,  Y10S435/837 ,  Y10S435/839 ,  Y10S435/842 ,  Y10S435/873 ,  Y10S435/886 ,  Y10S435/896 ,  Y10S435/897 ,  Y10S435/918

摘要： A peptide having the formulaX--A--B--Ywherein A and B are the same or different and represent an amino acid residue or a peptide residue; X represents an amino protective group and Y represents a carboxyl protective group, is prepared by reacting an amino acid or peptide having an N-terminal protective group or a salt thereof of the formula:X--A--OHwith an amino acid or peptide having a C-terminal protective group or a salt thereof of the formula:H--B--Yin the presence of metalloproteinase in an aqueous solution having a pH which maintains the enzyme activity of said metalloproteinase.

摘要翻译： 具有式X-A-B-Y的肽，其中A和B相同或不同，代表氨基酸残基或肽残基; X表示氨基保护基，Y表示羧基保护基，通过使具有下式的N-末端保护基的氨基酸或肽或其盐反应来制备：