LITHOGRAPHY LASER WITH BEAM DELIVERY AND BEAM POINTING CONTROL
    71.
    发明申请
    LITHOGRAPHY LASER WITH BEAM DELIVERY AND BEAM POINTING CONTROL 审中-公开
    光束激光与光束输送和光束点控制

    公开(公告)号:WO2003100826A2

    公开(公告)日:2003-12-04

    申请号:PCT/US2003/014387

    申请日:2003-05-05

    IPC: H01L

    Abstract: The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source with a beam delivery to a production line machine. The system includes an enclosed and purged beam path with beam pointing control for delivery the laser beam to a desired location such as the entrance port of the production line machine. Preferred embodiments include equipment for beam attenuation, equipment for automatic feedback beam alignment and equipment for accurate optics module positioning at installation and during maintenance. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.

    Abstract translation: 本发明提供了一种向生产线机器输送光束的模块化高重复率紫外线气体放电激光光源。 该系统包括具有光束指向控制的封闭和清除的光束路径,用于将激光束传送到期望的位置,例如生产线机器的入口。 优选实施例包括用于光束衰减的设备,用于自动反馈光束对准的设备和用于在安装和维护期间精确的光学模块定位的设备。 在优选实施例中,生产线机器是光刻机,并且提供两个单独的放电室,其中之一是主振荡器的一部分,其产生在第二放电室中放大的非常窄的带状晶体束。 该MOPA系统能够以大大提高的光束质量将输出脉冲能量大约增加到相当的单室激光器系统的两倍。 与现有技术的激光系统相比,脉冲放大器使输出脉冲长度加倍,导致脉冲功率(mJ / ns)的降低。 该优选实施例能够在光刻系统晶片平面处提供照明,其在光刻系统的整个使用寿命期间大致恒定,尽管光学部件的实质性劣化。

    TIMING CONTROL FOR TWO-CHAMBER GAS DISCHARGE LASER SYSTEM
    72.
    发明申请
    TIMING CONTROL FOR TWO-CHAMBER GAS DISCHARGE LASER SYSTEM 审中-公开
    两台气体放电激光系统的时序控制

    公开(公告)号:WO2003049241A1

    公开(公告)日:2003-06-12

    申请号:PCT/US2002/034045

    申请日:2002-10-23

    Abstract: Feedback timing control equipment and process for an injection seeded modular gas discharge laser (11). A preferred embodiment is a system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 to 10 mJ or greater for integrated outputs of about 20 to 40 Watts or greater. The feedback timing control is programmed to permit in some circumstances discharges timed so that no significant laser energy is output from the system. Use of this technique permits burst mode operation in which the first discharge of a burst is a no-output discharge so that timing parameters for each of the two chambers can be monitored before the first laser output pulse of the burst. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber.

    Abstract translation: 反馈定时控制设备和注射种子模块化气体放电激光器的工艺(11)。 优选的实施方案是能够以大约4,000Hz或更大的脉冲速率产生高质量脉冲激光束并且在约20至40瓦或更大的集成输出的脉冲能量为约5至10mJ或更大的系统。 反馈定时控制被编程为允许在某些情况下放电定时,使得不会从系统输出显着的激光能量。 使用这种技术允许突发模式操作,其中突发的第一次放电是无输出放电,使得可以在突发的第一激光输出脉冲之前监视两个室中的每一个的定时参数。 提供两个单独的放电室,其中之一是主振荡器的一部分,其产生在第二放电室中放大的非常窄的带状晶体束。 可以单独控制室,允许在主振荡器中优化波长参数并优化放大室中的脉冲能量参数。

    LITHOGRAPHY SYSTEM AND METHOD FOR DEVICE MANUFACTURE
    73.
    发明申请
    LITHOGRAPHY SYSTEM AND METHOD FOR DEVICE MANUFACTURE 审中-公开
    用于设备制造的LITHOGRAPHY系统和方法

    公开(公告)号:WO2002093254A1

    公开(公告)日:2002-11-21

    申请号:PCT/US2002/009593

    申请日:2002-03-27

    Abstract: A lithography system and method for cost-effective device manufacture that can employ a new "flash-on-the-fly" mode of operation is disclosed, wherein exposure fields are formed with single pulses of radiation. The system includes a pulsed radiation source (14), an illumination system (24), a mask (M), a projection lens (40) an a workpiece stage (50) that supports a workpiece (W) having an image-bearing surface (WS). A radiation source controller (16) and a workpiece stage position system (60), which includes a metrology device (62), are used to coordinate and control the exposure of the mask with radiation pulses so that adjacent radiation pulses form adjacent exposure fields (EF). Where pulse-to-pulse uniformity from the radiation source is lacking, a pulse stabilization system (18) may be optionally used to attain the desired pulse-to-pulse uniformity in exposure dose. The rapidity at which exposures can be made using a single radiation pulse allows for a very high throughput, which in turn allows for a small-image- field projection lens to be utilized in a cost-effective manner in the manufacture of devices such as semiconductor integrated circuits and the like. The system can also be used in the conventional "step-and-repeat" mode of operation, so that the system owner can decide the most cost-effective mode of operation for any given application.

    Abstract translation: 公开了一种用于具有成本效益的器件制造的光刻系统和方法,其可以采用新的“快闪”操作模式,其中曝光场由单个辐射脉冲形成。 该系统包括一个脉冲辐射源(14),一个照明系统(24),一个掩模(M),一个投影透镜(40),一个支撑工件(W)的工件台(50) (WS)。 使用辐射源控制器(16)和包括测量装置(62)的工件台位置系统(60)来协调和控制具有辐射脉冲的掩模的曝光,使得相邻辐射脉冲形成相邻的曝光场( EF)。 在缺少来自辐射源的脉冲 - 脉冲均匀性的情况下,可以可选地使用脉冲稳定系统(18)来获得曝光剂量期望的脉冲 - 脉冲均匀性。 可以使用单个辐射脉冲进行曝光的速度允许非常高的通量,这进而允许在制造诸如半导体的器件中以成本有效的方式利用小图像场投影透镜 集成电路等。 该系统也可以用于常规的“重复步骤”操作模式,以便系统所有者可以为任何给定的应用程序决定最具成本效益的操作模式。

    INJECTION SEEDED F2 LITHOGRAPHY LASER
    76.
    发明申请
    INJECTION SEEDED F2 LITHOGRAPHY LASER 审中-公开
    注射种子F2光刻激光

    公开(公告)号:WO01061798A1

    公开(公告)日:2001-08-23

    申请号:PCT/US2000/032413

    申请日:2000-11-28

    Abstract: The claimed invention is a tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life releasable lithography lasers with special F2 line narrowing and tuning techniques. This techniques are applied to a seed beam which is operated in a first gain medium. This seed beam is then used to stimulate narrow band lasing in a second gain medium. The resulting very narrow band laser beam is useful for integrated circuit lithography. One preferred embodiment of the invention comprises a laser chamber (211), a gas module (202), a control module (205), a line narrowing module (206), and a pulse power supply module (208).

    Abstract translation: 所要求保护的发明是可调式注入种子非常窄带F2光刻激光器。 该激光器结合了现有技术的长寿命可剥离光刻激光器的模块化设计特征,具有特殊的F2线窄化和调谐技术。 该技术应用于在第一增益介质中操作的种子束。 然后该种子束用于在第二增益介质中刺激窄带激光。 所得到的非常窄带激光束对于集成电路光刻是有用的。 本发明的一个优选实施例包括激光室(211),气体模块(202),控制模块(205),线路窄化模块(206)和脉冲电源模块(208)。

    ArF LASER WITH LOW PULSE ENERGY AND HIGH REP RATE
    78.
    发明申请
    ArF LASER WITH LOW PULSE ENERGY AND HIGH REP RATE 审中-公开
    具有低脉冲能量和高反射率的ArF激光

    公开(公告)号:WO0038286A8

    公开(公告)日:2001-07-12

    申请号:PCT/US9929682

    申请日:1999-12-13

    Abstract: A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse repetition energies in the range of about 2mJ to 5mJ or greater with a full width half maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 mu m (100nm) or less, replaceable modules include a laser chamber (80); a modular pulse power system; and a line narrowing module (86) for a given laser power output. The higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.

    Abstract translation: 一种可靠的模块化生产质量的ArF准分子激光器,其能够以3,000至4,000Hz或更大的重复频率产生激光脉冲,脉冲重复能量在约2mJ至5mJ或更大的范围内,全宽度半最大带宽约为0.4 pm以下,剂量稳定性小于0.4%。 使用该激光器作为照明源,步进器或扫描仪设备可以产生0.10μm(100nm)或更小的集成电路分辨率,可更换模块包括激光室(80); 模块式脉冲电源系统; 以及用于给定激光功率输出的线窄模块(86)。 较高的重复率提供了两个重要的优点。 较低的每脉冲能量意味着更少的光学损伤,并且指定照射剂量的较大数量的脉冲表示更好的剂量稳定性。

    WAVEMETER FOR GAS DISCHARGE LASER
    79.
    发明申请
    WAVEMETER FOR GAS DISCHARGE LASER 审中-公开
    用于气体放电激光的波导

    公开(公告)号:WO01048881A1

    公开(公告)日:2001-07-05

    申请号:PCT/US2000/033186

    申请日:2000-12-06

    Abstract: An optical configuration to illuminate an etalon (79) in a laser wavemeter (120) with a minimum level of light intensity. The system includes optical components to direct a portion of the laser output beam representing the entire cross section of the beam, through an etalon (79) positioned in an etalon housing, and onto a photodetector (180). A first lens (400) condenses the size of the beam sample, and a second lens (402) re-collimates the beam which then passes into the etalon housing, ensuring that all of the spatial components of the beam are adequately sampled. A diffractive diffusing element (406) is incorporated into the optical path. In a preferred embodiment, the diffractive diffusing element (406) is placed within the etalon housing. In another preferred embodiment, the diffusing element (406) is located up stream but outside the housing in the optical path.

    Abstract translation: 以最小的光强度照射激光波长计(120)中的标准具(79)的光学配置。 该系统包括光学部件,用于通过位于标准外壳中的标准具(79)和光电检测器(180)来引导代表梁整个横截面的激光输出光束的一部分。 第一透镜(400)凝缩束样品的尺寸,并且第二透镜(402)重新准直该光束然后进入标准室壳体,确保光束的所有空间分量被充分地采样。 衍射漫射元件(406)被并入到光路中。 在优选实施例中,衍射扩散元件(406)被放置在标准壳体内。 在另一个优选实施例中,漫射元件(406)位于光路中的上游但外壳的外侧。

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