公开(公告)号：US06605863B2

公开(公告)日：2003-08-12

申请号：US10178398

申请日：2002-06-24

申请人： Zhiping Yin ,  Gary Chen

发明人： Zhiping Yin ,  Gary Chen

IPC分类号： H01L2358

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/0276 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76807

摘要： Methods of selectively removing post-etch polymer material and dielectric antireflective coatings (DARC) without substantially etching an underlying carbon-doped low k dielectric layer, and compositions for the selective removal of a DARC layer and post-etch polymer material are provided. A composition comprising trimethylammonium fluoride is used to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer at an etch rate of the antireflective coating layer to the low k dielectric layer that is greater than the etch rate of the antireflective coating to a TEOS layer. The method and composition are useful, for example, in the formation of high aspect ratio openings in low k (carbon doped) silicon oxide dielectric layers and maintaining the integrity of the dimensions of the formed openings during a cleaning step to remove a post-etch polymer and antireflective coating.

公开(公告)号：US06890865B2

公开(公告)日：2005-05-10

申请号：US10423210

申请日：2003-04-25

申请人： Zhiping Yin ,  Gary Chen

发明人： Zhiping Yin ,  Gary Chen

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/0276 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76807

摘要： Methods of selectively removing post-etch polymer material and dielectric antireflective coatings (DARC) without substantially etching an underlying carbon-doped low k dielectric layer, and compositions for the selective removal of a DARC layer and post-etch polymer material are provided. A composition comprising trimethylammonium fluoride is used to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer at an etch rate of the antireflective coating layer to the low k dielectric layer that is greater than the etch rate of the antireflective coating to a TEOS layer. The method and composition are useful, for example, in the formation of high aspect ratio openings in low k (carbon doped) silicon oxide dielectric layers and maintaining the integrity of the dimensions of the formed openings during a cleaning step to remove a post-etch polymer and antireflective coating.

摘要翻译： 提供了选择性地去除蚀刻后聚合物材料和介电抗反射涂层（DARC）而不基本上蚀刻下面的掺碳低k电介质层的方法，以及用于选择性去除DARC层和蚀刻后聚合物材料的组合物。 使用包含三甲基氟化铵的组合物以抗反射涂层到低k电介质层的蚀刻速率选择性地蚀刻覆盖低k电介质层的电介质抗反射涂层，其大于抗反射涂层对TEOS的蚀刻速率 层。 该方法和组合物可用于例如在低k（碳掺杂）氧化硅介电层中形成高纵横比的开口，并且在清洁步骤期间保持形成的开口的尺寸的完整性以去除蚀刻后 聚合物和抗反射涂层。

公开(公告)号：US06573175B1

公开(公告)日：2003-06-03

申请号：US09998729

申请日：2001-11-30

申请人： Zhiping Yin ,  Gary Chen

发明人： Zhiping Yin ,  Gary Chen

IPC分类号： H01L214763

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/0276 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76807

摘要： Methods of selectively removing post-etch polymer material and dielectric antireflective coatings (DARC) without substantially etching an underlying carbon-doped low k dielectric layer, and compositions for the selective removal of a DARC layer and post-etch polymer material are provided. A composition comprising trimethylammonium fluoride is used to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer at an etch rate of the antireflective coating layer to the low k dielectric layer that is greater than the etch rate of the antireflective coating to a TEOS layer. The method and composition are useful, for example, in the formation of high aspect ratio openings in low k (carbon doped) silicon oxide dielectric layers and maintaining the integrity of the dimensions of the formed openings during a cleaning step to remove a post-etch polymer and antireflective coating.

摘要翻译： 提供了选择性地去除蚀刻后聚合物材料和介电抗反射涂层（DARC）而不基本上蚀刻下面的掺碳低k电介质层的方法，以及用于选择性去除DARC层和蚀刻后聚合物材料的组合物。 使用包含三甲基氟化铵的组合物以抗反射涂层到低k电介质层的蚀刻速率选择性地蚀刻覆盖低k电介质层的电介质抗反射涂层，其大于抗反射涂层对TEOS的蚀刻速率 层。 该方法和组合物可用于例如在低k（碳掺杂）氧化硅介电层中形成高纵横比的开口，并且在清洁步骤期间保持形成的开口的尺寸的完整性以去除蚀刻后 聚合物和抗反射涂层。

公开(公告)号：US20120256309A1

公开(公告)日：2012-10-11

申请号：US13530679

申请日：2012-06-22

申请人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

发明人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

IPC分类号： H01L23/48

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.

摘要翻译： 具有不同尺寸特征的集成电路，其中较小特征与具有通过常规光刻形成的尺寸的较大特征具有间距倍增关系。

公开(公告)号：US08129093B2

公开(公告)日：2012-03-06

申请号：US12761151

申请日：2010-04-15

申请人： Zhiping Yin ,  Jingyi Bai

发明人： Zhiping Yin ,  Jingyi Bai

IPC分类号： G03F7/26

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/091

摘要： A photo acid generator (PAG) or an acid is used to reduce resist scumming and footing. Diffusion of acid from photoresist into neighbors causes a decreased acid level, and thus causes resist scumming. An increased acid layer beneath the resist prevents acid diffusion. In one embodiment, the increased acid layer is a layer of spun-on acid or PAG dissolved in aqueous solution. In another embodiment, the increased acid layer is a hard mask material with a PAG or an acid mixed into the material. The high acid content inhibits the diffusion of acid from the photoresist into neighboring layers, and thus substantially reduces photoresist scumming and footing.

摘要翻译： 使用光酸产生剂（PAG）或酸来降低抗污垢和基底。 酸从光致抗蚀剂扩散到邻居会导致酸水平降低，从而导致抗污垢浮渣。 抗蚀剂下面的增加的酸层防止酸扩散。 在一个实施方案中，增加的酸层是溶解在水溶液中的纺丝酸或PAG层。 在另一个实施方案中，增加的酸层是具有混合到该材料中的PAG或酸的硬掩模材料。 高酸含量抑制酸从光致抗蚀剂扩散到相邻层中，从而基本上减少光致抗蚀剂的浮渣和基底。

公开(公告)号：US20110019051A1

公开(公告)日：2011-01-27

申请号：US12509398

申请日：2009-07-24

申请人： Zhiping Yin ,  John W. Ladd

发明人： Zhiping Yin ,  John W. Ladd

IPC分类号： H04N5/335

CPC分类号： H04N5/378 ,  H04N5/347 ,  H04N9/07

摘要： An image sensor has an array of pixels of different colors. The pixels may be arranged in a repeating pattern of eight pixels having four rows and two columns. During charge summing operations, the first and third rows may share a floating diffusion and the second and fourth rows may share a floating diffusion. When charge summing is inactive, transfer gates in the first and second columns may be controlled independently, while transfer gates in pairs of rows may be controlled simultaneously. When charge summing is active, summed charges from pixels of the same color in the first and third rows may be placed on the floating diffusion shared by the first and third rows and summed charges from pixels of the same color in the second and fourth rows may be placed on the floating diffusion shared by the second and fourth rows.

摘要翻译： 图像传感器具有不同颜色的像素阵列。 像素可以以具有四行和两列的八个像素的重复图案布置。 在电荷求和操作期间，第一和第三行可以共享浮动扩散，并且第二和第四行可以共享浮动扩散。 当电荷求和不活动时，可以独立地控制第一和第二列中的传输门，同时可以同时控制成对行的传输门。 当充电求和有效时，第一和第三行中相同颜色的像素的相加电荷可以被放置在由第一和第三行共享的浮动扩散上，并且第二行和第四行中相同颜色的像素的相加电荷可以 放置在由第二和第四行共享的浮动扩散上。

公开(公告)号：US07804115B2

公开(公告)日：2010-09-28

申请号：US11482244

申请日：2006-07-07

申请人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

发明人： Richard Holscher ,  Zhiping Yin ,  Tom Glass

IPC分类号： H01L31/062 ,  C09K19/00

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/3086 ,  Y10T428/1086

摘要： In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.

摘要翻译： 一方面，本发明包括半导体处理方法。 在基板上形成防反射材料层。 抗反射材料层的至少一部分在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 图案化光刻胶层。 除去由图案化的光致抗蚀剂层掩蔽的抗反射材料层的一部分。 另一方面，本发明包括以下半导体处理。 在基板上形成防反射材料层。 抗反射材料层在大于约400℃的温度下退火。在退火的抗反射材料层上形成一层光致抗蚀剂。 光致抗蚀剂层的一部分暴露于辐射波。 一些辐射波在曝光期间被抗反射材料吸收。

公开(公告)号：US07659630B2

公开(公告)日：2010-02-09

申请号：US11841180

申请日：2007-08-20

申请人： Zhiping Yin ,  Mark E. Jost

发明人： Zhiping Yin ,  Mark E. Jost

IPC分类号： H01L21/31

CPC分类号： H01L21/76849 ,  H01L21/76801 ,  H01L21/76867

摘要： The present invention relates to metallic interconnect having an interlayer dielectric thereover, the metallic interconnect having an upper surface substantially free from oxidation. The metallic interconnect may have an exposed upper surface thereon that is passivated by a nitrogen containing compound.

摘要翻译： 本发明涉及在其上具有层间电介质的金属互连，金属互连具有基本上没有氧化的上表面。 金属互连可以在其上具有被含氮化合物钝化的暴露的上表面。

公开(公告)号：US07651951B2

公开(公告)日：2010-01-26

申请号：US11681027

申请日：2007-03-01

申请人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

发明人： Luan Tran ,  William T. Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K. Abatchev ,  Gurtej S. Sandhu ,  D. Mark Durcan

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

公开(公告)号：US07589015B2

公开(公告)日：2009-09-15

申请号：US11698072

申请日：2007-01-26

申请人： Gurtej S. Sandhu ,  Zhiping Yin

发明人： Gurtej S. Sandhu ,  Zhiping Yin

IPC分类号： H01L21/4763

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/0275 ,  H01L21/31144 ,  H01L21/3145 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76832 ,  H01L29/7833 ,  Y10S430/151 ,  Y10S438/952

摘要： Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic process is provided over the first anti-reflective coating, and a photosensitive material is provided above the transparent layer. The photosensitive material is exposed to a source of radiation including the wavelength of light. Preferably, the first anti-reflective coating extends beneath substantially the entire transparent layer. The complex refractive index of the first anti-reflective coating can be selected to maximize the absorption at the first anti-reflective coating to reduce notching of the photosensitive material.

摘要翻译： 公开了使用光刻工艺制造器件的技术。 该方法包括在衬底的表面上提供第一抗反射涂层。 在光刻工艺中使用的光的波长透明的层被提供在第一抗反射涂层上，并且感光材料设置在透明层的上方。 感光材料暴露于包括光的波长的辐射源。 优选地，第一抗反射涂层在基本上整个透明层的下方延伸。 可以选择第一抗反射涂层的复合折射率以使第一抗反射涂层处的吸收最大化，以减少光敏材料的凹陷。