公开(公告)号：US20190135619A1

公开(公告)日：2019-05-09

申请号：US16087970

申请日：2017-03-21

Applicant: FRAUNHOFFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Inventor： Hans, Joachim QUENZER ,  Vanessa STENCHLY

IPC: B81C1/00 ,  G02B26/08

CPC classification number: B81C1/00317 ,  B81B2201/042 ,  B81B2203/0384 ,  B81C1/00595 ,  B81C1/00634 ,  B81C2203/0127 ,  B81C2203/031 ,  B81C2203/033 ,  G02B7/003 ,  G02B26/0833

Abstract: The invention relates to a method for producing optical components, wherein a first contact surface is formed by bringing a deformation element into contact with a carrier; and a second contact surface is formed by applying a functional element to the deformation element; said second contact surface at least partially overlapping the first contact surface, so that a deformation zone is formed by the area of the deformation element that lies between the overlapping areas of the two contact surfaces, wherein at least one portion of the deformation zone is heated and deformed in such a way that the functional element is deflected, in particular, shifts and/or tilts, and the functional element is joined with the deformation element during the process step of applying the functional element to the deformation element and/or during the process step of heating and deforming the deformation zone.

公开(公告)号：US20170252855A1

公开(公告)日：2017-09-07

申请号：US15599714

申请日：2017-05-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masakazu Fukumitsu ,  Shuhei Yamada

IPC: B23K20/02 ,  H01L41/313 ,  B06B1/06 ,  H01L41/09 ,  B23K20/16 ,  B23K20/22

CPC classification number: B23K20/023 ,  B06B1/06 ,  B06B1/0603 ,  B06B1/0648 ,  B23K20/16 ,  B23K20/22 ,  B23K2101/40 ,  B81B2201/0242 ,  B81C1/00269 ,  B81C2203/033 ,  B81C2203/035 ,  H01L21/187 ,  H01L41/09 ,  H01L41/313 ,  H03H3/02 ,  H03H9/0595 ,  H03H9/1035 ,  H03H2003/026

Abstract: Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.

公开(公告)号：US20230304879A1

公开(公告)日：2023-09-28

申请号：US17702596

申请日：2022-03-23

Applicant: General Electric Company

Inventor： Robert James MacDonald ,  Yizhen Lin ,  Nicholas G. Yost ,  David Richard Esler

IPC: G01L5/173 ,  B81B7/00 ,  B81C1/00

CPC classification number: G01L5/173 ,  B81B7/0019 ,  B81C1/00817 ,  B81B2201/0292 ,  B81C2203/033

Abstract: A sensing element having improved temperature and pressure characteristics including at least one acoustic sensing device formed mainly from a silicon substrate and having a microelectromechanical system without the use of quartz or polymer, wherein the at least one acoustic sensing device detects a torque associated with a metal object subject to said torque, and a high temperature bonding surface for directly connecting the sensing element to the metal object via a high temperature connecting processes comprising at least one of soldering, metalizing and/or brazing, without the need for a polymer adhesive. Related sensors using such sensing elements and methods are also disclosed herein.

公开(公告)号：US20240101412A1

公开(公告)日：2024-03-28

申请号：US18460760

申请日：2023-09-05

Applicant: Robert Bosch GmbH ,  Carl Zeiss SMT GmbH

Inventor： Joachim Friedl ,  Jan Stiedl

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81C1/00666 ,  B81B2201/042 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2203/033 ,  G02B26/0833

Abstract: The invention relates to a device (100) for supporting one or more MEMS components (160), comprising a base component (110), which substantially consists of a first material with a first coefficient of expansion α1, an interposer (120), which is integrally bonded to the base component (110) in one or more first connection regions (140) and substantially consists of a second material with a second coefficient of expansion α2, and a support substrate (130), which is integrally bonded to the interposer (120) in one or more second connection regions (150) and substantially consists of a third material with a third coefficient of expansion α3, wherein the support substrate (130) is configured to support the one or more MEMS components (160), and for the coefficients of expansion the following holds true: α1>α2≥α3, preferably α1>α2=α3. The invention also relates to a system (105) comprising a device (100) according to the invention and the one or more MEMS components (160), and to a method for producing a device (100) according to the invention.

公开(公告)号：US20150048509A1

公开(公告)日：2015-02-19

申请号：US14459329

申请日：2014-08-14

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Ranganathan NAGARAJAN ,  Fu Chuen TAN ,  Kia Hwee Samuel LOW ,  Chun Hoe YIK ,  Jiaqi WU ,  Jingze TIAN ,  Pradeep Ramachandramurthy YELEHANKA ,  Rakesh KUMAR

IPC: H01L21/18 ,  H01L21/3205 ,  H01L23/482

CPC classification number: H01L21/185 ,  B81B7/0006 ,  B81C1/00238 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/033 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L23/4827 ,  H01L24/05 ,  H01L24/26 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05686 ,  H01L2224/2908 ,  H01L2224/29124 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32502 ,  H01L2224/85805 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/00012

Abstract: A wafer bonding layer and a process for using the same for bonding wafers are presented. The wafer bonding process includes providing a first wafer, providing a second type wafer and providing a water bonding layer. The wafer bonding layer is provided separately on a contact surface layer of the first or second wafer as part of a CMOS compatible processing recipe.

Abstract translation: 提出了一种晶片接合层及其用于接合晶片的方法。 晶片接合工艺包括提供第一晶片，提供第二类型晶片并提供水结合层。 作为CMOS兼容处理配方的一部分，晶片接合层分别设置在第一或第二晶片的接触表面层上。