摘要:
A semiconductor device includes a substrate having a cell region and a circuit region, an upper wiring layer on the substrate, and a redistribution wiring layer on the upper wiring layer. The upper wiring layer includes a secondary uppermost wiring in the circuit region and an uppermost wiring on the secondary uppermost wiring. The uppermost wiring includes an uppermost chip pad electrically connected to the secondary uppermost wiring. At least a portion of the uppermost chip pad in the cell region. The redistribution wiring layer includes a redistribution wiring electrically connected to the uppermost chip pad. At least a portion of the redistribution wiring serving as a landing pad connected to an external connector.
摘要:
A delay-locked-loop (DLL) circuit having a DLL that operates when an external clock signal has a low frequency and a DLL that operates when an external clock signal has a high frequency is disclosed. The DLL circuit includes a first DLL and second DLL. The first DLL adjusts a delay time of an external clock signal to generate a first internal clock signal synchronized with the external clock signal when the external clock signal has a low frequency. The second DLL adjusts the delay time of the external clock signal to generate a second internal clock signal synchronized with the external clock signal when the external clock signal has a high frequency.
摘要:
Provided is an apparatus and method for transmitting a push notification message. To this end, connection is performed with a mobile terminal, and if a push notification message is received from a push notification service providing server, the received push notification message is transmitted to the mobile terminal, and when disconnected from the mobile terminal, a push notification message received after the disconnection is stored, such that transmission of the push notification message can be guaranteed.
摘要:
A delay-locked-loop (DLL) circuit having a DLL that operates when an external clock signal has a low frequency and a DLL that operates when an external clock signal has a high frequency is disclosed. The DLL circuit includes a first DLL and second DLL. The first DLL adjusts a delay time of an external clock signal to generate a first internal clock signal synchronized with the external clock signal when the external clock signal has a low frequency. The second DLL adjusts the delay time of the external clock signal to generate a second internal clock signal synchronized with the external clock signal when the external clock signal has a high frequency.
摘要:
A delay locked loop circuit includes: a delay locked loop block receiving an external clock and generating a delay locked internal clock; a duty cycle correcting block connected to the delay locked loop block and correcting the duty cycle of the internal clock; and an error detecting unit comparing the voltages of first and second pumping output nodes of the duty cycle correcting block to detect an operation error of the duty cycle correcting block.
摘要:
A memory system includes a memory controller, a first memory module and second through k-th memory modules. The first memory module is directly coupled to the memory controller without any other memory modules communicatively coupled therebetween, through a first memory bus, and the first memory module exchanges first data with the memory controller.The second through k-th memory modules are coupled to the first memory module with a multi-drop connection through a second memory bus and the second through k-th memory modules exchange second data with the memory controller via the first memory module.
摘要:
In one embodiment, the semiconductor device includes a data control unit configured to selectively process data for writing to a memory. The data control unit is configured to enable a processing function from a group of processing functions based on a mode register command during a write operation, the group of processing functions including at least three processing functions. The enabled processing function may be performed based on a signal received over a single pin associated with the group of processing functions. In another embodiment, the semiconductor device includes a data control unit configured to process data read from a memory. The data control unit is configured to enable a processing function from a group of processing functions based on a mode register command during a read operation. Here, the group of processing functions including at least two processing functions.
摘要:
An output buffer includes first and second input transistors, first and second output loads and a current source. The first and second input transistors have first current electrodes that are commonly coupled to each other and control electrodes that are respectively coupled to a first differential input signal and a second differential input signal. The first and second output loads are coupled between a first power supply voltage and the first and second input transistors, respectively, wherein an output terminal is coupled to a node where the first output load is coupled to the first input transistor. The current source is coupled between the first current electrodes of the first and second input transistors and a second power supply voltage, wherein the second output load has an impedance value substantially one half of an impedance value of the first output load. Therefore, a differential output signal may be outputted through a single output terminal.
摘要:
A chip-on-glass (COG) type liquid crystal display device minimizes a reflected wave from an input terminal of a source driver IC, regardless of the resistance value of a transmission line on a glass substrate, through the use of impedance matching at a front terminal of an LOG and impedance matching at an output terminal of a timing controller, thereby enhancing the frequency characteristic while maintaining a slim and lightweight design, so that it is possible to express a high-resolution high-quality image.
摘要:
A memory module includes a plurality of data ports configured to receive/transmit associated data and a plurality of memory devices. The plurality of memory devices include a first set of the memory devices in at least one rank, each memory device of the first set being coupled to each of the associated data ports, and a second set of the memory devices in at least one other rank, each memory device of the second set being configured to receive/transmit the associated data for the memory device through at least each associated memory device of the first set.