公开(公告)号：WO2014085315A2

公开(公告)日：2014-06-05

申请号：PCT/US2013/071653

申请日：2013-11-25

Applicant: CORNING INCORPORATED ,  BELLMAN, Robert Alan ,  CHUANG, Ta Ko ,  MANLEY, Robert George ,  QUESADA, Mark Alejandro ,  SACHENIK, Paul Arthur

Inventor： BELLMAN, Robert Alan ,  CHUANG, Ta Ko ,  MANLEY, Robert George ,  QUESADA, Mark Alejandro ,  SACHENIK, Paul Arthur

IPC: C23C14/10

CPC classification number: C23C14/34 ,  C23C14/10 ,  C23C14/35 ,  C23C14/541

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low T g glass, a precursor of a low T g glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200°C.

Abstract translation: 形成气密性阻挡层的方法包括从溅射靶溅射薄膜，其中溅射靶包括诸如低Tg玻璃，低Tg玻璃的前体或铜或锡的氧化物的溅射材料。 在溅射期间，阻挡层中的缺陷的形成被限制在窄范围内并且溅射材料保持在小于200℃的温度。

公开(公告)号：WO2012003161A1

公开(公告)日：2012-01-05

申请号：PCT/US2011/042078

申请日：2011-06-28

Applicant: CORNING INCORPORATED ,  CHUANG, Ta Ko ,  USENKO, Alex

Inventor： CHUANG, Ta Ko ,  USENKO, Alex

IPC: H01L21/20 ,  H01L21/762

CPC classification number: H01L21/2007 ,  H01L21/0206 ,  H01L21/022 ,  H01L21/02326 ,  H01L21/76254

Abstract: A process for preparing a surface of a material that is not bondable to make it bondable to the surface of another material. A non-bondable surface of a semiconductor wafer is treated with oxygen plasma to oxidize the surface of the wafer and make the surface smoother, hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The semiconductor wafer may have a barrier layer thereon formed of a material, such as SixNy or SiNxOy that is not bondable to another substrate, such as a glass substrate. In which case, the oxygen plasma treatment converts the surface of the barrier layer to oxide, such as SiO2, smoothing the surface and making the surface hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The converted oxide layer may be stripped from the barrier layer or semiconductor wafer with an acid, in order to remove contamination on the surface of the barrier layer or semiconductor wafer, the stripped surface may undergo a second oxygen plasma treatment to further smooth the surface, and make the surface hydrophilic and bondable to the surface of another substrate

Abstract translation: 一种用于制备不能使其粘合到另一材料的表面上的材料的表面的方法。 用氧等离子体处理半导体晶片的非接合表面以氧化晶片的表面，并使表面更平滑，亲水并且可粘合到另一衬底（例如玻璃衬底）的表面上。 半导体晶片可以具有由诸如玻璃基板之类的不能与另一基板结合的诸如SixNy或SiNxOy的材料形成的阻挡层。 在这种情况下，氧等离子体处理将阻挡层的表面转化为诸如SiO 2的氧化物，使表面平滑化，并使表面亲水且可粘合到另一基板如玻璃基板的表面。 转换的氧化物层可以用酸从阻挡层或半导体晶片剥离，以便去除阻挡层或半导体晶片的表面上的污染，剥离的表面可以进行第二氧等离子体处理以进一步平滑表面， 并使表面亲水并粘合到另一基底的表面

公开(公告)号：WO2012003157A1

公开(公告)日：2012-01-05

申请号：PCT/US2011/042068

申请日：2011-06-28

Applicant: CORNING INCORPORATED ,  SILICON ON INSULATOR TECHNOLOGIES S.A. ,  CHUANG, Ta Ko ,  CITES, Jeffrey S. ,  DELPRAT, Daniel ,  MOHAMED, Nadia B. ,  USENKO, Alex

Inventor： CHUANG, Ta Ko ,  CITES, Jeffrey S. ,  DELPRAT, Daniel ,  MOHAMED, Nadia B. ,  USENKO, Alex

IPC: H01L21/762

CPC classification number: H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract translation: 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

公开(公告)号：WO2014085315A3

公开(公告)日：2014-07-24

申请号：PCT/US2013071653

申请日：2013-11-25

Applicant: CORNING INC ,  BELLMAN ROBERT ALAN ,  CHUANG TA KO ,  MANLEY ROBERT GEORGE ,  QUESADA MARK ALEJANDRO ,  SACHENIK PAUL ARTHUR

Inventor： BELLMAN ROBERT ALAN ,  CHUANG TA KO ,  MANLEY ROBERT GEORGE ,  QUESADA MARK ALEJANDRO ,  SACHENIK PAUL ARTHUR

IPC: C23C14/10

CPC classification number: C23C14/35 ,  C23C14/10 ,  C23C14/34 ,  C23C14/541

Abstract: A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tg glass, a precursor of a low Tg glass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200°C.

Abstract translation: 形成气密性阻挡层的方法包括从溅射靶溅射薄膜，其中溅射靶包括诸如低Tg玻璃，低Tg玻璃的前体或铜或锡的氧化物的溅射材料。 在溅射期间，阻挡层中的缺陷的形成被限制在窄范围内，溅射材料保持在小于200℃的温度。

公开(公告)号：WO2013119737A3

公开(公告)日：2014-02-27

申请号：PCT/US2013025035

申请日：2013-02-07

Applicant: CORNING INC ,  ABRAMOV ANATOLI ANATOLYEVICH ,  BELLMAN ROBERT ALAN ,  BOOKBINDER DANA CRAIG ,  CHUANG TA-KO ,  DOMEY JEFFREY JOHN ,  ENICKS DARWIN GENE ,  GASKILL LINDA ,  KANG KIAT CHYAI ,  KEMMERER MARVIN WILLIAM ,  KUO KUAN-TING ,  LIN JEN-CHIEH ,  MANLEY ROBERT GEORGE ,  THOMAS JOHN CHRISTOPHER ,  TSENG PEI-LIEN ,  ZHANG JIAN-ZHI JAY

Inventor： ABRAMOV ANATOLI ANATOLYEVICH ,  BELLMAN ROBERT ALAN ,  BOOKBINDER DANA CRAIG ,  CHUANG TA-KO ,  DOMEY JEFFREY JOHN ,  ENICKS DARWIN GENE ,  GASKILL LINDA ,  KANG KIAT CHYAI ,  KEMMERER MARVIN WILLIAM ,  KUO KUAN-TING ,  LIN JEN-CHIEH ,  MANLEY ROBERT GEORGE ,  THOMAS JOHN CHRISTOPHER ,  TSENG PEI-LIEN ,  ZHANG JIAN-ZHI JAY

IPC: H01L21/50

CPC classification number: C03C27/10 ,  B23K26/40 ,  B23K2203/50 ,  B32B7/06 ,  B32B17/06 ,  B65G2249/02 ,  C03B33/07 ,  C03B33/091

Abstract: A method of removing a desired part of a thin sheet (20) from a thin sheet bonded to a carrier (10) by a bonded area (40) that surrounds a non-bonded area (50), wherein the method includes forming a perimeter vent (60) defining a perimeter of the desired part (56), wherein the perimeter vent is disposed within the non-bonded area and has a depth >= 50% of the thickness (22) of the thin sheet. Prior to removing the desired part, a device may be processed onto the thin sheet. In some processes, the carrier is diced so it may be processed in smaller sizes, yet maintains a hermetically sealed edge. After dicing, an additional part of the device may be processed onto the thin sheet, and the desired part is removed by removing a desired part of the thin sheet from the carrier.

Abstract translation: 一种从通过围绕非接合区域（50）的接合区域（40）从结合到载体（10）的薄片去除薄片（20）的期望部分的方法，其中所述方法包括形成周边 限定所需部分（56）的周边的排气口（60），其中所述周边通气口设置在所述非接合区域内，并且具有所述薄片厚度（22）的深度> = 50％。 在去除期望的部件之前，可以在薄片上处理装置。 在一些工艺中，载体被切割，因此可以以较小的尺寸加工，同时保持密封的边缘。 在切割之后，可以将另一部分装置加工到薄片上，并通过从载体上移除所需薄片的一部分来除去所需的部分。

公开(公告)号：WO2013119737A2

公开(公告)日：2013-08-15

申请号：PCT/US2013/025035

申请日：2013-02-07

Applicant: CORNING INCORPORATED ,  ABRAMOV, Anatoli Anatolyevich ,  BELLMAN, Robert Alan ,  BOOKBINDER, Dana Craig ,  CHUANG, Ta-Ko ,  DOMEY, Jeffrey John ,  ENICKS, Darwin Gene ,  GASKILL, Linda ,  KANG, Kiat Chyai ,  KEMMERER, Marvin William ,  KUO, Kuan-Ting ,  LIN, Jen-Chieh ,  MANLEY, Robert George ,  THOMAS, John Christopher ,  TSENG, Pei-Lien ,  ZHANG, Jian-Zhi Jay

Inventor： ABRAMOV, Anatoli Anatolyevich ,  BELLMAN, Robert Alan ,  BOOKBINDER, Dana Craig ,  CHUANG, Ta-Ko ,  DOMEY, Jeffrey John ,  ENICKS, Darwin Gene ,  GASKILL, Linda ,  KANG, Kiat Chyai ,  KEMMERER, Marvin William ,  KUO, Kuan-Ting ,  LIN, Jen-Chieh ,  MANLEY, Robert George ,  THOMAS, John Christopher ,  TSENG, Pei-Lien ,  ZHANG, Jian-Zhi Jay

IPC: H01L21/50

CPC classification number: C03C27/10 ,  B23K26/40 ,  B23K2203/50 ,  B32B7/06 ,  B32B17/06 ,  B65G2249/02 ,  C03B33/07 ,  C03B33/091

Abstract: A method of removing a desired part of a thin sheet (20) from a thin sheet bonded to a carrier (10) by a bonded area (40) that surrounds a non-bonded area (50), wherein the method includes forming a perimeter vent (60) defining a perimeter of the desired part (56), wherein the perimeter vent is disposed within the non-bonded area and has a depth.. 50% of the thickness (22) of the thin sheet. Prior to removing the desired part, a device may be processed onto the thin sheet. In some processes, the carrier is diced so it may be processed in smaller sizes, yet maintains a hermetically sealed edge. After dicing, an additional part of the device may be processed onto the thin sheet, and the desired part is removed by removing a desired part of the thin sheet from the carrier.

Abstract translation: 一种从通过围绕非接合区域（50）的接合区域（40）从结合到载体（10）的薄片去除薄片（20）的期望部分的方法，其中所述方法包括形成周边 限定所需部分（56）的周边的排气口（60），其中所述周边通气口设置在所述非接合区域内并具有所述薄片厚度（22）的深度。 在移除所需部件之前，可以将设备加工到薄片上。 在一些工艺中，载体被切割，因此可以以较小的尺寸加工，同时保持密封的边缘。 在切割之后，可以将另一部分装置加工到薄片上，并且通过从载体上移除所需薄片的所需部分来除去所需的部分。

公开(公告)号：WO2012166753A1

公开(公告)日：2012-12-06

申请号：PCT/US2012/039911

申请日：2012-05-30

Applicant: CORNING INCORPORATED ,  CHUANG, Ta Ko ,  HARVEY, Daniel Ralph ,  STRELTSOV, Alexander Mikhailovich

Inventor： CHUANG, Ta Ko ,  HARVEY, Daniel Ralph ,  STRELTSOV, Alexander Mikhailovich

IPC: C03C15/00 ,  C03C23/00

CPC classification number: C03C23/002 ,  C03C15/00 ,  C03C23/0025 ,  G02B6/136 ,  G02B2006/1213

Abstract: A method for fabricating a high-density array of holes in glass comprises providing a glass sheet having a front surface and irradiating the glass sheet with a laser beam so as to produce open holes extending into the glass sheet from the front surface of the glass sheet. The beam creates thermally induced residual stress within the glass around the holes, and after irradiating, the glass sheet is annealed to eliminate or reduce thermal stress caused by the step of irradiating. The glass sheet is then etched to produce the final hole size. Preferably, the glass sheet is also annealed before the step of irradiating, at sufficiently high temperature for a sufficient time to render the glass sheet dimensionally stable during the step of annealing after irradiating.

Abstract translation: 一种在玻璃中制造高密度孔阵列的方法，包括提供具有前表面的玻璃片，并用激光束照射玻璃片，以便从玻璃板的前表面产生延伸到玻璃片中的开孔 。 光束在孔周围的玻璃内产生热致残余应力，并且在照射之后，玻璃板被退火以消除或降低由照射步骤引起的热应力。 然后对玻璃板进行蚀刻以产生最终的孔尺寸。 优选地，在足够高的温度下照射步骤之前，玻璃板也经过退火处理足够的时间以使玻璃板在照射后的退火步骤中尺寸稳定。