利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

738 条记录 (耗时 0.021 秒)

    Stacked monolithic multijunction solar cell
    5.
    发明授权
    Stacked monolithic multijunction solar cell 有权

    公开(公告)号：US11728453B2

    公开(公告)日：2023-08-15

    申请号：US17373199

    申请日：2021-07-12

    申请人： AZUR SPACE Solar Power GmbH

    发明人： Daniel Fuhrmann ,  Rosalinda Van Leest ,  Gregor Keller ,  Matthias Meusel

    IPC分类号： H01L31/0725 ,  H01L31/043 ,  H01L31/0735 ,  H01L31/074

    CPC分类号： H01L31/0725 ,  H01L31/043 ,  H01L31/074 ,  H01L31/0735

    摘要： A stacked monolithic multijunction solar cell, which includes a first subcell having a p-n junction with an emitter layer and a base layer, the thickness of the emitter layer being less than the thickness of the base layer at least by a factor of ten, and the first subcell comprising a substrate having a semiconductor material from the groups III and V or a substrate from the group IV, and which further includes a second subcell arranged on the first subcell and a third subcell arranged on the second subcell, the two subcells each including an emitter layer and a base layer, and a tunnel diode and a back side field layer each being formed between the subcells, the thickness of the emitter layer being greater than the thickness of the base layer in each case between the second subcell and in the third subcell.

    MULTIJUNCTION METAMORPHIC SOLAR CELLS
    7.
    发明公开
    MULTIJUNCTION METAMORPHIC SOLAR CELLS 审中-公开

    公开(公告)号：US20230207717A1

    公开(公告)日：2023-06-29

    申请号：US18156733

    申请日：2023-01-19

    申请人： SolAero Technologies Corp.

    发明人： Zachary Bittner ,  John Hart ,  Daniel Derkacs

    IPC分类号： H01L31/0725 ,  H01L31/18 ,  H01L31/074

    CPC分类号： H01L31/0725 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1808 ,  H01L31/074

    摘要： A multijunction solar cell in accordance with an example implementation includes a growth substrate; a first solar subcell disposed over or in the growth substrate; a tunnel diode disposed over the first solar subcell; and a grading interlayer directly disposed over the tunnel diode; a sequence of layers of semiconductor material forming a solar cell disposed over the grading interlayer comprising a plurality of solar subcells. The multijunction solar cell also includes a first wafer bowing inhibition layer disposed directly over an uppermost sublayer of the grading interlayer, such bowing inhibition layer having an in-plane lattice constant greater than the in-plane lattice constant of the uppermost sublayer of the grading interlayer. A second wafer bowing inhibition layer is disposed directly over the first wafer bowing inhibition layer.

    OPTOELECTRONIC DEVICE
    8.
    发明公开
    OPTOELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230197869A1

    公开(公告)日：2023-06-22

    申请号：US18052325

    申请日：2022-11-03

    申请人： OXFORD UNIVERSITY INNOVATION LIMITED

    发明人： HENRY JAMES SNAITH ,  EDWARD JAMES WILLIAM CROSSLAND ,  ANDREW HEY ,  JAMES BALL ,  MICHAEL LEE ,  PABLO DOCAMPO

    IPC分类号： H01L31/036 ,  C23C14/06 ,  H10K30/15 ,  H10K85/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/18

    CPC分类号： H01L31/036 ,  C23C14/06 ,  H01L31/0725 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/022466 ,  H01L31/035272 ,  H10K30/15 ,  H10K30/151 ,  H10K85/00 ,  H10K71/40 ,  Y02E10/549

    摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.