公开(公告)号：WO2011160105A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041013

申请日：2011-06-18

Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  AVILA ANTHONY M ,  WODJENSKI MICHAEL J ,  DESPRES JOSEPH R ,  BAUM THOMAS H

Inventor： SWEENEY JOSEPH D ,  AVILA ANTHONY M ,  WODJENSKI MICHAEL J ,  DESPRES JOSEPH R ,  BAUM THOMAS H

IPC: H01L21/66 ,  H01L21/02

CPC classification number: F17D3/01 ,  F17D3/00 ,  G05D7/0635 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/30466 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0324 ,  Y10T137/86389

Abstract: Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.

Abstract translation: 用于确定流体供应容器的端点的装置和方法，其中通过设置在流体供应容器的内部容积中的流动通道在流体流动建立时具有静态流动限制装置和可选择性致动的阀元件来控制流体流动。 端点确定可以用于终止从流体供应容器供应的流体和/或从流体耗尽的供应容器切换到新鲜容器，以便连续或更新流体供应操作。 该设备和方法适用于诸如离子注入机之类的流体分解装置。

公开(公告)号：WO2008057616A3

公开(公告)日：2009-04-09

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：WO2006113621A3

公开(公告)日：2007-03-01

申请号：PCT/US2006014407

申请日：2006-04-14

Applicant: ADVANCED TECH MATERIALS ,  VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

Inventor： VISINTIN PAMELA M ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: B08B3/00

CPC classification number: C11D3/042 ,  C11D3/2086 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/3427 ,  C11D3/368 ,  C11D3/43 ,  C11D7/08 ,  C11D7/261 ,  C11D7/30 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D11/0047

Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.

Abstract translation: 描述了用于从致密图案化的微电子器件去除体积和离子注入的光致抗蚀剂和/或蚀刻后残留物的方法和组合物。 该组合物包括共溶剂，螯合剂，任选的离子配对试剂和任选的表面活性剂。 该组合物可以进一步包括稠密的流体。 组合物有效地从微电子器件去除光致抗蚀剂和/或蚀刻后残留物，而基本上不会过度蚀刻下面的含硅层和金属互连材料。

公开(公告)号：WO2005104682A3

公开(公告)日：2007-02-01

申请号：PCT/US2005012301

申请日：2005-04-12

Applicant: ADVANCED TECH MATERIALS ,  KORZENSKI MICHAEL B ,  BAUM THOMAS H

Inventor： KORZENSKI MICHAEL B ,  BAUM THOMAS H

IPC: C11D7/50 ,  B08B7/00 ,  C11D3/00 ,  C11D3/02 ,  C11D3/43 ,  C11D7/02 ,  C11D11/00 ,  G03F7/40 ,  G03F7/42

CPC classification number: C11D11/0047 ,  B08B7/0021 ,  C11D3/0042 ,  C11D3/02 ,  C11D3/044 ,  C11D3/43 ,  C11D7/02 ,  C11D7/5004 ,  G03F7/40 ,  G03F7/422 ,  G03F7/425 ,  G03F7/426

Abstract: A method and composition for removing ion-implanted photoresist from semiconductor substrates having such photoresist is described. The removal composition contains supercritical CO 2 (SCCO 2 ), a co-solvent and a reducing agent for use in removing ion-implanted photoresist. Such removal composition overcomes the intrinsic deficiency of SCCO 2 as a removal reagent, viz., the non-polar character of SCCO 2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the photoresist and that must be removed from the semiconductor substrate for efficient cleaning.

Abstract translation: 描述了从具有这种光致抗蚀剂的半导体衬底去除离子注入的光致抗蚀剂的方法和组合物。 去除组合物含有超临界CO 2（SCCO 2 H 2），用于除去离子注入的光致抗蚀剂的共溶剂和还原剂。 这种去除组合物克服了作为去除试剂的SCCO 2 N的固有缺陷，即SCCO 2的非极性特征，并且其不能溶解诸如无机物质的物质 盐和极性有机化合物，其存在于光致抗蚀剂中并且必须从半导体衬底除去以进行有效的清洁。

公开(公告)号：WO2005004199A3

公开(公告)日：2006-08-10

申请号：PCT/US2004019088

申请日：2004-06-15

Applicant: ADVANCED TECH MATERIALS ,  KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H ,  MINSEK DAVID ,  GHENCIU ELIODOR G

Inventor： KORZENSKI MICHAEL B ,  XU CHONGYING ,  BAUM THOMAS H ,  MINSEK DAVID ,  GHENCIU ELIODOR G

IPC: C11D1/00 ,  B08B3/04 ,  B08B3/08 ,  C11D3/30 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311

CPC classification number: G03F7/425 ,  C11D7/261 ,  C11D7/28 ,  C11D7/3209 ,  C11D7/5013 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133 ,  Y10S134/902 ,  Y10S438/906

Abstract: A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semiconductor wafers to remove post-ashing residues therefrom.

Abstract translation: 包含超临界流体和至少一种选自氟物质的添加剂，以及伯胺和/或仲胺，任选与共溶剂，低k物质侵袭抑制剂和/或表面活性剂组合的组合物。 该组合物具有用于清洁半导体晶片以从其中除去灰化后残留物的特殊用途。

公开(公告)号：WO2004049398B1

公开(公告)日：2005-07-14

申请号：PCT/US0337171

申请日：2003-11-19

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  BOROVIK ALEXANDER S ,  BAUM THOMAS H

IPC: H01L21/316 ,  H01L21/31 ,  B32B5/16 ,  H01L21/469

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/31695 ,  Y10T428/2982 ,  Y10T428/2985 ,  Y10T428/2998

Abstract: A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Abstract translation: 用于形成电介质多孔膜的致孔剂材料。 致孔剂材料可以包括硅基电介质前体和含硅致孔剂。 多孔膜可以具有基本均匀的介电常数值。 形成多孔膜的方法以及采用通过多孔膜隔离的电路特征的半导体器件也是存在的。

公开(公告)号：WO2004059700A3

公开(公告)日：2004-11-04

申请号：PCT/US0340439

申请日：2003-12-17

Applicant: ADVANCED TECH MATERIALS

Inventor： MINSEK DAVID W ,  MURPHY MELISSA K ,  BERNHARD DAVID D ,  BAUM THOMAS H

IPC: C11D7/06 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  G03F7/42 ,  H01L21/306 ,  H01L21/311 ,  G03C5/00 ,  B08B3/00

CPC classification number: C11D3/30 ,  C11D1/72 ,  C11D3/044 ,  C11D3/3947 ,  C11D3/3955 ,  C11D3/3956 ,  C11D3/43 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  Y10S438/906

Abstract: Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

Abstract translation: 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。

公开(公告)号：WO2004036175A3

公开(公告)日：2004-06-17

申请号：PCT/US0332521

申请日：2003-10-15

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK ,  CHEN PHILIP S H ,  NEUNER JEFFREY W ,  WELCH JAMES ,  STAWASZ MICHELE ,  BAUM THOMAS H ,  KING MACKENZIE E ,  CHEN ING-SHIN ,  ROEDER JEFFREY F

IPC: G01N33/00 ,  G01N9/00

CPC classification number: G01N27/128 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32981 ,  Y10T29/49007 ,  Y10T436/17 ,  Y10T436/19

Abstract: A gas detector (54) and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element (8) that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package (6) so that the package becomes a platform of the detector.

Abstract translation: 气体检测器（54）和用于检测含有气体的气体中的含氟物质的方法，例如用HF，NF3等进行蚀刻清洗的半导体加工工具的流出物。优选结构布置中的检测器采用微机电 系统（MEMS）的装置结构和/或自立式金属元件（8），其在需要高温感测时用作感测部件并且可选地作为热源。 独立金属元件可以直接制造在标准芯片载体/器件封装（6）上，使得封装成为检测器的平台。

公开(公告)号：WO2010144439A3

公开(公告)日：2011-03-03

申请号：PCT/US2010037759

申请日：2010-06-08

Applicant: ADVANCED TECH MATERIALS ,  LURCOTT STEVEN M ,  HUGHES JOHN E Q ,  WRSCHKA PETER ,  BAUM THOMAS H ,  WARE DONALD D ,  ZOU PENG

Inventor： LURCOTT STEVEN M ,  HUGHES JOHN E Q ,  WRSCHKA PETER ,  BAUM THOMAS H ,  WARE DONALD D ,  ZOU PENG

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/20 ,  H01L21/302 ,  H01L21/304

CPC classification number: B01F15/0203 ,  B01F3/0861 ,  B01F15/0258 ,  B01F2003/0896 ,  B65B3/14 ,  B67D7/025 ,  B67D7/0261 ,  B67D7/0283 ,  B67D7/741

Abstract: Systems and methods for delivering fluid-containing feed materials to process equipment are disclosed. A liner-based pressure dispensing vessel is subjected to filling by application of vacuum between the liner and overpack. Multiple feed material flow controllers of different calibrated flow ranges may be selectively operated in parallel for a single feed material. Feed material blending and testing for scale-up may be performed with feed materials supplied by multiple liner-based pressure dispensing containers. A gravimetric system may be used to determine concentration of at least one component of a multi-component solution or mixture.

Abstract translation: 公开了用于将含流体的进料传送到加工设备的系统和方法。 基于衬管的压力分配容器通过在衬套和外包装之间施加真空而进行填充。 不同校准流量范围的多个进料流量控制器可以针对单个进料进行选择性并行操作。 用于放大的进料混合和测试可以通过由多个基于衬管的压力分配容器供应的进料进行。 重量分析系统可用于测定多组分溶液或混合物中至少一种组分的浓度。

公开(公告)号：WO2008057616A8

公开(公告)日：2010-03-18

申请号：PCT/US2007063830

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

Inventor： HUNKS WILLIAM ,  CHEN TIANNIU ,  XU CHONGYING ,  ROEDER JEFFREY F ,  BAUM THOMAS H ,  PETRUSKA MELISSA A ,  STENDER MATTHIAS ,  CHEN PHILIP S H ,  STAUF GREGORY T ,  HENDRIX BRYAN C

IPC: C23C16/00 ,  H01L21/20 ,  H01L31/20

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/902 ,  C07F9/904 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这种前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。