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公开(公告)号：US08492292B2
公开(公告)日：2013-07-23
申请号：US12820395
申请日：2010-06-22
IPC分类号： H01L21/314
CPC分类号： H01L21/3105
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.
摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，用于处理衬底的方法包括提供其上设置有氧化物层的衬底，所述氧化物层包括一个或多个缺陷; 以及将所述氧化物层暴露于由包含含氧气体的工艺气体形成的等离子体，以修复所述一个或多个缺陷。 在一些实施例中，氧化物层可以形成在衬底上。 在一些实施例中，形成氧化物层还包括在衬底顶部沉积氧化物层。 在一些实施例中，形成氧化物层还包括热氧化衬底的表面以形成氧化物层。 在一些实施例中，在表面的热氧化期间，处理温度保持在约700摄氏度或更低。
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公开(公告)号：US20100330814A1
公开(公告)日：2010-12-30
申请号：US12820395
申请日：2010-06-22
IPC分类号： H01L21/314
CPC分类号： H01L21/3105
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.
摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，用于处理衬底的方法包括提供其上设置有氧化物层的衬底，所述氧化物层包括一个或多个缺陷; 以及将所述氧化物层暴露于由包含含氧气体的工艺气体形成的等离子体，以修复所述一个或多个缺陷。 在一些实施例中，氧化物层可以形成在衬底上。 在一些实施例中，形成氧化物层还包括在衬底顶部沉积氧化物层。 在一些实施例中，形成氧化物层还包括热氧化衬底的表面以形成氧化物层。 在一些实施例中，在表面的热氧化期间，处理温度保持在约700摄氏度或更低。
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3.发明申请PLASMA AND THERMAL ANNEAL TREATMENT TO IMPROVE OXIDATION RESISTANCE OF METAL-CONTAINING FILMS 审中-公开等离子体和热退火处理以提高含金属膜的耐氧化性公开(公告)号：US20100120245A1
公开(公告)日：2010-05-13
申请号：US12267102
申请日：2008-11-07
IPC分类号： H01L21/321
CPC分类号： B32B38/0008 , B32B38/0036 , B32B2038/0092 , B32B2309/02 , B32B2309/04 , B32B2309/105 , B32B2319/00 , B32B2457/00 , C23C16/56 , H01L21/28061 , H01L21/28247 , H01L21/28562 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L27/10861 , H01L27/10888 , H01L29/4941 , H01L29/4966 , H01L29/66181
摘要： Method and apparatus are provided for treatment of a deposited material layer. In one embodiment, a method is provided for processing a substrate including depositing a metal-containing layer using an atomic layer deposition technique, exposing the metal-containing layer to a plasma treatment process at a temperature of less than about 200° C., and exposing the metal-containing layer to a thermal anneal process at a temperature of about 600° C. or greater. The plasma treatment process and/or the thermal anneal process may use a nitrating gas, which may form a passivating surface or layer with the metal-containing layer.
摘要翻译： 提供了用于处理沉积材料层的方法和装置。 在一个实施例中，提供了一种用于处理衬底的方法，包括使用原子层沉积技术沉积含金属层，在小于约200℃的温度下将含金属层暴露于等离子体处理工艺，以及 在约600℃或更高的温度下将含金属层暴露于热退火工艺。 等离子体处理工艺和/或热退火工艺可以使用硝化气体，其可与含金属层形成钝化表面或层。
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公开(公告)号：US20100267247A1
公开(公告)日：2010-10-21
申请号：US12762425
申请日：2010-04-19
申请人： Kai Ma , Yoshitaka Yokota , Christopher S. Olsen
发明人： Kai Ma , Yoshitaka Yokota , Christopher S. Olsen
IPC分类号： H01L21/02
CPC分类号： H01J37/32165 , H01J37/321 , H01L21/02238 , H01L21/02252 , H01L21/28211 , H01L21/28247 , H01L21/28273 , H01L21/28282 , H01L21/31662 , H01L21/321 , H01L21/32105
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.
摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 二等离子体源用于在等离子体反应器中形成等离子体。 在各种实施例中，不同数量的功率被提供给以第一频率操作的电源和随时间以第二频率操作的电源。
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公开(公告)号：US20100216317A1
公开(公告)日：2010-08-26
申请号：US12691969
申请日：2010-01-22
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电 卡盘和冷却液和气体对流。
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公开(公告)号：US20110061812A1
公开(公告)日：2011-03-17
申请号：US12720926
申请日：2010-03-10
申请人： Udayan Ganguly , Yoshitaka Yokota , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Jose A. Marin , Aijit Balakrishna , Jacob Newman , Stephen C. Hickerson
发明人： Udayan Ganguly , Yoshitaka Yokota , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Jose A. Marin , Aijit Balakrishna , Jacob Newman , Stephen C. Hickerson
IPC分类号： H01L21/465
CPC分类号： H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
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公开(公告)号：US08435906B2
公开(公告)日：2013-05-07
申请号：US12691969
申请日：2010-01-22
IPC分类号： H01L21/31
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电 卡盘和冷却液和气体对流。
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公开(公告)号：US08043981B2
公开(公告)日：2011-10-25
申请号：US12762425
申请日：2010-04-19
申请人： Kai Ma , Yoshitaka Yokota , Christopher S. Olsen
发明人： Kai Ma , Yoshitaka Yokota , Christopher S. Olsen
IPC分类号： H01L21/461 , H01L21/302 , H01L21/469 , H01L21/31
CPC分类号： H01J37/32165 , H01J37/321 , H01L21/02238 , H01L21/02252 , H01L21/28211 , H01L21/28247 , H01L21/28273 , H01L21/28282 , H01L21/31662 , H01L21/321 , H01L21/32105
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.
摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 二等离子体源用于在等离子体反应器中形成等离子体。 在各种实施例中，不同数量的功率被提供给以第一频率操作的电源和随时间以第二频率操作的电源。
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公开(公告)号：US20100267248A1
公开(公告)日：2010-10-21
申请号：US12762467
申请日：2010-04-19
申请人： Kai Ma , Christopher S. Olsen , Yoshitaka Yokota
发明人： Kai Ma , Christopher S. Olsen , Yoshitaka Yokota
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , H01L21/02252 , H01L21/0234 , H01L21/28247 , H01L21/3105 , H01L21/31654
摘要： Methods and apparatus for post treating an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, the oxide layer is formed by thermal oxidation or plasma oxidation and treated with a plasma comprising helium. The helium-containing plasma may also include hydrogen, neon, argon and combinations thereof. In one or more embodiments, a SiO2 oxide layer is formed on a silicon substrate and treated with a plasma to improve the interface between the silicon substrate and the SiO2 oxide layer.
摘要翻译： 公开了用于后处理半导体衬底上的氧化物层的方法和装置。 在一个或多个实施方案中，通过热氧化或等离子体氧化形成氧化物层，并用包含氦的等离子体处理。 含氦的等离子体还可以包括氢，氖，氩及其组合。 在一个或多个实施例中，在硅衬底上形成SiO 2氧化物层并用等离子体处理以改善硅衬底和SiO 2氧化物层之间的界面。
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10.发明申请POST OXIDATION ANNEALING OF LOW TEMPERATURE THERMAL OR PLASMA BASED OXIDATION 审中-公开低温热或基于等离子体氧化的氧化后退火公开(公告)号：US20090311877A1
公开(公告)日：2009-12-17
申请号：US12143626
申请日：2008-06-20
IPC分类号： H01L21/316
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02337 , H01L21/28247 , H01L29/40114 , H01L29/40117 , H01L29/517
摘要： Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.
摘要翻译： 本发明的实施例提供了在半导体衬底上形成氧化物层的方法。 在一些实施例中，在半导体衬底上形成氧化物层的方法包括：在第一温度低于约800摄氏度的氧化工艺中，使用具有第一工艺气体的氧化工艺在衬底上形成氧化物层; 以及在第二工艺气体的存在下和在第二温度下对形成在衬底上的氧化物层进行退火。 氧化过程可以是在约800摄氏度或更低的温度下进行的等离子体或热氧化过程。 在一些实施例中，后氧化退火工艺可以是在至少约700摄氏度，至少约800摄氏度或至少约800摄氏度的温度下执行的尖峰或浸泡快速热处理，激光退火或闪光退火 950摄氏度。
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