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公开(公告)号：US06641861B2
公开(公告)日：2003-11-04
申请号：US09962578
申请日：2001-09-24
IPC分类号： B05D512
CPC分类号： H01L23/3736 , H01L21/4871 , H01L23/142 , H01L23/3732 , H01L23/49562 , H01L2924/0002 , H01L2924/1423 , Y10T428/24942 , Y10T428/24975 , Y10T428/249961 , Y10T428/249967 , Y10T428/249988 , Y10T428/24999 , Y10T428/26 , Y10T428/30 , Y10T428/31678 , H01L2924/00
摘要： A method of fabricating a heatsink including a substrate of a sintered compact containing Cu and W, and a thin diamond film layer formed on the surface of the substrate with good adherence, involves immersing the substrate in acid to reduce the Cu content of a surface region thereof and to roughen exposed W at that surface region, and then forming the thin diamond film layer on that surface region by vapor synthesis. Alternatively, a thin diamond film layer is formed on a surface of a porous body substrate, and then a hole in the porous body substrate is filled with Cu.
摘要翻译： 一种制造包括含有Cu和W的烧结体的衬底的散热体的方法以及形成在衬底表面上的良好粘附性的薄金刚石膜层包括将衬底浸入酸中以降低表面区域的Cu含量 并在该表面区域粗化暴露的W，然后通过气相合成在该表面区域上形成薄金刚石膜层。 或者，在多孔体基板的表面上形成薄金刚石膜层，然后用Cu填充多孔体基板的孔。
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公开(公告)号：US06361857B1
公开(公告)日：2002-03-26
申请号：US09232011
申请日：1999-01-14
IPC分类号： B32B900
CPC分类号： H01L23/3736 , H01L21/4871 , H01L23/142 , H01L23/3732 , H01L23/49562 , H01L2924/0002 , H01L2924/1423 , Y10T428/24942 , Y10T428/24975 , Y10T428/249961 , Y10T428/249967 , Y10T428/249988 , Y10T428/24999 , Y10T428/26 , Y10T428/30 , Y10T428/31678 , H01L2924/00
摘要： A thin diamond film layer is formed on a substrate with good adherence. A heatsink includes a substrate of a sintered compact including Cu and W, and a thin diamond film layer formed on the surface of the substrate. The Cu content in the substrate is at least 5% by weight. In an X-ray diffraction chart obtained by irradiating the thin diamond film layer with an X-ray, the diffraction peak intensity of the (110) plane of W is at least 100 times the diffraction peak intensity of the (200) plane of Cu.
摘要翻译： 在具有良好粘附性的基材上形成薄金刚石膜层。 散热器包括包含Cu和W的烧结体的基板，以及形成在基板的表面上的薄金刚石膜层。 基材中的Cu含量为至少5重量％。 在通过用X射线照射薄金刚石膜层而获得的X射线衍射图中，W的（110）面的衍射峰强度为Cu的（200）面的衍射峰强度的至少100倍 。
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3.发明授权公开(公告)号：US06335863B1
公开(公告)日：2002-01-01
申请号：US09228423
申请日：1999-01-12
IPC分类号： H05K720
CPC分类号： H01L23/49562 , H01L21/4871 , H01L23/142 , H01L23/3732 , H01L2924/0002 , H01L2924/1423 , H01L2924/00
摘要： A low-cost package for semiconductors that is superior in heat dissipation and capable of preventing the cracking of semiconductor elements at the time of mounting, and a semiconductor module employing the package. The package for semiconductors comprises a CVD diamond substrate 22 made of an independent diamond lamina, and a highly heat-conductive metallic member 21 bonded with the substrate. Semiconductor elements such as MMICs are mounted on an area 25 for mounting semiconductor elements. The CVD diamond substrate 22 may be replaced by a composite in which a CVD diamond layer is formed on a base material having thermal conductivity of 100 W/m·K or more. The provision of protuberances 26 of the metallic member 21 around the CVD diamond substrate 22 prevents the leakage of microwaves and millimeter waves.
摘要翻译： 一种半导体的低成本封装，其散热优良并且能够防止在安装时半导体元件的开裂，以及采用该封装的半导体模块。 用于半导体的封装包括由独立的金刚石薄片制成的CVD金刚石基底22和与基底结合的高导热金属部件21。 诸如MMIC的半导体元件安装在用于安装半导体元件的区域25上。 CVD金刚石基板22可以由在其导热率为100W / m·K以上的基材上形成CVD金刚石层的复合体代替。 在CVD金刚石基底22周围设置金属构件21的突起26防止微波和毫米波的泄漏。
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公开(公告)号：US06184611B2
公开(公告)日：2001-02-06
申请号：US09037514
申请日：1998-03-10
IPC分类号： H01J102
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译： 电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。 由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。 优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。
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5.发明授权公开(公告)号：US06267637B1
公开(公告)日：2001-07-31
申请号：US09437092
申请日：1999-11-09
IPC分类号： H01J924
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron-emitting element comprises a diamond substrate, and a diamond protrusion grown on a surface of the diamond substrate so as to have a pointed portion in a form capable of emitting an electron. Since the diamond protrusion formed by growth has a sharply pointed tip portion, it can fully emit electrons. Preferably, the surface of the diamond substrate is a {100} face, and the diamond protrusion is surrounded by {111} faces.
摘要翻译： 电子发射元件包括金刚石衬底和在金刚石衬底的表面上生长的金刚石突起，以便具有能够发射电子的形式的尖端部分。 由于通过生长形成的金刚石突起具有尖锐的尖端部分，所以它可以完全发射电子。 优选地，金刚石基底的表面是{100}面，并且金刚石突起被{111}面包围。
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6.发明授权Method of and apparatus for producing single-crystalline diamond of large size 失效用于生产大尺寸单晶金刚石的方法和设备
公开(公告)号：US6096129A
公开(公告)日：2000-08-01
申请号：US60555
申请日：1998-04-15
CPC分类号： C30B25/02 , C30B25/00 , C30B25/105 , C30B29/04 , Y10S117/902 , Y10S117/913
摘要： An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.
摘要翻译： 由具有主要表面和由低折射率平面组成的侧表面的平板制备初始单晶金刚石基材。 然后，将单晶金刚石同轴异质气相沉积在单晶金刚石基材上，并以特定的方式对所得金刚石材料进行切割和抛光，以提供连续的基材，再次生长单晶金刚石，从而形成 具有大面积的单晶金刚石。 用于单晶金刚石基材的保持器由几乎不与碳形成化合物的材料组成或涂覆。 可以在基材的表面上稳定地形成单晶金刚石。 因此，可以使用等离子体CVD或热丝法在更短的时间内稳定地制造具有大面积的高质量的单晶金刚石。
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公开(公告)号：US20090160307A1
公开(公告)日：2009-06-25
申请号：US12094250
申请日：2007-09-18
CPC分类号： H01J1/3044 , H01J9/025 , H01J37/065 , H01J37/073 , H01J2201/30407 , H01J2201/30411 , H01J2201/30419 , H01J2201/30457 , H01J2237/06341 , H01J2237/26 , H01J2237/3137 , H01J2237/3146 , H01J2237/31749 , H01J2237/3175
摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.
摘要翻译： 一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点 器件，以及金刚石电子源的制造方法。 将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。 通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。
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公开(公告)号：US07524372B2
公开(公告)日：2009-04-28
申请号：US11388970
申请日：2006-03-27
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C30B29/04
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。
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9.发明授权Diamond single crystal substrate manufacturing method and diamond single crystal substrate 有权金刚石单晶衬底制造方法和金刚石单晶衬底公开(公告)号：US07481879B2
公开(公告)日：2009-01-27
申请号：US11032176
申请日：2005-01-11
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
CPC分类号： C30B33/00 , C30B25/20 , C30B29/04 , Y10T428/30
摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
摘要翻译： 一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在 将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。 该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。
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10.发明申请公开(公告)号：US20050139150A1
公开(公告)日：2005-06-30
申请号：US10980152
申请日：2004-11-04
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C01B31/06 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
摘要： A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.
摘要翻译： 一种金刚石单晶复合基板，其由具有均匀平面取向的多个金刚石单晶基板构成，并且通过气相合成在其上生长金刚石单晶整体并入，其中主体的平面取向偏离 从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度，排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度，当金刚石单晶基板并排配置时，所述一个金刚石单晶基板配置在最外周部，并且配置成使得在所述一个的主平面中的<100>方向 衬底在所设置的衬底的外周方向上面对，然后通过气相合成生长金刚石单晶 使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶，以实现整体的整合。
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