公开(公告)号：US08410001B2

公开(公告)日：2013-04-02

申请号：US13047367

申请日：2011-03-14

申请人： Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

发明人： Yushin Takasawa ,  Yoshiro Hirose ,  Tsukasa Kamakura ,  Yukinao Kaga

IPC分类号： H01L21/31 ,  C23C16/36 ,  C23C16/44 ,  C23C16/52

CPC分类号： H01L21/0228 ,  C23C16/36 ,  C23C16/45531 ,  H01L21/02167

摘要： An excellent type of a film is realized by modifying conventional types of films. A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas into a process vessel accommodating the substrate under a condition where a CVD reaction is caused, and forming a first layer including an element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the element on the second layer, and forming a third layer including the element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the element, the carbon, and nitrogen.

摘要翻译： 通过改变常规类型的膜来实现优异的膜类型。 通过执行预定次数的循环，在基板上形成预定厚度的碳氮化物膜，该循环包括以下步骤：在发生CVD反应的条件下将源气体供应到容纳基板的处理容器中，以及 在所述基板上形成包括元件的第一层; 将含碳气体供应到所述处理容器中以在所述第一层上形成包含碳的层，以及形成包含所述元素和所述碳的第二层; 在引起CVD反应的条件下将源气体供给到处理容器中，在第二层上另外形成包含该元素的层，形成包含该元素和碳的第三层; 并向所述处理容器中供给含氮气体以氮化所述第三层，以及形成用作包含所述元素，所述碳和氮的第四层的碳氮化物层。

公开(公告)号：US20160013044A1

公开(公告)日：2016-01-14

申请号：US14864167

申请日：2015-09-24

申请人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

发明人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

IPC分类号： H01L21/02

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/36 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211

摘要： An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.

摘要翻译： 形成包括低介电常数，低蚀刻速率和高绝缘性等特性的绝缘膜。 在处理容器中向加热的基板供给含有元素，含碳气体和含氮气体的气体，以形成包含该元素的碳氮化物层，并将含有元素和含氧气体的气体供给到 处理容器中加热的衬底以形成包含该元件的氧化物层交替重复，以在衬底上形成具有碳氮化物层和氧化物层交替堆叠的碳氮氧化物膜。

公开(公告)号：US09378943B2

公开(公告)日：2016-06-28

申请号：US13345885

申请日：2012-01-09

申请人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

发明人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

IPC分类号： H01L21/314 ,  H01L21/02 ,  C23C16/30 ,  C23C16/36 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/36 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211

摘要： An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.

摘要翻译： 形成包括低介电常数，低蚀刻速率和高绝缘性等特性的绝缘膜。 在处理容器中向加热的基板供给含有元素，含碳气体和含氮气体的气体，以形成包含该元素的碳氮化物层，并将含有元素和含氧气体的气体供给到 处理容器中加热的衬底以形成包含该元件的氧化物层交替重复，以在衬底上形成具有碳氮化物层和氧化物层交替堆叠的碳氮氧化物膜。

公开(公告)号：US08546272B2

公开(公告)日：2013-10-01

申请号：US13083022

申请日：2011-04-08

申请人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

发明人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

IPC分类号： H01L21/316

CPC分类号： H01L21/67069 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02104 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0223 ,  H01L21/02247 ,  H01L21/0228 ,  H01L21/67011 ,  H01L21/67017

摘要： An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film having a predetermined thickness is formed on a substrate in a process vessel by performing a cycle a predetermined number of times, wherein the cycle includes steps of: (a) performing a set of steps a predetermined number of times to form a carbonitride layer having a predetermined thickness on the substrate; and (b) supplying an oxygen-containing gas into the process vessel to oxidize the carbonitride layer having the predetermined thickness, thereby forming an oxycarbonitride layer, wherein the set of steps includes: (a-1) supplying a gas containing an element into the process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a layer containing the element on the substrate; (a-2) supplying a carbon-containing gas into the process vessel to form a carbon-containing layer on the layer containing the element, thereby forming a layer including the element and a carbon; and (a-3) supplying a nitrogen-containing gas into the process vessel to nitride the layer including the element and the carbon, thereby forming the carbonitride layer.

摘要翻译： 形成具有低介电常数，低蚀刻速率和高绝缘性等特征的绝缘膜。 通过执行预定次数的循环，在处理容器中的基板上形成具有预定厚度的碳氮氧化物膜，其中该循环包括以下步骤：（a）执行预定次数的一组步骤以形成碳氮化物 在基板上具有预定厚度的层; 和（b）向处理容器供应含氧气体以氧化具有预定厚度的碳氮化物层，从而形成碳氮氧化物层，其中该步骤包括：（a-1）将含有元素的气体供应到 在使CVD反应形成含有该元素的层的状态下容纳基板的处理容器; （a-2）将含碳气体供给到处理容器中，在含有该元素的层上形成含碳层，从而形成包含该元素和碳的层; 和（a-3）将含氮气体供给到处理容器中以氮化包括元素和碳的层，从而形成碳氮化物层。

公开(公告)号：US20120184110A1

公开(公告)日：2012-07-19

申请号：US13345885

申请日：2012-01-09

申请人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

发明人： Yoshiro Hirose ,  Yushin Takasawa ,  Tsukasa Kamakura ,  Yoshinobu Nakamura ,  Ryota Sasajima

IPC分类号： H01L21/314 ,  C23C16/44

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/36 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211

摘要： An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.

摘要翻译： 形成包括低介电常数，低蚀刻速率和高绝缘性等特性的绝缘膜。 在处理容器中向加热的基板供给含有元素，含碳气体和含氮气体的气体，以形成包含该元素的碳氮化物层，并将含有元素和含氧气体的气体供给到 处理容器中加热的衬底以形成包含该元件的氧化物层交替重复，以在衬底上形成具有碳氮化物层和氧化物层交替堆叠的碳氮氧化物膜。

公开(公告)号：US08202809B2

公开(公告)日：2012-06-19

申请号：US12950340

申请日：2010-11-19

申请人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

发明人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45502 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645

摘要： A semiconductor device manufacturing method includes: forming a layer on a heated substrate by supplying source gas into a process vessel; changing the layer into an oxide layer by supplying gases containing oxygen and hydrogen to the heated substrate in the process vessel under a pressure lower than atmospheric pressure; and forming an oxide film on the heated substrate by alternately repeating the forming of the layer and the changing of the layer while purging an inside of the process vessel therebetween. In the forming of the layer, the source gas is supplied toward the substrate through a nozzle at a side of the substrate, and inert or hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate, such that the velocity of the source gas flowing parallel to the substrate is greater than the velocity of the inert gas flowing parallel to the substrate in the purging of the process vessel.

摘要翻译： 半导体器件制造方法包括：通过将源气体供应到处理容器中，在加热的衬底上形成层; 通过在低于大气压的压力下将含有氧气和氢气的气体提供给处理容器中的加热衬底，将层变成氧化物层; 以及通过交替重复所述层的形成和所述层的改变，同时在其之间吹扫所述处理容器的内部，在所述加热的基板上形成氧化膜。 在层的形成中，源气体通过衬底侧的喷嘴向基板供给，并且通过喷嘴将惰性或含氢气体与源气体一起供给基板，使得速度 平行于衬底流动的源气体的流量大于在处理容器清洗过程中平行于衬底流动的惰性气体的速度。

公开(公告)号：US09196473B2

公开(公告)日：2015-11-24

申请号：US13976673

申请日：2011-12-16

申请人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

发明人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455

CPC分类号： H01L21/0214 ,  C23C16/308 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

摘要： A method that includes: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

摘要翻译： 一种方法，其包括：在引起所述源气体的热分解反应的条件下，通过将源气体供给到在处理容器中加热的基板来形成特定含有元素的层; 通过向所述基板供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过向基板供给含氧气体来将氮化物层改变为氮氧化物层，源极气体比与惰性气体平行喷射惰性气体的情况更加强烈地喷射到基板的表面上 在通过喷嘴供给惰性气体或含氢气体时，清洗处理容器内部的基板。

公开(公告)号：US08367557B2

公开(公告)日：2013-02-05

申请号：US12607223

申请日：2009-10-28

申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species; wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).

摘要翻译： 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内压低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含氧气体生成含氧的氧化物质，氧化物质氧化含元素层; 其中在步骤（a）中所述含氢气体与所述源气体一起供应到所述处理容器中。

公开(公告)号：US09018104B2

公开(公告)日：2015-04-28

申请号：US13637200

申请日：2011-03-02

申请人： Yoshiro Hirose ,  Kenji Kanayama ,  Norikazu Mizuno ,  Yushin Takasawa ,  Yosuke Ota

发明人： Yoshiro Hirose ,  Kenji Kanayama ,  Norikazu Mizuno ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/45527 ,  C23C16/30 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337

摘要： There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.

摘要翻译： 提供了一种制造半导体器件的方法，包括通过交替执行以下步骤规定的次数，在衬底上形成具有规定组成和规定膜厚度的绝缘膜：将氯硅烷系源 和基于氨基硅烷的源至处理室中的衬底，然后供给另一个源，以在衬底上形成含有硅，氮和碳的第一层; 以及将不同于每个源的反应气体供应到处理室中的衬底，以修改第一层并形成第二层。

公开(公告)号：US20130337660A1

公开(公告)日：2013-12-19

申请号：US13976673

申请日：2011-12-16

申请人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

发明人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

IPC分类号： H01L21/02

CPC分类号： H01L21/0214 ,  C23C16/308 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

摘要： Provided: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

摘要翻译： 提供：在引起源气体的热分解反应的条件下，通过将源气体供给到在处理容器中加热的基板来形成特定的含有元素的层; 通过向所述基板供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过向基板供给含氧气体来将氮化物层改变为氮氧化物层，源极气体比与惰性气体平行喷射惰性气体的情况更加强烈地喷射到基板的表面上 在通过喷嘴供给惰性气体或含氢气体时，清洗处理容器内部的基板。