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    MRAM device with continuous MTJ tunnel layers
    2.
    发明授权
    MRAM device with continuous MTJ tunnel layers 失效
    具有连续MTJ隧道层的MRAM器件

    公开(公告)号：US07683447B2

    公开(公告)日：2010-03-23

    申请号：US11854478

    申请日：2007-09-12

    申请人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    发明人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    IPC分类号： H01L29/92

    CPC分类号： B82Y10/00 ,  G11C11/15 ,  H01L27/228

    摘要： A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.

    摘要翻译： 一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

    MRAM Device with Continuous MTJ Tunnel Layers
    3.
    发明申请
    MRAM Device with Continuous MTJ Tunnel Layers 失效
    具有连续MTJ隧道层的MRAM设备

    公开(公告)号：US20090065883A1

    公开(公告)日：2009-03-12

    申请号：US11854478

    申请日：2007-09-12

    申请人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    发明人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： B82Y10/00 ,  G11C11/15 ,  H01L27/228

    摘要： A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.

    摘要翻译： 一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

    Reverse connection MTJ cell for STT MRAM
    9.
    发明授权
    Reverse connection MTJ cell for STT MRAM 有权
    用于STT MRAM的反向连接MTJ单元

    公开(公告)号：US08416600B2

    公开(公告)日：2013-04-09

    申请号：US12626092

    申请日：2009-11-25

    申请人： Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    发明人： Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

    摘要： Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

    摘要翻译： 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。