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    Coated carbon nanotube array electrodes
    1.
    发明申请
    Coated carbon nanotube array electrodes 失效
    涂层碳纳米管阵列电极

    公开(公告)号：US20070134555A1

    公开(公告)日：2007-06-14

    申请号：US11595561

    申请日：2006-11-09

    申请人： Zhifeng Ren ,  Jian Wen ,  Jinghua Chen ,  Zhongping Huang ,  Dezhi Wang

    发明人： Zhifeng Ren ,  Jian Wen ,  Jinghua Chen ,  Zhongping Huang ,  Dezhi Wang

    IPC分类号： H01M4/66 ,  H01M4/60 ,  H01M4/04

    CPC分类号： H01G9/155 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0048 ,  H01L51/0052 ,  H01M4/133 ,  H01M4/137 ,  H01M4/366 ,  H01M4/583 ,  H01M4/602 ,  H01M4/663 ,  H01M4/96 ,  Y02E60/13 ,  Y10S977/742 ,  Y10S977/857 ,  Y10S977/948

    摘要： The present invention provides conductive carbon nanotube (CNT) electrode materials comprising aligned CNT substrates coated with an electrically conducting polymer, and the fabrication of electrodes for use in high performance electrical energy storage devices. In particular, the present invention provides conductive CNTs electrode material whose electrical properties render them especially suitable for use in high efficiency rechargeable batteries. The present invention also provides methods for obtaining surface modified conductive CNT electrode materials comprising an array of individual linear, aligned CNTs having a uniform surface coating of an electrically conductive polymer such as polypyrrole, and their use in electrical energy storage devices.

    摘要翻译： 本发明提供了导电碳纳米管（CNT）电极材料，其包括涂覆有导电聚合物的对准的CNT基片，以及用于高性能电能存储装置的电极的制造。 特别地，本发明提供导电CNT电极材料，其电性能使它们特别适用于高效率可再充电电池。 本发明还提供了用于获得表面改性的导电CNT电极材料的方法，其包括具有导电聚合物如聚吡咯的均匀表面涂层的各种线性排列的CNT阵列，以及它们在电能存储装置中的用途。

    Coated carbon nanotube array electrodes
    2.
    发明授权
    Coated carbon nanotube array electrodes 失效
    涂层碳纳米管阵列电极

    公开(公告)号：US07442284B2

    公开(公告)日：2008-10-28

    申请号：US11595561

    申请日：2006-11-09

    申请人： Zhifeng Ren ,  Jian Wen ,  Jinghua Chen ,  Zhongping Huang ,  Dezhi Wang

    发明人： Zhifeng Ren ,  Jian Wen ,  Jinghua Chen ,  Zhongping Huang ,  Dezhi Wang

    IPC分类号： H01M4/66

    CPC分类号： H01G9/155 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0048 ,  H01L51/0052 ,  H01M4/133 ,  H01M4/137 ,  H01M4/366 ,  H01M4/583 ,  H01M4/602 ,  H01M4/663 ,  H01M4/96 ,  Y02E60/13 ,  Y10S977/742 ,  Y10S977/857 ,  Y10S977/948

    摘要： The present invention provides conductive carbon nanotube (CNT) electrode materials comprising aligned CNT substrates coated with an electrically conducting polymer, and the fabrication of electrodes for use in high performance electrical energy storage devices. In particular, the present invention provides conductive CNTs electrode material whose electrical properties render them especially suitable for use in high efficiency rechargeable batteries. The present invention also provides methods for obtaining surface modified conductive CNT electrode materials comprising an array of individual linear, aligned CNTs having a uniform surface coating of an electrically conductive polymer such as polypyrrole, and their use in electrical energy storage devices.

    摘要翻译： 本发明提供了导电碳纳米管（CNT）电极材料，其包括涂覆有导电聚合物的对准的CNT基片，以及用于高性能电能存储装置的电极的制造。 特别地，本发明提供导电CNT电极材料，其电性能使它们特别适用于高效率可再充电电池。 本发明还提供了用于获得表面改性的导电CNT电极材料的方法，其包括具有导电聚合物如聚吡咯的均匀表面涂层的各种线性排列的CNT阵列，以及它们在电能存储装置中的用途。

    METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS
    5.
    发明申请
    METHODS FOR HIGH FIGURE-OF-MERIT IN NANOSTRUCTURED THERMOELECTRIC MATERIALS 有权
    在纳米结构的热电材料中的高图形方法

    公开(公告)号：US20080202575A1

    公开(公告)日：2008-08-28

    申请号：US11949353

    申请日：2007-12-03

    申请人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    发明人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    IPC分类号： H01L35/34 ,  H01L35/16

    CPC分类号： H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

    摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

    摘要翻译： 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。

    Methods for high figure-of-merit in nanostructured thermoelectric materials
    6.
    发明授权
    Methods for high figure-of-merit in nanostructured thermoelectric materials 有权
    纳米结构热电材料中高品质因数的方法

    公开(公告)号：US08865995B2

    公开(公告)日：2014-10-21

    申请号：US11949353

    申请日：2007-12-03

    申请人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    发明人： Zhifeng Ren ,  Bed Poudel ,  Gang Chen ,  Yucheng Lan ,  Dezhi Wang ,  Qing Hao ,  Mildred Dresselhaus ,  Yi Ma ,  Xiao Yan ,  Xiaoyuan Chen ,  Xiaowei Wang ,  Joshi R. Giri ,  Bo Yu

    IPC分类号： H01L35/34 ,  H01L35/16 ,  H01L35/22

    CPC分类号： H01L35/20 ,  H01L35/16 ,  H01L35/18 ,  H01L35/22 ,  H01L35/34

    摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

    摘要翻译： 公开了具有高品质因数的ZT值的热电材料。 在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。 这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。 这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。 起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。 进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。

    Methods for Growing Carbon Nanotubes on Single Crystal Substrates
    7.
    发明申请
    Methods for Growing Carbon Nanotubes on Single Crystal Substrates 审中-公开
    在单晶衬底上生长碳纳米管的方法

    公开(公告)号：US20090200912A1

    公开(公告)日：2009-08-13

    申请号：US12090755

    申请日：2006-10-20

    申请人： Zhifeng Ren ,  Guangyong Xiong ,  Dezhi Wang ,  Baoqing Zeng

    发明人： Zhifeng Ren ,  Guangyong Xiong ,  Dezhi Wang ,  Baoqing Zeng

    IPC分类号： H01J1/00 ,  H01L21/20

    CPC分类号： B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  C01B32/162 ,  C01B2202/34 ,  H01J9/025 ,  H01J2201/30469

    摘要： Methods for growing carbon nanotubes on single crystal substrates are disclosed. A method of producing a nanostructure material comprises coating a single crystal substrate with a catalyst film to form a catalyst coated substrate; annealing the catalyst film by supplying a first promoter gas to the catalyst coated substrate at a first temperature and a first pressure; and supplying a second promoter gas and a carbon-source gas to the catalyst coated substrate in a substantially water-free atmosphere at a second pressure and a second temperature for a time period to cause growth of nanostructures on the catalyst coated substrate. The nanostructure material is used in various applications.

    摘要翻译： 公开了在单晶衬底上生长碳纳米管的方法。 制造纳米结构材料的方法包括用催化剂膜涂覆单晶基材以形成催化剂涂覆的基材; 通过在第一温度和第一压力下向催化剂涂覆的基底提供第一促进剂气体来对催化剂膜进行退火; 以及在第二压力和第二温度下在基本无水的气氛中将催化剂涂覆的基材上的第二助催化剂气体和碳源气体供给一段时间，以使催化剂涂覆的基材上的纳米结构生长。 纳米结构材料用于各种应用。