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1.发明申请
公开(公告)号：WO2013109401A1
公开(公告)日：2013-07-25
申请号：PCT/US2012/072051
申请日：2012-12-28
Applicant: DUSSARRAT, Christian , KUCHENBEISER, Glenn , PALLEM, Venkateswara, R. , OMARJEE, Vincent, M. , BESANCON, Brian , WANG, Ziyun
Inventor： DUSSARRAT, Christian , KUCHENBEISER, Glenn , PALLEM, Venkateswara, R. , OMARJEE, Vincent, M. , BESANCON, Brian , WANG, Ziyun
IPC: C23C16/455 , C23C16/18 , H01L21/205
CPC classification number: H01L21/02208 , C23C16/401 , C23C16/405 , C23C16/45553 , H01L21/02148 , H01L21/02219 , H01L21/0228
Abstract: Disclosed are silicon containing compounds and their use in vapor deposition methods of hafnium silicate films having a desired silicon concentration. More particularly, deposition of hafnium silicate films by atomic layer deposition using moisture and the disclosed silicon containing compounds produce films having a desired silicon concentration.
Abstract translation: 公开了含硅化合物及其在具有期望的硅浓度的硅酸铪膜的气相沉积方法中的用途。 更具体地，通过使用水分的原子层沉积来沉积硅酸铪膜，并且所公开的含硅化合物产生具有期望的硅浓度的膜。
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2.发明申请PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS 审中-公开含有含铅的前体的制备和含有包含膜的沉积物
公开(公告)号：WO2009149372A1
公开(公告)日：2009-12-10
申请号：PCT/US2009/046443
申请日：2009-06-05
Applicant: L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , PALLEM, Venkateswara, R. , DUSSARRAT, Christian
Inventor： PALLEM, Venkateswara, R. , DUSSARRAT, Christian
IPC: C23C16/18 , C23C16/40 , C07C257/14 , C07F17/00
CPC classification number: H01L21/02192 , C07C257/14 , C07F17/00 , C23C16/18 , C23C16/409 , C23C16/45531
Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。
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3.发明申请ORGANOSILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS 审中-公开用于ALD / CVD含硅膜应用的有机硅前驱体
公开(公告)号：WO2014015248A1
公开(公告)日：2014-01-23
申请号：PCT/US2013/051264
申请日：2013-07-19
Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , DUSSARRAT, Christian , KUCHENBEISER, Glenn , PALLEM, Venkateswara R.
Inventor： DUSSARRAT, Christian , KUCHENBEISER, Glenn , PALLEM, Venkateswara R.
IPC: C23C16/24 , C23C16/448
CPC classification number: C07F7/025 , B05D1/60 , C23C16/30 , C23C16/345 , C23C16/36 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45553 , H01L21/02216 , H01L21/02271 , H01L21/0228 , H01L21/02532
Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon- containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
Abstract translation: 公开了含Si的薄膜形成前体，其合成方法及其使用方法使用蒸镀法制造半导体，光伏，LCD-TFT，平板型器件，耐火材料 ，或航空。
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4.发明申请ORGANOSILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS 审中-公开有机硅前驱体用于ALD / CVD含硅膜应用
公开(公告)号：WO2014015232A1
公开(公告)日：2014-01-23
申请号：PCT/US2013/051244
申请日：2013-07-19
Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , DUSSARRAT, Christian , KUCHENBEISER, Glenn , PALLEM, Venkateswara R.
Inventor： DUSSARRAT, Christian , KUCHENBEISER, Glenn , PALLEM, Venkateswara R.
IPC: C23C16/24 , C23C16/448
CPC classification number: C07F7/025 , B05D1/60 , C23C16/30 , C23C16/345 , C23C16/36 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45553 , H01L21/02216 , H01L21/02271 , H01L21/0228 , H01L21/02532
Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
Abstract translation: 公开了含Si的薄膜形成前体，其合成方法以及使用该含Si薄膜使用气相沉积工艺沉积含硅薄膜以制造半导体，光伏器件，LCD-TFT， 平板式设备，耐火材料或航空学。
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5.发明申请
公开(公告)号：WO2011020042A3
公开(公告)日：2011-06-09
申请号：PCT/US2010045506
申请日：2010-08-13
Applicant: AIR LIQUIDE , AIR LIQUIDE AMERICAN , DUSSARRAT CHRISTIAN , OMARJEE VINCENT M , PALLEM VENKATESWARA R
Inventor： DUSSARRAT CHRISTIAN , OMARJEE VINCENT M , PALLEM VENKATESWARA R
Abstract: Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
Abstract translation: 公开了含铪和锆的前体及其提供方法。 所公开的前体包括配体和至少一个脂肪族基团作为取代基，所述取代基被选择为具有比常规取代基更大的自由度。 所公开的前体可用于使用气相沉积方法如化学气相沉积或原子层沉积来沉积含铪或锆的层。
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Patent Agency Ranking6.发明申请PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS 审中-公开含有含铅的前体的制备和含有包含膜的沉积物
公开(公告)号：WO2009122361A3
公开(公告)日：2010-01-14
申请号：PCT/IB2009051359
申请日：2009-03-31
Applicant: AIR LIQUIDE , PALLEM VENKATESWARA R , FEIST BENJAMIN J , STAFFORD NATHAN , DUSSARRAT CHRISTIAN
Inventor： PALLEM VENKATESWARA R , FEIST BENJAMIN J , STAFFORD NATHAN , DUSSARRAT CHRISTIAN
IPC: C23C16/40
Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent.
Abstract translation: 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 在某些实施方案中，所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配位体。
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公开(公告)号：WO2017007986A1
公开(公告)日：2017-01-12
申请号：PCT/US2016/041435
申请日：2016-07-08
Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , AMERICAN AIR LIQUIDE, INC. , FAFARD, Claudia , KUCHENBEISER, Glenn , PALLEM, Venkateswara R. , GIRARD, Jean-Marc , NODA, Naoto
Inventor： FAFARD, Claudia , KUCHENBEISER, Glenn , PALLEM, Venkateswara R. , GIRARD, Jean-Marc , NODA, Naoto
IPC: C23C16/42
CPC classification number: C23C16/42 , C07F7/10 , C23C16/30 , C23C16/45553
Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted halocarbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.
Abstract translation: 公开了包含烷基氨基取代的卤代碳硅烷前体的含Si成膜组合物，其合成方法及其用于气相沉积工艺。
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公开(公告)号：WO2016007708A1
公开(公告)日：2016-01-14
申请号：PCT/US2015/039681
申请日：2015-07-09
Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , FAFARD, Claudia , KUCHENBEISER, Glenn , PALLEM, Venkateswara R. , GIRARD, Jean-Marc
Inventor： FAFARD, Claudia , KUCHENBEISER, Glenn , PALLEM, Venkateswara R. , GIRARD, Jean-Marc
CPC classification number: C07F7/10 , C09D1/00 , C23C16/24 , C23C16/45525
Abstract: Disclosed are Si-containing film forming compositions comprising alkylamino-substituted carbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.
Abstract translation: 公开了包含烷基氨基取代的碳硅烷前体的含Si成膜组合物，其合成方法及其用于气相沉积工艺。
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公开(公告)号：WO2013177292A1
公开(公告)日：2013-11-28
申请号：PCT/US2013/042244
申请日：2013-05-22
Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , PALLEM, Venkateswara, R.
Inventor： PALLEM, Venkateswara, R.
IPC: C23C16/06 , C23C16/448
CPC classification number: C23C16/405 , C07F7/006 , C07F7/28 , C23C16/45553
Abstract: Disclosed are titanium-containing precursors and methods of synthesizing the same. The precursors may be used to deposit titanium oxide, titanium silicon oxide and titanium-metal oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
Abstract translation: 公开了含钛前体及其合成方法。 可以使用诸如化学气相沉积或原子层沉积的气相沉积方法将前体用于沉积氧化钛，二氧化硅氧化物和含钛 - 金属氧化物的层。
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公开(公告)号：WO2013177284A1
公开(公告)日：2013-11-28
申请号：PCT/US2013/042230
申请日：2013-05-22
Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , PALLEM, Venkateswara R.
Inventor： PALLEM, Venkateswara R.
IPC: C23C16/00 , C23C16/448
CPC classification number: C07F7/003 , C07F7/006 , C23C16/405
Abstract: Disclosed are hafnium-containing precursors and methods of synthesizing the same. The precursors may be used to deposit hafnium oxide, hafnium silicon oxide and hafnium-metal oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
Abstract translation: 公开了含铪前体及其合成方法。 可以使用诸如化学气相沉积或原子层沉积的气相沉积方法将前体用于沉积氧化铪，氧化铪铪和含铪金属氧化物的层。
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