Method of detecting a defect on an object
    1.
    发明申请
    Method of detecting a defect on an object 有权
    检测物体上的缺陷的方法

    公开(公告)号:US20090238445A1

    公开(公告)日:2009-09-24

    申请号:US12383017

    申请日:2009-03-19

    IPC分类号: G06K9/00

    CPC分类号: G06T7/0004 G06T2207/30148

    摘要: In a method of detecting a defect on an object, a preliminary reference image can be obtained from a plurality of comparison regions defined on the object. The preliminary reference image is divided into reference zones by a similar brightness. Each of the reference zones is provided with substantially the same gray level, respectively, to obtain a reference image. Whether a defect exists in an inspection region in the comparison regions is determined using the reference image. Thus, defects in the inspection regions having different brightnesses can be detected using the properly obtained reference image.

    摘要翻译: 在检测物体上的缺陷的方法中,可以从对象上定义的多个比较区域中获得初步参考图像。 初步参考图像以相似的亮度分为参考区域。 每个参考区分别具有基本上相同的灰度级,以获得参考图像。 使用参考图像确定在比较区域中的检查区域中是否存在缺陷。 因此,可以使用适当地获得的参考图像来检测具有不同亮度的检查区域中的缺陷。

    Method of detecting a defect on an object
    2.
    发明授权
    Method of detecting a defect on an object 有权
    检测物体上的缺陷的方法

    公开(公告)号:US08184899B2

    公开(公告)日:2012-05-22

    申请号:US12383017

    申请日:2009-03-19

    IPC分类号: G06K9/00

    CPC分类号: G06T7/0004 G06T2207/30148

    摘要: In a method of detecting a defect on an object, a preliminary reference image can be obtained from a plurality of comparison regions defined on the object. The preliminary reference image is divided into reference zones by a similar brightness. Each of the reference zones is provided with substantially the same gray level, respectively, to obtain a reference image. Whether a defect exists in an inspection region in the comparison regions is determined using the reference image. Thus, defects in the inspection regions having different brightnesses can be detected using the properly obtained reference image.

    摘要翻译: 在检测物体上的缺陷的方法中,可以从对象上定义的多个比较区域中获得初步参考图像。 初步参考图像以相似的亮度分为参考区域。 每个参考区分别具有基本上相同的灰度级,以获得参考图像。 使用参考图像确定在比较区域中的检查区域中是否存在缺陷。 因此,可以使用适当地获得的参考图像来检测具有不同亮度的检查区域中的缺陷。

    Method of analyzing a wafer sample
    3.
    发明授权
    Method of analyzing a wafer sample 失效
    分析晶圆样品的方法

    公开(公告)号:US08050488B2

    公开(公告)日:2011-11-01

    申请号:US12041127

    申请日:2008-03-03

    IPC分类号: G06K9/00

    摘要: In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.

    摘要翻译: 在分析晶片样品的方法中,检测具有用相关曝光条件曝光的拍摄区域的晶片样品上的光致抗蚀剂图案的第一缺陷。 图案的第一部分包括用与参考曝光条件相对应的曝光条件和参考曝光条件的公差误差范围曝光的拍摄区域。 在图案的第二部分中的至少两个拍摄区域中重复存在的第一缺陷被设置为图案的第二缺陷。 获得显示第二缺陷的第一参考图像。 对应于第二缺陷的第一部分中的拍摄区域的第一缺陷被设置为对应于图案的弱点的第三缺陷。 没有弱点的照射区域的曝光条件被设置为曝光处理的曝光余量。

    Method and apparatus for inspecting target defects on a wafer
    5.
    发明授权
    Method and apparatus for inspecting target defects on a wafer 有权
    用于检查晶片上的目标缺陷的方法和装置

    公开(公告)号:US07426031B2

    公开(公告)日:2008-09-16

    申请号:US11461726

    申请日:2006-08-01

    IPC分类号: G01B9/08 G01N21/00

    CPC分类号: G01N21/9501

    摘要: A defect inspecting apparatus includes a first support unit supporting a standard sample having standard defects, a second support unit supporting a wafer having target defects, a light source irradiating an incident light to the standard sample or the wafer, a light receiving part collecting reflection light reflected from the standard sample and the wafer, a detection part detecting the standard defects and the target defects by using the reflection light, a comparing part comparing information obtained using the reflection light reflected from the standard sample with a predetermined standard information of the standard defects to confirm a reliability of a step for detecting the target defects and a determination portion determining whether the step is allowed to be performed or not.

    摘要翻译: 缺陷检查装置包括支撑具有标准缺陷的标准样品的第一支撑单元,支撑具有目标缺陷的晶片的第二支撑单元,向标准样品或晶片照射入射光的光源,收集反射光的光接收部 从标准样品和晶片反射的检测部分,通过使用反射光检测标准缺陷和目标缺陷的检测部分,将使用从标准样品反射的反射光获得的信息与标准缺陷的预定标准信息进行比较的比较部分 以确认用于检测目标缺陷的步骤的可靠性,并且确定部分确定是否允许执行该步骤。

    Method of measuring a surface voltage of an insulating layer
    6.
    发明授权
    Method of measuring a surface voltage of an insulating layer 失效
    测量绝缘层的表面电压的方法

    公开(公告)号:US07394279B2

    公开(公告)日:2008-07-01

    申请号:US11461312

    申请日:2006-07-31

    IPC分类号: G01R31/26 G01R19/00 G01R31/08

    摘要: In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.

    摘要翻译: 在测量绝缘层的表面电压的方法中,在耗尽区中测量表面电压的次数增加,从而可以获得关于耗尽区的精确数据。 在积累区域和反转区域中测量表面电压的次数减少,从而可以快速获得关于耗尽区域的数据。

    Method and apparatus for measuring contamination of a semiconductor substrate
    7.
    发明授权
    Method and apparatus for measuring contamination of a semiconductor substrate 失效
    用于测量半导体衬底的污染物的方法和装置

    公开(公告)号:US06927077B2

    公开(公告)日:2005-08-09

    申请号:US10704753

    申请日:2003-11-12

    CPC分类号: G01R31/303 G01R31/311

    摘要: An apparatus for measuring contamination of a semiconductor substrate includes a chuck for loading a substrate, a position detection means for recognizing a front surface of the loaded substrate to obtain position data of a portion of the substrate to be measured, a first driving part for moving the chuck in accordance with the position data to measure a rear portion of the substrate, and a surface measurement means disposed under the chuck for selectively measuring metal contamination of the substrate at the rear portion of the substrate. In operation, the substrate is loaded onto a chuck, position data of a portion of the substrate to be measured is obtained by recognizing patterns formed on the substrate, the substrate is then moved in accordance with the position data to measure a rear portion of the substrate, and metal contamination is selectively measured at the rear portion of the substrate.

    摘要翻译: 一种用于测量半导体衬底的污染的装置,包括用于装载衬底的卡盘,位置检测装置,用于识别所加载的衬底的前表面,以获得要测量的衬底的一部分的位置数据,用于移动的第一驱动部件 所述卡盘根据位置数据来测量所述基板的后部;以及表面测量装置,设置在所述卡盘下方,用于选择性地测量所述基板的后部处的所述基板的金属污染。 在操作中,将基板装载到卡盘上,通过识别形成在基板上的图案来获得要测量的基板的一部分的位置数据,然后根据位置数据移动基板,以测量基板的后部 衬底和金属污染物在衬底的后部被选择性地测量。

    Apparatus and method for inspecting a surface of a wafer
    9.
    发明授权
    Apparatus and method for inspecting a surface of a wafer 有权
    用于检查晶片表面的装置和方法

    公开(公告)号:US07697130B2

    公开(公告)日:2010-04-13

    申请号:US12368020

    申请日:2009-02-09

    IPC分类号: G01N21/88 G06F19/00

    摘要: A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.

    摘要翻译: 表面检查装置和方法提高晶片生产率,其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率,随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化 表示在连续获取的多个图像上。 当缺陷密度降低时,扫描速度增加,跳跃规则的水平增加,并且当缺陷密度增加时,扫描速度降低,并且跳过规则的水平降低以精确地检测缺陷,从而提高可靠性, 吞吐量和生产力。

    Method of inspecting for defects and apparatus for performing the method
    10.
    发明授权
    Method of inspecting for defects and apparatus for performing the method 有权
    检查缺陷的方法和执行该方法的装置

    公开(公告)号:US07486392B2

    公开(公告)日:2009-02-03

    申请号:US11476651

    申请日:2006-06-29

    IPC分类号: G01N21/00

    CPC分类号: G01N21/9501 G01N21/4738

    摘要: In a method of inspecting an object, a first light is irradiated onto a bare object and a first reflection signal is reflected from the bare object. A second light is irradiated onto a processed object and a second reflection signal is reflected from the processed object. The first and second reflection signals are differentiated, to thereby generate respective first and second differential signals. A defect on the processed object is detected by a comparison between the first and second differential signals. The first and second differential signals overlap with each other and at least one signal-deviation portion is detected. The first and second differential signals are spaced apart out of an allowable error range in the signal-deviation portion. The defect is detected from a portion of the processed object corresponding to the signal-deviation portion.

    摘要翻译: 在检查物体的方法中,将第一光照射到裸物体上,并且从裸物体反射第一反射信号。 将第二光照射到经处理的物体上,并且第二反射信号从被处理物体反射。 第一和第二反射信号被微分,从而产生相应的第一和第二差分信号。 通过第一和第二差分信号之间的比较来检测被处理对象的缺陷。 第一和第二差分信号彼此重叠并且检测至少一个信号偏离部分。 第一和第二差分信号在信号偏差部分的允许误差范围之外是间隔开的。 从对应于信号偏离部分的处理对象的一部分检测缺陷。