公开(公告)号：US20150158056A1

公开(公告)日：2015-06-11

申请号：US14098713

申请日：2013-12-06

申请人： SEMATECH, Inc.

发明人： Abbas RASTEGAR

IPC分类号： B08B7/02 ,  B08B7/04 ,  B08B3/12 ,  B08B7/00

CPC分类号： B08B7/026 ,  B08B3/12 ,  B08B7/0035 ,  H01L21/67057 ,  H01L21/67115

摘要： A cleaning tool facilitating removal of particles from a surface is provided which includes an acoustic wave generator and one or more light-emitting diodes. The acoustic wave generator, which is configured to direct acoustic waves towards the surface to be cleaned, may include an acoustic transducer that facilitates generating the acoustic waves, and an acoustic coupler substrate through which the acoustic waves propagate. The light-emitting diode(s), which is configured to direct light towards the surface to be cleaned, is coupled to the acoustic coupler substrate of the acoustic wave generator. The acoustic wave generator and the light-emitting diode(s) are spaced from the surface to be cleaned, and are configured to selectively concurrently direct overlapping, at least partially, acoustic waves and light energy towards the surface to facilitate removal of particles by breaking bonds between the particles and the surface.

摘要翻译： 提供了一种便于从表面除去颗粒的清洁工具，其包括声波发生器和一个或多个发光二极管。 声波发生器被配置成将声波引向待清洁的表面，可以包括有助于产生声波的声学换能器以及声波传播通过声学耦合器衬底。 配置为将光引向待清洁表面的发光二极管耦合到声波发生器的声耦合器衬底。 声波发生器和发光二极管与要清洁的表面间隔开，并且被配置为选择性地同时地向表面重叠至少部分地将声波和光能重叠，以便通过断开来去除颗粒 颗粒与表面之间的结合。

公开(公告)号：US20150062546A1

公开(公告)日：2015-03-05

申请号：US14537106

申请日：2014-11-10

申请人： SEMATECH, INC.

发明人： Abbas RASTEGAR

IPC分类号： G03F7/20 ,  H01L21/67

CPC分类号： G03F7/70916 ,  G03F1/66 ,  G03F1/68 ,  G03F7/70841 ,  H01L21/6719 ,  Y10S269/903

摘要： An apparatus is provided for protecting a surface of interest from particle contamination, and particularly, during transitioning of the surface between atmospheric pressure and vacuum. The apparatus includes a chamber configured to receive the surface, and a protector plate configured to reside within the chamber with the surface, and inhibit particle contamination of the surface. A support mechanism is also provided suspending the protector plate away from an inner surface of the chamber. The support mechanism holds the protector plate within the chamber in spaced, opposing relation to the surface to provide a gap between the protector plate and the surface which presents a diffusion barrier to particle migration into the gap and onto the surface, thereby inhibiting particle contamination of the surface.

摘要翻译： 提供了一种用于保护感兴趣的表面免受颗粒污染的装置，特别是在大气压力和真空之间的表面过渡期间。 所述设备包括被配置为容纳所述表面的室，以及被配置成与所述表面一起驻留在所述室内的保护板，并且抑制所述表面的颗粒污染。 还提供了一种支撑机构，其将保护板悬挂在室的内表面之外。 支撑机构将保护板保持在腔内与表面间隔开的相对关系，以在保护板和表面之间提供间隙，该间隙对于颗粒迁移到间隙中并在表面上具有扩散阻挡，从而抑制颗粒污染 表面。

公开(公告)号：US08865376B2

公开(公告)日：2014-10-21

申请号：US13790288

申请日：2013-03-08

申请人： Sematech, Inc. ,  Intel Corporation

发明人： Vibhu Jindal ,  Frank Goodwin ,  Patrick A. Kearney ,  Eric M. Panning

IPC分类号： G03F1/22 ,  G03F1/24 ,  G03F1/68

CPC分类号： G03F1/22

摘要： Methods are provided for fabricating a process structure, such as a mask or mask blank. The methods include, for instance: providing a silicon substrate; forming a multi-layer, extreme ultra-violet lithography (EUVL) structure over the silicon substrate; subsequent to forming the multi-layer EUVL structure over the crystalline substrate, reducing a thickness of the silicon substrate; and attaching a low-thermal-expansion material (LTEM) substrate to one of the multi-layer EUVL structure, or the reduced silicon substrate. In one implementation, the silicon substrate is a silicon wafer with a substantially defect-free surface upon which the multi-layer EUVL structure is formed. The multi-layer EUVL structure may include multiple bi-layers of a first material and a second material, as well as a capping layer, and optionally, an absorber layer, where the absorber layer is patternable to facilitating forming a EUVL mask from the process structure.

摘要翻译： 提供了用于制造诸如掩模或掩模坯料的工艺结构的方法。 所述方法包括例如：提供硅衬底; 在硅衬底上形成多层，极紫外光刻（EUVL）结构; 随后在晶体衬底上形成多层EUVL结构，减小硅衬底的厚度; 以及将低热膨胀材料（LTEM）衬底附接到多层EUVL结构之一或还原硅衬底。 在一个实施方案中，硅衬底是具有基本无缺陷表面的硅晶片，在其上形成多层EUVL结构。 多层EUVL结构可以包括第一材料和第二材料的多个双层，以及覆盖层和任选的吸收层，其中吸收层可图案化以便于从该过程形成EUVL掩模 结构体。

公开(公告)号：US20140183597A1

公开(公告)日：2014-07-03

申请号：US13729592

申请日：2012-12-28

申请人： SEMATECH, INC.

发明人： Rinus Tek Po LEE ,  Tae Woo KIM ,  Man Hoi WONG ,  Richard HILL

IPC分类号： H01L29/205

CPC分类号： H01L29/205 ,  H01L21/28575 ,  H01L29/452 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66522

摘要： Semiconductor structures having a first layer including an n-type III-V semiconductor material and a second layer including an M(InP)(InGaAs) alloy, wherein M is selected from Ni, Pt, Pd, Co, Ti, Zr, Y, Mo, Ru, Ir, Sb, In, Dy, Tb, Er, Yb, and Te, and combinations thereof, are disclosed. The semiconductor structures have a substantially planar interface between the first and second layers. Methods of fabricating semiconductor structures, and methods of reducing interface roughness and/or sheet resistance of a contact are also disclosed.

摘要翻译： 具有包括n型III-V半导体材料的第一层和包括M（InP）（InGaAs）合金）的第二层的半导体结构，其中M选自Ni，Pt，Pd，Co，Ti，Zr，Y， Mo，Ru，Ir，Sb，In，Dy，Tb，Er，Yb和Te及其组合。 半导体结构在第一和第二层之间具有基本平坦的界面。 还公开了制造半导体结构的方法，以及降低接触面的界面粗糙度和/或薄层电阻的方法。

公开(公告)号：US08673746B2

公开(公告)日：2014-03-18

申请号：US13086009

申请日：2011-04-13

申请人： Joel Myron Barnett ,  Richard James William Hill

发明人： Joel Myron Barnett ,  Richard James William Hill

IPC分类号： H01L21/306

CPC分类号： H01L21/306 ,  H01L21/2254 ,  H01L21/2258 ,  H01L23/291 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention includes methods directed to improved processes for producing a monolayer of sulfur on the surface of a semiconductor. As a surface layer, it functions to passivate the surface; if annealed, it provides a doping element.

摘要翻译： 本发明包括用于在半导体表面上制备单层硫的改进方法的方法。 作为表面层，其功能是钝化表面; 如果退火，则提供掺杂元素。

公开(公告)号：US20140053868A1

公开(公告)日：2014-02-27

申请号：US13592276

申请日：2012-08-22

申请人： Abbas Rastegar ,  Arun John Kadaksham

发明人： Abbas Rastegar ,  Arun John Kadaksham

IPC分类号： H01L21/02 ,  B08B3/12

CPC分类号： H01L21/02057 ,  B08B3/102 ,  B08B3/12 ,  B08B2203/0288 ,  G03F1/82 ,  H01L21/02052 ,  H01L21/67028

摘要： Embodiments of the present disclosure relate to methods and apparatus for reduction of particle defects from a semiconductor surface, such as for example the reduction of sub 100 micron defects. Methods and apparatus of the present disclosure are particularly useful in the manufacture of semiconductor devices when employing extreme ultraviolet photolithography. In some embodiments, a fluid stream is provided through a nozzle at conditions such that cavitation bubbles are formed, the cavitation bubbles being present in a stable cavitation state or regime. The fluid stream is flowed over at least a portion of the surface. A shockwave is generated or created in the fluid stream. The shockwave momentarily increases acoustic pressure in the fluid causing the cavitation bubbles to collapse and produce a jet or pulse of high fluid flow which removes particle defects from the surface.

摘要翻译： 本公开的实施例涉及用于从半导体表面减少颗粒缺陷的方法和装置，例如减少亚100微米缺陷。 本公开的方法和装置在采用极紫外光刻法时制造半导体器件时特别有用。 在一些实施例中，在形成空化气泡的条件下通过喷嘴提供流体流，空化气泡以稳定的空化状态或状态存在。 流体流在表面的至少一部分上流动。 在流体流中产生或产生冲击波。 冲击波暂时增加流体中的声压，导致气蚀气泡塌陷并产生高流体流的射流或脉冲，从表面去除颗粒缺陷。

公开(公告)号：US20130340838A1

公开(公告)日：2013-12-26

申请号：US13531652

申请日：2012-06-25

申请人： Abbas RASTEGAR

发明人： Abbas RASTEGAR

IPC分类号： F15D1/02

CPC分类号： B08B3/12 ,  B08B2203/0288 ,  Y10T137/0391 ,  Y10T137/206

摘要： Systems and methods are provided facilitating a steaming fluid flow utilizing acoustic waves. A system includes an acoustic wave generator and an acoustic coupler associated with the acoustic wave generator and coupling acoustic waves generated by the acoustic wave generator into a fluid. The acoustic coupler includes one or more acoustic coupling lenses, which direct the acoustic waves into the fluid and facilitate, at least in part, a streaming fluid flow in a common direction. In an enhanced embodiment, the common flow direction is at an angle to a direction acoustic waves are generated, and the acoustic coupling lens(es), in directing the acoustic waves into the fluid, redirects the acoustic waves from the direction of acoustic wave generation. The acoustic wave generator generates the acoustic waves in the megahertz or gigahertz range, for example, with a frequency of 20 MHz or higher.

摘要翻译： 提供了利用声波促进蒸汽流体流动的系统和方法。 一种系统包括声波发生器和与声波发生器相关联的声耦合器，并将由声波发生器产生的声波耦合到流体中。 声耦合器包括一个或多个声耦合透镜，其将声波引导到流体中，并且至少部分地促进在相同方向上的流动流体流。 在增强实施例中，公共流动方向与产生声波的方向成成角度，并且声耦合透镜在将声波引导到流体中时将声波从声波产生的方向重新定向 。 声波发生器以兆赫或千兆赫兹范围产生声波，例如频率为20MHz或更高。

公开(公告)号：US20110248384A1

公开(公告)日：2011-10-13

申请号：US12759489

申请日：2010-04-13

申请人： Matt Malloy

发明人： Matt Malloy

IPC分类号： H01L21/306 ,  B05C11/02 ,  H01L29/00 ,  B05D5/12

CPC分类号： H01L21/306 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/30

摘要： Methods, systems, and devices which result from, or facilitates, convenient processing of partial dies of a semiconductor chip in a lithography process are disclosed. Embodiments utilize an exposure through an imprint-style template which does not come in physical contact with the partial die. In one embodiment, a semiconductor process is disclosed which has at least one full die and at least one partial die. The semiconductor chip is fabricated, in part, by using an etching process which utilizes an imprint template configured to be exposed to the at least one full die when the imprint template is in contact with resist which has been dispensed onto the at least one full die. Further, at least one partial die of the semiconductor chip is configured to be exposed to the imprint template without the template contacting resist dispensed onto the at least one partial die.

摘要翻译： 公开了在光刻工艺中由半导体芯片的部分裸片的方便处理的方法，系统和装置。 实施例利用不与部分模具进行物理接触的压印式模板进行曝光。 在一个实施例中，公开了一种具有至少一个完整管芯和至少一个部分管芯的半导体工艺。 部分地通过使用蚀刻工艺来制造半导体芯片，该蚀刻工艺利用当压印模板与被分配到至少一个完整裸片上的抗蚀剂接触时构造成暴露于至少一个全裸片的印模模板 。 此外，半导体芯片的至少一个部分裸片被配置为暴露于压印模板，而不将模板接触抗蚀剂分配到至少一个部分裸片上。

公开(公告)号：US20110201260A1

公开(公告)日：2011-08-18

申请号：US12707588

申请日：2010-02-17

申请人： Sharath Hosali

发明人： Sharath Hosali

IPC分类号： B24B1/00 ,  B24B7/00

CPC分类号： B24B37/0056 ,  B24B53/007

摘要： Methods and systems for retaining grinding efficiency during a backgrinding process such as, for example, backgrinding of a through-via substrate such as an embedded through silicon via wafer. A grinding fluid may include a chemical agent that is configured to remove accumulated materials from the grinding wheel.

摘要翻译： 用于在后研磨过程中保持研磨效率的方法和系统，例如通孔基底（例如嵌入硅通过晶片）的后研磨。 研磨液可以包括被配置为从砂轮中去除积聚的材料的化学试剂。

公开(公告)号：US07736954B2

公开(公告)日：2010-06-15

申请号：US11467822

申请日：2006-08-28

申请人： Muhammad Mustafa Hussain ,  Naim Moumen ,  Gabriel Gebara ,  Ed Labelle ,  Sidi Lanee ,  Barry Sassman ,  Raj Jammy

发明人： Muhammad Mustafa Hussain ,  Naim Moumen ,  Gabriel Gebara ,  Ed Labelle ,  Sidi Lanee ,  Barry Sassman ,  Raj Jammy

IPC分类号： H01L21/84

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0665 ,  H01L29/0673 ,  Y10S977/887 ,  Y10S977/888

摘要： Methods for fabricating nanoscale features are disclosed. One technique involves depositing onto a substrate, where the first layer may be a silicon layer and may subsequently be etched. A second layer and third layer may be deposited on the etch first layer, followed by the deposition of a silicon cap. The second and third layer may be etched, exposing edges of the second and third layers. The cap and first layer may be removed and either the second or third layer may be etched, creating a nanoscale pattern.

摘要翻译： 公开了制造纳米级特征的方法。 一种技术涉及沉积到衬底上，其中第一层可以是硅层并随后被蚀刻。 第二层和第三层可以沉积在蚀刻第一层上，随后沉积硅帽。 可以蚀刻第二层和第三层，暴露第二层和第三层的边缘。 盖和第一层可以被去除并且可以蚀刻第二层或第三层，产生纳米尺度图案。