Abstract:
The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source with a beam delivery to a production line machine. The system includes an enclosed and purged beam path with beam pointing control for delivery the laser beam to a desired location such as the entrance port of the production line machine. Preferred embodiments include equipment for beam attenuation, equipment for automatic feedback beam alignment and equipment for accurate optics module positioning at installation and during maintenance. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.
Abstract:
Feedback timing control equipment and process for an injection seeded modular gas discharge laser (11). A preferred embodiment is a system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 to 10 mJ or greater for integrated outputs of about 20 to 40 Watts or greater. The feedback timing control is programmed to permit in some circumstances discharges timed so that no significant laser energy is output from the system. Use of this technique permits burst mode operation in which the first discharge of a burst is a no-output discharge so that timing parameters for each of the two chambers can be monitored before the first laser output pulse of the burst. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber.
Abstract:
A lithography system and method for cost-effective device manufacture that can employ a new "flash-on-the-fly" mode of operation is disclosed, wherein exposure fields are formed with single pulses of radiation. The system includes a pulsed radiation source (14), an illumination system (24), a mask (M), a projection lens (40) an a workpiece stage (50) that supports a workpiece (W) having an image-bearing surface (WS). A radiation source controller (16) and a workpiece stage position system (60), which includes a metrology device (62), are used to coordinate and control the exposure of the mask with radiation pulses so that adjacent radiation pulses form adjacent exposure fields (EF). Where pulse-to-pulse uniformity from the radiation source is lacking, a pulse stabilization system (18) may be optionally used to attain the desired pulse-to-pulse uniformity in exposure dose. The rapidity at which exposures can be made using a single radiation pulse allows for a very high throughput, which in turn allows for a small-image- field projection lens to be utilized in a cost-effective manner in the manufacture of devices such as semiconductor integrated circuits and the like. The system can also be used in the conventional "step-and-repeat" mode of operation, so that the system owner can decide the most cost-effective mode of operation for any given application.
Abstract:
A high pulse rate pulse power source (20) for supplying controlled high energy electrical pulses at rates of 2000 Hz or greater. The source (20) includes a pulse generating circuit (50) including a charging capacitor (42), a solid state switch (46) and a current limiting inductor. Pulses generated in the pulse generating circuit are compressed in at least two pulse compression circuits and a step-up pulse transformer (56) increases peak voltage to at least 12,000 volts. A very fast regulated power supply (20) is provided for charging the charging capacitor (42) in less than 400 microseconds and a pulse control system including a programmed processor (102) controls the charging of the charging capacitor (42) to an accuracy of less than about one percent at a rate of at least 2000 charges per second.
Abstract:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers (10A, 12A) are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam which is amplified in the second discharge chamber (12). The chambers (10A, 12A) can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator (10) and optimization of pulse energy parameters in the amplifying chamber (12A). A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber (10A, 12A) comprises a single tangential fan (10A, 10) providing sufficient gas flow (11) to permit operation at pulse rates of 4,000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator (10) is equipped with a line narrowing package (16, 16A) having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4,000 Hz or greater to a precision of less than 0.2 pm.
Abstract:
The claimed invention is a tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life releasable lithography lasers with special F2 line narrowing and tuning techniques. This techniques are applied to a seed beam which is operated in a first gain medium. This seed beam is then used to stimulate narrow band lasing in a second gain medium. The resulting very narrow band laser beam is useful for integrated circuit lithography. One preferred embodiment of the invention comprises a laser chamber (211), a gas module (202), a control module (205), a line narrowing module (206), and a pulse power supply module (208).
Abstract:
A burst of ultrashort laser pulses is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse within the burst is generally shorter than 25 ps, preferablyshorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst can be treated as a single "pulse" by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst of laser pulses at each link (22). Conventional wavelengths or their harmonics can be employed.
Abstract:
A reliable modular production quality ArF excimer laser capable of producing laser pulses at repetition rates in the range of 3,000 to 4,000 Hz or greater with pulse repetition energies in the range of about 2mJ to 5mJ or greater with a full width half maximum bandwidth of about 0.4 pm or less and dose stability of less than 0.4 percent. Using this laser as an illumination source, stepper or scanner equipment can produce integrated circuit resolution of 0.10 mu m (100nm) or less, replaceable modules include a laser chamber (80); a modular pulse power system; and a line narrowing module (86) for a given laser power output. The higher repetition rate provides two important advantages. The lower per pulse energy means less optical damage and the larger number of pulses for a specified illumination dose means better dose stability.
Abstract:
An optical configuration to illuminate an etalon (79) in a laser wavemeter (120) with a minimum level of light intensity. The system includes optical components to direct a portion of the laser output beam representing the entire cross section of the beam, through an etalon (79) positioned in an etalon housing, and onto a photodetector (180). A first lens (400) condenses the size of the beam sample, and a second lens (402) re-collimates the beam which then passes into the etalon housing, ensuring that all of the spatial components of the beam are adequately sampled. A diffractive diffusing element (406) is incorporated into the optical path. In a preferred embodiment, the diffractive diffusing element (406) is placed within the etalon housing. In another preferred embodiment, the diffusing element (406) is located up stream but outside the housing in the optical path.
Abstract:
An exposure device has a light source comprising a laser device that is small and easy to maintain. The laser device comprises a laser oscillator for generating a single-wavelength laser beam (LB3) within a wavelength range including infrared and visible regions; an optical amplifier (18) for amplifying a laser beam (LB3); and a wavelength converter for converting the amplified laser beam into ultraviolet light using a nonlinear optical crystal. The optical amplifier (18) includes a plurality of stages of fiber optic amplifiers (22, 25) for sequential amplification of the laser beam (LB3), and a narrow-band filter (24A) and an isolator (IS3) arranged between fiber optic amplifiers.