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    CONTROLLING FAN MOTORS USING CAPACITIVE SENSING
    1.
    发明申请
    CONTROLLING FAN MOTORS USING CAPACITIVE SENSING 审中-公开
    用电容式感应控制风扇电机

    公开(公告)号：WO2014026006A2

    公开(公告)日：2014-02-13

    申请号：PCT/US2013054144

    申请日：2013-08-08

    Applicant: MARVELL WORLD TRADE LTD ,  SUTARDJA SEHAT

    Inventor： SUTARDJA SEHAT

    IPC: H02K11/00

    CPC classification number: H02K11/0015 ,  G01D5/2412 ,  G01P3/483 ,  G01P13/045 ,  H02K11/21

    Abstract: A motor having a rotor, the rotor including a first metal plate having a first size and a second metal plate having a second size arranged on a first surface associated with the rotor. The first metal plate and the second metal plate are arranged adjacent to each other at a predetermined distance from an axis of rotation of the rotor. The first surface rotates perpendicularly about the axis in response to the rotor being rotated about the axis. A stator includes a third metal plate arranged on a second surface associated with the stator. The third metal plate is arranged on the second surface at the predetermined distance from the axis. The second surface is parallel to the first surface and faces the first surface.

    Abstract translation: 一种具有转子的电动机，转子包括具有第一尺寸的第一金属板和具有第二尺寸的第二金属板，该第二尺寸被布置在与转子相关联的第一表面上。 第一金属板和第二金属板相对于转子的旋转轴线以预定的距离彼此相邻布置。 响应于转子围绕轴线旋转，第一表面围绕轴线垂直旋转。 定子包括布置在与定子相关联的第二表面上的第三金属板。 第三金属板以距轴线预定的距离布置在第二表面上。 第二表面平行于第一表面并面向第一表面。

    METAL OXIDE METAL CAPACITOR STRUCTURES
    2.
    发明申请
    METAL OXIDE METAL CAPACITOR STRUCTURES 审中-公开
    金属氧化物金属电容器结构

    公开(公告)号：WO2012154720A3

    公开(公告)日：2013-04-25

    申请号：PCT/US2012036897

    申请日：2012-05-08

    Applicant: MARVELL WORLD TRADE LTD ,  SUTARDJA SEHAT

    Inventor： SUTARDJA SEHAT

    IPC: H01L29/92 ,  H01G4/005 ,  H01G4/10 ,  H01G4/228

    CPC classification number: H01G4/10 ,  H01G4/005 ,  H01G4/228 ,  H01L23/5223 ,  H01L28/60 ,  H01L28/86 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A metal oxide metal (MOM) capacitor includes an outer conducting structure defined in a plurality of metal layers and a plurality of via layers of an integrated circuit including first opposing side walls, second opposing side walls, a cavity with first and second openings, and openings in the first opposing side walls. An inner conducting structure is defined in the plurality of metal layers and the plurality of via layers of the integrated circuit. The inner conducting structure is arranged in the cavity of the outer conducting structure and includes a body, and conducting extensions that extend from the body through the openings in the first opposing side walls. Oxide is arranged between the outer conducting structure and the inner conducting structure.

    Abstract translation: 金属氧化物金属（MOM）电容器包括限定在多个金属层中的外部导电结构和包括第一相对侧壁，第二相对侧壁，具有第一和第二开口的空腔的集成电路的多个通孔层，以及 在第一相对侧壁中的开口。 内部导电结构限定在集成电路的多个金属层和多个通孔层中。 内部导电结构被布置在外部导电结构的空腔中，并且包括主体以及从主体穿过第一相对侧壁中的开口延伸的导电延伸部。 氧化物布置在外部导电结构和内部导电结构之间。

    LOW-NOISE FINE-FREQUENCY TUNING
    3.
    发明申请
    LOW-NOISE FINE-FREQUENCY TUNING 审中-公开
    低噪声微调调谐

    公开(公告)号：WO2007016626A3

    公开(公告)日：2007-11-15

    申请号：PCT/US2006030091

    申请日：2006-08-01

    Applicant: MARVELL WORLD TRADE LTD ,  GREENBERG JODY ,  SUTARDJA SEHAT

    Inventor： GREENBERG JODY ,  SUTARDJA SEHAT

    IPC: H03L7/00 ,  H03B1/00

    CPC classification number: H03H19/008 ,  H03L1/00 ,  H03L1/026

    Abstract: Figure 3 is an exemplary embodiment of a free running oscillator (310) that is calibrated, the calibration circuit includes the reference oscillator (320), calibration control circuit (330), programmable look-up table (340), transistor (350), capacitor (360), and PWM circuit (370). The invention adjusts a capacitance value by pulse width modulating a control voltage for a switch in series with a capacitor. The PWM signal can be adjusted by using entry values found in a look up table, by using analog or digital control signals, or other approppate methods. The capacitance value tunes a frequency response or characteristic of an electronic circuit The response can be made to be insensitive to conditions such as temperature, power supply voltage or processing.

    Abstract translation: 图3是经校准的自由振荡器（310）的示例性实施例，校准电路包括参考振荡器（320），校准控制电路（330），可编程查找表（340），晶体管（350） 电容器（360）和PWM电路（370）。 本发明通过对与电容器串联的开关的控制电压进行脉宽调制来调整电容值。 可以通过使用查询表中的输入值，使用模拟或数字控制信号或其他适用方法来调整PWM信号。 电容值调节电子电路的频率响应或特性可以使响应对温度，电源电压或处理等条件不敏感。

    INTEGRATED CIRCUIT COMPRISING A MOSFET HAVING BALLAST RESISTORS AND CORRESPONDING MANUFACTURING METHOD
    5.
    发明申请
    INTEGRATED CIRCUIT COMPRISING A MOSFET HAVING BALLAST RESISTORS AND CORRESPONDING MANUFACTURING METHOD 审中-公开
    包括具有压阻电阻器的MOSFET的集成电路及相应的制造方法

    公开(公告)号：WO2013002941A1

    公开(公告)日：2013-01-03

    申请号：PCT/US2012040059

    申请日：2012-05-31

    Applicant: MARVELL WORLD TRADE LTD ,  SUTARDJA SEHAT ,  KRISHNAMOORTHY RAVISHANKER ,  CHUI SIEW YONG

    Inventor： SUTARDJA SEHAT ,  KRISHNAMOORTHY RAVISHANKER ,  CHUI SIEW YONG

    IPC: H01L29/78 ,  H01L21/336 ,  H01L29/08

    CPC classification number: H01L27/0266 ,  H01L27/0288 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7817 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit including a well region (156) having a first doping level and a plurality of semiconductor regions (154) implanted in the well region. Each of the plurality of semiconductor regions has a second doping level greater than the first doping level. A plurality of polysilicon regions (202-1, 202-2, 204-1, 204-2; 302-1, 302-2, 304-1, 304-2) arranged on the plurality of semiconductor regions forms a plurality of ballast resistors. The polysilicon regions are respectively connected to the semiconductor regions, which are degenerated below said polysilicon regions so as to create an additional resistivity. The plurality of semiconductor regions constitutes a drain region of a metal-oxide semiconductor field-effect transistor (MOSFET).

    Abstract translation: 一种集成电路，包括具有第一掺杂水平的阱区（156）和注入阱区中的多个半导体区（154）。 多个半导体区域中的每一个具有大于第一掺杂水平的第二掺杂水平。 布置在所述多个半导体区域上的多个多晶硅区域（202-1,202-2,204-1,204-2; 302-1,302-2,304-1,304-2）形成多个镇流器 电阻器。 多晶硅区域分别连接到半导体区域，半导体区域在所述多晶硅区域下方退化，从而产生附加的电阻率。 多个半导体区域构成金属氧化物半导体场效应晶体管（MOSFET）的漏极区域。

    TIME UPDATING AND LOAD MANAGEMENT SYSTEMS
    8.
    发明申请
    TIME UPDATING AND LOAD MANAGEMENT SYSTEMS 审中-公开
    时间更新和负载管理系统

    公开(公告)号：WO2008085501A4

    公开(公告)日：2009-01-08

    申请号：PCT/US2007026388

    申请日：2007-12-28

    Applicant: MARVELL WORLD TRADE LTD ,  SUTARDJA SEHAT

    Inventor： SUTARDJA SEHAT

    IPC: G08C19/00

    CPC classification number: G08C19/00

    Abstract: A master generator that updates time data of remote devices comprises an acquisition module, a clock module, an encoding module, and a transmission module. The acquisition module acquires time data representing current time of day. The clock module receives and stores the time data from the acquisition module and periodically updates the time data. The encoding module encodes the time data from the clock module into time messages. The transmission module selectively superimposes the time messages onto a power signal.

    Abstract translation: 更新远程设备的时间数据的主发生器包括采集模块，时钟模块，编码模块和传输模块。 采集模块获取代表当前时间的时间数据。 时钟模块接收并存储来自采集模块的时间数据并周期性地更新时间数据。 编码模块将来自时钟模块的时间数据编码成时间消息。 传输模块选择性地将时间消息叠加到功率信号上。

    CRYSTAL OSCILLATOR EMULATOR
    9.
    发明申请
    CRYSTAL OSCILLATOR EMULATOR 审中-公开
    晶体振荡器仿真器

    公开(公告)号：WO2008048644A3

    公开(公告)日：2008-09-25

    申请号：PCT/US2007022168

    申请日：2007-10-17

    Applicant: MARVELL WORLD TRADE LTD ,  SUTARDJA SEHAT

    Inventor： SUTARDJA SEHAT

    IPC: H03B5/30 ,  H03L1/02

    CPC classification number: H03B5/30 ,  H03L1/026 ,  H03L7/07 ,  H03L7/197 ,  H03L7/1976

    Abstract: An integrated circuit comprises a microelectromechanical (MEMS) resonator circuit that generates a reference frequency. A temperature sensor senses a temperature of the integrated circuit. Memory stores calibration parameters and selects at least one of the calibration parameters as a function of the sensed temperature. A phase locked loop module receives the reference signal, comprises a feedback loop having a feedback loop parameter and selectively adjusts the feedback loop parameter based on the at least one of the calibration parameters.

    Abstract translation: 集成电路包括产生参考频率的微机电（MEMS）谐振器电路。 温度传感器感测集成电路的温度。 存储器存储校准参数，并根据检测到的温度选择至少一个校准参数。 锁相环模块接收参考信号，包括具有反馈回路参数的反馈回路，并基于至少一个校准参数选择性地调节反馈回路参数。

    CRYSTAL OSCILLATOR EMULATOR
    10.
    发明申请
    CRYSTAL OSCILLATOR EMULATOR 审中-公开
    水晶振荡器仿真器

    公开(公告)号：WO2008048563A3

    公开(公告)日：2008-06-26

    申请号：PCT/US2007022015

    申请日：2007-10-16

    Applicant: MARVELL WORLD TRADE LTD ,  SUTARDJA SEHAT

    Inventor： SUTARDJA SEHAT

    IPC: H03L1/00 ,  H03L5/00

    CPC classification number: H01L23/34 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/3011 ,  H03L1/026 ,  H03L1/027 ,  H03L5/00 ,  H03L7/07 ,  H03L7/1974 ,  H03L7/1976 ,  H01L2924/00

    Abstract: A crystal oscillator emulator integrated circuit comprises a first temperature sensor that senses a first temperature of the integrated circuit. Memory stores calibration parameters and selects at least one of the calibration parameters based on the first temperature. A semiconductor oscillator generates an output signal having a frequency, which is based on the calibration parameters, and an amplitude. An amplitude adjustment module compares the amplitude to a predetermined amplitude and generates a control signal that adjusts the amplitude based on the comparison.

    Abstract translation: 晶体振荡器模拟器集成电路包括感测集成电路的第一温度的第一温度传感器。 存储器存储校准参数并且基于第一温度选择至少一个校准参数。 半导体振荡器产生具有基于校准参数的频率的输出信号和振幅。 幅度调整模块将振幅与预定幅度进行比较，并产生基于该比较来调节振幅的控制信号。

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