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    INFORMATION PROCESSING
    2.
    发明申请
    INFORMATION PROCESSING 审中-公开
    信息处理

    公开(公告)号：US20130290892A1

    公开(公告)日：2013-10-31

    申请号：US13457524

    申请日：2012-04-27

    申请人： Santosh S. Basapur ,  Shirley A. Chaysinh ,  Young S. Lee ,  Hiren M. Mandalia ,  Ashley B. Novak ,  Narayanan Venkitaraman

    发明人： Santosh S. Basapur ,  Shirley A. Chaysinh ,  Young S. Lee ,  Hiren M. Mandalia ,  Ashley B. Novak ,  Narayanan Venkitaraman

    IPC分类号： G06F3/048

    CPC分类号： G06F17/30064 ,  G11B27/34 ,  G11B2220/2537 ,  H04N21/4316 ,  H04N21/4722 ,  H04N21/478 ,  H04N21/4882 ,  H04N21/854

    摘要： Disclosed are methods and apparatus for displaying a plurality of presentation elements to a user. A progress bar is displayed. A length of the progress bar is representative of a duration of a multimedia presentation. A communication box is also displayed. The communication box comprises a marker and a communication composed by an originator in relation to a certain point or time period within the multimedia presentation. The progress bar and the communication box are displayed such that the marker is in alignment with a position along the length of the progress bar that corresponds to the point or time period in the multimedia presentation in relation to which the communication was composed. The marker may be moved relative to the progress bar.

    摘要翻译： 公开了用于向用户显示多个呈现元素的方法和装置。 显示进度条。 进度条的长度代表多媒体呈现的持续时间。 还显示一个通讯箱。 通信盒包括与多媒体呈现中的特定点或时间段相关的标记和由发起者组成的通信。 显示进度条和通信盒，使得标记与沿着进度条的长度对应于与组成通信的多媒体呈现中的点或时间段对应的位置对准。 标记可以相对于进度条移动。

    HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT
    5.
    发明申请
    HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT 失效
    使用荧光探针的高密度等离子体吸附沉积 - 沉积沉积工艺

    公开(公告)号：US20100041207A1

    公开(公告)日：2010-02-18

    申请号：US12193162

    申请日：2008-08-18

    申请人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    发明人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

    摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

    摘要翻译： 将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。 该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分， 的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

    Gapfill using deposition-etch sequence
    6.
    发明授权
    Gapfill using deposition-etch sequence 有权
    Gapfill使用沉积蚀刻序列

    公开(公告)号：US07329586B2

    公开(公告)日：2008-02-12

    申请号：US11166357

    申请日：2005-06-24

    申请人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

    发明人： Manoj Vellaikal ,  Hemant P. Mungekar ,  Young S. Lee ,  Yasutoshi Okuno ,  Hiroshi Yuasa

    IPC分类号： H01L21/76

    CPC分类号： H01L21/31612 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274

    摘要： Methods deposit a film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. Flows of first precursor deposition gases are provided to the substrate processing chamber. A first high-density plasma is formed from the flows of first deposition gases to deposit a first portion of the film over the substrate and within the gap with a first deposition process that has simultaneous deposition and sputtering components until after the gap has closed. A sufficient part of the first portion of the film is etched back to reopen the gap. Flows of second precursor deposition gases are provided to the substrate processing chamber. A second high-density plasma is formed from the flows of second precursor deposition gases to deposit a second portion of the film over the substrate and within the reopened gap with a second deposition process that has simultaneous deposition and sputtering components.

    摘要翻译： 方法在设置在基板处理室中的基板上沉积膜。 基板在相邻的凸起表面之间形成间隙。 将第一前体沉积气体的流动提供给基板处理室。 由第一沉积气体流形成第一高密度等离子体，以在第一沉积工艺和第二沉积工艺之后，在第一沉积工艺之后在膜上沉积薄膜的第一部分，直到间隙闭合为止。 将膜的第一部分的足够部分回蚀刻以重新打开间隙。 向基板处理室提供第二前体沉积气体的流动。 第二高密度等离子体由第二前体沉积气体的流形成，以便在具有同时沉积和溅射部件的第二沉积工艺的基础上沉积薄膜的第二部分并且在重新打开的间隙内。

    Silicon oxide gapfill deposition using liquid precursors
    7.
    发明授权
    Silicon oxide gapfill deposition using liquid precursors 失效
    使用液体前体的氧化硅间隙填充沉积

    公开(公告)号：US07087536B2

    公开(公告)日：2006-08-08

    申请号：US10931742

    申请日：2004-09-01

    申请人： Srinivas D. Nemani ,  Young S. Lee

    发明人： Srinivas D. Nemani ,  Young S. Lee

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/0234

    摘要： A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is provided to the substrate processing chamber. A gaseous oxidizer is also flowed to the substrate processing chamber. A deposition plasma is generated inductively from the precursor and the oxidizer in the substrate processing chamber, and the silicon oxide film is deposited over the substrate and within the gap with the deposition plasma.

    摘要翻译： 在设置在基板处理室中的基板上沉积氧化硅膜。 基板在相邻的凸起表面之间形成间隙。 液体Si-C-O-H前体蒸发。 蒸发的液体Si-C-O-H前体的流动被提供到基底处理室。 气态氧化剂也流到衬底处理室。 从衬底处理室中的前体和氧化剂感应地产生沉积等离子体，并且氧化硅膜沉积在衬底上并且与沉积等离子体在间隙内沉积。

    Reinforced corner structure for cloth
    8.
    发明授权
    Reinforced corner structure for cloth 失效
    布的加强角结构

    公开(公告)号：US5424107A

    公开(公告)日：1995-06-13

    申请号：US144441

    申请日：1993-11-02

    申请人： Young S. Lee

    发明人： Young S. Lee

    IPC分类号： B68F1/00 ,  B32B3/10

    CPC分类号： B68F1/00 ,  Y10T428/24008 ,  Y10T428/24322

    摘要： A reinforced corner structure for cloth, especially a tent, capable of enabling the cloth corner to endure the dragging force coming from a cord installed therein and tied at a support and thus prolonging the life of the cloth. This reinforced corner structure comprises upper and lower plates For covering the upper and lower surfaces of the corner and reinforcing this corner. These upper and lower plates are integrally formed by a single injection molding of plastic material each other and each of them is an equilateral trapezoid in figure. This trapezoidal structure is opened at two sides but closed at the two other sides thereof, thereby allowing a cloth corner to be adjusted therein and preventing the corner of cloth from jutting out of the structure after the corner structure is fixed to the corner of cloth.

    摘要翻译： 一种用于布，特别是帐篷的加强的角结构，能够使布角能够忍受来自安装在其中的绳索的牵引力并且被固定在支撑件上，从而延长布的寿命。 这种加强的角结构包括上板和下板用于覆盖角的上表面和下表面并加强该角。 这些上板和下板通过塑料材料的单次注射成型彼此一体地形成，并且它们中的每一个是图中的等边梯形。 该梯形结构在两侧开口但在其两侧封闭，从而允许在其中调整布角，并且在将拐角结构固定在布角的角部之后防止布的角部从结构上突出。

    SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN
    10.
    发明申请
    SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 失效
    选择性抑制含有硅和氮的材料的干燥速率

    公开(公告)号：US20130059440A1

    公开(公告)日：2013-03-07

    申请号：US13449441

    申请日：2012-04-18

    申请人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    发明人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

    摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

    摘要翻译： 描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。