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公开(公告)号：US20240154390A1
公开(公告)日：2024-05-09
申请号：US18574646
申请日：2021-07-09
发明人： Takaya MORIKAWA , Kosuke SHINOHARA
CPC分类号： H01S5/2231 , H01S5/2275 , H01S5/3211 , H01S5/34353
摘要： A semiconductor optical element of the present disclosure includes: a ridge structure provided on a first-conductivity-type semiconductor substrate and including a first-conductivity-type cladding layer and an active layer; a buried structure provided on both side surfaces of the ridge structure; a second-conductivity-type cladding layer and a second-conductivity-type contact layer provided on a surface of the buried structure; a second-conductivity-type ridge upper cladding layer provided above the ridge structure; a recess having a bottom surface formed of an upper surface of the second-conductivity-type ridge upper cladding layer and side surfaces formed of the second-conductivity-type cladding layer and the second-conductivity-type contact layer; a mesa structure having both side surfaces formed by a mesa extending from the second-conductivity-type contact layer to the first-conductivity-type semiconductor substrate.
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公开(公告)号：US20230387664A1
公开(公告)日：2023-11-30
申请号：US18232265
申请日：2023-08-09
发明人： Hiroyuki HAGINO , Tsuyoshi Tanaka
CPC分类号： H01S5/222 , H01S5/2231
摘要： A semiconductor laser element includes: a substrate having a projection at an upper face thereof; a first semiconductor layer; a light emission layer; a second semiconductor layer; and a low refractive index part having a refractive index lower than that of the first semiconductor layer. The second semiconductor layer has a ridge part for guiding laser light generated in the light emission layer. An angle between a side face of the ridge part and the waveguiding direction is larger than a limit angle defined by an effective refractive index on each of an inner side of the ridge part and an outer side of the ridge part. The low refractive index part is disposed between an active layer of the light emission layer and the projection of the substrate, and on the outer side of the side face at least where the width of the ridge part is small.
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公开(公告)号：US11658463B2
公开(公告)日：2023-05-23
申请号：US17067451
申请日：2020-10-09
申请人： Sony Corporation
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/183 , H01S5/22 , H01S5/343 , H01S5/223 , H01S5/187 , B82Y20/00 , H01S5/042 , H01S5/02251 , H01S5/02253 , H01S5/18 , H01S5/125
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02251 , H01S5/02253 , H01S5/04252 , H01S5/125 , H01S5/18 , H01S5/187 , H01S5/18311 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/04254 , H01S5/18338 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
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公开(公告)号：US11456576B2
公开(公告)日：2022-09-27
申请号：US16927950
申请日：2020-07-13
发明人： Hitoshi Sakuma , Kazumasa Kishimoto
摘要： A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.
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公开(公告)号：US20220069547A1
公开(公告)日：2022-03-03
申请号：US17417278
申请日：2019-10-30
申请人： ROHM CO., LTD.
发明人： Yuki HIROKAWA , Yuji ISHIDA , Yoshio NISHIMOTO
摘要： A semiconductor laser element includes a semiconductor laminated structure that has a substrate, an n type cladding layer disposed at a front surface side of the substrate, an active layer disposed at an opposite side of the n type cladding layer to the substrate, and p type cladding layers disposed at an opposite side of the active layer to the n type cladding layer. The active layer includes a quantum well layer having a tensile strain for generating TM mode oscillation and the n type cladding layer and the p type cladding layers are respectively constituted of AlGaAs layers.
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公开(公告)号：US10862275B2
公开(公告)日：2020-12-08
申请号：US16227834
申请日：2018-12-20
发明人： Kazuo Fukagai
摘要： A semiconductor device includes a first pair of nitride semiconductor regions, and a current confinement region which includes a first portion, a second portion disposed on a side of the first portion, and a third portion disposed on another side of the first portion. A width of the second portion is larger than a width of the first portion, the width of the second portion is larger than a width between the first pair of nitride semiconductor regions, and both ends of the second portion are covered by the first pair of nitride semiconductor regions, respectively.
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公开(公告)号：US10833481B2
公开(公告)日：2020-11-10
申请号：US16235684
申请日：2018-12-28
申请人： Intel Corporation
IPC分类号： H01S5/34 , H01S5/343 , H01S5/20 , H04B10/40 , H01S5/10 , H01S5/223 , H01S5/042 , H01S5/40 , H01S5/022 , H01S5/02 , H01S5/00
摘要： Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.
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公开(公告)号：US20200295533A1
公开(公告)日：2020-09-17
申请号：US16650766
申请日：2018-09-20
申请人： OSRAM OLED GmbH
摘要： The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.
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公开(公告)号：US10665609B2
公开(公告)日：2020-05-26
申请号：US15438820
申请日：2017-02-22
发明人： Utz Herwig Hahn , Marc Seifried
IPC分类号： G02B6/122 , H01L27/12 , H01S5/02 , H01L29/08 , H01L29/04 , H01L29/737 , H01S5/10 , H01S5/323 , H01S5/223 , H01S5/12
摘要： The present invention is notably directed to an electro-optical device. The latter comprises a layer structure with: a silicon substrate; a buried oxide layer over the silicon substrate; a tapered silicon waveguide core over the buried oxide layer, the silicon waveguide core cladded by a first cladding structure; a bonding layer over the first cladding structure; and a stack of III-V semiconductor gain materials on the bonding layer, the stack of III-V semiconductor gain materials cladded by a second cladding structure. The layer structure is configured to optically couple radiation between the stack of III-V semiconductor gain materials and the tapered silicon waveguide core. The first cladding structure comprises a material having: a refractive index that is larger than 1.54 for said radiation; and a bandgap, which, in energy units, is larger than an average energy of said radiation.
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公开(公告)号：US10461504B2
公开(公告)日：2019-10-29
申请号：US16392780
申请日：2019-04-24
发明人： Christopher Watson , Kirill Pimenov , Valery Tolstikhin , Fang Wu , Yury Logvin
摘要： A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.
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