公开(公告)号：WO2004088721A3

公开(公告)日：2005-04-21

申请号：PCT/US2004009453

申请日：2004-03-25

Applicant: TIMBRE TECH INC ,  BALASUBRAMANIAN RAGHU ,  YEDUR SANJAY ,  VUONG VI ,  JAKATDAR NICKHIL

Inventor： BALASUBRAMANIAN RAGHU ,  YEDUR SANJAY ,  VUONG VI ,  JAKATDAR NICKHIL

IPC: G01B11/06 ,  G01B11/00 ,  G01B11/02 ,  G01B11/04 ,  G01B11/08 ,  G01B11/14 ,  G01B11/22 ,  G01B11/28 ,  G01N21/00 ,  G01N21/41 ,  G01N21/47 ,  G06F20060101 ,  G06F15/00 ,  G06F19/00 ,  G06T7/00 ,  H01L21/66 ,  G01N21/86 ,  G06F17/10 ,  H01L21/00

CPC classification number: G06T7/0006 ,  G01N21/4788 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/70625 ,  G06T2207/30148

Abstract: A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.

Abstract translation: 基于具有一个或多个参数的模板来选择用于晶片中结构的光学测量的轮廓模型，该模板包括与晶片中的结构相关联的过程和建模属性的特征。 该过程包括执行轮廓建模过程以基于具有包括过程和建模属性的特征的一个或多个参数的模板来生成晶片结构的轮廓模型。 轮廓模型包括与结构的尺寸相关联的一组几何参数。 可以进一步根据终止标准测试生成的简档模型，并修改一个或多个参数。 可以重复执行建模过程以生成简档模型并测试生成的简档模型的过程，直到满足终止标准。

公开(公告)号：WO2004088721A2

公开(公告)日：2004-10-14

申请号：PCT/US2004/009453

申请日：2004-03-25

Applicant: TIMBRE TECHNOLOGIES, INC. ,  BALASUBRAMANIAN, Raghu ,  YEDUR, Sanjay ,  VUONG, VI ,  JAKATDAR, Nickhil

Inventor： BALASUBRAMANIAN, Raghu ,  YEDUR, Sanjay ,  VUONG, VI ,  JAKATDAR, Nickhil

IPC: H01L

CPC classification number: G06T7/0006 ,  G01N21/4788 ,  G03F7/705 ,  G03F7/70616 ,  G03F7/70625 ,  G06T2207/30148

Abstract: A profile model for use in optical metrology of structures in a wafer is selected based on a template having one or more parameters including characteristics of process and modeling attributes associated with a structure in a wafer. The process includes performing a profile modeling process to generate a profile model of a wafer structure based on a template having one or more parameters including characteristics of process and modeling attributes. The profile model includes a set of geometric parameters associated with the dimensions of the structure. The generated profile model may further be tested against termination criteria and the one or more parameters modified. The process of performing a modeling process to generate a profile model and testing the generated profile model may be repeated until the termination criteria are met.

Abstract translation: 基于具有一个或多个参数的模板来选择用于晶片中结构的光学测量的轮廓模型，该模板包括与晶片中的结构相关联的过程和建模属性的特性。 该过程包括执行轮廓建模过程以基于具有包括过程和建模属性的特征的一个或多个参数的模板来生成晶片结构的轮廓模型。 轮廓模型包括与结构的尺寸相关联的一组几何参数。 可以进一步根据终止标准测试生成的简档模型，并修改一个或多个参数。 可以重复执行建模过程以生成简档模型并测试生成的简档模型的过程，直到满足终止标准。

公开(公告)号：WO03038858A8

公开(公告)日：2004-02-19

申请号：PCT/JP0211450

申请日：2002-11-01

Applicant: EBARA CORP ,  SATAKE TOHRU ,  NOJI NOBUHARU

Inventor： SATAKE TOHRU ,  NOJI NOBUHARU

IPC: H01L21/66 ,  B24B37/04 ,  G03F7/20 ,  H01J37/18 ,  H01J37/28 ,  H01J37/29 ,  H01L21/00

CPC classification number: H01L21/67219 ,  B24B37/005 ,  G03F7/70616 ,  G03F7/70991 ,  H01J37/28 ,  H01J2237/2817 ,  H01L21/67288 ,  Y10T29/41

Abstract: According to the present invention, a chemical and mechanical polishing apparatus (100) for a sample such as a wafer includes a built-in inspection apparatus (25) incorporated therein. The polishing apparatus (100) further comprises a load unit (21), a chemical and mechanical polishing unit (22), a cleaning unit (23), a drying unit (24) and an unload unit (26). The chemical and mechanical polishing apparatus (100) receives a sample from a preceding step (107), carries out respective processes for the sample by said respective units disposed within the polishing apparatus (100) and then transfers the processed sample to a subsequent step (109). Sample loading and unloading means and a sample transfer means are no more necessary for transferring the sample between respective units.

Abstract translation: 根据本发明，用于诸如晶片的样品的化学和机械抛光装置（100）包括结合在其中的内置检查装置（25）。 抛光装置（100）还包括加载单元（21），化学和机械抛光单元（22），清洁单元（23），干燥单元（24）和卸载单元（26）。 化学和机械抛光装置（100）从前面的步骤（107）接收样品，通过设置在抛光装置（100）内的各个单元对样品进行各自的处理，然后将处理的样品转移到随后的步骤 109）。 样品装载和取样装置和样品转移装置不再需要在各个单元之间转移样品。

公开(公告)号：WO03054475A2

公开(公告)日：2003-07-03

申请号：PCT/US0241151

申请日：2002-12-19

Applicant: KLA TENCOR CORP

Inventor： SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD ,  LEVY ADY ,  WACK DANIEL C ,  BAREKET NOAH ,  MIEHER WALTER ,  DZIURA TED

IPC: G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  H01L21/66

CPC classification number: G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

Abstract translation: 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：WO2002101602A1

公开(公告)日：2002-12-19

申请号：PCT/US2002/018955

申请日：2002-06-13

Applicant: KLA-TENCOR CORPORATION

Inventor： MCGHEE, Ridge, C. ,  ANANTHANARAYANAN, Mohan ,  WATTS, Robert, A.

IPC: G06F17/50

CPC classification number: G03F1/84 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70616

Abstract: Disclosed are methods and apparatus for generating a test recipe for a metrology tool (306) is disclosed. A plurality of first reference images (308) that are designed to be used to fabricated a plurality of structures on a sample are provided. Each structure is imageable to form a plurality of target image patterns. A test recipe for use by a metrology tool (306) in locating the structures on the samples is generated or modified. Generating or modifying the test recipe includes forming a plurality of second reference images (310) from the first reference images (308) and associating the second reference images (310) with the test recipe. The second reference images (310) are formed to at least partially simulate one or more process effect(s) associated with fabricating the structures of the sample. Additionally, the second reference images (310) may also be formed to simulate one or more imaging effects.

Abstract translation: 公开了用于生成计量工具（306）的测试配方的方法和装置。 提供被设计为用于制造样品上的多个结构的多个第一参考图像（308）。 每个结构可成像以形成多个目标图像图案。 生成或修改由计量工具（306）用于定位样品上的结构的测试配方。 生成或修改测试配方包括从第一参考图像（308）形成多个第二参考图像（310）并且将第二参考图像（310）与测试配方相关联。 第二参考图像（310）被形成为至少部分地模拟与制造样品的结构相关联的一个或多个处理效果。 另外，也可以形成第二参考图像（310）以模拟一个或多个成像效果。

公开(公告)号：WO02049080A2

公开(公告)日：2002-06-20

申请号：PCT/US2001/048646

申请日：2001-12-14

IPC: G01N21/956 ,  G01N23/20 ,  G01N23/225 ,  G03F1/00 ,  G03F7/20 ,  H01J37/22 ,  H01J37/28 ,  H01L21/66 ,  H01L

CPC classification number: G01N23/203 ,  G01N21/956 ,  G01N21/95607 ,  G01N23/20 ,  G01N23/2251 ,  G01N23/2252 ,  G01N2223/304 ,  G01N2223/611 ,  G01N2223/646 ,  G03F1/84 ,  G03F1/86 ,  G03F7/70616 ,  G03F7/7065 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2817

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Abstract translation: 本发明涉及一种用于检查和搜索缺陷的方法和装置，其改进了数据收集程序。 在一个实施例中，在粒子束系统中使用多个或分段的检测器。

公开(公告)号：WO0206899A2

公开(公告)日：2002-01-24

申请号：PCT/US0122518

申请日：2001-07-19

Applicant: SILICON VALLEY GROUP

Inventor： HANSEN MATTHEW E

IPC: G03F1/08 ,  G02B27/18 ,  G03F7/20 ,  H01L21/027 ,  G03F

CPC classification number: G03F7/706 ,  G03F7/70616

Abstract: Characterization of an optical system is quickly and easily obtained in a single acquisition step by obtaining image data within a volume of image space. A reticle and image plane are positioned obliquely with respect to each other such that a reticle having a plurality of feature sets thereon, including periodic patterns or gratings, is imaged in a volume of space, including the depth of focus. Metrology tools are used to analyze the detected or recorded image in the volume of space through the depth of focus in a single step or exposure to determine the imaging characteristics of an optical system. Focus, field curvature, astigmatism, spherical, coma, and/or focal plane deviations can be determined. The present invention is particularly applicable to semiconductor manufacturing and phototithographic techniques used therein, and is able to quickly characterize an optical system in a single exposure with dramatically increased data quality and continuous coverage of the full parameter space. In embodiments, the test reticle is holographically generated by interfering two or more beams of optical radiation. The resulting interference pattern is recorded on a reticle and used for testing the optical system. The geometry of the holographic interference pattern is tightly controlled by the properties of the interfering beams and is therefore more accurate than conventional reticle writing techniques.

Abstract translation: 通过在图像空间的体积内获得图像数据，在单个采集步骤中快速且容易地获得光学系统的表征。 掩模版和图像平面相对于彼此倾斜地定位，使得其上包括周期性图案或光栅的具有多个特征集的掩模版被成像在包括焦深的空间体积中。 计量工具用于通过单步骤或曝光中的焦点深度来分析检测或记录的空间体积，以确定光学系统的成像特性。 可以确定焦点，场曲率，散光，球面，彗差和/或焦平面偏差。 本发明特别适用于其中使用的半导体制造和光刻技术，并且能够以单一曝光快速表征光学系统，并以显着提高的数据质量和全参数空间的连续覆盖。 在实施例中，通过干扰两个或更多个光辐射束来全息地产生测试掩模版。 所得到的干涉图案被记录在掩模版上并用于测试光学系统。 全息干涉图案的几何形状受到干涉光束的特性的严格控制，因此比传统的掩模版书写技术更精确。

公开(公告)号：WO01088589A1

公开(公告)日：2001-11-22

申请号：PCT/US2001/015642

申请日：2001-05-15

IPC: G01N21/33 ,  G02B13/14 ,  G02B17/02 ,  G02B17/08 ,  G02B21/16 ,  G03C5/16 ,  G03F1/84 ,  G03F3/00 ,  G03F7/20 ,  H04N5/225 ,  G02B13/04 ,  G02B15/04 ,  G02B23/06

CPC classification number: G02B17/0896 ,  G02B17/023 ,  G02B17/0808 ,  G02B17/0812 ,  G02B17/0856 ,  G02B17/086 ,  G02B17/0892 ,  G02B21/16 ,  G03F1/84 ,  G03F7/70225 ,  G03F7/70275 ,  G03F7/70616 ,  G03F7/7065

Abstract: An ultra-broadband ultraviolet (UV) catadioptric imaging microscope system with wide-range zoom capability is disclosed. The microscope system, which comprises a catadioptric lens group (122) and a zooming tube lens group (139), has high optical resolution in the deep UV wavelengths, continuously adjustable magnification, and a high numerical aperture. The system integrates microscope modules such as objectives (128), tube lenses and zoom optics to reduce the number of components, and to simplify the system manufacturing process. The preferred embodiment offers excellent image quality across a very broad deep ultraviolet spectral range, combined with an all-refractive zooming tube lens. The zooming tube lens is modified to compensate for higher-order chromatic aberrations that would normally limit performance.

Abstract translation: 公开了一种具有宽范围变焦能力的超宽带紫外（UV）反折射成像显微镜系统。 包括反射折射透镜组（122）和变焦管透镜组（139）的显微镜系统在深UV波长，连续可调放大倍数和高数值孔径中具有高的光学分辨率。 该系统集成了诸如目标（128），管透镜和变焦光学的显微镜模块，以减少部件数量，并简化系统制造过程。 优选实施例在非常广泛的深紫外光谱范围内提供优异的图像质量，与全折射变焦管透镜组合。 变焦管镜头被修改以补偿通常会限制性能的高阶色差。

公开(公告)号：WO01004682A1

公开(公告)日：2001-01-18

申请号：PCT/US2000/017121

申请日：2000-06-22

IPC: G01B11/30 ,  G01N21/956 ,  G02B17/08 ,  G02B21/00 ,  G02B21/04 ,  G02B21/16 ,  G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/70225 ,  G02B17/08 ,  G02B17/0812 ,  G02B17/0856 ,  G02B17/0892 ,  G02B17/0896 ,  G02B21/04 ,  G02B21/16 ,  G03F1/84 ,  G03F7/70275 ,  G03F7/70483 ,  G03F7/70616 ,  G03F7/7065

Abstract: A design for inspecting specimens, such as photomasks, for unwanted particles and features such as pattern defects is provided. The system provides no central obscuration, an external pupil for aperturing and Fourier filtering, and relatively relaxed manufacturing tolerances, and is suited for both broad-band bright-field and laser dark field imaging and inspection at wavelengths below 365 nm. In many instances, the lenses used may be fashioned or fabricated using a single material. Multiple embodiments of the objective lensing arrangement are disclosed, all including at least one small fold mirror and a Mangin mirror. The system is implemented off axis such that the returning second image is displaced laterally from the first image so that the lateral separation permits optical receipt and manipulation of each image separately. The objective designs presented have the optical axis of the Mangin mirror image relay at ninety degrees to the optical axis defined by the focusing lenses, or an in-line or straight objective having one ninety degree bend of light rays.

Abstract translation: 提供了用于检查样品的设计，例如光掩模，用于不想要的颗粒和诸如图案缺陷的特征。 该系统不提供中心遮蔽，用于打开和傅立叶滤波的外部光瞳，以及相对放松的制造公差，并且适用于波长低于365nm的宽带亮场和激光暗场成像和检查。 在许多情况下，所使用的透镜可以使用单一材料来制造或制造。 公开了物镜设计的多个实施例，全部包括至少一个小折叠镜和Mangin镜。 系统离轴实现，使得返回的第二图像从第一图像横向移位，使得横向分离允许分别对每个图像进行光学接收和操纵。 所提出的目标设计具有与由聚焦透镜限定的光轴90度的Mangin镜像继电器的光轴，或具有一个九十度光线弯曲的直列或直线物镜。

公开(公告)号：WO0072090A2

公开(公告)日：2000-11-30

申请号：PCT/SE0001030

申请日：2000-05-22

Applicant: MICRONIC LASER SYSTEMS AB ,  SANDSTROEM TORBJOERN ,  EKBERG PETER ,  ASKEBJER PER ,  EKBERG MATS ,  THUREN ANDERS

Inventor： SANDSTROEM TORBJOERN ,  EKBERG PETER ,  ASKEBJER PER ,  EKBERG MATS ,  THUREN ANDERS

IPC: G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03F

CPC classification number: G03F7/704 ,  G03F1/72 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/706 ,  G03F7/70616 ,  G03F7/70783

Abstract: The present invention relates to a method and a system for predicting and correcting geometrical errors in lithography using masks, such as large-area photomasks or reticles, and exposure stations, such as wafer steppers or projection aligners, printing the pattern of said masks on a workpiece, such as a display panel or a semi-conductor wafer. The method according to the invention comprises the steps of collecting information about a mask substrate, a mask writer, an exposure station, and/or about behaviour of a processing step that will occur after the writing of the mask. Further the method comprises predicting from the combined information distorsions occuring in the pattern, when it is subsequently printed on the workpiece; calculating from said prediction a correction to diminish said predicted distorsion, and exposing said pattern onto said mask substrate while applying said correction for said distorsions.

Abstract translation: 本发明涉及一种用于使用诸如大面积光掩模或掩模版的掩模的光刻中的几何误差的预测和校正方法和系统，以及诸如晶片步进器或投影对准器的曝光站，将所述掩模的图案印刷在 工件，例如显示面板或半导体晶片。 根据本发明的方法包括以下步骤：收集关于掩模基板，掩模写入器，曝光站的信息，和/或关于在写入掩模之后将发生的处理步骤的行为。 此外，该方法包括当随后将其印刷在工件上时，从图案中发生的组合信息变化来预测; 从所述预测计算减少所述预测变形的校正，以及将所述图案暴露于所述掩模基板上，同时对所述扭曲施加所述校正。