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公开(公告)号：US5389491A
公开(公告)日：1995-02-14
申请号：US82399
申请日：1993-06-28
CPC分类号： G03F7/0382 , G03F7/0045
摘要： A negative working resist composition comprising (a) an alkali-soluble resin, (b) an aromatic compound having at least two groups of the formula: --OCH.sub.2 OR.sup.1 wherein R.sup.1 is alkyl or aralkyl, (c) a photoacid generator, and (d) a solvent, can form fine patterns with high resolution when exposed to deep UV, KrF excimer laser light, etc. due to high light transmittance and high sensitivity.
摘要翻译： 一种负性工作抗蚀剂组合物，其包含（a）碱溶性树脂，（b）具有至少两个下式的-OCH 2 OR 1的芳族化合物，其中R 1是烷基或芳烷基，（c）光酸产生剂，和（d） 溶剂，由于透光率高，灵敏度高，可以在暴露于深紫外线，KrF准分子激光等情况下以高分辨率形成精细图案。
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2.发明授权Pattern forming contrast enhanced material utilizing water soluble photosensitive diazo compound and pattern forming method 失效图案形成对比增强材料利用水溶性光敏重氮化合物和图案形成方法
公开(公告)号：US5272036A
公开(公告)日：1993-12-21
申请号：US860209
申请日：1992-03-27
IPC分类号： C07C245/14 , C07C245/18 , C07D213/50 , G03F7/09 , G03F7/023 , G03F7/30
CPC分类号： G03F7/091 , C07C245/14 , C07C245/18 , C07D213/50 , Y10S430/146
摘要： Disclosed is a pattern forming contrast enhanced material comprising (a) a water soluble photosensitive compound selected from the group consisting of a water soluble aliphatic photosensitive compound (excluding ring compounds) having one or more of the group expressed by the formula (I), an aliphatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), an aromatic photosensitive quaternary ammonium salt having one or more of the group expressed by the formula (I), and a photosensitive pyridinium salt having one or more of the group expressed by the formula (I), (b) a water soluble resin and (c) water and a pattern forming method using the same. ##STR1## According to the present invention, this material is used as a contrast enhanced layer in the exposure effected by deep ultraviolet ray such as an excimer laser beam to form a good fine pattern of a submicron order.
摘要翻译： 公开了形成对比度增强材料的图案，其包含（a）选自具有一个或多个由式（I）表示的基团的水溶性脂族光敏化合物（不包括环化合物）的水溶性感光性化合物， 具有由式（I）表示的基团中的一个或多个的芳香族光敏季铵盐，具有式（I）表示的基团中的一个或多个的芳族光敏季铵盐和具有一个或多个 由式（I）表示的基团，（b）水溶性树脂和（c）水和使用其的图案形成方法。 （I）根据本发明，在通过诸如准分子激光束的深紫外线进行的曝光中，将该材料用作对比度增强层，以形成亚微米级的良好精细图案。
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公开(公告)号：US5558971A
公开(公告)日：1996-09-24
申请号：US407611
申请日：1995-03-21
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
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公开(公告)号：US5576359A
公开(公告)日：1996-11-19
申请号：US272752
申请日：1994-07-11
IPC分类号： C07C309/75 , G03F7/09 , C08L63/02
CPC分类号： C07C309/75 , G03F7/091
摘要： A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
摘要翻译： 包含至少一种在分子中具有一个或多个缩水甘油基的化合物和至少一种蒽衍生物和能够溶解这些化合物的溶剂的深紫外线吸收剂在形成抗蚀剂图案期间有效地防止来自基板的深紫外光的反射 ，导致形成超细图案而不引起开槽和停止。
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公开(公告)号：US5558976A
公开(公告)日：1996-09-24
申请号：US564591
申请日：1995-11-29
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
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6.发明授权Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition 失效每种含有相同的Bismide化合物，酸产生剂和抗蚀剂组合物以及从组合物形成图案的方法公开(公告)号：US07374857B2
公开(公告)日：2008-05-20
申请号：US10496014
申请日：2002-11-28
IPC分类号： G03C1/00 , C07D209/36
CPC分类号： C07D209/48 , C07D487/04 , G03F7/0045 , G03F7/0382 , G03F7/0392 , Y10S430/121
摘要： The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1).
摘要翻译： 本发明涉及用作半导体元件等的制造中使用的化学增幅抗蚀剂组合物的酸发生剂的新型双酰亚胺化合物或使用该化合物的酸产生剂和抗蚀剂组合物， 使用所述组合物的图案形成方法，还涉及用作双酰亚胺化合物的合成n中间体和可用作功能性化合物如耐热聚合物或感光材料的中间体的双（N-羟基）邻苯二甲酰亚胺化合物，以及 提供由通式[1]表示的双酰亚胺化合物：其中R和A 1如权利要求1所定义。
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7.发明申请Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition 失效每种含有相同的Bismide化合物，酸产生剂和抗蚀剂组合物以及从组合物形成图案的方法公开(公告)号：US20050038261A1
公开(公告)日：2005-02-17
申请号：US10496014
申请日：2002-11-28
IPC分类号： C07D209/48 , C07D487/04 , G03F7/004 , G03F7/038 , G03F7/039 , C07D43/02
CPC分类号： C07D209/48 , C07D487/04 , G03F7/0045 , G03F7/0382 , G03F7/0392 , Y10S430/121
摘要： The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1.)
摘要翻译： 本发明涉及用作半导体元件等的制造中使用的化学增幅抗蚀剂组合物的酸发生剂的新型双酰亚胺化合物或使用该化合物的酸产生剂和抗蚀剂组合物， 使用所述组合物的图案形成方法，还涉及用作双酰亚胺化合物的合成n中间体和可用作功能性化合物如耐热聚合物或感光材料的中间体的双（N-羟基）邻苯二甲酰亚胺化合物，以及 提供由通式[1]表示的双酰亚胺化合物：（其中R和A1如权利要求1所定义）
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8.发明授权Process for forming a pattern on a semiconductor substrate using a deep ultraviolet absorbent composition 失效使用深紫外线吸收剂组合物在半导体衬底上形成图案的工艺
公开(公告)号：US5677112A
公开(公告)日：1997-10-14
申请号：US687989
申请日：1996-07-29
IPC分类号： C07C309/75 , G03F7/09 , G03C5/00
CPC分类号： C07C309/75 , G03F7/091
摘要： A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
摘要翻译： 包含至少一种在分子中具有一个或多个缩水甘油基的化合物和至少一种蒽衍生物和能够溶解这些化合物的溶剂的深紫外线吸收剂在形成抗蚀剂图案期间有效地防止来自基板的深紫外光的反射 ，导致形成超细图案而不引起开槽和停止。
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9.发明授权Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent 失效使用含有具有重氮基的光敏化合物，碱溶性聚合物，能够将pH调节至4以下的化合物的材料和溶剂形成高灵敏度阳性图案的方法
公开(公告)号：US5169741A
公开(公告)日：1992-12-08
申请号：US696994
申请日：1991-05-03
申请人： Yoshiyuki Tani , Masayuki Endo
发明人： Yoshiyuki Tani , Masayuki Endo
CPC分类号： G03F7/0163 , G03F7/0226 , Y10S430/146
摘要： The present invention provides a method for forming resist patterns for exposure to a KrF excimer laser of 248.4 nm. The method includes supplying a pattern-forming material containing a photosensitive compound having a diazo group as a photosensitive group, an alkaline soluble polymer, and a solvent capable of solving the photosensitive compound and the polymer, with the pattern-forming material being adapted to a pH of 4 or less, onto a substrate to form a film. The pattern-forming material applied on the substrate is exposed to a light of about 248.4 nm. The exposed pattern-forming material is developed with an alkaline developing solution. The pattern-forming material contains a compound capable of releasing an acid when exposed to light of about 248.4 nm. The substrate is baked between the exposure and developing steps. The compound capable of releasing the acid is selected from an onium salt and a nitrobenzyl tosylate compound.
摘要翻译： 本发明提供一种用于形成用于暴露于248.4nm的KrF准分子激光器的抗蚀剂图案的方法。 该方法包括提供含有具有重氮基的光敏化合物作为感光基团的图案形成材料，碱溶性聚合物和能够解决光敏化合物和聚合物的溶剂，其中图案形成材料适于 pH4以下，在基板上形成膜。 施加在基板上的图案形成材料暴露于约248.4nm的光。 曝光的图案形成材料用碱性显影液显影。 图案形成材料含有当暴露于约248.4nm的光时能够释放酸的化合物。 在曝光和显影步骤之间烘烤基材。 能够释放酸的化合物选自鎓盐和硝基苄基甲苯磺酸酯化合物。
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公开(公告)号：US20130272913A1
公开(公告)日：2013-10-17
申请号：US13995565
申请日：2011-12-09
IPC分类号： C22C38/54 , C22C38/16 , C22C38/08 , C22C38/14 , C22C38/12 , B21B1/16 , C22C38/42 , C22C38/20 , C22C38/06 , C22C38/04 , C22C38/02 , C22C38/00 , C22C38/50
CPC分类号： C22C38/04 , B21B1/16 , C21D1/74 , C21D8/065 , C21D9/525 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/06 , C22C38/08 , C22C38/12 , C22C38/14 , C22C38/16 , C22C38/20 , C22C38/42 , C22C38/50 , C22C38/54
摘要： This steel wire material contains 0.05%-1.2% C (“%” means “% by mass,” same hereinafter for chemical components.), 0.01%-0.7% Si, 0.1%-1.5% Mn, 0.02% max. P (not including 0%), 0.02% max. S (not including 0%), and 0.005% max. N (not including 0%), with the remainder being iron and unavoidable impurities. The steel wire material has a scale 6.0-20 μm thick and holes of an equivalent circle diameter of 1 μm max. in said scale that occupy 10% by area max. Said scale does not detach in the cooling process after hot rolling or during storage or transportation but can readily detach during mechanical descaling.
摘要翻译： 该钢丝材含有0.05％-1.2％C（“％”表示“质量％”，化学成分相同），0.01％-0.7％Si，0.1％〜1.5％Mn，0.02％以下。 P（不包括0％），最大0.02％。 S（不含0％），最大0.005％。 N（不包括0％），其余为铁和不可避免的杂质。 钢丝材料的厚度为6.0-20μm，当量圆直径为1mum的孔。 按规模占总面积的10％。 所述鳞片在热轧后或在储存或运输期间的冷却过程中不分离，但是在机械除锈时容易分离。
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