公开(公告)号：US06999649B1

公开(公告)日：2006-02-14

申请号：US10281538

申请日：2002-10-28

申请人： Zhan Chen ,  Le Li

发明人： Zhan Chen ,  Le Li

IPC分类号： G02B6/26

CPC分类号： G02F1/315 ,  G02B6/351 ,  G02B6/3546 ,  G02F1/07 ,  G02F1/1326 ,  G02F1/1334 ,  G02F1/137 ,  G02F1/31 ,  G02F2001/213

摘要： Technology for constructing a single layer polarization insensitive electrically switchable liquid crystal mirror is disclosed which serves as the basic element for constructing an optical router switch array in free space as well as waveguide format. The optical router switch array includes a plurality of switchable liquid crystal mirror elements having liquid crystal arranged in stack cells and/or in a waveguide configuration. The resulted optical router switches are motionless, polarization insensitive, stable within the operational spectral region, and stable versus temperature. The invention also includes methods for manufacturing a single switchable liquid crystal mirror element and the optical switch arrays. The same technology is further extended to constructing an electrically tunable optical filter that is motionless and polarization insensitive.

摘要翻译： 公开了用于构建单层偏振不敏感电开关液晶镜的技术，其用作在自由空间以及波导格式中构建光路由器开关阵列的基本元件。 光路由器开关阵列包括多个具有布置在堆叠单元中和/或波导配置中的液晶的可切换液晶镜元件。 所产生的光路由器开关是静止的，极化不敏感的，在工作光谱区域内是稳定的，并且与温度相对稳定。 本发明还包括用于制造单个可切换液晶镜元件和光开关阵列的方法。 相同的技术进一步扩展到构造一个电可调光学滤波器，它是静止的和极化不敏感的。

公开(公告)号：US07146070B1

公开(公告)日：2006-12-05

申请号：US10687682

申请日：2003-10-18

申请人： Le Li ,  Haiping Yu ,  Ben Y. Tang ,  Zhan Chen

发明人： Le Li ,  Haiping Yu ,  Ben Y. Tang ,  Zhan Chen

IPC分类号： G02B6/35 ,  G02B26/08

CPC分类号： G02F1/1326 ,  G02B6/3512 ,  G02B6/3596 ,  G02F2203/06 ,  G02F2203/24

摘要： Electro-optically operated transmitters containing a wave guide liquid crystal beam steering device in series of fine beam steering devices as well as electrically switchable mirror are disclosed. The wave guide beam steering device is constructed on a planar lightwave circuit that contains a plurality of liquid crystal switching elements intersecting a plurality of optical wave guides and one main wave guide that has a curvature for light propagation. The transceiver is capable of continuously steering multiple beams of light into separate independent directions with a field-of-regard close to 4π. The resulted optical transmitter device is motionless, polarization sensitive or insensitive, stable within the operational spectral region, and stable versus temperature. When an optical receiver is integrated, the transmitters become transceivers. The invention also includes the methods for manufacturing the wave guide beam steering device.

摘要翻译： 公开了一种电光转换器，其包含一系列精细光束转向装置的波导液晶束转向装置以及可电切换镜。 波导光束转向装置构造在包含与多个光波导相交的多个液晶开关元件和具有光传播曲率的一个主波导的平面光波回路上。 收发器能够将多个光束连续地转向独立的独立方向，其中视场接近4pi。 所产生的光发射机设备在工作光谱区域内是静止的，极化敏感的或不敏感的，稳定的，并且与温度相对稳定。 当光接收机集成时，发射机成为收发器。 本发明还包括制造波导光束转向装置的方法。

公开(公告)号：US09129907B2

公开(公告)日：2015-09-08

申请号：US11517909

申请日：2006-09-08

申请人： Michael L. White ,  Zhan Chen

发明人： Michael L. White ,  Zhan Chen

IPC分类号： H01L21/3105 ,  C09G1/02

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.

摘要翻译： 本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。 该组合物具有约5或更低的pH，并且包含胶体二氧化硅，至少一种选自鏻盐，锍盐及其组合的鎓化合物及其水性载体; 还公开了利用该组合物来研磨半导体材料的表面的CMP方法。

公开(公告)号：US08759216B2

公开(公告)日：2014-06-24

申请号：US11448205

申请日：2006-06-07

申请人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

发明人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

IPC分类号： H01L21/302 ,  H01L21/336 ,  C03C15/00 ,  C03C25/68

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.

摘要翻译： 本发明提供一种研磨含氮化硅的基板的方法。 该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。 所述至少一种酸性组分的pKa在约1至4.5的范围内。 所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。

公开(公告)号：US08247327B2

公开(公告)日：2012-08-21

申请号：US12221023

申请日：2008-07-30

申请人： Francesco De Rege Thesauro ,  Zhan Chen

发明人： Francesco De Rege Thesauro ,  Zhan Chen

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates.

摘要翻译： 本发明提供用于抛光含硅基材的化学机械抛光（CMP）组合物和方法。 本发明的方法包括以下步骤：使含硅衬底与抛光垫和水性CMP组合物接触，并且在保持CMP组合物的一部分与表面接触的同时引起抛光垫和衬底之间的相对运动 所述衬底磨损所述衬底的至少一部分。 CMP组合物包括二氧化铈研磨剂，具有pKa约4至约9的官能团的抛光添加剂，具有亲水部分和亲油部分的非离子表面活性剂，其中亲水部分的数均分子量为约500g / mol以上，和水性载体，其中组合物的pH为7以下。 该方法减少了晶片上的缺陷，特别是高去除的局部区域。 该方法对于相对于含半导体硅的衬底以高速率抛光介电含硅衬底也是有用的。

公开(公告)号：US20080060278A1

公开(公告)日：2008-03-13

申请号：US11517909

申请日：2006-09-08

申请人： Michael L. White ,  Zhan Chen

发明人： Michael L. White ,  Zhan Chen

IPC分类号： B24D3/02 ,  C09K13/00 ,  C09K3/14 ,  B24B1/00

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semiconductor materials. The composition has a pH of about 5 or less and comprises colloidal silica, at least one onium compound selected from the group consisting of a phosphonium salt, a sulfonium salt, and a combination thereof, and an aqueous carrier therefor; A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.

摘要翻译： 本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。 该组合物具有约5或更低的pH，并且包含胶体二氧化硅，至少一种选自鏻盐，锍盐及其组合的鎓化合物及其水性载体; 还公开了利用该组合物来研磨半导体材料的表面的CMP方法。

公开(公告)号：US20150141600A1

公开(公告)日：2015-05-21

申请号：US14401743

申请日：2012-07-23

申请人： Yu Wang ,  Wei Liu ,  Zhan Chen

发明人： Yu Wang ,  Wei Liu ,  Zhan Chen

IPC分类号： C08F24/00

CPC分类号： C08F24/00 ,  C08F4/38 ,  C08F6/003 ,  C08F126/06 ,  C08L39/04

摘要： The present invention relates to a synthesis method of ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content, which comprises: using N-vinyl butyrolactam monomers and water with the mass ratio of 3:17˜8:12, then based on the N-vinyl butyrolactam monomers, using 0.5%˜5.0% by weight of initiators, 0.1%˜5.0% by weight of a catalyst, and 0.1%˜10% by weight of a molecular weight regulator; in the presence of an inert gas, adding the above mentioned raw materials in batches, adjusting the pH of the reaction system to 7.0-8.0 with an activator, reacting at the polymerization temperature of 60-85° C.; finally adding a peroxide and keeping the temperature for 2 hours, to obtain an aqueous solution of ultra low molecular weight homopolymerized N-vinyl butyrolactam, drying the aqueous solution to obtain a powdery ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content, whose K value is 12-17, whose molecular weight is 2000-15000, and whose residual monomer content is less than 10 ppm, so the present invention is designed skillfully and simple in preparation, the residual monomer content of the ultra low molecular weight homopolymerized N-vinyl butyrolactam with ultra low residual monomer content prepared is less than 10 ppm, and the K value is 12-17, therefore the present invention is suitable for large-scale popularization.

摘要翻译： 本发明涉及具有超低残留单体含量的超低分子量均聚N-乙烯基丁内酰胺的合成方法，其包括：使用N-乙烯基丁内酰胺单体和质量比为3：17〜8：12的水，然后 基于N-乙烯基丁内酰胺单体，使用0.5重量％〜5.0重量％的引发剂，0.1重量％〜5.0重量％的催化剂和0.1重量％〜10重量％的分子量调节剂; 在惰性气体的存在下，分批加入上述原料，用活化剂将反应体系的pH调节至7.0-8.0，在聚合温度为60-85℃下反应; 最后加入过氧化物并保持温度2小时，得到超低分子量均聚N-乙烯基丁内酰胺水溶液，干燥该水溶液，得到具有超低残留单体的粉状超低分子量均聚N-乙烯基丁内酰胺 其K值为12-17，分子量为2000-15000，残留单体含量小于10ppm，本发明设计巧妙简单，超低分子量的残留单体含量 制备的超低残留单体含量的均聚的N-乙烯基丁内酰胺重量小于10ppm，K值为12-17，因此本发明适用于大规模普及。

公开(公告)号：US08597540B2

公开(公告)日：2013-12-03

申请号：US13554829

申请日：2012-07-20

申请人： Francesco De Rege Thesauro ,  Zhan Chen

发明人： Francesco De Rege Thesauro ,  Zhan Chen

IPC分类号： C09K13/06

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates.

摘要翻译： 本发明提供用于抛光含硅基材的化学机械抛光（CMP）组合物和方法。 本发明的方法包括以下步骤：使含硅衬底与抛光垫和水性CMP组合物接触，并且在保持CMP组合物的一部分与表面接触的同时引起抛光垫和衬底之间的相对运动 所述衬底磨损所述衬底的至少一部分。 CMP组合物包括二氧化铈研磨剂，具有pKa约4至约9的官能团的抛光添加剂，具有亲水部分和亲油部分的非离子表面活性剂，其中亲水部分的数均分子量为约500g / mol以上，和水性载体，其中组合物的pH为7以下。 该方法减少了晶片上的缺陷，特别是高去除的局部区域。 该方法对于相对于含半导体硅的衬底以高速率抛光介电含硅衬底也是有用的。

公开(公告)号：US20110166857A1

公开(公告)日：2011-07-07

申请号：US13001596

申请日：2009-09-15

申请人： Xiangyong Xie ,  Zhan Chen

发明人： Xiangyong Xie ,  Zhan Chen

IPC分类号： G10L15/00

CPC分类号： G10L25/78

摘要： A human voice distinguishing method and device are provided. The method involves: taking every n sampling points of the current frame of audio signals as one subsection, wherein n is a positive integer, judging whether two adjacent subsections have transition relative to a distinguishing threshold, wherein the sliding maximum absolute value of the two adjacent subsections is more and less than the distinguishing threshold respectively, if so, then determining the current frame to be human voice, where the sliding maximum absolute value of the subsection is obtained by the following method: taking the maximum value of absolute intensity of every sampling point in this subsection as the initial maximum absolute value of this subsection, and taking the maximum value of the initial maximum absolute value of this subsection and m subsections following this subsection as the sliding maximum absolute value of this subsection, wherein m is a positive integer.

摘要翻译： 提供人声识别方法和装置。 该方法包括：将音频信号当前帧的每n个采样点作为一个子部分，其中n是正整数，判断两个相邻子部分是否具有相对于一个区别阈值的转变，其中两个邻近的滑动最大绝对值 如果是，则分节分别大于区别阈值，然后将当前帧确定为人声，其中通过以下方法获得子段的滑动最大绝对值：取每个采样的绝对强度的最大值 指出本小节作为本款的初始最大绝对值，并将本小节的初始最大绝对值的最大值和本小节后面的m个小节作为本小节的滑动最大绝对值，其中m为正整数 。

公开(公告)号：US20100190339A1

公开(公告)日：2010-07-29

申请号：US12670495

申请日：2008-07-24

申请人： Zhan Chen ,  Kai Luo ,  Robert Vacassy

发明人： Zhan Chen ,  Kai Luo ,  Robert Vacassy

IPC分类号： H01L21/304 ,  C09K13/00

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  G11C13/0004 ,  H01L21/31053

摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change material (PCM), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises a particulate abrasive material in combination with lysine, an optional oxidizing agent, and an aqueous carrier therefor. CMP methods for polishing a phase change material-containing substrate utilizing the composition are also disclosed.

摘要翻译： 本发明提供了适用于抛光包括相变材料（PCM）的基材的化学机械抛光（CMP）组合物，例如锗 - 锑 - 碲（GST）合金。 组合物包含与赖氨酸组合的颗粒磨料，任选的氧化剂及其水性载体。 还公开了利用该组合物研磨含相变材料的衬底的CMP方法。