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    Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus
    1.
    发明授权
    Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus 有权
    半导体装置的制造方法，基板的处理方法以及基板处理装置

    公开(公告)号：US08410001B2

    公开(公告)日：2013-04-02

    申请号：US13047367

    申请日：2011-03-14

    申请人： Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

    发明人： Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

    IPC分类号： H01L21/31 ,  C23C16/36 ,  C23C16/44 ,  C23C16/52

    CPC分类号： H01L21/0228 ,  C23C16/36 ,  C23C16/45531 ,  H01L21/02167

    摘要： An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen.

    摘要翻译： 通过改变常规类型的膜来实现优异的膜类型。 通过执行预定次数的循环，在基板上形成预定厚度的碳氮化物膜，该循环包括以下步骤：在发生CVD反应的条件下将源气体供应到容纳基板的处理容器中，以及 在所述基板上形成包括元件的第一层; 将含碳气体供应到所述处理容器中以在所述第一层上形成包含碳的层，以及形成包含所述元素和所述碳的第二层; 在引起CVD反应的条件下将源气体供给到处理容器中，在第二层上另外形成包含该元素的层，形成包含该元素和碳的第三层; 并向所述处理容器中供给含氮气体以氮化所述第三层，以及形成用作包含所述元素，所述碳和氮的第四层的碳氮化物层。

    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
    4.
    发明授权
    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
    半导体装置的制造方法，基板的处理方法及基板处理装置

    公开(公告)号：US08546272B2

    公开(公告)日：2013-10-01

    申请号：US13083022

    申请日：2011-04-08

    申请人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

    发明人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

    IPC分类号： H01L21/316

    CPC分类号： H01L21/67069 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02104 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0223 ,  H01L21/02247 ,  H01L21/0228 ,  H01L21/67011 ,  H01L21/67017

    摘要： An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle includes steps of: (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate; and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer, wherein the set of steps includes: (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate; (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon; and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer.

    摘要翻译： 形成具有低介电常数，低蚀刻速率和高绝缘性等特征的绝缘膜。 通过执行预定次数的循环，在处理容器中的基板上形成具有预定厚度的碳氮氧化物膜，其中该循环包括以下步骤：（a）执行预定次数的一组步骤以形成碳氮化物 在基板上具有预定厚度的层; 和（b）向处理容器供应含氧气体以氧化具有预定厚度的碳氮化物层，从而形成碳氮氧化物层，其中该步骤包括：（a-1）将含有元素的气体供应到 在使CVD反应形成含有该元素的层的状态下容纳基板的处理容器; （a-2）将含碳气体供给到处理容器中，在含有该元素的层上形成含碳层，从而形成包含该元素和碳的层; 和（a-3）将含氮气体供给到处理容器中以氮化包括元素和碳的层，从而形成碳氮化物层。

    Semiconductor Device Manufacturing Method and Substrate Processing Apparatus
    6.
    发明申请
    Semiconductor Device Manufacturing Method and Substrate Processing Apparatus 审中-公开
    半导体器件制造方法和衬底处理设备

    公开(公告)号：US20100136773A1

    公开(公告)日：2010-06-03

    申请号：US11990120

    申请日：2006-08-04

    申请人： Naonori Akae ,  Masahiro Yonebayashi ,  Tsukasa Kamakura ,  Yoshiro Hirose

    发明人： Naonori Akae ,  Masahiro Yonebayashi ,  Tsukasa Kamakura ,  Yoshiro Hirose

    IPC分类号： H01L21/365 ,  H01L21/443 ,  H01L21/469

    CPC分类号： H01L21/68792 ,  C23C16/4408 ,  H01L21/6719 ,  H01L21/67751

    摘要： A semiconductor device manufacturing method comprises the steps of loading a substrate into a processing chamber, mounting the substrate on a support tool in the processing chamber, processing the substrate mounted on the support tool by supplying process gas into the processing chamber, purging the interior of the processing chamber after the substrate processing step, and unloading the processed substrate from the processing chamber after the step of purging the interior of the processing chamber, wherein in the step of purging the interior of the processing chamber, exhaust is performed toward above the substrate and toward below the substrate in the processing chamber, and the exhaust rate toward above the substrate is set larger than the exhaust rate toward below the substrate.

    摘要翻译： 半导体器件制造方法包括以下步骤：将衬底装载到处理室中，将衬底安装在处理室中的支撑工具上，通过将处理气体供应到处理室中来处理安装在支撑工具上的衬底， 基板处理步骤之后的处理室，以及在清洗处理室内部的步骤之后从处理室卸载处理的基板，其中在清洗处理室的内部的步骤中，朝向基板的上方执行排气 并且朝向处理室中的衬底的下方，并且朝向衬底上方的排气速率被设定为大于朝向衬底下方的排气速率。