公开(公告)号：US20090011605A1

公开(公告)日：2009-01-08

申请号：US12216154

申请日：2008-06-30

申请人： Yuki Chiba ,  Eiichi Nishimura ,  Ryuichi Asako

发明人： Yuki Chiba ,  Eiichi Nishimura ,  Ryuichi Asako

IPC分类号： H01L21/3065

CPC分类号： H01L21/02063 ,  H01J37/32522 ,  H01J2237/2001 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826

摘要： The present invention is an apparatus for manufacturing a semiconductor device comprising: a process vessel including a stage on which a substrate is placed, the substrate having a low dielectric constant film with a resist pattern being formed in an upper layer of the low dielectric constant film; an etching-gas supply unit that supplies an etching gas into the process vessel so as to etch the low dielectric constant film; an ashing-gas unit means that supplies an ashing gas into the process vessel so as to ash the resist pattern formed in the upper layer of the low dielectric constant film after the low dielectric constant film has been subjected to an etching process; a plasma generating means that generates a plasma by supplying an energy to the etching gas and the ashing gas in the process vessel; a unit that supplies a dipivaloylmethane gas into the process vessel, after the low dielectric constant film has been subjected to an ashing process, in order to recover a damage layer of the low dielectric constant film which has been damaged by the plasma; and a heating unit that enables the dipivaloylmethane gas to come into contact with a surface of the substrate under a heated condition.

摘要翻译： 本发明是一种半导体器件的制造装置，其特征在于，包括：处理容器，其具有载置基板的载物台，所述基板具有低介电常数膜，所述低介电常数膜形成在所述低介电常数膜的上层中 ; 蚀刻气体供给单元，其将蚀刻气体供给到所述处理容器中，以蚀刻所述低介电常数膜; 灰化单元意味着在低介电常数薄膜进行了蚀刻处理之后，将灰化气体供给到处理容器中，以使在低介电常数膜的上层形成的抗蚀剂图案灰化; 等离子体产生装置，其通过向处理容器中的蚀刻气体和灰化气体供应能量来产生等离子体; 在低介电常数薄膜已进行灰化处理之后，向该处理容器中供给二过代甲烷气体的单元，以回收已被等离子体损坏的低介电常数膜的损伤层; 以及加热单元，其使得二辛酰甲烷气体在加热条件下与基材的表面接触。

公开(公告)号：US08357615B2

公开(公告)日：2013-01-22

申请号：US12216154

申请日：2008-06-30

申请人： Yuki Chiba ,  Eiichi Nishimura ,  Ryuichi Asako

发明人： Yuki Chiba ,  Eiichi Nishimura ,  Ryuichi Asako

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01L21/02063 ,  H01J37/32522 ,  H01J2237/2001 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826

摘要： The present invention is an apparatus for manufacturing a semiconductor device comprising: a process vessel including a stage on which a substrate is placed, the substrate having a low dielectric constant film with a resist pattern being formed in an upper layer of the low dielectric constant film; an etching-gas supply unit that supplies an etching gas into the process vessel so as to etch the low dielectric constant film; an ashing-gas unit means that supplies an ashing gas into the process vessel so as to ash the resist pattern formed in the upper layer of the low dielectric constant film after the low dielectric constant film has been subjected to an etching process; a plasma generating means that generates a plasma by supplying an energy to the etching gas and the ashing gas in the process vessel; a unit that supplies a dipivaloylmethane gas into the process vessel, after the low dielectric constant film has been subjected to an ashing process, in order to recover a damage layer of the low dielectric constant film which has been damaged by the plasma; and a heating unit that enables the dipivaloylmethane gas to come into contact with a surface of the substrate under a heated condition.

公开(公告)号：US20080194115A1

公开(公告)日：2008-08-14

申请号：US12025359

申请日：2008-02-04

申请人： Kazuhiro KUBOTA ,  Naotsugu Hoshi ,  Yuki Chiba ,  Ryuichi Asako

发明人： Kazuhiro KUBOTA ,  Naotsugu Hoshi ,  Yuki Chiba ,  Ryuichi Asako

IPC分类号： H01L21/469

CPC分类号： H01L21/76802 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76835

摘要： A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.

摘要翻译： 处理方法包括在待处理的目标基板被加载到处理室中之后提供到处理室中的具有Si-CH 3键的气体; 和在靶基质上进行的甲硅烷基化处理。 通过供给具有Si-CH 3键的气体和气体供给时间，室的内部压力被设定在能够进行甲硅烷化处理的范围内，同时， 室降低到合格的压力水平，其中通过气体的供应将室的内部压力增加到预定压力之后可以卸载晶片。

公开(公告)号：US07799703B2

公开(公告)日：2010-09-21

申请号：US12025359

申请日：2008-02-04

申请人： Kazuhiro Kubota ,  Naotsugu Hoshi ,  Yuki Chiba ,  Ryuichi Asako

发明人： Kazuhiro Kubota ,  Naotsugu Hoshi ,  Yuki Chiba ,  Ryuichi Asako

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/76802 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76835

摘要： A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.

摘要翻译： 处理方法包括将待处理的目标基板装载到处理室中之后，将具有Si-CH3键的气体供应到处理室中; 和在靶基质上进行的甲硅烷基化处理。 通过供给具有Si-CH3键的气体和气体供给时间的室的内部压力被设定在可以进行甲硅烷化处理的范围内，同时室的内部压力降低到达到合格压力 在通过气体的供应将腔室的内部压力增加到预定压力之后可以卸载晶片的水平面。

公开(公告)号：US20120034779A1

公开(公告)日：2012-02-09

申请号：US13276894

申请日：2011-10-19

申请人： Satoru SHIMURA ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

发明人： Satoru SHIMURA ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

IPC分类号： H01L21/308

CPC分类号： H01L21/76831 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826

摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.

摘要翻译： 在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。 然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。 然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。 然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。

公开(公告)号：US20050042388A1

公开(公告)日：2005-02-24

申请号：US10727038

申请日：2003-12-04

申请人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

发明人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

IPC分类号： H01L21/283 ,  B05D1/00 ,  B05D3/06 ,  H01L21/3105 ,  H01L21/312 ,  B05D3/00

CPC分类号： H01L21/02137 ,  B05D1/005 ,  B05D3/068 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3124

摘要： A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or an film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.

摘要翻译： 根据本发明的加工方法涂覆极性液膜或在形成在基板上的有机膜的表面上形成无机膜作为保护膜。 该处理方法包括通过在稀有气体气氛中通过电子束照射装置用电子束照射有机膜来固化有机膜的修改步骤，以及将极性液体施加到改性表面的涂布步骤 有机膜或在有机膜上形成无机膜的成膜步骤。 固化有机薄膜，赋予极性液体或无机薄膜亲和性。

公开(公告)号：US08075730B2

公开(公告)日：2011-12-13

申请号：US11631387

申请日：2005-06-29

申请人： Satoru Shimura ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

发明人： Satoru Shimura ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/76831 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826

摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.

摘要翻译： 在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。 然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。 然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。 然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。

公开(公告)号：US20110120650A1

公开(公告)日：2011-05-26

申请号：US13019809

申请日：2011-02-02

申请人： Ryuichi Asako ,  Kaoru Maekawa ,  Yasushi Fujii

发明人： Ryuichi Asako ,  Kaoru Maekawa ,  Yasushi Fujii

IPC分类号： C23F1/08 ,  B08B13/00

CPC分类号： H01L21/76808 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76826

摘要： A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groove or hole in the etching target film; removing the etching mask by a process including at least a process using an ozone-containing gas; and recovering damage of the etching target film caused before or in said removing the etching mask, while supplying a predetermined recovery gas.

摘要翻译： 半导体器件制造方法包括：在设置在半导体衬底上的蚀刻靶膜的表面上形成具有预定电路图案的蚀刻掩模; 通过蚀刻掩模蚀刻蚀刻目标膜，以在蚀刻靶膜中形成凹槽或孔; 通过包括至少使用含臭氧气体的方法的方法去除蚀刻掩模; 并且在提供预定的回收气体的同时恢复在蚀刻掩模去除之前或之中引起的蚀刻目标膜的损伤。

公开(公告)号：US20080057728A1

公开(公告)日：2008-03-06

申请号：US11631387

申请日：2005-06-29

申请人： Satoru Shimura ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

发明人： Satoru Shimura ,  Kazuhiro Kubota ,  Ryuichi Asako ,  Seiichi Takayama

IPC分类号： H01L21/461

CPC分类号： H01L21/76831 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826

摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.

摘要翻译： 在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。 然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。 然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。 然后，在作为第二处理室内的蚀刻对象膜（74）的露出部分的槽或孔（78a）的侧面上进行甲硅烷化处理。

公开(公告)号：US08268721B2

公开(公告)日：2012-09-18

申请号：US13171619

申请日：2011-06-29

申请人： Ryuichi Asako

发明人： Ryuichi Asako

IPC分类号： H01L21/4763

CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76831

摘要： There are provided a semiconductor device and a semiconductor device manufacturing method capable of preventing electrical leakage while suppressing increase of wiring resistance and deterioration of productivity. The semiconductor device manufacturing method for forming on a substrate a semiconductor device having a porous low-k film serving as an interlayer insulating film. Further, the semiconductor device manufacturing method includes forming the low-k film on the substrate; etching the low-k film to form a trench or a hole therein; reforming a surface of the low-k film exposed by etching the low-k film by allowing plasma of a nitro compound to act on the exposed surface within the trench or the hole; and filling the trench or the hole with a conductor.

摘要翻译： 提供了一种能够在抑制布线电阻增加和生产率恶化的同时防止漏电的半导体器件和半导体器件制造方法。 一种用于在基板上形成具有用作层间绝缘膜的多孔低k膜的半导体器件的半导体器件制造方法。 此外，半导体器件制造方法包括在衬底上形成低k膜; 蚀刻低k膜以在其中形成沟槽或孔; 通过使硝基化合物的等离子体作用在沟槽或孔内的暴露表面上来对通过蚀刻低k膜的低k膜暴露的表面进行重整; 并用导体填充沟槽或孔。