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1.发明申请公开(公告)号：US20050182574A1
公开(公告)日：2005-08-18
申请号：US11055382
申请日：2005-02-09
申请人： Yukihiro Sano , Yukihiro Takeuchi , Yositugu Abe
发明人： Yukihiro Sano , Yukihiro Takeuchi , Yositugu Abe
CPC分类号： G01N33/005
摘要： A method of detecting hydrogen concentration, while maintaining high precision, is provided. The method of detecting the hydrogen concentration by using a first heat-generating resistor of which a first electrophysical quantity varies depending upon the hydrogen concentration and a second heat-generating resistor which is neighboring said first heat-generating resistor in a direction of gas flow and of which a second electrophysical quantity varies depending upon the hydrogen concentration as does the first electrophysical quantity, to detect the concentration of hydrogen based on the first electrophysical quantity and the second electrophysical quantity, the method comprising a step (S3) of calculating the amount of change in a target physical quantity, which is either the first electrophysical quantity or the second electrophysical quantity, a step (S5) of calculating the correction amount based on a difference between the first electrophysical quantity and the second electrophysical quantity, and a step (S7) of calculating the concentration of hydrogen based on a difference between the amount of change in the target physical quantity and the correction amount.
摘要翻译： 提供了一种在保持高精度的同时检测氢浓度的方法。 通过使用其第一电生理量根据氢浓度而变化的第一发热电阻器和与气体流动方向相邻的所述第一发热电阻器的第二发热电阻器来检测氢浓度的方法，以及 其中第二电物量根据第一电化学数量的氢浓度而变化，以基于第一电物量和第二电物量检测氢的浓度，该方法包括计算量的步骤（S 3） 作为第一电物量或第二电物量的目标物理量的变化，基于第一电物量与第二电物量之间的差计算校正量的步骤（S 5），以及步骤 （S 7）基于差异计算氢的浓度 目标物理量的变化量与校正量之间的差异。
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2.发明授权公开(公告)号：US07158895B2
公开(公告)日：2007-01-02
申请号：US11055382
申请日：2005-02-10
申请人： Yukihiro Sano , Yukihiro Takeuchi , Yositugu Abe
发明人： Yukihiro Sano , Yukihiro Takeuchi , Yositugu Abe
IPC分类号： G01N27/18
CPC分类号： G01N33/005
摘要： The method of detecting the hydrogen concentration by using a first heat-generating resistor of which a first electrophysical quantity varies depending upon the hydrogen concentration and a second heat-generating resistor which is neighboring said first heat-generating resistor in a direction of gas flow and of which a second electrophysical quantity varies depending upon the hydrogen concentration as does the first electrophysical quantity, to detect the concentration of hydrogen based on the first electrophysical quantity and the second electrophysical quantity, the method comprising: calculating the amount of change in a target physical quantity, which is either the first electrophysical quantity or the second electrophysical quantity, calculating the correction amount based on a difference between the first electrophysical quantity and the second electrophysical quantity, and a calculating the concentration of hydrogen based on a difference between the amount of change in the target physical quantity and the correction amount.
摘要翻译： 通过使用其第一电生理量根据氢浓度而变化的第一发热电阻器和与气体流动方向相邻的所述第一发热电阻器的第二发热电阻器来检测氢浓度的方法，以及 其中第二电物量根据第一电化学量的氢浓度而变化，以基于第一电物量和第二电物量来检测氢的浓度，所述方法包括：计算目标物理变化的量 数量，其是第一电物量或第二电物质量，基于第一电物量与第二电物量之间的差计算校正量，并且基于变化量之间的差计算氢浓度 在targe t物理量和校正量。
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公开(公告)号：US20110227040A1
公开(公告)日：2011-09-22
申请号：US13043842
申请日：2011-03-09
申请人： Takao IWAKI , Hiroyuki Wado , Yukihiro Takeuchi
发明人： Takao IWAKI , Hiroyuki Wado , Yukihiro Takeuchi
摘要： A temperature sensor includes a semiconductor substrate and a quantum well structural part disposed on the semiconductor substrate. The semiconductor substrate is made of a plurality of elements. The quantum well structural part has a resistance value that changes with temperature. The quantum well structural part includes a plurality of semiconductor layers made of the elements. The semiconductor layers include a plurality of quantum barrier layers and a quantum well layer disposed between the quantum barrier layers. When the semiconductor substrate has a lattice constant “a,” each of the quantum barrier layers has a lattice constant “b,” and the quantum well layer has a lattice constant “c,” the semiconductor substrate, the quantum barrier layers, and the quantum well layer satisfy a relationship of b
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公开(公告)号：US20070251915A1
公开(公告)日：2007-11-01
申请号：US11783434
申请日：2007-04-10
IPC分类号： B29D11/00
CPC分类号： G02B3/06 , G02B6/124 , G03F7/0005
摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.
摘要翻译： 一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个 的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。 此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。
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公开(公告)号：US20050054153A1
公开(公告)日：2005-03-10
申请号：US10936539
申请日：2004-09-09
申请人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
发明人： Kazushi Asami , Junji Oohara , Hiroshi Muto , Kazuhiko Sugiura , Tsuyoshi Fukada , Yukihiro Takeuchi
IPC分类号： B81C1/00 , H01L21/306 , H01L29/80 , H05K3/06
CPC分类号： B81C1/00619 , B81C2201/0112
摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.
摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。
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公开(公告)号：US06701782B2
公开(公告)日：2004-03-09
申请号：US10199116
申请日：2002-07-22
IPC分类号： G01F168
CPC分类号： G01F1/692
摘要： A flow sensor, which includes a diaphragm, is made such that the diaphragm is flat or outwardly deformed to allow fluid flow rate measurements at higher flow rates. The diaphragm is made of an upper set of insulating films, electric devices, and a lower set of insulating films. The component layers of the diaphragm are formed such that the average stress in the upper set of insulating films is more compressive than the average stress in the lower set of insulating films.
摘要翻译： 包括隔膜的流量传感器被制成使得隔膜是平坦的或向外变形的，以允许在较高流速下进行流体流速测量。 隔膜由上一组绝缘膜，电气设备和下一组绝缘膜制成。 隔膜的部件层形成为使得上部绝缘膜中的平均应力比下部绝缘膜中的平均应力更大的压缩。
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公开(公告)号：US5619050A
公开(公告)日：1997-04-08
申请号：US399345
申请日：1995-03-06
IPC分类号： G01P15/125 , G01P15/08 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/0802 , G01P15/12 , Y10S73/01
摘要： A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.
摘要翻译： 公开了能够减小漏电流的半导体加速度传感器及其制造方法。 梁结构设置在硅衬底上。 梁结构具有可移动部分，并且可移动部分设置在硅基板上方规定距离处。 可动电极部分形成在可动部分的一部分中。 在硅衬底中形成由杂质扩散层制成的固定电极，以对应于可动电极部分的两侧。 在硅衬底中形成外围电路。 光束结构和外围电路通过由多晶硅制成的导电薄膜电连接。 然后，当向梁结构施加电压并且向两个固定电极施加电压时，形成反型层，并且电流在固定电极之间流动。 在接收到加速度并且可移动部分移位的情况下，在固定电极之间流动的电流改变。
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8.发明授权Physical quantity sensor having optical part and method for manufacturing the same 失效具有光学部件的物理量传感器及其制造方法公开(公告)号：US07540192B2
公开(公告)日：2009-06-02
申请号：US11505386
申请日：2006-08-17
申请人： Yukihiro Takeuchi , Junji Oohara
发明人： Yukihiro Takeuchi , Junji Oohara
IPC分类号： G01P15/125
CPC分类号： B81C1/00126 , B81B2201/047 , G01D5/285 , G02B26/0816
摘要： A method for manufacturing a physical quantity sensor having a movable portion, a support portion and an optical part is provided. The method includes steps of: etching a silicon substrate so that a movable-portion-to-be-formed portion, a support-portion-to-be-formed portion, and an optical-part-to-be-formed portion having a plurality of columns and trenches are formed; oxidizing the optical-part-to-be-formed portion so that each column changes to a silicon oxide column and the trench is filled with a silicon oxide layer; and removing a part of the movable-portion-to-be-formed portion connecting to the silicon substrate so that the movable portion is separated from the silicon substrate.
摘要翻译： 提供一种用于制造具有可移动部分，支撑部分和光学部件的物理量传感器的方法。 该方法包括以下步骤：蚀刻硅衬底，使得可移动部分成形部分，待形成部分，以及具有待形成部分的光学部件，其具有 形成多个列和沟槽; 氧化形成光学部件的部分，使得每个列改变为氧化硅柱，并且沟槽填充有氧化硅层; 以及去除连接到硅衬底的可移动部分成形部分的一部分，使得可移动部分与硅衬底分离。
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公开(公告)号：US07437036B2
公开(公告)日：2008-10-14
申请号：US11513072
申请日：2006-08-31
申请人： Junji Oohara , Yukihiro Takeuchi
发明人： Junji Oohara , Yukihiro Takeuchi
CPC分类号： G01L9/0076
摘要： A method for manufacturing an optical device is provided. The device includes an optical waveguide path having a Bragg grating and a movable portion disposed near the Bragg grating. A displacement of the movable portion provides a change of spacing of the Bragg grating so that a light passing through the optical waveguide path is changed. The optical device detects the physical quantity based on a change of the light. The method includes steps of: forming the optical waveguide path with the Bragg grating on a first part of a silicon substrate; and forming the movable portion on a second part of the silicon substrate.
摘要翻译： 提供了一种制造光学器件的方法。 该装置包括具有布拉格光栅的光波导路径和布置于布拉格光栅附近的可移动部分。 可移动部分的位移提供了布拉格光栅的间隔的变化，使得通过光波导路径的光线改变。 光学装置基于光的变化来检测物理量。 该方法包括以下步骤：在硅衬底的第一部分上形成具有布拉格光栅的光波导路径; 以及在所述硅衬底的第二部分上形成所述可移动部分。
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公开(公告)号：US07418864B2
公开(公告)日：2008-09-02
申请号：US11384330
申请日：2006-03-21
IPC分类号： G01P15/125 , G01P15/00
CPC分类号： B81B3/0086 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P2015/0831
摘要： An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.
摘要翻译： 加速度传感器包括：包括沿第一方向堆叠的支撑层和半导体层的半导体衬底; 可动电极和固定电极; 和沟槽。 可移动电极通过与第二方向一起夹住沟槽而分开面对固定电极。 沟槽在第二方向上具有检测距离。 当施加加速度时，可移动电极与第一方向一起可移动。 可动电极具有与支撑层分离的底部。 可动电极与第二方向的宽度小于固定电极的宽度。 可移动电极与第一方向的厚度小于固定电极的厚度。
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