Reagent for rapidly attaining thermal equilibrium in a biological and/or chemical reaction
    1.
    发明申请
    Reagent for rapidly attaining thermal equilibrium in a biological and/or chemical reaction 审中-公开
    用于在生物和/或化学反应中快速获得热平衡的试剂

    公开(公告)号:US20060048607A1

    公开(公告)日:2006-03-09

    申请号:US11129930

    申请日:2005-05-16

    IPC分类号: B22F9/24 C22C5/02

    摘要: The present invention provides a reagent for rapidly attaining thermal equilibrium in a biological and/or chemical reaction, which comprises Au nanoparticles; wherein the Au nanoparticles have a Au metal core covalently bonding to a weak acid functional group, and the Au nanoparticles are aqueous. A method for rapidly attaining thermal equilibrium in a biological and/or chemical reaction and a method for producing the reagent are also provided.

    摘要翻译: 本发明提供了用于在生物和/或化学反应中快速获得热平衡的试剂,其包含Au纳米颗粒; 其中所述Au纳米颗粒具有与弱酸官能团共价结合的Au金属核,并且所述Au纳米颗粒是水性的。 还提供了在生物和/或化学反应中快速获得热平衡的方法和制备试剂的方法。

    Method for isolating active regions in germanium-based MOS device
    8.
    发明授权
    Method for isolating active regions in germanium-based MOS device 有权
    在锗系MOS器件中分离有源区的方法

    公开(公告)号:US09147597B2

    公开(公告)日:2015-09-29

    申请号:US14344050

    申请日:2012-06-14

    摘要: Disclosed herein is a method for isolating active regions in a germanium-based MOS device. A surface of a germanium-based substrate is covered by a thin polysilicon layer or a poly-SiGe layer, and an isolation structure of germanium dioxide covered by a silicon dioxide layer or a SiGe oxide layer on top is formed by means of two steps of oxidation in a case of the active regions are protected. Such two steps of oxidation using the polysilicon layer or the poly-SiGe layer as a sacrificial layer is advantageous to improve the isolation quality of a fabricated germanium dioxide and to reduce a beak effect occurred during a local field oxygen oxidation so as to dramatically elevate the performance of the germanium device.

    摘要翻译: 本文公开了一种用于隔离锗基MOS器件中的有源区的方法。 基于锗的衬底的表面被薄的多晶硅层或多晶硅层覆盖,并且通过两个步骤形成由二氧化硅层或顶部的SiGe氧化物层覆盖的二氧化锗的隔离结构 在活性区域的情况下的氧化被保护。 使用多晶硅层或多晶硅层作为牺牲层的这两个氧化步骤有利于提高制造的二氧化锗的隔离质量,并且减少在局部场氧氧化期间发生的喙效应,从而显着提升 锗器件的性能。

    Heating pump
    9.
    发明授权
    Heating pump 有权
    加热泵

    公开(公告)号:US09145901B2

    公开(公告)日:2015-09-29

    申请号:US13446807

    申请日:2012-04-13

    摘要: A heating pump includes an electric motor, a pump housing fixed to the motor, an impeller driven by the motor, and a ring heater with an inner hole for heating fluid in the pump housing. The pump housing has a pump chamber and a pump inlet and a pump outlet which are in fluid communication with the pump chamber. The impeller is received in the pump housing and having an impeller inlet and a plurality of impeller outlets. The ring heater is disposed inside the pump chamber and between the pump inlet and the impeller. The impeller inlet is in fluid communication with the pump inlet via the inner hole.

    摘要翻译: 加热泵包括电动机,固定到电动机的泵壳体,由电动机驱动的叶轮,以及具有用于加热泵壳体中的流体的内孔的环形加热器。 泵壳体具有与泵室流体连通的泵室和泵入口和泵出口。 叶轮被容纳在泵壳体中并且具有叶轮入口和多个叶轮出口。 环形加热器设置在泵室内部和泵入口与叶轮之间。 叶轮入口通过内孔与泵入口流体连通。

    METHOD FOR ISOLATING ACTIVE REGIONS IN GERMANIUM-BASED MOS DEVICE
    10.
    发明申请
    METHOD FOR ISOLATING ACTIVE REGIONS IN GERMANIUM-BASED MOS DEVICE 有权
    用于在基于锗的MOS器件中隔离有源区的方法

    公开(公告)号:US20150031188A1

    公开(公告)日:2015-01-29

    申请号:US14344050

    申请日:2012-06-14

    IPC分类号: H01L21/762

    摘要: Disclosed herein is a method for isolating active regions in a germanium-based MOS device. A surface of a germanium-based substrate is covered by a thin polysilicon layer or a poly-SiGe layer, and an isolation structure of germanium dioxide covered by a silicon dioxide layer or a SiGe oxide layer on top is formed by means of two steps of oxidation in a case of the active regions are protected. Such two steps of oxidation using the polysilicon layer or the poly-SiGe layer as a sacrificial layer is advantageous to improve the isolation quality of a fabricated germanium dioxide and to reduce a beak effect occurred during a local field oxygen oxidation so as to dramatically elevate the performance of the germanium device.

    摘要翻译: 本文公开了一种用于隔离锗基MOS器件中的有源区的方法。 基于锗的衬底的表面被薄的多晶硅层或多晶硅层覆盖,并且通过两个步骤形成由二氧化硅层或顶部的SiGe氧化物层覆盖的二氧化锗的隔离结构 在活性区域的情况下的氧化被保护。 使用多晶硅层或多晶硅层作为牺牲层的这两个氧化步骤有利于提高制造的二氧化锗的隔离质量,并且减少在局部场氧氧化期间发生的喙效应,从而显着提升 锗器件的性能。