公开(公告)号：US07521098B2

公开(公告)日：2009-04-21

申请号：US10727038

申请日：2003-12-04

申请人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

发明人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

IPC分类号： H05B7/00 ,  B05D3/06 ,  C23C14/30

CPC分类号： H01L21/02137 ,  B05D1/005 ,  B05D3/068 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3124

摘要： A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or a film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.

摘要翻译： 根据本发明的加工方法涂覆极性液膜或在形成在基板上的有机膜的表面上形成无机膜作为保护膜。 该处理方法包括通过在稀有气体气氛中通过电子束照射装置用电子束照射有机膜来固化有机膜的修改步骤，以及将极性液体施加到改性表面的涂布步骤 有机膜或在有机膜上形成无机膜的成膜步骤。 固化有机薄膜，赋予极性液体或无机薄膜亲和性。

公开(公告)号：US20050042388A1

公开(公告)日：2005-02-24

申请号：US10727038

申请日：2003-12-04

申请人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

发明人： Kazuyuki Mitsuoka ,  Tadashi Onishi ,  Minoru Honda ,  Ryuichi Asako ,  Mitsuaki Iwashita

IPC分类号： H01L21/283 ,  B05D1/00 ,  B05D3/06 ,  H01L21/3105 ,  H01L21/312 ,  B05D3/00

CPC分类号： H01L21/02137 ,  B05D1/005 ,  B05D3/068 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3124

摘要： A processing method according to the present invention coats a polar liquid film or forms an inorganic film on a surface of an organic film formed on a substrate as a protective film. The processing method comprises a modifying step of curing an organic film by irradiating the organic film with electron beams by means of an electron-beam irradiation device in a rare gas atmosphere, and an applying step of applying a polar liquid to the modified surface of the organic film or an film forming step of forming an inorganic film on the organic film. The organic film is cured and affinity for the polar liquid or the inorganic film is imparted to the organic film.

摘要翻译： 根据本发明的加工方法涂覆极性液膜或在形成在基板上的有机膜的表面上形成无机膜作为保护膜。 该处理方法包括通过在稀有气体气氛中通过电子束照射装置用电子束照射有机膜来固化有机膜的修改步骤，以及将极性液体施加到改性表面的涂布步骤 有机膜或在有机膜上形成无机膜的成膜步骤。 固化有机薄膜，赋予极性液体或无机薄膜亲和性。

公开(公告)号：US07195936B2

公开(公告)日：2007-03-27

申请号：US10745520

申请日：2003-12-29

申请人： Tadashi Onishi ,  Manabu Hama ,  Minoru Honda ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita

发明人： Tadashi Onishi ,  Manabu Hama ,  Minoru Honda ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita

IPC分类号： H01L21/00

CPC分类号： H01L21/02351 ,  C23C16/56 ,  H01J37/317 ,  H01J2237/004 ,  H01J2237/3156 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/2636 ,  H01L21/312 ,  H01L21/67069 ,  H01L21/67253

摘要： In a thin film processing method and system, a film thickness is regulated by using electron beams irradiated from a plurality of electron beam tubes onto a film of varying thickness formed on an object to be processed, wherein the output powers or beam irradiation times of the electron beam tubes are individually controlled according to a distribution of the thickness. In the method and system, electric charges charged in a film of an object to be processed can be removed also.

摘要翻译： 在薄膜处理方法和系统中，通过使用从多个电子束管照射的电子束到形成在待处理物体上的变化的膜的膜来调节膜厚度，其中输出功率或光束照射时间 电子束管根据厚度的分布单独控制。 在该方法和系统中，也可以去除装入被处理物体的膜中的电荷。

公开(公告)号：US08168377B2

公开(公告)日：2012-05-01

申请号：US12391679

申请日：2009-02-24

申请人： Kazuyuki Mitsuoka ,  Makoto Muramatsu ,  Mitsuaki Iwashita

发明人： Kazuyuki Mitsuoka ,  Makoto Muramatsu ,  Mitsuaki Iwashita

IPC分类号： G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  B05D3/10 ,  B06D5/12 ,  H01L21/308

CPC分类号： H01L21/316 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122

摘要： The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent.

摘要翻译： 图案形成方法包括在具有不平坦表面的基底层上形成催化剂膜，其中催化剂层沿着基底层的不平坦表面形成; 通过在催化剂膜上涂布流体材料形成涂膜; 通过使涂膜沿催化剂膜反应，形成不溶于涂膜的溶剂的不溶层; 并通过使用溶剂除去未涂覆的膜的未反应部分来维持不溶层。

公开(公告)号：US08771429B2

公开(公告)日：2014-07-08

申请号：US13420870

申请日：2012-03-15

申请人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan Ji ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B7/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US08372212B2

公开(公告)日：2013-02-12

申请号：US13369970

申请日：2012-02-09

申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B3/04

CPC分类号： F26B3/02

摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。

公开(公告)号：US10199240B2

公开(公告)日：2019-02-05

申请号：US13482318

申请日：2012-05-29

申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

IPC分类号： H01L21/67 ,  H01L21/02 ,  B08B7/00

摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

公开(公告)号：US08465596B2

公开(公告)日：2013-06-18

申请号：US13039361

申请日：2011-03-03

申请人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Hidekazu Okamoto ,  Hideo Namatsu

发明人： Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Hidekazu Okamoto ,  Hideo Namatsu

IPC分类号： B08B5/00

CPC分类号： B08B5/00 ,  B08B13/00

摘要： Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

摘要翻译： 公开了一种超临界处理装置和超临界处理方法，用于抑制图案坍塌或将构成处理液的材料注入基板。 处理室接受用超临界流体处理的基板，液体供给单元向处理室供给包含氟化合物的处理液。 液体排出单元从处理室排出超临界流体，热解成分除去单元去除促进来自处理室的液体的热分解或从液体供应单元供应的液体的热分解，加热单元加热处理 包括氟氟醚或氢氟碳的氟化合物的液体。

公开(公告)号：US20130019905A1

公开(公告)日：2013-01-24

申请号：US13420870

申请日：2012-03-15

申请人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B3/10 ,  F26B3/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20120304485A1

公开(公告)日：2012-12-06

申请号：US13482318

申请日：2012-05-29

申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

IPC分类号： F26B7/00

CPC分类号： H01L21/67028 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101

摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

摘要翻译： 一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。 基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷， 将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。