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    HYDRODYNAMIC DISC DRIVE SPINDLE MOTOR HAVING HYDRO BEARING WITH LUBRICANT
    31.
    发明申请
    HYDRODYNAMIC DISC DRIVE SPINDLE MOTOR HAVING HYDRO BEARING WITH LUBRICANT 审中-公开
    具有润滑剂的水力轴承的水力驱动主轴电机

    公开(公告)号：WO2012030410A1

    公开(公告)日：2012-03-08

    申请号：PCT/US2011/030312

    申请日：2011-03-29

    Applicant: SEAGATE TECHNOLOGY LLC ,  KHAN, Raquib Uddin

    Inventor： KHAN, Raquib Uddin

    IPC: G11B19/20

    CPC classification number: H02K7/088 ,  C10M169/04 ,  G11B19/2036

    Abstract: Disc drive spindle motor having hydro bearing including a central axis; a stationary member which is fixed with respect to a housing and coaxial with the central axis; a stator is fixed with respect to the housing; a rotatable member which is rotatable about the central axis with respect to the stationary member; a rotor supported by the rotatable member and magnetically coupled to the stator; a hydro bearing interconnecting the stationary member and the rotatable member and having working surfaces separated by a lubricating fluid. The lubricating fluid contains a synthetic ester base fluid having a viscosity index of at least 110, from 0.01% to 5% by weight, based on the total weight of the lubricating fluid, of at least one tri-C6-C14-aryl phosphate, and from 0.01% by weight to 5% by weight, based on the total weight of the synthetic ester base fluid, of at least one carbodiimide.

    Abstract translation: 具有包括中心轴线的液压轴承的盘驱动主轴马达; 固定构件，其相对于壳体固定并与中心轴线同轴; 定子相对于壳体固定; 可旋转构件，其可围绕所述中心轴线相对于所述固定构件旋转; 由所述可旋转构件支撑并且磁耦合到所述定子的转子; 水平轴承将固定构件和可旋转构件互连，并具有由润滑流体分开的工作表面。 润滑流体含有合成酯基液体，其粘度指数为至少110，基于润滑流体的总重量的0.01重量％至5重量％的至少一种三-C 6 - C 14 - 芳基磷酸酯， 和基于合成酯基流体的总重量的0.01重量％至5重量％的至少一种碳二亚胺。

    JOINT ENCODING OF LOGICAL PAGES IN MULTI-PAGE MEMORY ARCHITECTURE
    33.
    发明申请
    JOINT ENCODING OF LOGICAL PAGES IN MULTI-PAGE MEMORY ARCHITECTURE 审中-公开
    多页存储器架构中逻辑页面的编辑

    公开(公告)号：WO2011146364A2

    公开(公告)日：2011-11-24

    申请号：PCT/US2011/036599

    申请日：2011-05-16

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： PATAPOUTIAN, Ara ,  SRIDHARA, Deepak ,  BUCH, Bruce, Douglas

    IPC: G11C11/56 ,  G06F11/10

    CPC classification number: G11C11/5628 ,  G11C29/00 ,  G11C2216/14

    Abstract: Multiple logical pages are jointly encoded into a single code word and are stored in the same physical page of a solid state non-volatile memory (NVM) device having multi¬ level memory cells. A first logical page of the multiple logical pages is stored in the memory device as first bits of the multi-level memory cells while a second logical page of the multiple logical pages is temporarily cached. After the first logical page is stored as the first bits of the memory cell, the second logical page is stored as second bits of the memory cells.

    Abstract translation: 多个逻辑页面被联合编码为单个码字，并被存储在具有多层存储器单元的固态非易失性存储器（NVM）设备的相同物理页面中。 多个逻辑页面的第一逻辑页面被存储在存储器设备中作为多级存储器单元的第一位，而多个逻辑页面的第二逻辑页面被临时高速缓存。 在将第一逻辑页面存储为存储器单元的第一位之后，第二逻辑页面被存储为存储器单元的第二位。

    STATIC MAGNETIC FIELD ASSISTED RESISTIVE SENSE ELEMENT
    34.
    发明申请
    STATIC MAGNETIC FIELD ASSISTED RESISTIVE SENSE ELEMENT 审中-公开
    静磁场辅助电感元件

    公开(公告)号：WO2011008616A1

    公开(公告)日：2011-01-20

    申请号：PCT/US2010/041303

    申请日：2010-07-08

    Applicant: SEAGATE TECHNOLOGY LLC ,  YUANKAI, Zheng ,  XIAOHUA, Lou ,  HAIWEN, Xi ,  Tang, Michael

    Inventor： YUANKAI, Zheng ,  XIAOHUA, Lou ,  HAIWEN, Xi ,  Tang, Michael

    IPC: G11C11/16 ,  H01L43/08

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: Apparatus and associated method for writing data to a non-volatile memory cell (140, 154), such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) (140) has a heat assist region (150), magnetic tunneling junction (MTJ) (142), and pinned region (152). When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

    Abstract translation: 用于将数据写入非易失性存储单元（140,154）的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。 根据一些实施例，电阻感测元件（RSE）（140）具有热辅助区域（150），磁性隧道结（MTJ）（142）和固定区域（152）。 当第一逻辑状态以自旋极化电流写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。 当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

    MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS
    35.
    发明申请
    MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS 审中-公开
    具有正交磁化定向方向的参考层的磁性堆栈

    公开(公告)号：WO2011008615A1

    公开(公告)日：2011-01-20

    申请号：PCT/US2010/041300

    申请日：2010-07-08

    Applicant: SEAGATE TECHNOLOGY LLC ,  YUANKAI, Zheng ,  ZHENG, Gao ,  WENZHONG, Zhu ,  WONJOON, Jung ,  HAIWEN, Xi

    Inventor： YUANKAI, Zheng ,  ZHENG, Gao ,  WENZHONG, Zhu ,  WONJOON, Jung ,  HAIWEN, Xi

    IPC: G11C11/16 ,  H01L43/08

    CPC classification number: H01F10/329 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L43/08

    Abstract: A magnetic cell (10) includes a ferromagnetic free layer (18) having a free magnetization orientation direction (M F ) and a first ferromagnetic pinned reference layer (14) having a first reference magnetization orientation direction (M R1 )that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer (16) is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer (13) having a second reference magnetization orientation direction (M R2 ) that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.

    Abstract translation: 磁性电池（10）包括具有自由磁化取向方向（MF）的铁磁自由层（18）和具有平行或反平行的第一参考磁化取向方向（MR1）的第一铁磁性固定参考层（14） 到自由磁化取向方向。 第一氧化物阻挡层（16）在铁磁性自由层和第一铁磁性固定参考层之间。 磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向（MR2）的第二铁磁性固定参考层（13）。 铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

    THREE DIMENSIONALLY STACKED NON-VOLATILE MEMORY UNITS
    36.
    发明申请
    THREE DIMENSIONALLY STACKED NON-VOLATILE MEMORY UNITS 审中-公开
    三维尺寸非易失性存储单元

    公开(公告)号：WO2010120634A1

    公开(公告)日：2010-10-21

    申请号：PCT/US2010/030466

    申请日：2010-04-09

    Applicant: SEAGATE TECHNOLOGY LLC ,  WANG, Xuguang ,  LU, Yong ,  LI, Hai ,  LIU, Hongyue

    Inventor： WANG, Xuguang ,  LU, Yong ,  LI, Hai ,  LIU, Hongyue

    IPC: H01L27/24 ,  H01L27/22

    CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/142 ,  H01L45/146 ,  H01L45/147 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A memory unit (200) including a first transistor (210) spanning a first transistor region in a first layer of the memory unit; a second transistor (220) spanning a second transistor region in a second layer of the memory unit; a first resistive sense memory (RSM) cell (230) spanning a first memory region in a third layer of the memory unit; and a second RSM cell (250) spanning a second memory region in the third layer of the memory unit, wherein the first transistor is electrically coupled to the first RSM cell, and the second transistor is electrically coupled to the second RSM cell, wherein the second layer is between the first and third layers, wherein the first and second transistor have an transistor overlap region, and wherein the first memory region and the second memory region do not extend beyond the first transistor region and the second transistor region.

    Abstract translation: 存储单元（200），包括跨越存储器单元的第一层中的第一晶体管区域的第一晶体管（210） 跨越存储器单元的第二层中的第二晶体管区域的第二晶体管（220）; 跨越存储器单元的第三层中的第一存储器区域的第一电阻读出存储器（RSM）单元（230） 以及跨越存储器单元的第三层中的第二存储器区域的第二RSM单元（250），其中第一晶体管电耦合到第一RSM单元，并且第二晶体管电耦合到第二RSM单元，其中， 第二层位于第一和第三层之间，其中第一和第二晶体管具有晶体管重叠区域，并且其中第一存储区域和第二存储区域不延伸超过第一晶体管区域和第二晶体管区域。

    RESISTIVE SENSE MEMORY WITH COMPLEMENTARY PROGRAMMABLE RECORDING LAYERS
    37.
    发明申请
    RESISTIVE SENSE MEMORY WITH COMPLEMENTARY PROGRAMMABLE RECORDING LAYERS 审中-公开
    具有可编程记录层的电感式存储器

    公开(公告)号：WO2010114893A1

    公开(公告)日：2010-10-07

    申请号：PCT/US2010/029385

    申请日：2010-03-31

    Applicant: SEAGATE TECHNOLOGY LLC ,  ZHENG, Yuankai ,  LOU, Xiaohua ,  GAO, Zheng ,  TIAN, Wei ,  DIMITROV, Dimitar, V. ,  WANG, Dexin

    Inventor： ZHENG, Yuankai ,  LOU, Xiaohua ,  GAO, Zheng ,  TIAN, Wei ,  DIMITROV, Dimitar, V. ,  WANG, Dexin

    IPC: G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1673

    Abstract: A resistive sense memory ( 130, 150) and method (200) of writing data thereto. In accordance with various embodiments, the resistive sense memory comprises a first reference layer (132) with a fixed magnetic orientation in a selected direction coupled to a first tunneling barrier ( 136), a second reference layer (134) with a fixed magnetic orientation in the selected direction coupled to a second tunneling barrier (138), and a recording structure (140) disposed between the first and second tunneling barriers comprising first and second free layers (142, 144). A selected logic state is written to the resistive sense memory (206, 208) by applying a programming input (148) to impart complementary first and second programmed magnetic orientations to the respective first and second free layers.

    Abstract translation: 一种向其写入数据的电阻式读出存储器（130,150）和方法（200）。 根据各种实施例，电阻性感测存储器包括在耦合到第一隧道势垒（136）的选定方向上具有固定磁性取向的第一参考层（132），具有固定磁性取向的第二参考层（134） 所述选择的方向耦合到第二隧道势垒（138），以及设置在所述第一和第二隧穿屏障之间的记录结构（140），包括第一和第二自由层（142,144）。 通过施加编程输入（148）将所选择的逻辑状态写入电阻读出存储器（206,208），以将互补的第一和第二编程的磁取向赋予相应的第一和第二自由层。

    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
    40.
    发明申请
    SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD 审中-公开
    旋转转矩记忆自参考读取方法

    公开(公告)号：WO2010096768A1

    公开(公告)日：2010-08-26

    申请号：PCT/US2010/024928

    申请日：2010-02-22

    Applicant: SEAGATE TECHNOLOGY LLC ,  ZHENG, Yuanki ,  CHEN, Yiran ,  WANG, Xiaobin ,  GAO, Zheng ,  DIMITROV, Dimitar ,  ZHU, Wenzhong ,  LU, Yong

    Inventor： ZHENG, Yuanki ,  CHEN, Yiran ,  WANG, Xiaobin ,  GAO, Zheng ,  DIMITROV, Dimitar ,  ZHU, Wenzhong ,  LU, Yong

    IPC: G11C11/16

    CPC classification number: G11C11/1673

    Abstract: Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

    Abstract translation: 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

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