公开(公告)号：US20120252207A1

公开(公告)日：2012-10-04

申请号：US13174692

申请日：2011-06-30

申请人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

发明人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

IPC分类号： H01L21/283 ,  B82Y40/00

CPC分类号： H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

摘要翻译： 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

公开(公告)号：US08524600B2

公开(公告)日：2013-09-03

申请号：US13174692

申请日：2011-06-30

申请人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

发明人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

IPC分类号： H01L21/283 ,  B82Y40/00

CPC分类号： H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

摘要翻译： 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

公开(公告)号：US20140017408A1

公开(公告)日：2014-01-16

申请号：US13930194

申请日：2013-06-28

申请人： Srinivas Gandikota ,  Xinliang Lu ,  Shih Chung Chen ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Xinyu Fu ,  Yu Lei

发明人： Srinivas Gandikota ,  Xinliang Lu ,  Shih Chung Chen ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  David Thompson ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Xinyu Fu ,  Yu Lei

IPC分类号： C23C18/00

CPC分类号： C23C18/00 ,  C23C16/08 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45553

摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

摘要翻译： 提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。 某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。 其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

公开(公告)号：US20130295759A1

公开(公告)日：2013-11-07

申请号：US13865285

申请日：2013-04-18

申请人： Xinliang Lu ,  Seshadri Ganguli ,  Atif Noori ,  Maitreyee Mahajani ,  Shih Chung Chen ,  Yu Lei ,  Xinyu Fu ,  Wei Tang ,  Srinivas Gandikota

发明人： Xinliang Lu ,  Seshadri Ganguli ,  Atif Noori ,  Maitreyee Mahajani ,  Shih Chung Chen ,  Yu Lei ,  Xinyu Fu ,  Wei Tang ,  Srinivas Gandikota

IPC分类号： H01L29/66

CPC分类号： H01L29/66477 ,  H01L21/28088 ,  H01L21/3221 ,  H01L21/823821 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/78

摘要： Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

摘要翻译： 提供了适用于FinFET结构的金属栅极的方法。 本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。 沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。 可以首先沉积PMOS或NMOS。

公开(公告)号：US20110263115A1

公开(公告)日：2011-10-27

申请号：US13093710

申请日：2011-04-25

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC分类号： H01L21/3205

CPC分类号： H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

摘要翻译： 本发明的实施方案通常提供沉积含金属材料及其组合物的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料 并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和 镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

公开(公告)号：US08642468B2

公开(公告)日：2014-02-04

申请号：US13093710

申请日：2011-04-25

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Yu Lei ,  Xinliang Lu ,  Sang Ho Yu ,  Hoon Kim ,  Paul F. Ma ,  Mei Chang ,  Maitreyee Mahajani ,  Patricia M. Liu

IPC分类号： H01L21/4763

CPC分类号： H01L21/28008 ,  C23C16/06 ,  C23C16/32 ,  C23C16/42 ,  C23C16/45542 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966

摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.

摘要翻译： 本发明的实施方案通常提供沉积含金属材料及其组合物的方法。 所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。 在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料 并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和 镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

公开(公告)号：US08637390B2

公开(公告)日：2014-01-28

申请号：US13116794

申请日：2011-05-26

申请人： Seshadri Ganguli ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Hyoung-Chan Ha ,  Wei Ti Lee ,  Hoon Kim ,  Srinivas Gandikota ,  Yu Lei ,  Kevin Moraes ,  Xianmin Tang

发明人： Seshadri Ganguli ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Hyoung-Chan Ha ,  Wei Ti Lee ,  Hoon Kim ,  Srinivas Gandikota ,  Yu Lei ,  Kevin Moraes ,  Xianmin Tang

IPC分类号： H01L21/4763

CPC分类号： H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L29/49

摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

摘要翻译： 本文提供了金属门结构及其形成方法。 在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层 第二层或第三层形成功函数层，并且其中第三层形成栅电极。

公开(公告)号：US09330939B2

公开(公告)日：2016-05-03

申请号：US13786644

申请日：2013-03-06

申请人： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

发明人： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

IPC分类号： H01L21/76 ,  H01L21/48 ,  H01L21/02 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

摘要翻译： 提供了在半导体器件的接触结构中沉积接触金属层的方法。 在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。 该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。 循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于 沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

公开(公告)号：US20130221445A1

公开(公告)日：2013-08-29

申请号：US13771236

申请日：2013-02-20

申请人： Yu Lei ,  Srinivas Gandikota ,  Xinyu Fu ,  Wei Tang ,  Atif Noori

发明人： Yu Lei ,  Srinivas Gandikota ,  Xinyu Fu ,  Wei Tang ,  Atif Noori

IPC分类号： H01L21/28 ,  H01L29/49

CPC分类号： H01L21/28008 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/517

摘要： Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.

摘要翻译： 提供了利用掺杂有Si，Al，Ga，Ge，In和/或Hf的TiN和/或TaN膜的器件和方法。 这种膜可以用作高k电介质盖层，PMOS功函数层，铝屏障层和/或氟屏障。 TiNN，TaSiN，TiAlN，TaAlN，TiGaN，TaGaN，TiGeN，TaGeN，TiInN，TaInN，TiHfN或TaHfN膜可以用于传统上使用TiN和/或TaN膜的场合，或者它们可以与TiN和/ 或TaN。

公开(公告)号：US08586479B2

公开(公告)日：2013-11-19

申请号：US13356002

申请日：2012-01-23

申请人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

发明人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/0236 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/02057 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/306 ,  H01L21/76814 ,  H01L21/76826

摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.

摘要翻译： 在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。 在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘 其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。