Solid-state imaging device having a low impedance structure
    5.
    发明授权
    Solid-state imaging device having a low impedance structure 失效
    具有低阻抗结构的固态成像装置

    公开(公告)号:US5502488A

    公开(公告)日:1996-03-26

    申请号:US160926

    申请日:1993-12-01

    IPC分类号: H01L27/146 H04N5/335

    CPC分类号: H01L27/14643

    摘要: A solid-state imaging device comprises a semiconductor substrate, a plurality of pixels formed on the semiconductor substrate, an output amplifier circuit for converting a pixel signal generated in each of the pixels to an imaging signal, a plurality of horizontal selecting lines connected to the pixels, a plurality of vertical selecting lines connected to the pixels, and a pixel address circuit for addressing the pixels by applying a read-out signal to the horizontal and vertical selecting lines. The output amplifier circuit includes an output amplifier for converting the pixel signals input from the pixels via the vertical selecting lines, to an imaging signal, and a load resistance reducing circuit for reducing a load resistance of the switching portion in the pixels.

    摘要翻译: 一种固态成像装置,包括半导体衬底,形成在半导体衬底上的多个像素,用于将每个像素中产生的像素信号转换为成像信号的输出放大器电路,连接到该像素的多个水平选择线 像素,连接到像素的多个垂直选择线以及用于通过向水平和垂直选择线施加读出信号来寻址像素的像素地址电路。 输出放大器电路包括用于将从像素输入的像素信号经由垂直选择线转换为成像信号的输出放大器和用于降低像素中的切换部分的负载电阻的负载电阻降低电路。

    Solid-state imaging device using high relative dielectric constant
material as insulating film
    6.
    发明授权
    Solid-state imaging device using high relative dielectric constant material as insulating film 失效
    使用高相对介电常数材料作为绝缘膜的固态成像装置

    公开(公告)号:US5307169A

    公开(公告)日:1994-04-26

    申请号:US878855

    申请日:1992-05-05

    IPC分类号: H01L27/146 H04N5/335

    CPC分类号: H01L27/14643

    摘要: A solid-state imaging device comprises a semiconductor substrate, a plurality of pixels formed on the semiconductor substrate and generating imaging signals, and an output amplifier converting a pixel signal generated from the pixel to an imaging signal, and outputting the image signal. The pixel includes a photoelectric converting portion generating a charge in accordance with the amount of received light, a capacitor storing a charge generated from the photoelectric converting portion, and a switching portion for reading out the charge stored in the capacitor as the pixel signal. The capacitor includes a storing region formed on at least one of a part or an adjacent portion of the photoelectric converting portion, a capacitor insulating film formed on the storing region, the capacitor insulating film being made of a high dielectric material having a high relative dielectric constant, and a capacitor electrode formed on the capacitor insulating film.

    摘要翻译: 固态成像装置包括半导体衬底,形成在半导体衬底上的多个像素并产生成像信号,以及输出放大器,将从像素产生的像素信号转换为成像信号,并输出图像信号。 像素包括根据接收光量产生电荷的光电转换部分,存储从光电转换部分产生的电荷的电容器和用于读出存储在电容器中的电荷的开关部分作为像素信号。 电容器包括形成在光电转换部分的一部分或相邻部分中的至少一个上的存储区域,形成在存储区域上的电容器绝缘膜,电容器绝缘膜由具有高相对电介质的高介电材料制成 电容器电极形成在电容器绝缘膜上。

    Connector
    8.
    发明申请
    Connector 有权
    连接器

    公开(公告)号:US20090186524A1

    公开(公告)日:2009-07-23

    申请号:US12353289

    申请日:2009-01-14

    IPC分类号: H01R13/40

    摘要: First terminal fitting accommodating chambers (61A) are arranged in a width direction in a housing (41) of a connector (40) for receiving first terminal fittings (42). A second terminal fitting accommodating chamber (61B) for receiving a second terminal fitting (42) is adjacent the first terminal fitting accommodating chambers (61A) in a height direction and between the first terminal fitting accommodating chambers (61A) in the width direction. First lances (64A) are in the first terminal fitting accommodating chambers (61A) for engaging the inserted terminal fittings (42) and are deformable into first deformation spaces (65A) lateral to the second terminal fitting accommodating chamber (61B). A second lance (64B) is in the second terminal fitting accommodating chamber (61B) for engaging the second terminal fitting (42) and is deformable into a second deformation space (65B) between the first terminal fitting accommodating chambers (61A).

    摘要翻译: 第一端子接头容纳室(61A)沿宽度方向布置在用于容纳第一端子接头(42)的连接器(40)的壳体(41)中。 用于容纳第二端子接头(42)的第二端子接头容纳室(61B)在第一端子接头容纳室(61A)的高度方向上相对于第一端子接头容纳室(61A)在宽度方向上相邻。 第一枪(64A)位于用于与插入的端子接头(42)接合的第一端子接头容纳室(61A)中,并且可变形成第二端子接头容纳室(61B)的第一变形空间(65A)。 第二个喷枪(64B)位于第二端子接头容纳室(61B)中,用于接合第二端子接头(42),并可变形成第一端子接头容纳室(61A)之间的第二变形空间(65B)。

    Ultrasonic transducer, method for manufacturing ultrasonic transducer, and ultrasonic endoscope
    9.
    发明申请
    Ultrasonic transducer, method for manufacturing ultrasonic transducer, and ultrasonic endoscope 有权
    超声波换能器,超声波换能器制造方法及超声波内窥镜

    公开(公告)号:US20080200811A1

    公开(公告)日:2008-08-21

    申请号:US11977191

    申请日:2007-10-24

    IPC分类号: A61B8/00 G01N29/00 A61B1/00

    摘要: An ultrasonic transducer according to the invention includes a flexible sheet, a rigid body portion including a lower electrode made of at least a thin-film conductive material on a surface of the flexible sheet, a dividing portion which divides the rigid body portion into segments, and a plurality of transducer elements including the divided rigid body portion, has at least one transducer cell composed of one of the segments, an insulating partition portion bonded to the segment, an air gap portion surrounded by the partition portion, an upper electrode opposed to the lower electrode extending to the partition portion to sandwich the air gap portion therebetween, and an upper insulating layer formed on the upper electrode, and includes an upper protection film which continuously covers a surface portion of the transducer elements and the dividing portion.

    摘要翻译: 根据本发明的超声波换能器包括柔性片,刚性体部分,其包括在柔性片的表面上由至少薄膜导电材料制成的下电极,将刚体部分分割成段的分割部分, 并且包括分割刚体部的多个换能器元件具有至少一个由一个片段组成的换能器单元,与该片段接合的绝缘隔板部分,被该分隔部包围的气隙部分, 所述下电极延伸到所述分隔部分以夹住所述气隙部分,以及形成在所述上电极上的上绝缘层,并且包括连续覆盖所述换能器元件的表面部分和所述分割部分的上保护膜。