公开(公告)号：WO2007030673A2

公开(公告)日：2007-03-15

申请号：PCT/US2006/034953

申请日：2006-09-07

申请人： APPLIED MATERIALS, INC. ,  MUTHUKRISHNAN, Shankar ,  GOYANI, Tejal ,  SHARANGPANI, Rahul ,  KHER, Shreyas, S. ,  NARWANKAR, Pravin, K. ,  AHMED, Khaled, Z. ,  MA, Yi

发明人： MUTHUKRISHNAN, Shankar ,  GOYANI, Tejal ,  SHARANGPANI, Rahul ,  KHER, Shreyas, S. ,  NARWANKAR, Pravin, K. ,  AHMED, Khaled, Z. ,  MA, Yi

IPC分类号： C23C16/00

CPC分类号： C23C16/308 ,  C23C16/401 ,  C23C16/56

摘要： In one embodiment, a method for forming a morphologically stable dielectric material is provided which includes exposing a substrate to a hafnium precursor, a silicon precursor and an oxidizing gas to form hafnium silicate material during a chemical vapor deposition (CVD) process and subsequently and optionally exposing the substrate to a post deposition anneal, a nitridation process and a thermal annealing process. In some examples, the hafnium and silicon precursors used during a metal-organic CVD (MOCVD) process are alkylamino compounds, such as tetrakis(diethylamido) hafnium (TDEAH) and tris(dimethylamido) silane (Tris-DMAS). In another embodiment, other metal precursors may be used to form a variety of metal silicates containing tantalum, titanium, aluminum, zirconium, lanthanum, or combinations thereof.

摘要翻译： 在一个实施方案中，提供了一种用于形成形态稳定的电介质材料的方法，其包括在化学气相沉积（CVD）工艺期间将衬底暴露于铪前体，硅前体和氧化气体以形成硅酸铪材料，随后和任选地 将衬底暴露于后沉积退火，氮化工艺和热退火工艺。 在一些实例中，在金属 - 有机CVD（MOCVD）方法中使用的铪和硅前体是烷基氨基化合物，例如四（二乙基氨基）铪（TDEAH）和三（二甲基氨基）硅烷（Tris-DMAS）。 在另一个实施方案中，其它金属前体可用于形成含有钽，钛，铝，锆，镧或其组合的各种金属硅酸盐。

公开(公告)号：WO2016094271A1

公开(公告)日：2016-06-16

申请号：PCT/US2015/064194

申请日：2015-12-07

申请人： APPLIED MATERIALS, INC.

发明人： YONEHARA, Takao ,  NARWANKAR, Pravin, K. ,  FRANKEL, Jonathan, S.

IPC分类号： H01L31/18 ,  H01L21/683 ,  H01L21/687 ,  H01L21/822

CPC分类号： H01L31/1804 ,  H01L21/6833 ,  H01L21/6838 ,  H01L21/68785 ,  H01L31/1876

摘要： Methods and systems for all wrap around porous silicon formation are provided herein. In some embodiments, a substrate holder used for all wrap around porous silicon formation may include a body having a tapered opening along a first edge of the body, wherein the tapered opening is configured to release byproduct gases produced during porous silicon formation on a substrate supported by the substrate holder, a first vacuum channel formed in the body and extending to a first surface of the body, and a first sealing element disposed on the first surface of the body and fluidly coupled to the first vacuum channel, where in the first sealing element supports the substrate when disposed thereon.

摘要翻译： 本文提供了所有环绕多孔硅形成的方法和系统。 在一些实施例中，用于全部包裹多孔硅结构的衬底保持器可以包括具有沿着主体的第一边缘的锥形开口的本体，其中锥形开口被配置为释放在支撑的衬底上的多孔硅形成期间产生的副产物气体 通过所述衬底保持器，形成在所述主体中并延伸到所述主体的第一表面的第一真空通道以及设置在所述主体的所述第一表面上并且流体耦合到所述第一真空通道的第一密封元件，其中在所述第一密封 元件在其上布置时支撑基板。

公开(公告)号：WO2013116485A1

公开(公告)日：2013-08-08

申请号：PCT/US2013/024091

申请日：2013-01-31

申请人： APPLIED MATERIALS, INC. ,  YUDOVSKY, Joseph ,  HOFMANN, Ralf ,  OH, Jeonghoon ,  XIA, Li-qun ,  FUJITA, Toshiaki ,  NARWANKAR, Pravin, K. ,  PATIBANDLA, Nag, B. ,  SATYA, Srinivas ,  WU, Banqiu

发明人： YUDOVSKY, Joseph ,  HOFMANN, Ralf ,  OH, Jeonghoon ,  XIA, Li-qun ,  FUJITA, Toshiaki ,  NARWANKAR, Pravin, K. ,  PATIBANDLA, Nag, B. ,  SATYA, Srinivas ,  WU, Banqiu

IPC分类号： H01L21/205

CPC分类号： C23C16/54 ,  B05C13/00 ,  C23C16/45551

摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.

摘要翻译： 提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。 每个衬底位于设置在衬底支撑组件上的衬底载体上。 多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。 处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。 每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。 因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。 每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

公开(公告)号：WO2013033443A3

公开(公告)日：2013-03-07

申请号：PCT/US2012/053202

申请日：2012-08-30

申请人： APPLIED MATERIALS, INC. ,  GRIFFITH CRUZ, Joe ,  NARWANKAR, Pravin, K. ,  SUNDARRAJAN, Arvind ,  NARASIMHAN, Murali ,  SREEKALA, Subbalakshmi ,  PUSHPARAJ, Victor

发明人： GRIFFITH CRUZ, Joe ,  NARWANKAR, Pravin, K. ,  SUNDARRAJAN, Arvind ,  NARASIMHAN, Murali ,  SREEKALA, Subbalakshmi ,  PUSHPARAJ, Victor

IPC分类号： H01L21/28 ,  B82B3/00

摘要： An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

公开(公告)号：WO2011034751A3

公开(公告)日：2011-03-24

申请号：PCT/US2010/047972

申请日：2010-09-07

申请人： APPLIED MATERIALS, INC. ,  HAAS, Dieter ,  NARWANKAR, Pravin, K. ,  THAKUR, Randhir P. S.

发明人： HAAS, Dieter ,  NARWANKAR, Pravin, K. ,  THAKUR, Randhir P. S.

IPC分类号： H01L21/205 ,  C23C16/54

摘要： Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.

公开(公告)号：WO2004070796A2

公开(公告)日：2004-08-19

申请号：PCT/US2004/003442

申请日：2004-02-04

申请人： APPLIED MATERIALS, INC. ,  NARWANKAR, Pravin, K. ,  MINER, Gary ,  LEPERT, Araud

发明人： NARWANKAR, Pravin, K. ,  MINER, Gary ,  LEPERT, Araud

IPC分类号： H01L

CPC分类号： H01L21/28185 ,  H01L21/3105 ,  H01L21/3144 ,  H01L29/518 ,  H01L29/66181

摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

摘要翻译： 一种形成包括氮的电介质膜的方法。 该方法包括使用氮化气体和快速热退火工艺将氮合并到电介质膜中，其中使用等于或小于约10托的超低压用于快速热退火工艺。

公开(公告)号：WO2013138216A1

公开(公告)日：2013-09-19

申请号：PCT/US2013/030118

申请日：2013-03-11

申请人： APPLIED MATERIALS, INC. ,  THOMPSON, David ,  NARWANKAR, Pravin, K. ,  SRINIVASAN, Swaminathan ,  CHATTERJEE, Sukti ,  MAYUR, Abhilash ,  MAQSOOD, Kashif

发明人： THOMPSON, David ,  NARWANKAR, Pravin, K. ,  SRINIVASAN, Swaminathan ,  CHATTERJEE, Sukti ,  MAYUR, Abhilash ,  MAQSOOD, Kashif

IPC分类号： C23C16/50 ,  C23C16/44

CPC分类号： C23C16/45551 ,  C23C16/45548 ,  C23C16/483

摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate and at least one laser source emitting a laser beam adjacent the gas distribution plate to activate gaseous species from the gas distribution plate. Also provided are gas distribution plates with elongate gas injector ports where the at least one laser beam is directed along the length of the elongate gas injectors.

摘要翻译： 提供了原子层沉积设备和方法，包括气体分配板和发射与气体分配板相邻的激光束的至少一个激光源，以激活来自气体分配板的气态物质。 还提供了具有细长气体喷射器端口的气体分配板，其中至少一个激光束沿着细长气体喷射器的长度被引导。

公开(公告)号：WO2011028434A2

公开(公告)日：2011-03-10

申请号：PCT/US2010/046069

申请日：2010-08-20

申请人： APPLIED MATERIALS, INC. ,  PUSHPARAJ, Victor, L. ,  NARWANKAR, Pravin, K. ,  NALAMASU, Omkaram

发明人： PUSHPARAJ, Victor, L. ,  NARWANKAR, Pravin, K. ,  NALAMASU, Omkaram

IPC分类号： H01M4/04 ,  H01M4/66 ,  H01G9/058 ,  H01B3/10 ,  H01M10/0525

CPC分类号： H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

摘要： Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300C and about 600C, and depositing a conformal layer of cathodic material over the conformal polymeric layer.

摘要翻译： 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

公开(公告)号：WO2007001832A1

公开(公告)日：2007-01-04

申请号：PCT/US2006/022997

申请日：2006-06-13

申请人： APPLIED MATERIALS, INC. ,  MUTHUKRISHNAN, Shankar ,  SHARANGPANI, Rahul ,  GOYANI, Tejal ,  NARWANKAR, Pravin, K. ,  KHER, Shreyas, S. ,  AHMED, Khaled, Z. ,  MA, Yi

发明人： MUTHUKRISHNAN, Shankar ,  SHARANGPANI, Rahul ,  GOYANI, Tejal ,  NARWANKAR, Pravin, K. ,  KHER, Shreyas, S. ,  AHMED, Khaled, Z. ,  MA, Yi

IPC分类号： C23C16/56 ,  C23C16/40 ,  H01L21/314

CPC分类号： H01L21/0228 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4488 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31637 ,  H01L21/31645

摘要： In one embodiment, a method for forming a dielectric material is provided which includes exposing a substrate sequentially to a metal-containing precursor and an oxidizing gas while forming metal oxide during an atomic layer deposition (ALD) process and subsequently exposing the substrate to an inert plasma process and a thermal annealing process. Generally, the metal oxide contains hafnium, tantalum, titanium, aluminum, zirconium, lanthanum, or combinations thereof. In one example, the substrate is exposed to an inert plasma gas that is free or substantially free of nitrogen. Subsequently, the substrate is exposed to an environment of oxygen during a thermal annealing process. In another example, a metal oxide material is formed during an ALD process by exposing the substrate sequentially to a metal precursor and an oxidizing gas containing water vapor. The water vapor may be formed from a catalytic water vapor generator consuming a hydrogen source and an oxygen source.

摘要翻译： 在一个实施例中，提供了一种用于形成介电材料的方法，其包括在原子层沉积（ALD）工艺期间，将衬底顺序地暴露于含金属的前体和氧化气体同时形成金属氧化物，并随后将衬底暴露于惰性 等离子体工艺和热退火工艺。 通常，金属氧化物含有铪，钽，钛，铝，锆，镧或其组合。 在一个实例中，将基底暴露于游离或基本上不含氮的惰性等离子体气体。 随后，在热退火过程中将衬底暴露于氧气环境。 在另一个实例中，在ALD工艺期间通过将衬底依次暴露于金属前体和含有水蒸气的氧化气体而形成金属氧化物材料。 水蒸汽可以由消耗氢源和氧源的催化水蒸汽发生器形成。

公开(公告)号：WO2005117086A1

公开(公告)日：2005-12-08

申请号：PCT/US2005/016606

申请日：2005-05-12

申请人： APPLIED MATERIALS, INC. ,  OLSEN, Christopher ,  NARWANKAR, Pravin, K. ,  KHER, Shreyas, S. ,  THAKUR, Randhir ,  MUTHUKRISHNAN, Shankar ,  KRAUS, Philip, A.

发明人： OLSEN, Christopher ,  NARWANKAR, Pravin, K. ,  KHER, Shreyas, S. ,  THAKUR, Randhir ,  MUTHUKRISHNAN, Shankar ,  KRAUS, Philip, A.

IPC分类号： H01L21/314

CPC分类号： H01L21/3141 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31637 ,  H01L21/31645 ,  H01L29/517

摘要： Embodiments of the invention provide methods for forming a dielectric stack by exposing a substrate to a sequence of deposition, nitridation and annealing processes. In one example, a method includes exposing the substrate to a deposition process to form a dielectric layer thereon, exposing the substrate to a nitridation process to form a nitride layer thereon, exposing the substrate to an annealing process and exposing the substrate sequentially to the deposition and nitridation processes while periodically and intermediately exposing the substrate to the annealing process to form a dielectric material having a predetermined thickness. Generally, a nitrogen plasma is used during the nitridation process to form a nitrogen concentration within a range from about 5 atomic percent (at%) to about 25 at%. The dielectric layers usually contain oxygen and at least one additional element, such as hafnium, tantalum, titanium, aluminum, zirconium, lanthanum, silicon or combinations thereof.

摘要翻译： 本发明的实施例提供了通过将衬底暴露于一系列沉积，氮化和退火工艺来形成电介质叠层的方法。 在一个示例中，一种方法包括将衬底暴露于沉积工艺以在其上形成介电层，将衬底暴露于氮化工艺以在其上形成氮化物层，将衬底暴露于退火工艺，并将衬底依次暴露于沉积 和氮化过程，同时周期性地将衬底暴露于退火过程中，以形成具有预定厚度的电介质材料。 通常，在氮化过程中使用氮等离子体以形成在约5原子百分比（at％）至约25at％的范围内的氮浓度。 电介质层通常含有氧和至少一种附加元素，例如铪，钽，钛，铝，锆，镧，硅或其组合。