公开(公告)号：US08496287B2

公开(公告)日：2013-07-30

申请号：US13242817

申请日：2011-09-23

申请人： Yuji Matsuura ,  Shigeto Yasuhara ,  Kojiro Okabe ,  Ryota Abe ,  Ken Sato

发明人： Yuji Matsuura ,  Shigeto Yasuhara ,  Kojiro Okabe ,  Ryota Abe ,  Ken Sato

IPC分类号： B60R19/34 ,  B62D25/08

CPC分类号： B60R19/34 ,  B62D21/152

摘要： A front vehicle body structure includes, on each of left and right sides, a front side frame, an upper member, a frame connecting member, an impact absorbing mechanism. The impact absorbing mechanism has a closed cross-sectional shape in frontal view of a vehicle. The impact absorbing mechanism includes an external wall and an internal wall. The external wall is substantially straight with respect to an upper internal wall of the upper member such that the frame connecting member is disposed therebetween. The internal wall has a shape in which at least a front portion of the internal wall between a central portion of the internal wall in its longitudinal direction and the bumper beam is obliquely bent outward.

摘要翻译： 前车身结构在左右两侧分别包括前侧框架，上部构件，框架连接构件，冲击吸收机构。 冲击吸收机构在车辆前视图中具有封闭的横截面形状。 冲击吸收机构包括外壁和内壁。 外壁相对于上部构件的上部内壁基本上是直的，使得框架连接构件设置在它们之间。 内壁具有这样的形状，其中在内壁的纵向方向的中心部分和保险杠梁之间的内壁的至少前部部分向外倾斜地弯曲。

公开(公告)号：US20120086225A1

公开(公告)日：2012-04-12

申请号：US13242817

申请日：2011-09-23

申请人： Yuji MATSUURA ,  Shigeto Yasuhara ,  Kojiro Okabe ,  Ryota Abe ,  Ken Sato

发明人： Yuji MATSUURA ,  Shigeto Yasuhara ,  Kojiro Okabe ,  Ryota Abe ,  Ken Sato

IPC分类号： B60R19/26

CPC分类号： B60R19/34 ,  B62D21/152

摘要： A front vehicle body structure includes, on each of left and right sides, a front side frame, an upper member, a frame connecting member, an impact absorbing mechanism. The impact absorbing mechanism has a closed cross-sectional shape in frontal view of a vehicle. The impact absorbing mechanism includes an external wall and an internal wall. The external wall is substantially straight with respect to an upper internal wall of the upper member such that the frame connecting member is disposed therebetween. The internal wall has a shape in which at least a front portion of the internal wall between a central portion of the internal wall in its longitudinal direction and the bumper beam is obliquely bent outward.

摘要翻译： 前车身结构在左右两侧分别包括前侧框架，上部构件，框架连接构件，冲击吸收机构。 冲击吸收机构在车辆前视图中具有封闭的横截面形状。 冲击吸收机构包括外壁和内壁。 外壁相对于上部构件的上部内壁基本上是直的，使得框架连接构件设置在它们之间。 内壁具有这样的形状，其中在内壁的纵向方向的中心部分和保险杠梁之间的内壁的至少前部部分向外倾斜地弯曲。

公开(公告)号：US20140320020A1

公开(公告)日：2014-10-30

申请号：US14354758

申请日：2012-10-26

申请人： Shiro Shirai ,  Ken Sato ,  Hiroyasu Sano

发明人： Shiro Shirai ,  Ken Sato ,  Hiroyasu Sano

IPC分类号： H05B33/08 ,  G05F3/04

CPC分类号： H05B33/0845 ,  G05F3/04 ,  H04B3/54 ,  H04B2203/5412 ,  H04B2203/5458 ,  H05B33/0815 ,  H05B33/0854 ,  H05B37/0263

摘要： A control system includes a load including an operative part, and a control device for supplying AC power to the load through a power line and operating the operative part. The control device includes an interruption mechanism and a transmission mechanism. The load includes a controller. The transmission mechanism transmits a predetermined control signal to the load through the power line by blocking the power supply to the load by the interruption mechanism for a time duration shorter than a half cycle of AC output. The controller controls the operative part based on the control signal received from the control device.

摘要翻译： 控制系统包括一个包括操作部分的负载，以及一个控制装置，用于通过电力线向负载提供交流电力并操作该操作部分。 控制装置包括中断机构和传输机构。 负载包括控制器。 传动机构通过中断机构阻塞对负载的电力供给时间短于交流输出的半周期，通过电力线路向负载发送预定的控制信号。 控制器基于从控制装置接收到的控制信号来控制操作部分。

公开(公告)号：US20100214560A1

公开(公告)日：2010-08-26

申请号：US12602259

申请日：2008-04-25

申请人： Motohiro Yagyu ,  Kenichi Kasai ,  Ken Sato ,  Junsuke Yasui ,  Akira Nagao ,  Tetsuhisa Ishida

发明人： Motohiro Yagyu ,  Kenichi Kasai ,  Ken Sato ,  Junsuke Yasui ,  Akira Nagao ,  Tetsuhisa Ishida

IPC分类号： G01N21/88 ,  G01N1/00

CPC分类号： G01N21/9508 ,  B65G47/1421 ,  B65G47/1492 ,  B65G47/248 ,  B65G2201/027 ,  G01N2021/845

摘要： A test object carrying device for use in an appearance inspection device for checking the appearance of the test objects, which includes a back/front reversal means 23 for turning over the test objects being conveyed by the forward conveying means 21 and supplying them to the returning means 22a; the back/front reversal means is provided with a first drum 231a for rotating and conveying the test objects being conveyed by the forward conveying means 21 while holding the test objects on the peripheral surface thereof, and a second drum 232 for rotating and conveying the test objects being conveyed by the first drum 231a while holding the test objects on the peripheral surface thereof; wherein at least one of the first drum 231a and the second drum 232 is structured so that the test objects are transferred in parallel to the forward conveying means 21 and returning means 22a by rotating and conveying the test objects while holding them on the peripheral surface thereof. This carrying device makes it possible to convey the test objects in such a manner that the appearance of the test objects can be reliable and readily inspected.

摘要翻译： 一种用于外观检查装置的检测对象携带装置，用于检查检查对象的外观，其包括用于翻转正向传送装置21传送的被检查物体的后/后反转装置23，并将其提供给返回 装置22a; 后/前反转装置设置有第一鼓231a，用于在将测试对象保持在其外周表面上的同时旋转和传送由前进输送装置21输送的测试对象;以及第二滚筒232，用于旋转和传送测试 物体由第一滚筒231a传送，同时将测试对象保持在其圆周表面上; 其中，第一滚筒231a和第二滚筒232中的至少一个被构造成使得测试对象在将它们保持在其外周表面的同时旋转并传送测试对象而平行于前进输送装置21和返回装置22a传送 。 该携带装置使得可以以使得测试对象的外观可靠且易于检查的方式传送测试对象。

公开(公告)号：US20090315075A1

公开(公告)日：2009-12-24

申请号：US12471015

申请日：2009-05-22

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/205

CPC分类号： H01L29/0657 ,  H01L29/0661 ,  H01L29/2003 ,  H01L29/7787

摘要： A semiconductor device is, constituted by: a nitride group semiconductor functional layer which includes a first nitride group semiconductor region, a second nitride group semiconductor region provided on the first nitride group semiconductor region by a hetero junction, and a two-dimensional carrier gas channel near the hetero junction of the first nitride group semiconductor region; a first main electrode and a second main electrode connected to the two-dimensional carrier gas channel by ohmic contact; and a gate electrode disposed between the first main electrode and the second main electrode. The nitride group semiconductor region has different thicknesses between the second main electrode and the gate electrode, and between the first main electrode and the gate electrode.

摘要翻译： 半导体器件由以下部分构成：氮化物半导体功能层，其包括第一氮化物半导体区域，通过异质结设置在第一氮化物半导体区域上的第二氮化物半导体区域和二维载气通道 靠近第一氮化物半导体区域的异质结; 通过欧姆接触连接到二维载气通道的第一主电极和第二主电极; 以及设置在第一主电极和第二主电极之间的栅电极。 氮化物半导体区域在第二主电极和栅电极之间以及第一主电极和栅电极之间具有不同的厚度。

公开(公告)号：US20090212326A1

公开(公告)日：2009-08-27

申请号：US12390259

申请日：2009-02-20

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462

摘要： A hetero field effect transistor includes: a first semiconductor layer; a second semiconductor layer formed on the first semiconductor layer to allow a generation of a two dimensional carrier gas layer of a first conductive type on a heterojunction interface between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer formed on the second semiconductor layer and having an impurity introduced therein; a source electrode formed on the third semiconductor layer; a drain electrode formed on the third semiconductor layer and separated from the source electrode; a fourth semiconductor layer formed on or above the second semiconductor layer and has a second conductive type which is different from the first conductive type; and a gate electrode electrically connected on the fourth semiconductor layer. The fourth semiconductor layer is located adjacent to and surrounded by the third semiconductor layer.

摘要翻译： 异场效应晶体管包括：第一半导体层; 形成在所述第一半导体层上以允许在所述第一半导体层和所述第二半导体层之间的异质结界面上产生第一导电类型的二维载气层的第二半导体层; 形成在第二半导体层上并具有引入其中的杂质的第三半导体层; 源极，形成在所述第三半导体层上; 漏极，形成在所述第三半导体层上并与所述源电极分离; 形成在所述第二半导体层上或上方的第四半导体层，并且具有不同于所述第一导电类型的第二导电类型; 以及电连接在第四半导体层上的栅电极。 第四半导体层位于与第三半导体层相邻且被第三半导体层包围的位置。

公开(公告)号：US20080283870A1

公开(公告)日：2008-11-20

申请号：US12117380

申请日：2008-05-08

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/516 ,  H01L29/518

摘要： A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on the main semiconductor region. Between these electrodes, with spacings therefrom, an insulator is provided with is made from a material capable of developing a stress to reduce carrier concentration in neighboring part of the two-dimensional electron gas layer, creating a discontinuity in this layer. A gate electrode overlies the insulator via a piezoelectric layer which is made from a material capable of developing, in response to a voltage applied to the gate electrode, a stress for canceling out the stress developed by the insulator. Thus the device is physically held off by the action of the insulator while no voltage is being impressed to the gate electrode and, upon voltage application thereto, piezoelectrically turns on by the action of the piezoelectric layer. The turn-on resistance of the device is relatively low as the insulator occupies only part of the source-drain spacing.

摘要翻译： HEMT型场效应半导体器件具有包括两层不同材料的主半导体区域，使得沿着两层之间的异质结产生二维电子气层。 源极和漏极放置在主半导体区域上的间隔位置。 在这些电极之间具有间隔的绝缘体上，由能够产生应力的材料制成的绝缘体由此减小二维电子气层的相邻部分中的载流子浓度，从而在该层产生不连续性。 栅电极经由压电层覆盖在绝缘体上，该压电层由能够产生电压的材料制成，该材料响应施加到栅电极的电压而产生用于消除由绝缘体产生的应力的应力。 因此，器件通过绝缘体的作用被物理地保持，而没有电压被施加到栅电极，并且在施加电压时，压电层的作用被压电地导通。 器件的导通电阻相对较低，因为绝缘体仅占源漏间距的一部分。

公开(公告)号：US20080203433A1

公开(公告)日：2008-08-28

申请号：US12038292

申请日：2008-02-27

申请人： Ken Sato

发明人： Ken Sato

IPC分类号： H01L29/43 ,  H01L21/337

CPC分类号： H01L29/66431 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/66462 ,  H01L29/7787

摘要： A high electron mobility transistor includes first, second and third compound semiconductor layers. The second compound semiconductor layer has a first interface with the first compound semiconductor layer. The third compound semiconductor layer is disposed over the first compound semiconductor layer. The third compound semiconductor layer has at least one of lower crystallinity and relaxed crystal structure as compared to the second compound semiconductor layer. The gate electrode is disposed over the third compound semiconductor layer. Source and drain electrodes are disposed over the second compound semiconductor layer. The two-dimensional carrier gas layer is generated in the first compound semiconductor layer. The two-dimensional carrier gas layer is adjacent to the first interface. The two-dimensional carrier gas layer either is absent under the third compound semiconductor layer or is reduced in at least one of thickens and carrier gas concentration under the third compound semiconductor layer.

摘要翻译： 高电子迁移率晶体管包括第一，第二和第三化合物半导体层。 第二化合物半导体层具有与第一化合物半导体层的第一界面。 第三化合物半导体层设置在第一化合物半导体层上。 与第二化合物半导体层相比，第三化合物半导体层具有低结晶度和松弛晶体结构中的至少一个。 栅电极设置在第三化合物半导体层上。 源电极和漏电极设置在第二化合物半导体层上。 在第一化合物半导体层中产生二维载气层。 二维载气层与第一界面相邻。 二维载气层在第三化合物半导体层下面不存在，或者在第三化合物半导体层下的至少一种增稠和载气浓度下降。

公开(公告)号：US09062848B2

公开(公告)日：2015-06-23

申请号：US14116672

申请日：2012-06-08

申请人： Eiichi Sato ,  Ken Sato ,  Hiroyasu Sato

发明人： Eiichi Sato ,  Ken Sato ,  Hiroyasu Sato

IPC分类号： F21V7/00 ,  F21V13/10

CPC分类号： F21V7/0025 ,  F21S8/033 ,  F21S8/04 ,  F21V7/0041 ,  F21V11/14 ,  F21V13/10 ,  F21V17/164 ,  F21Y2103/10 ,  F21Y2103/33 ,  F21Y2115/10

摘要： An illumination device including a light source device includes a light source being constituted by LED(s); a light source side reflective plate to which the light source is fixed; an emission side reflective plate facing the light source side reflective plate; and a fixing means for fixing the both reflective plates, wherein the emission side reflective plate is formed so that a portion thereof facing the light source has the highest optical reflectance and the lowest optical transmittance while the optical reflectance decreases and the optical transmittance increases farther away from the light source, and the distance between the both reflective plates is greatest at a portion where the light source is disposed, while the distance decreases at portions farther away from the portion where the light source is disposed. Thus the device can supply light in a substantially uniform manner from a light irradiation surface.

摘要翻译： 一种包括光源装置的照明装置，包括由LED构成的光源; 固定光源的光源侧反射板; 面向光源侧反射板的发射侧反射板; 以及用于固定两个反射板的固定装置，其中发射侧反射板形成为使得其面向光源的部分具有最高的光学反射率和最低的光透射率，同时光学反射率降低，并且光透射率越来越远 并且两个反射板之间的距离在设置光源的部分处最大，而距离设置有光源的部分更远的部分的距离减小。 因此，该装置可以从光照射表面以基本均匀的方式提供光。

公开(公告)号：US08690380B2

公开(公告)日：2014-04-08

申请号：US13393933

申请日：2010-09-10

申请人： Eiichi Sato ,  Hiroyasu Sato ,  Ken Sato

发明人： Eiichi Sato ,  Hiroyasu Sato ,  Ken Sato

IPC分类号： F21V7/00 ,  F21V21/00

CPC分类号： F21V11/14 ,  F21V7/005 ,  F21V7/22 ,  F21V11/12 ,  F21V13/10 ,  F21Y2103/10 ,  F21Y2115/10 ,  G02B6/0021 ,  G02B6/0025 ,  G02B6/0031 ,  G02B6/0073 ,  G02F1/133603 ,  G02F1/133611

摘要： A surface illumination device includes: a point light source I having high directionality; a linear light conversion unit II that converts light from the point light source into linear light; a linear light diffusion unit III that diffuses the linear light; and a surface lighting unit IV that is irradiated with diffused light and outputs surface light. The light from the point light source I is converted into the linear light by the linear light conversion unit II. The linear light thus converted is diffused in a predetermined direction by the linear light diffusion unit III. The diffused light is radiated on the surface lighting unit IV to be converted into surface light and radiated.

摘要翻译： 表面照明装置包括：具有高方向性的点光源I; 线性光转换单元II，其将来自点光源的光转换为线性光; 线性光漫射单元III，其漫射线性光; 以及照射漫射光并输出面光的表面照明单元IV。 来自点光源I的光被线性光转换单元II转换成线状光。 这样被转换的线状光通过线状光扩散单元III在预定方向上扩散。 漫射光照射在表面照明单元IV上，以转换为表面光并辐射。