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    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
    3.
    发明授权
    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
    半导体装置的制造方法，基板的处理方法及基板处理装置

    公开(公告)号：US08546272B2

    公开(公告)日：2013-10-01

    申请号：US13083022

    申请日：2011-04-08

    申请人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

    发明人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

    IPC分类号： H01L21/316

    CPC分类号： H01L21/67069 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02104 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0223 ,  H01L21/02247 ,  H01L21/0228 ,  H01L21/67011 ,  H01L21/67017

    摘要： An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle includes steps of: (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate; and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer, wherein the set of steps includes: (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate; (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon; and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer.

    摘要翻译： 形成具有低介电常数，低蚀刻速率和高绝缘性等特征的绝缘膜。 通过执行预定次数的循环，在处理容器中的基板上形成具有预定厚度的碳氮氧化物膜，其中该循环包括以下步骤：（a）执行预定次数的一组步骤以形成碳氮化物 在基板上具有预定厚度的层; 和（b）向处理容器供应含氧气体以氧化具有预定厚度的碳氮化物层，从而形成碳氮氧化物层，其中该步骤包括：（a-1）将含有元素的气体供应到 在使CVD反应形成含有该元素的层的状态下容纳基板的处理容器; （a-2）将含碳气体供给到处理容器中，在含有该元素的层上形成含碳层，从而形成包含该元素和碳的层; 和（a-3）将含氮气体供给到处理容器中以氮化包括元素和碳的层，从而形成碳氮化物层。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    5.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
    制造半导体器件的方法，基板处理方法和基板处理装置

    公开(公告)号：US20130273748A1

    公开(公告)日：2013-10-17

    申请号：US13883093

    申请日：2011-11-01

    申请人： Ryota Sasajima ,  Yoshinobu Nakamura ,  Yushin Takasawa ,  Yoshiro Hirose

    发明人： Ryota Sasajima ,  Yoshinobu Nakamura ,  Yushin Takasawa ,  Yoshiro Hirose

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02565 ,  C23C16/308 ,  C23C16/45546 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of manufacturing a semiconductor device is provided, including: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas into the processing vessel; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the processing vessel, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the nitride layer to the oxynitride layer.

    摘要翻译： 提供了一种制造半导体器件的方法，包括：通过多次循环，在基片上形成具有特定膜厚度的氧氮化物膜，该循环是：在基片上形成特定的含有元素的层， 将特定元件装入容纳基板的处理容器中; 通过向所述处理容器供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过将该含氧气体和惰性气体供给到处理容器中，以该顺序为一个循环，将氮化物层变更为氧氮化物层，其中通过控制具有特定膜厚度的氮氧化物膜的组成比来控制 在将氮化物层改变为氮氧化物层时，处理容器中含氧气体的分压。

    Method of manufacturing semiconductor device, substrate processing method, computer-readable medium with program for executing a substrate processing method, and substrate processing apparatus
    6.
    发明授权
    Method of manufacturing semiconductor device, substrate processing method, computer-readable medium with program for executing a substrate processing method, and substrate processing apparatus 有权
    制造半导体器件的方法，衬底处理方法，具有用于执行衬底处理方法的程序的计算机可读介质和衬底处理设备

    公开(公告)号：US09136114B2

    公开(公告)日：2015-09-15

    申请号：US13883093

    申请日：2011-11-01

    申请人： Ryota Sasajima ,  Yoshinobu Nakamura ,  Yushin Takasawa ,  Yoshiro Hirose

    发明人： Ryota Sasajima ,  Yoshinobu Nakamura ,  Yushin Takasawa ,  Yoshiro Hirose

    IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455

    CPC分类号： H01L21/02565 ,  C23C16/308 ,  C23C16/45546 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

    摘要： A method of manufacturing a semiconductor device is provided, including: forming an oxynitride film having a specific film thickness on a substrate by performing multiple numbers of times a cycle of: forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element into a processing vessel in which the substrate is housed; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas into the processing vessel; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the processing vessel, with this sequence as one cycle, wherein a composition ratio of the oxynitride film having the specific film thickness is controlled by controlling a partial pressure of the oxygen-containing gas in the processing vessel, in changing the nitride layer to the oxynitride layer.

    摘要翻译： 提供了一种制造半导体器件的方法，包括：通过多次循环，在基片上形成具有特定膜厚度的氧氮化物膜，该循环是：在基片上形成特定的含有元素的层， 将特定元件装入容纳基板的处理容器中; 通过向所述处理容器供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过将该含氧气体和惰性气体供给到处理容器中，以该顺序为一个循环，将氮化物层变更为氧氮化物层，其中通过控制具有特定膜厚度的氮氧化物膜的组成比来控制 在将氮化物层改变为氮氧化物层时，处理容器中含氧气体的分压。

    Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus
    9.
    发明授权
    Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus 有权
    半导体装置的制造方法，基板的处理方法以及基板处理装置

    公开(公告)号：US08410001B2

    公开(公告)日：2013-04-02

    申请号：US13047367

    申请日：2011-03-14

    申请人： Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

    发明人： Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

    IPC分类号： H01L21/31 ,  C23C16/36 ,  C23C16/44 ,  C23C16/52

    CPC分类号： H01L21/0228 ,  C23C16/36 ,  C23C16/45531 ,  H01L21/02167

    摘要： An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen.

    摘要翻译： 通过改变常规类型的膜来实现优异的膜类型。 通过执行预定次数的循环，在基板上形成预定厚度的碳氮化物膜，该循环包括以下步骤：在发生CVD反应的条件下将源气体供应到容纳基板的处理容器中，以及 在所述基板上形成包括元件的第一层; 将含碳气体供应到所述处理容器中以在所述第一层上形成包含碳的层，以及形成包含所述元素和所述碳的第二层; 在引起CVD反应的条件下将源气体供给到处理容器中，在第二层上另外形成包含该元素的层，形成包含该元素和碳的第三层; 并向所述处理容器中供给含氮气体以氮化所述第三层，以及形成用作包含所述元素，所述碳和氮的第四层的碳氮化物层。

    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
    10.
    发明授权
    Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus 有权
    半导体装置的制造方法，基板的处理方法及基板处理装置

    公开(公告)号：US08076251B2

    公开(公告)日：2011-12-13

    申请号：US12893311

    申请日：2010-09-29

    申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

    发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota ,  Ryota Sasajima

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31608 ,  C23C16/32 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/3185

    摘要： Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括：将基底装载到处理容器中; 通过交替地重复以下步骤来执行在衬底上形成氧化物，氮化物或氧氮化物膜的工艺：（a）通过将含有元素的第一和第二源气体从处理容器中提取和排出而在衬底上形成含有元素的层 ; 和（b）通过将不同于所述第一和第二源气体的反应气体进入和排出所述处理容器而将含有所述元素的层改变为氧化物，氮化物或氧氮化物层; 并从处理容器卸载基材。 第一源气体比第二源气体更具反应性，并且供给到处理容器中的第一源气体的量被设定为小于供给到处理容器中的第二源气体的量。