METHOD FOR MANUFACTURING PRINTED CIRCUIT BOARDS

    公开(公告)号:US20240155773A1

    公开(公告)日:2024-05-09

    申请号:US18415774

    申请日:2024-01-18

    申请人: Gebr. Schmid GmbH

    发明人: Christian Schmid

    IPC分类号: H05K3/06 H01L21/67

    摘要: A method of manufacturing printed circuit boards includes some or all of: chemically or electrically applying metallic layers to a substrate; incorporating bores into the substrate; through-contacting the bores incorporated into the substrate; applying a layer from a photoresist to an electrically conducting layer in a masking step; exposing the photoresist while using an exposure mask in an exposing step; removing exposed or unexposed regions of the layer from the photoresist while in regions laying bare the electrically conducting layer in a developing step; removing the laid-bare regions of the electrically conducting layer in an etching step; cleaning the substrate in a rinsing step; and drying the substrate, wherein the substrate for carrying out the developing step and/or the etching step is set in rotation and a developer solution and/or an etching liquid is applied to the rotating substrate by at least one nozzle.

    Method and device for treating silicon wafers
    2.
    发明授权
    Method and device for treating silicon wafers 有权
    处理硅晶片的方法和装置

    公开(公告)号:US08623232B2

    公开(公告)日:2014-01-07

    申请号:US12818853

    申请日:2010-06-18

    申请人: Heinz Kappler

    发明人: Heinz Kappler

    IPC分类号: C03C15/00 C03C25/68

    摘要: A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.

    摘要翻译: 一种用于处理硅晶片的方法和装置。 在第一步骤中,硅晶片(22)沿着连续的水平输送带(12,32)被平坦地输送,并且喷嘴(20)等从顶部将蚀刻溶液(21)喷射到晶片上以将它们纹理 ,从下方仅向硅晶片(22)施加少量蚀刻溶液(21)。 在第二步骤中,如在第一步骤中排列的硅晶片(22)仅用蚀刻溶液(35)从下方被润湿以对其进行蚀刻抛光。

    CARRIER FOR A SILICON BLOCK, CARRIER ARRANGEMENT HAVING SUCH A CARRIER AND PROCESS FOR PRODUCING SUCH A CARRIER ARRANGEMENT
    3.
    发明申请
    CARRIER FOR A SILICON BLOCK, CARRIER ARRANGEMENT HAVING SUCH A CARRIER AND PROCESS FOR PRODUCING SUCH A CARRIER ARRANGEMENT 审中-公开
    用于硅块的承载件,具有这种载体的载体安排和用于生成这种载体安排的过程

    公开(公告)号:US20130112185A1

    公开(公告)日:2013-05-09

    申请号:US13810132

    申请日:2011-07-08

    IPC分类号: B28D5/00

    摘要: A carrier (13) for a silicon block (31) is designed to be firmly connected as part of a carrier arrangement (11), together with a lower carrier part (25), to the silicon block (31), and to be moved together therewith for machining by sawing, cleaning or the like. The underside of the carrier (13), which points towards the silicon block (31), has a plurality of channels (29), as does the lower carrier part (25) bonded thereto, the channels (29) in each case lying one above another. Water is introduced into the channels (29) in the carrier (13) from above and can run through sawing slots in the lower carrier part (25) between the wafers of the sawn-up silicon block (31) for cleaning purposes.

    摘要翻译: 用于硅块(31)的载体(13)被设计成作为载体装置(11)的一部分与下载体部分(25)一起牢固地连接到硅块(31)并被移动 一起用于通过锯切,清洁等进行机械加工。 指向硅块(31)的载体(13)的下侧具有多个通道(29),下部载体部分(25)也与其结合,通道(29)在每种情况下都位于一个 高于另一个。 水从上方引入载体(13)中的通道(29)中,并且可以穿过锯切硅块(31)的晶片之间的下部载体部分(25)中的锯切槽,以进行清洁。

    Method for the Selective Doping of Silicon and Silicon Substrate Treated Therewith
    5.
    发明申请
    Method for the Selective Doping of Silicon and Silicon Substrate Treated Therewith 有权
    用于处理硅和硅衬底的选择性掺杂的方法

    公开(公告)号:US20110114168A1

    公开(公告)日:2011-05-19

    申请号:US12903804

    申请日:2010-10-13

    申请人: Dirk Habermann

    发明人: Dirk Habermann

    IPC分类号: H01L31/0224 H01L31/0216

    摘要: A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.

    摘要翻译: 用于在硅中制造pn结的硅衬底(1)的硅的选择性掺杂的方法的特征在于以下步骤:a)用硅掺杂剂(2)提供硅衬底(1)的表面, 基于磷,b)加热用于在硅表面上产生磷硅酸盐玻璃(2)的硅衬底(1),其中磷作为第一掺杂(3)扩散到硅中,c)施加掩模(4) )覆盖磷酸硅玻璃(2),覆盖稍后被高度掺杂的区域(5),d)去除非掩蔽区域中的磷硅酸盐玻璃(2),e)从磷中去除掩模(4) 硅酸盐玻璃(2),f)再次加热用于将磷从磷硅酸盐玻璃(2)进一步扩散到硅中作为用于产生高掺杂区(5)的第二掺杂,g); 从硅中完全除去磷酸硅玻璃(2)。

    Device and method for treating the surfaces of substrates
    6.
    发明授权
    Device and method for treating the surfaces of substrates 有权
    用于处理基材表面的装置和方法

    公开(公告)号:US07862661B2

    公开(公告)日:2011-01-04

    申请号:US12138125

    申请日:2008-06-12

    申请人: Heinz Kappler

    发明人: Heinz Kappler

    IPC分类号: B05D1/28

    摘要: The invention relates to a device for treating the surfaces of silicon wafers, comprising transport rollers for transporting the silicon wafer, and at least one conveyor device which wets the surface of the silicon wafer with an aqueous medium on a transport plane which is determined by the transport rollers. The conveyor device is configured such that it can apply the process medium to the surface of the silicon wafer, which is oriented in a downward manner and which is arranged on the transport plane. Several suction pipes for suctioning gaseous or mist-like distributed process mediums from the area surrounding the conveyor device are provided. The suction pipes are arranged in the vertical direction below the transport plane.

    摘要翻译: 本发明涉及一种用于处理硅晶片表面的装置,包括用于输送硅晶片的输送辊和至少一个输送装置,该输送装置用输送平面上的水性介质润湿硅晶片的表面,该输送装置由 运输辊。 输送装置被配置成使得其可以将处理介质施加到硅晶片的表面,该硅晶片的表面以向下的方式定向并且布置在输送平面上。 提供了用于从输送装置周围的区域抽吸气态或雾状分布式处理介质的多个吸管。 吸入管沿着输送平面下方的垂直方向排列。

    Apparatus for treating plate-shaped articles
    7.
    发明授权
    Apparatus for treating plate-shaped articles 失效
    用于处理板形文章的装置

    公开(公告)号:US5154772A

    公开(公告)日:1992-10-13

    申请号:US545390

    申请日:1990-06-27

    IPC分类号: B23K3/06 H05K3/00

    摘要: In an apparatus for treating plate-shaped articles in a liquid medium including a bath containing the liquid medium with gap-like inlet and outlet openings arranged beneath the liquid level and a conveying device for conveying the plate-shaped articles along a substantially flat path of conveyance through the inlet and outlet openings and through the liquid medium in the bath, in order to reduce the loss of liquid from the bath, it is proposed that the inlet and outlet openings comprise sealing elements which are movable from a closed to an open position as the plate-shaped articles pass through them and which are furthermore of such design that the gap created by the sealing elements in their open position is substantially adaptable in height and width to the cross-section of the articles passing through it.

    摘要翻译: 一种用于处理液体介质的液体介质的设备,该液体介质包括含有液体介质的浴,所述液体介质具有布置在液面下方的间隙形入口和出口开口;以及传送装置,用于沿着基本平坦的路径传送板状物品 通过入口和出口开口并通过浴中的液体介质的输送,为了减少液体从浴中的损失,提出了入口和出口开口包括可从闭合位置移动到打开位置的密封元件 因为板状制品穿过它们,并且还具有这样的设计,使得由密封元件在其打开位置产生的间隙在通过其的制品的横截面上在高度和宽度上基本适应。

    Retaining device for thin, planar substrates
    8.
    发明授权
    Retaining device for thin, planar substrates 有权
    用于薄平面基板的保持装置

    公开(公告)号:US08534449B2

    公开(公告)日:2013-09-17

    申请号:US13444984

    申请日:2012-04-12

    IPC分类号: B65G49/02 B65G49/05

    CPC分类号: H01L21/67706 H01L21/67721

    摘要: A retaining device for printed circuit boards is of a frame-like form, with transporting carriages arranged on the outer longitudinal sides and intended for transporting the retaining device, a retaining frame of the retaining device for the substrates being arranged between the transporting carriages. The retaining frame is mounted height-adjustably on the transporting carriages and so a substrate restrained in it can be lowered or raised during the treatment.

    摘要翻译: 用于印刷电路板的保持装置是框架形式,其中输送托架布置在外纵向侧并且用于运输保持装置,用于基板的保持装置的保持框架布置在运送托架之间。 保持架高度可调节地安装在运输车架上,因此在处理期间可以降低或升高被约束的基板。

    METHOD FOR MACHINING THE SURFACE OF A WAFER FOR PRODUCING A SOLAR CELL, AND WAFER
    9.
    发明申请
    METHOD FOR MACHINING THE SURFACE OF A WAFER FOR PRODUCING A SOLAR CELL, AND WAFER 审中-公开
    用于加工用于生产太阳能电池的波形表面的方法和方法

    公开(公告)号:US20110232751A1

    公开(公告)日:2011-09-29

    申请号:US13154539

    申请日:2011-06-07

    申请人: Dirk Habermann

    发明人: Dirk Habermann

    IPC分类号: H01L31/0224 H01L31/18

    摘要: In a method for the treatment of the surface of a wafer for producing a solar cell, onto which wafer an antireflection and passivation layer has been applied onto a p-doped layer in a step preceding the method, the surface is treated in a processing step and then a subsequent metallization on the surface of the wafer for producing contacts for the solar cell takes place. This processing step is for passivation or for removal of the p-doped layer in the region of disturbances such as scratches, defect sites, pinholes and inhomogeneous regions in the antireflection and passivation layer. It is thus possible to avoid metal depositions at these disturbances.

    摘要翻译: 在该方法中,为了制造太阳能电池的晶片的表面的处理方法,在该方法中的步骤中,在其上将抗反射和钝化层施加到p掺杂层上的表面上,在处理步骤 然后进行用于生产用于太阳能电池的触点的晶片表面上随后的金属化。 该处理步骤用于在抗反射和钝化层中的干扰区域中的钝化或去除p掺杂层,例如划痕,缺陷位点,针孔和不均匀区域。 因此,可以避免在这些扰动下的金属沉积。