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公开(公告)号：US20240118507A1
公开(公告)日：2024-04-11
申请号：US18545038
申请日：2023-12-19
申请人： NEC Corporation
发明人： Isao TOMITA
IPC分类号： G02B6/42 , H01S5/02251 , H01S5/0239 , H01S5/50 , H04B10/40 , H04B10/61
CPC分类号： G02B6/4292 , G02B6/42 , G02B6/4246 , H01S5/02251 , H01S5/0239 , H01S5/50 , H04B10/40 , H04B10/61 , H01S5/0064
摘要： A pluggable optical connector is configured to be insertable into and removable from an optical communication apparatus, and to be capable of communicating a modulation signal and a data signal with the optical communication apparatus. A wavelength-tunable light source is configured to output an output light and a local oscillation light. An optical transmission unit is configured to output an optical signal generated by modulating the output light in response to the modulation signal. An optical reception unit is configured to demodulate an optical signal received by using the local oscillation light to the data signal. Pluggable optical receptors are configured in such a manner that an optical fiber is insertable into and removable from the pluggable optical receptors, and configured to be capable of outputting the optical signal to the optical fiber and transferring the optical signal received thorough the optical fiber to the optical reception unit.
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公开(公告)号：US20240039250A1
公开(公告)日：2024-02-01
申请号：US18335584
申请日：2023-06-15
CPC分类号： H01S5/50 , H01S5/1014 , H01S5/0285 , H01S5/0206 , H01S2304/04
摘要： The present invention concerns an optoelectronic device D such as a Semiconductor optical amplifier (SOA) working in a continuous wave condition and able to amplify high frequencies optical signals. The optoelectronic device D comprise an active zone I (such as SOA) with a slab (3) in a direct bias working in a continuous wave and a taper zone (II) connected to the active zone (I).
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3.发明公开公开(公告)号：US20240006859A1
公开(公告)日：2024-01-04
申请号：US18468071
申请日：2023-09-15
发明人： Guangcan Chen , Yuanbing Cheng , Yanbo Li
CPC分类号： H01S5/50 , H01S5/0261 , H01S5/3407
摘要： An optical modulation and amplification apparatus, an optical module, an optical network unit, and an optical communication system are provided. The optical modulation and amplification apparatus includes an electric absorption modulator and a semiconductor optical amplifier. The electric absorption modulator and the semiconductor optical amplifier share a same substrate and a same multi-layer material structure. The multi-layer material structure includes, from bottom to top, at least a first quantum well, an electron blocking layer, a second quantum well, and an upper separate confinement layer. The electric absorption modulator is configured to modulate injection light by using the first quantum well, and the semiconductor optical amplifier is configured to amplify the injection light by using the second quantum well.
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公开(公告)号：US20230387666A1
公开(公告)日：2023-11-30
申请号：US18321086
申请日：2023-05-22
申请人： Xuan Sun
发明人： Xuan Sun
CPC分类号： H01S5/50 , H01S5/141 , H01S5/0657 , H01S5/1071 , H01S5/0265 , G02B6/12004 , G02B2006/12121 , G02B2006/1204
摘要： A fully integrated photonic coherent microwave generator includes an external laser cavity on a suitable material waveguide platform (e.g., LiNbO3) operationally integrated with a III-V gain element. Operational components include a tunable high-Q resonator (e.g., LiNbO3 microresonator) and one or more end mirrors to form an integrated semiconductor external-cavity laser. Operationally coupled electrical components enable coherent microwave and phase-locked laser comb outputs as follows. An optical detector converts the beating of generated laser-comb modes into microwaves with a fundamental frequency equal to the free-spectral range fR of the microresonator. The external laser cavity enables high-speed electro-optic modulation of laser modes directly inside the laser cavity. Phase locking of the lasing modes is accomplished via electro-optic modulation and electro-optic comb generation directly inside the laser cavity. Highly coherent microwaves are generated via phase-locked comb-like lasing modes.
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公开(公告)号：US11791437B2
公开(公告)日：2023-10-17
申请号：US16731193
申请日：2019-12-31
申请人： EXALOS AG
发明人： Marcus Dülk , Nicolai Matuschek
CPC分类号： H01L33/0045 , A61B1/0684 , A61B5/0066 , H01L33/10 , H01L33/32 , H01L33/60 , H01S5/50 , H04N9/315
摘要： An amplified spontaneous emission, ASE, source device combining a superluminescent light emitting diode, SLED, with a semiconductor optical amplifier, SOA, the SLED and SOA being arranged in series so that the SLED acts as a seed and the SOA acts as a broadband amplifier for the SLED output. Both SLED and SOA have a structure made up of a succession of epitaxial semiconductor layers which form a waveguide comprising a core of active region layers and surrounding cladding layers. The SLED and SOA confinement factors of the SLED and SOA, wherein confinement factor is the percentage of the optical mode power in the active region layers, is designed so that the SLED confinement factor is greater than that of the SOA by at least 20%. This allow higher power outputs, because the SLED power limits imposed by the onset of non-linear effects and catastrophic optical damage can be circumvented.
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公开(公告)号：US11789147B2
公开(公告)日：2023-10-17
申请号：US16834522
申请日：2020-03-30
CPC分类号： G01S17/08 , B23K26/0648 , G01S7/4814 , H01S5/3432 , H01S5/34353 , H01S5/50
摘要： A semiconductor optical amplifier includes: a substrate; a light source unit formed on the substrate; and an optical amplification part that amplifies light propagating in a predetermined direction from the light source unit and emits the amplified light in an emission direction intersecting with the substrate surface. The optical amplification part includes a conductive region extending in the predetermined direction along the substrate surface from the light source unit, and a nonconductive region formed around the conductive region. The conductive region includes a first region extending from the light source unit and having a predetermined width as seen from a direction perpendicular to the substrate surface, and a second region connected to the first region and having a width widened relative to the predetermined width of the first region, the second region being configured to expand the propagation light in a direction intersecting with the predetermined direction.
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公开(公告)号：US11764541B2
公开(公告)日：2023-09-19
申请号：US17220270
申请日：2021-04-01
申请人： Gigaphoton Inc.
CPC分类号： H01S5/0428 , G03F7/70041 , G03F7/70575 , H01S3/2308 , H01S3/2375 , H01S5/0092 , H01S5/0687 , H01S5/06808 , H01S5/509 , H01S5/12 , H01S2301/163
摘要： In a laser system according to a viewpoint of the present disclosure, a first amplifier amplifies first pulsed laser light outputted from a first semiconductor laser system into second pulsed laser light, a wavelength conversion system converts the second pulsed laser light in terms of wavelength into third pulsed laser light, and an excimer amplifier amplifies the third pulsed laser light. The first semiconductor laser system includes a first current controller that controls current flowing through a first semiconductor laser in such a way that first laser light outputted from the first semiconductor laser is caused to undergo chirping and a first semiconductor optical amplifier that amplifies the first laser light into pulsed light. The laser system includes a control section that controls the amount of chirping performed on the first pulsed laser light in such a way that excimer laser light having a target spectral linewidth is achieved.
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8.发明公开公开(公告)号：US20230231629A1
公开(公告)日：2023-07-20
申请号：US18180512
申请日：2023-03-08
发明人： Haruki OGOSHI , Junji YOSHIDA , Yusuke INABA , Tatsuya KIMOTO , Masaki FUNABASHI , Seiji ICHINO , Naoya HOJO , Shigehiro TAKASAKA , Ryuichi SUGIZAKI , Nitidet THUDSALINGKARNSAKUL , Sanguan ANANTATHANASARN
IPC分类号： H04B10/291 , H01S5/50
CPC分类号： H04B10/2916 , H01S5/5027 , H04B10/25
摘要： A light source includes: a seed light source configured to output incoherent seed light with a predetermined bandwidth; and a booster amplifier that is a semiconductor optical amplifier configured to optically amplify the seed light input from a first facet, and output the amplified seed light as amplified light from a second facet, wherein the first facet and the second facet of the booster amplifier are subjected to a reflection reduction treatment, the booster amplifier is configured to operate in a gain saturated state, and relative intensity noise (RIN) and ripple are simultaneously suppressed in the amplified light.
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9.发明公开公开(公告)号：US20230231361A1
公开(公告)日：2023-07-20
申请号：US18067392
申请日：2022-12-16
申请人： II-VI Delaware, Inc.
CPC分类号： H01S5/041 , H01S5/5027 , H01S2303/00 , H01S2302/00
摘要： The present disclosure discloses a miniaturized MOPA structure DPSSL (Diode Pumped Solid State Laser), which comprises a laser oscillator module and a laser amplifier module. The laser oscillator module consists of a seed laser and its collimating system, and the laser amplifier module consists of a laser pump module and a laser gain element. The seed laser with high beam quality is collimated by collimation system, then input into the gain element; the pump laser is pumped into the gain element via end pump or side pump mode. The seed laser beam transmits into the gain medium and is reflected by the interface several times with the “Zigzag” path, which makes the seed laser fully gained and amplified, finally achieving high power and high beam quality laser output.
In this present disclosure, the laser gain material is doped with different rare-earth ion concentrations and processed into different shapes. Some polishing surfaces of the gain material are deposited with different coatings including HR coating and AR coating, on the one hand, to improve the absorption efficiency of the pump laser, on the other hand, to make the seeds laser in the gain element achieve longer transmission distance by Zigzag transmission path, so that the energy in the gain medium can be fully extracted. And finally, achieve high power laser output.
The present disclosure can adopt the host material doped at least at the same time with Er and Yb elements as the laser gain medium, adopt high-quality 1.55-micron or other medium emission peak band seed laser source as well as end or side pump mode, and can realize the laser output with high power and high beam quality.
Compared with the MOPA laser of the prior art, the present disclosure has the advantages of simple structure, small volume, and low cost.-
公开(公告)号：US20230231358A1
公开(公告)日：2023-07-20
申请号：US18162004
申请日：2023-01-31
IPC分类号： H01S5/02251 , H01S5/50 , G02B6/42 , H01S5/065 , H04B10/70 , H04B10/50 , H01S5/34 , H01S5/14 , H04B10/524 , H04B10/54 , H04B10/564
CPC分类号： H01S5/02251 , H01S5/50 , G02B6/4296 , G02B6/4204 , H01S5/0651 , G02B6/4292 , H04B10/70 , H04B10/503 , H01S5/3412 , H01S5/146 , H04B10/505 , H04B10/506 , H04B10/524 , H04B10/541 , H04B10/564
摘要： Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.
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