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1.发明申请METHOD FOR SIMULTANEOUSLY TENSILE AND COMPRESSIVE STRAINING THE CHANNELS OF NMOS AND PMOS TRANSISTORS RESPECTIVELY 有权方法同时拉伸和压缩应变NMOS和PMOS晶体管的通道公开(公告)号：US20100041205A1
公开(公告)日：2010-02-18
申请号：US12505161
申请日：2009-07-17
IPC分类号： H01L21/762
CPC分类号： H01L29/1054 , H01L21/823807 , H01L21/84
摘要： A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.
摘要翻译： 一种形成微电子器件的方法，包括在相同的支撑件上：根据第一应变应变的至少一个半导体区域和根据与第一应变不同的第二应变应变的至少一个半导体区域，包括 ：在预应变层上形成半导体区，然后在预应变层的厚度上延伸沟槽，半导体区的尺寸和布局作为布局和尺寸的函数 沟槽以获得具有与预应变层相同类型的应变的半导体区域和具有与预应变层的不同类型的应变的半导体区域。
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2.发明授权Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively 有权分别同时拉伸和压缩NMOS和PMOS晶体管的通道的方法公开(公告)号：US07951659B2
公开(公告)日：2011-05-31
申请号：US12505161
申请日：2009-07-17
CPC分类号： H01L29/1054 , H01L21/823807 , H01L21/84
摘要： A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.
摘要翻译： 一种形成微电子器件的方法，包括在相同的支撑件上：根据第一应变应变的至少一个半导体区域和根据与第一应变不同的第二应变应变的至少一个半导体区域，包括 ：在预应变层上形成半导体区，然后在预应变层的厚度上延伸沟槽，半导体区的尺寸和布局作为布局和尺寸的函数 沟槽以获得具有与预应变层相同类型的应变的半导体区域和具有与预应变层的不同类型的应变的半导体区域。
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公开(公告)号：US08236698B2
公开(公告)日：2012-08-07
申请号：US12519356
申请日：2007-12-20
IPC分类号： H01L21/311
CPC分类号： B81C1/00047 , B01L3/5027 , B81B2201/058 , B81B2203/0384
摘要： The invention relates to a method for forming microcavities (118) of different depths in a layer (102) based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer (102) so as to extend through one face (101) thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (101), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (101); and the layer (102) is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities (118).
摘要翻译： 本发明涉及一种基于至少一种非晶或单晶材料形成层（102）中不同深度的微腔（118）的方法，该方法至少包括以下步骤，其中：形成至少一个轴和/或沟槽 在所述层（102）中延伸通过其一个面（101），使得所述轴和/或所述沟槽的两个平行于所述面（101）的不同平面中的两个部分相对于彼此对准 沿着与所述面（101）的平面垂直的非零角度的对准轴线; 并且所述层（102）在氢化气氛中退火，以便将所述轴和/或沟槽转变成至少两个微腔（118）。
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公开(公告)号：US20090124050A1
公开(公告)日：2009-05-14
申请号：US12267431
申请日：2008-11-07
申请人： Erwan Dornel , Jean-Charles Barbe , Thomas Ernst
发明人： Erwan Dornel , Jean-Charles Barbe , Thomas Ernst
IPC分类号： H01L21/335 , H01L21/20
CPC分类号： H01L29/42392 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/125 , H01L29/66439 , H01L29/7613 , H01L29/775 , H01L29/78645 , H01L29/78696
摘要： A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method comprising: the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.
摘要翻译： 一种制造至少一个纳米线的方法，所述纳米线平行于其支撑衬底，所述方法包括：在所述支撑衬底上形成包括棒和两个区域的结构，所述棒的第一端固定到 两个区域和杆的第二端固定到另一个区域，杆的宽度小于区域的宽度，在棒状气体气氛下退火以将棒转变成纳米线 退火在允许控制在纳米线形成期间产生的颈部上浆的条件下进行。
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5.发明申请Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structures 有权用于制造不同的第一和第二有源半导体区的方法及其用于制造C-MOS结构的方法公开(公告)号：US20070105315A1
公开(公告)日：2007-05-10
申请号：US11584635
申请日：2006-10-23
IPC分类号： H01L21/336
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/2022 , H01L21/823807 , H01L21/84 , H01L27/1203
摘要： A method according to the invention enables first and second active zones to be produced on a front face of a support, which said zones are respectively formed by first and second monocrystalline semi-conducting materials that are distinct from one another and preferably have identical crystalline structures. The front faces of the first and second active zones also present the advantage of being in the same plane. Such a method consists in particular in producing the second active zones by a crystallization step of the second semi-conducting material in monocrystalline form, from patterns made of second semi-conducting material in polycrystalline and/or amorphous form and from interface regions between said patterns and preselected first active zones. Moreover, the support is formed by stacking of a substrate and of an electrically insulating thin layer, the front face of the electrically insulating thin layer forming the front face of the support.
摘要翻译： 根据本发明的方法使得能够在支撑体的前表面上产生第一和第二活性区域，所述区域分别由彼此不同的优选具有相同晶体结构的第一和第二单晶半导体材料形成 。 第一和第二活动区域的前表面也具有处于同一平面上的优点。 这种方法特别在于通过第二半导体材料以单晶形式的结晶步骤从多晶和/或无定形形式的第二半导体材料制成的图案和由所述图案之间的界面区域产生第二活性区域 和预选的第一活动区域。 此外，通过堆叠基板和电绝缘薄层形成支撑体，电绝缘薄层的前表面形成支撑体的前表面。
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公开(公告)号：US20100047973A1
公开(公告)日：2010-02-25
申请号：US12520385
申请日：2007-12-20
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/7853 , B82Y10/00 , H01L29/42392 , H01L29/66795 , H01L29/7854 , Y10S977/938
摘要： A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.
摘要翻译： 一种用于在基于单晶或非晶材料的层中形成导线的方法。 该方法在层中形成两个沟槽，穿过该层的一个面，通过蚀刻其上布置有蚀刻掩模的层彼此分离一层该层，并在氢化气氛下退火， 在退火期间，蚀刻掩模保持在该层上。 两个沟槽的部分的深度和宽度以及该部分的部分的宽度使得退火消除了该部分的一部分，然后两个沟槽形成单个沟槽，其中 层的部分的剩余部分形成电线。
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7.发明授权Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon 失效通过横向氧化锚定薄膜的图案以防止去湿现象公开(公告)号：US07510919B2
公开(公告)日：2009-03-31
申请号：US11178337
申请日：2005-07-12
申请人： Jean-Charles Barbe , Maud Vinet , Béatrice Drevet , Carine Jahan
发明人： Jean-Charles Barbe , Maud Vinet , Béatrice Drevet , Carine Jahan
IPC分类号： H01L21/84
CPC分类号： H01L21/78 , H01L21/76205 , H01L21/76281 , H01L21/84 , H01L21/86
摘要： The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of said patterns, lateral oxidized zones are arranged at the periphery of each pattern of the thin film so as to form an anchoring.This anchoring can be achieved by forming an oxide layer over the whole of the thin film and then depositing a nitride layer. Then the nitride and oxide layers and the thin film are patterned and the thin film is laterally oxidized so that each pattern of the thin film comprises, at the periphery thereof, an oxidized zone of predetermined width. The nitride and oxide layers are then removed so as to release the patterns oxidized at their periphery.
摘要翻译： 本发明涉及厚度小于10nm的薄膜，由可氧化半导体材料制成并以图案形式图案化。 为了防止所述图案的去湿现象，横向氧化区被布置在薄膜的每个图案的周边，以形成锚定。 该锚定可以通过在整个薄膜上形成氧化物层然后沉积氮化物层来实现。 然后对氮化物和氧化物层和薄膜进行图案化，并且薄膜被横向氧化，使得薄膜的每个图案在其周围包含预定宽度的氧化区。 然后去除氮化物和氧化物层，以便释放在其周边氧化的图案。
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8.发明申请公开(公告)号：US20060121653A1
公开(公告)日：2006-06-08
申请号：US11291918
申请日：2005-12-02
CPC分类号： H01L21/76202
摘要： A method for insulating patterns formed in a thin film made of a first oxidizable semi-conducting material, with a thickness less than or equal to 20 nm and preferably less than or equal to 10 nm, successively comprises: formation, on the thin film, of a mask defining, in the thin film, free zones and zones covered by the mask designed to substantially form the patterns, selective formation, at the level of the free zones of the thin film, of an additional layer formed by an oxide of a second semi-conducting material, oxidization of the free zones of the thin film, removal of the mask so as to release the thin film patterned in the form of patterns insulated by oxidized zones. The first and second semi-conducting materials can be identical and the step of selective formation of the additional layer can be performed by selective epitaxial growth of the free zones of the thin film.
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公开(公告)号：US20060091105A1
公开(公告)日：2006-05-04
申请号：US11172945
申请日：2005-07-05
申请人： Jean-Charles Barbe , Thomas Ernst
发明人： Jean-Charles Barbe , Thomas Ernst
CPC分类号： H01L29/7849 , H01L21/76275 , H01L21/76289 , H01L29/6659 , H01L29/66772 , H01L29/78654
摘要： The invention relates to a method for straining or deforming a pattern or a thin layer (24), starting from an initial component comprising the said thin layer and a prestressed layer (20), this method comprising: an etching step of the prestressed layer, perpendicular to its surface.
摘要翻译： 本发明涉及一种从包括所述薄层和预应力层（20）的初始部件开始使图案或薄层（24）变形或变形的方法，该方法包括：预应力层的蚀刻步骤， 垂直于其表面。
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公开(公告)号：US08647957B2
公开(公告)日：2014-02-11
申请号：US13464363
申请日：2012-05-04
申请人： Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frederic Leroy , Denis Mariolle , Pierre Muller
发明人： Lukasz Borowik , Jean-Charles Barbe , Ezra Bussmann , Fabien Cheynis , Frederic Leroy , Denis Mariolle , Pierre Muller
IPC分类号： B82Y40/00
CPC分类号： H01L29/7613 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02381 , H01L21/02488 , H01L21/02529 , H01L21/02532 , H01L21/0259 , H01L21/02601 , H01L21/02667 , H01L29/0665 , H01L29/66075
摘要： A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
摘要翻译： 一种制备半导体纳米晶体的方法，至少包括以下步骤：在至少一个电介质层上提供的半导体薄层上形成固体碳化学物质，形成在半导体纳米晶体上的碳化学物质的尺寸和密度 导体薄层是半导体纳米晶体的所需尺寸和密度的函数; 对半导体薄层进行退火，对半导体进行去湿并在电介质层上形成半导体纳米晶体。
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