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公开(公告)号：US08075730B2
公开(公告)日：2011-12-13
申请号：US11631387
申请日：2005-06-29
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/67167 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76826
摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.
摘要翻译： 在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。 然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。 然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。 然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。
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公开(公告)号：US20080057728A1
公开(公告)日：2008-03-06
申请号：US11631387
申请日：2005-06-29
IPC分类号： H01L21/461
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/67167 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76826
摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.
摘要翻译： 在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。 然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。 然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。 然后，在作为第二处理室内的蚀刻对象膜（74）的露出部分的槽或孔（78a）的侧面上进行甲硅烷化处理。
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公开(公告)号：US20120034779A1
公开(公告)日：2012-02-09
申请号：US13276894
申请日：2011-10-19
IPC分类号： H01L21/308
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/67167 , H01L21/67178 , H01L21/67207 , H01L21/76808 , H01L21/76811 , H01L21/76814 , H01L21/76826
摘要： In a semiconductor device manufacturing method, an etching mask (75b) having a predetermined opening pattern is formed on an etching target film (74) disposed on a target object. Then, an etching process is performed on the etching target film (74) through the opening pattern of the etching mask (75b) within a first process chamber, thereby forming a groove or hole (78a) in the etching target film. Then, the target object treated by the etching process is transferred from the first process chamber to a second process chamber, within a vacuum atmosphere. Then, a silylation process is performed on a side surface of the groove or hole (78a), which is an exposed portion of the etching target film (74), within the second process chamber.
摘要翻译： 在半导体器件制造方法中，在设置在目标物体上的蚀刻靶膜（74）上形成具有规定的开口图案的蚀刻掩模（75b）。 然后，通过第一处理室内的蚀刻掩模（75b）的开口图案对蚀刻目标膜（74）进行蚀刻处理，从而在蚀刻目标膜中形成凹槽或孔（78a）。 然后，通过蚀刻处理处理的目标物体在真空气氛中从第一处理室转移到第二处理室。 然后，在第二处理室内，作为蚀刻对象膜（74）的露出部的槽（78a）的侧面进行甲硅烷化处理。
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公开(公告)号：US07799703B2
公开(公告)日：2010-09-21
申请号：US12025359
申请日：2008-02-04
申请人： Kazuhiro Kubota , Naotsugu Hoshi , Yuki Chiba , Ryuichi Asako
发明人： Kazuhiro Kubota , Naotsugu Hoshi , Yuki Chiba , Ryuichi Asako
IPC分类号： H01L21/31 , H01L21/469 , H01L21/4763
CPC分类号： H01L21/76802 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76835
摘要： A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.
摘要翻译： 处理方法包括将待处理的目标基板装载到处理室中之后，将具有Si-CH3键的气体供应到处理室中; 和在靶基质上进行的甲硅烷基化处理。 通过供给具有Si-CH3键的气体和气体供给时间的室的内部压力被设定在可以进行甲硅烷化处理的范围内，同时室的内部压力降低到达到合格压力 在通过气体的供应将腔室的内部压力增加到预定压力之后可以卸载晶片的水平面。
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公开(公告)号：US09048178B2
公开(公告)日：2015-06-02
申请号：US14346986
申请日：2012-09-25
IPC分类号： H01L21/302 , H01L21/66 , H01J37/32 , H01L21/311 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32449 , H01J37/32724 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76811 , H01L21/76813 , H01L21/76877 , H01L22/26 , H01L2221/1015 , H01L2924/0002 , H01L2924/00
摘要： A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate.
摘要翻译： 提供了一种等离子体蚀刻方法，用于在包括用于调节向衬底提供蚀刻气体的供应条件的供应条件调节单元的蚀刻装置内蚀刻对应于蚀刻对象的衬底，温度调节单元，用于调节衬底的温度 放置在沿径向的台面上，以及等离子体产生单元，用于在供应条件调节单元和台之间的空间内产生等离子体。 等离子体蚀刻方法包括：控制步骤，其中温度调节单元控制衬底的温度在衬底的衬底平面内均匀;以及调节步骤，其中供应条件调节单元调节所含活性物质的浓度分布 在等离子体产生单元产生的等离子体中，在衬底上方的空间内。
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6.发明授权Method for detecting an end point of resist peeling, method and apparatus for peeling resist, and computer-readable storage medium 有权用于检测抗蚀剂剥离终点的方法，用于剥离抗蚀剂的方法和装置以及计算机可读存储介质公开(公告)号：US08021564B2
公开(公告)日：2011-09-20
申请号：US11868045
申请日：2007-10-05
申请人： Isamu Sakuragi , Kazuhiro Kubota
发明人： Isamu Sakuragi , Kazuhiro Kubota
IPC分类号： G01L21/30
CPC分类号： H01L21/31138 , G03F7/42 , G03F7/427 , H01J37/32963 , H01L22/26 , H01L2924/0002 , Y10T156/1105 , Y10T156/1906 , H01L2924/00
摘要： A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the produced hydrogen radicals with a resist on a substrate, includes monitoring one or more parameters indicating a state of the catalyst and detecting the end point of the resist peeling process based on variations of the monitored parameters. The hydrogen-containing gas may be a H2 gas. The parameters indicating the state of the catalyst may be one or more electrical parameters when a power is supplied to the catalyst. Further, the catalyst may be a filament made of a high melting point metal.
摘要翻译： 一种用于检测抗蚀剂剥离过程的终点的方法，其中通过催化裂化反应在其中含氢气体与高温催化剂接触的同时通过产生氢自由基来将抗蚀剂气化以被剥离，并使所产生的氢原子 在基板上具有抗蚀剂，包括监测指示催化剂状态的一个或多个参数，并且基于监测参数的变化检测抗蚀剂剥离过程的终点。 含氢气体可以是H 2气体。 指示催化剂状态的参数可以是当向催化剂供电时的一个或多个电参数。 此外，催化剂可以是由高熔点金属制成的长丝。
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7.发明授权Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator 有权用于磁控管等离子体的磁场发生器，以及包括磁场发生器的等离子体蚀刻装置和方法公开(公告)号：US07922865B2
公开(公告)日：2011-04-12
申请号：US10362879
申请日：2001-08-28
申请人： Koji Miyata , Jun Hirose , Akira Kodashima , Shigeki Tozawa , Kazuhiro Kubota , Yuki Chiba
发明人： Koji Miyata , Jun Hirose , Akira Kodashima , Shigeki Tozawa , Kazuhiro Kubota , Yuki Chiba
IPC分类号： H01L21/306
CPC分类号： H01J37/3266 , H01J37/3408
摘要： In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.
摘要翻译： 在用于磁控管等离子体生成的磁场发生器中，其包括具有以环状布置的多个柱状各向异性区段磁体的偶极环磁体，或者在利用磁场发生器的蚀刻装置和方法中， 通过控制相对于进行诸如蚀刻等离子体处理的晶片（工件）的工作表面的磁场方向来改善晶片（工件）整个表面上的等离子体处理的均匀性。
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8.发明申请SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING SYSTEM, AND COMPUTER-READABLE STORAGE MEDIUM 有权基板处理方法，基板处理系统和计算机可读存储介质公开(公告)号：US20090014414A1
公开(公告)日：2009-01-15
申请号：US11870641
申请日：2007-10-11
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/31058 , H01L21/76814 , H01L21/76831
摘要： A substrate processing method includes preparing a substrate having a low-k interlayer dielectric film as a to-be-etched film and a photoresist film, formed on the low-k interlayer insulating film, serving as an etching mask with a predetermined circuit pattern; etching the low-k interlayer insulating film through the photoresist film to form grooves and/or holes in the low-k interlayer insulating film; ashing the photoresist film by using hydrogen radicals generated by bring a hydrogen-containing gas into contact with a catalyst of a high temperature; and recovering damage to the low-k interlayer insulating film due to the ashing by supplying a specific recovery gas. The method further includes recovering damage to the low-k interlayer insulating film due to the etching by supplying a specific recovery gas.
摘要翻译： 基板处理方法包括：在低k层间绝缘膜上形成具有预定电路图案的蚀刻掩模的低k层间绝缘膜作为被蚀刻膜和光致抗蚀剂膜的基板; 通过光致抗蚀剂膜蚀刻低k层间绝缘膜，以在低k层间绝缘膜中形成凹槽和/或孔; 使用通过使含氢气体与高温催化剂接触而产生的氢自由基来使光致抗蚀剂膜发生灰化; 并且通过供给特定的回收气体，由于灰化而恢复对低k层间绝缘膜的损坏。 该方法还包括通过提供特定的回收气体来回收由于蚀刻而导致的低k层间绝缘膜的损坏。
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公开(公告)号：US20060223317A1
公开(公告)日：2006-10-05
申请号：US11374124
申请日：2006-03-14
申请人： Masaru Hori , Kazuhiro Kubota
发明人： Masaru Hori , Kazuhiro Kubota
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32192 , H01J37/32935 , H01L21/02126 , H01L21/3122 , H01L21/31633
摘要： The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas containing an O2 gas, wherein the plasma has an O2+ ion density not lower than 1×1011 cm−3 and an oxygen radical density not higher than 1×1014 cm−3.
摘要翻译： 等离子体处理方法包括通过用含有O 2气体的处理气体的等离子体处理来除去形成图案化SiOCH系膜的上层的有机材料膜的步骤，其中等离子体 具有不低于1×10 11 cm -3的O 2 O 2 + + / O 2离子密度，氧自由基密度不高 超过1×10 14 cm -3。
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公开(公告)号：US06901678B2
公开(公告)日：2005-06-07
申请号：US10855965
申请日：2004-05-28
申请人： Kazuhiro Kubota
发明人： Kazuhiro Kubota
摘要： A measuring head is provided with a retracting device for a sensing pin, comprising an electric motor-driven feed screw, a nut shifted by the feed screw and an inclined face formed on the nut; a seesaw member to which the sensing pin is fitted is swung by the linear motion of the inclined face to retract the sensing pin; not only can the retracting speed and the returning speed of the sensing pin be controlled as desired but also can the retracting action of the sensing pin be stopped on the way to make possible its fine positioning. Further, the electric motor may be provided with a manual knob, and the sensing pin would be thereby enabled to be manually retracted.
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