Reference voltage generator circuit such as band gap reference voltage generator circuit, and method of generating reference voltage

    公开(公告)号:US11977405B2

    公开(公告)日:2024-05-07

    申请号:US17596338

    申请日:2021-05-31

    IPC分类号: G05F1/567 G05F3/24 G05F3/26

    CPC分类号: G05F3/245 G05F1/567 G05F3/267

    摘要: A reference voltage generator circuit includes a band gap reference voltage circuit that generates a predetermined reference voltage, and a first correction current generator circuit that generates a first correction current in response to change in temperature. The first correction current generator circuit generates a plurality of voltage peaks in response to the change in temperature in the output voltage of the reference voltage generator circuit by injecting the first correction current into the band gap reference voltage circuit, and output voltage characteristics configuring each of the plurality of voltage peaks are made such that the output voltage varies continuously with respect to the change in temperature. The first correction current generator circuit includes a temperature setting circuit that can change the plurality of temperatures corresponding to each of the plurality of voltage peaks.

    Voltage reference source circuit and low power consumption power supply system

    公开(公告)号:US11966245B2

    公开(公告)日:2024-04-23

    申请号:US17389580

    申请日:2021-07-30

    IPC分类号: G05F3/26 G05F1/46 G05F1/567

    CPC分类号: G05F3/262 G05F1/468 G05F1/567

    摘要: The present disclosure provides a voltage reference source circuit for generating a reference voltage, the voltage reference source circuit comprises a starting circuit, a current generating circuit, and an output voltage reference circuit electrically connected in sequence. The starting circuit provides a starting voltage for the voltage reference source circuit to prevent the voltage reference source circuit from operating in zero state area. The current generating circuit generates a working current for the output voltage reference circuit; and the output voltage reference circuit is used to realize the reference voltage output with zero temperature coefficient according to the working current output by the current generating circuit. A low power consumption power supply system is also disclosed. The voltage reference source circuit and the low power consumption power supply system with the voltage reference source circuit have simple circuit structure, strong anti-noise ability, high stability and high performance.

    Delay circuits and semiconductor devices

    公开(公告)号:US11894850B1

    公开(公告)日:2024-02-06

    申请号:US18180018

    申请日:2023-03-07

    IPC分类号: H03K5/00 H03K5/01 G05F1/567

    摘要: The present disclosure provides a delay circuit and a semiconductor device. The delay circuit includes a delay unit and a linear voltage regulator unit; wherein, the delay unit includes an inverting unit and a power supply control unit, and the inverting unit includes an inverting unit and a power supply control unit. The inversion unit receives an input signal and delays the input signal, and the power supply control unit is used for providing a voltage to the inverting unit according to the power supply control signal; the linear voltage stabilization unit is coupled to the delay unit and outputting the power supply control signal according to a reference voltage. The voltage outputs the power control signal. The present disclosure can accurately control the delay time of the delay unit and improve the delay precision of the delay circuit.

    Power supply circuit having voltage switching function

    公开(公告)号:US11892862B2

    公开(公告)日:2024-02-06

    申请号:US17461585

    申请日:2021-08-30

    发明人: Tatsuya Matano

    IPC分类号: G05F1/567 G05F1/46 H03K17/14

    摘要: Disclosed herein is an apparatus that includes a first reference voltage generator configured to generate a first voltage, a second reference voltage generator configured to generate a second voltage, a detection circuit configured to compare the first voltage with the second voltage to generate a selection signal, and a selection circuit configured to select one of the first and second voltages responsive to the selection signal. The detection circuit is configured to have a hysteresis property in changing a state of the selection signal.

    Bias current with hybrid temperature profile

    公开(公告)号:US11789477B1

    公开(公告)日:2023-10-17

    申请号:US17901244

    申请日:2022-09-01

    IPC分类号: G05F3/16 G05F1/567 G05F3/26

    CPC分类号: G05F1/567 G05F3/16 G05F3/262

    摘要: Aspects of the present disclosure include a hybrid circuit, including a first current sink configured to sink a zero temperature coefficient (ZTC) current, a second current sink configured to sink a positive temperature coefficient (PTC) current, a first transistor configured to provide a first current, a second transistor configured to provide a second current, a third transistor configured to provide a third current mirroring the ZTC current, a fourth transistor configured to provide a sum current of the first current and the third current, and a current mirror configured provide a hybrid current mirroring the sum current.

    Voltage reference temperature compensation circuits and methods

    公开(公告)号:US11755051B2

    公开(公告)日:2023-09-12

    申请号:US17873281

    申请日:2022-07-26

    IPC分类号: G05F1/46 G05F3/26 G05F1/567

    CPC分类号: G05F3/262 G05F1/468 G05F1/567

    摘要: Systems and methods are provided for generating a temperature compensated reference voltage. A temperature compensation circuit may include a proportional-to-absolute temperature (PTAT) circuit, and a complementary-to-absolute temperature (CTAT) circuit, with the PTAT circuit and the CTAT circuit including at least one common metal-oxide-semiconductor field-effect transistor (MOSFET) and being configured to collectively generate a reference voltage in response to a regulated current input. The PTAT circuit may be configured to produce an increase in magnitude of the reference voltage with an increase of temperature, and the CTAT circuit may be configured to generated a decrease in magnitude of the reference voltage with the increase of temperature, wherein the increase in magnitude of the reference voltage produced by the PTAT circuit is at least partially offset by the decrease in magnitude of the reference voltage produced by the CTAT circuit.