公开(公告)号：WO2013025994A2

公开(公告)日：2013-02-21

申请号：PCT/US2012/051351

申请日：2012-08-17

Applicant: CORNELL UNIVERSITY ,  BUHRMAN, Robert, A. ,  LIU, Luqiao ,  RALPH, Daniel, C. ,  PAI, Chi-feng

Inventor： BUHRMAN, Robert, A. ,  LIU, Luqiao ,  RALPH, Daniel, C. ,  PAI, Chi-feng

IPC: G11C11/15 ,  H01L27/115 ,  H01L21/8247

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  G11C16/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/04 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

Abstract: An ST-MRAM structure, a method for fabricating the ST-MRAM structure and a method for operating an ST-MRAM device that results from the ST-MRAM structure each utilize a spin Hall effect base layer that contacts a magnetic free layer and effects a magnetic moment switching within the magnetic free layer as a result of a lateral switching current within the spin Hall effect base layer. This resulting ST-MRAM device uses an independent sense current and sense voltage through a magnetoresistive stack that includes a pinned layer, a non-magnetic spacer layer and the magnetic free layer which contacts the spin Hall effect base layer. Desirable non-magnetic conductor materials for the spin Hall effect base layer include certain types of tantalum materials and tungsten materials that have a spin diffusion length no greater than about five times the thickness of the spin Hall effect base layer and a spin Hall angle at least about 0.05.

Abstract translation: 由ST-MRAM结构产生的ST-MRAM结构，用于制造ST-MRAM结构的方法和用于操作ST-MRAM器件的方法均利用自旋霍尔效应基础层， 由于自旋霍尔效应基极层内的横向开关电流而接触磁性自由层并且实现磁性自由层内的磁矩切换。 所得到的ST-MRAM器件使用通过磁阻堆栈的独立感测电流和感测电压，所述磁阻堆栈包括钉扎层，非磁性间隔层以及与自旋霍尔效应基层接触的磁性自由层。 用于自旋霍尔效应基础层的期望的非磁性导体材料包括某些类型的钽材料和钨材料，其具有不大于自旋霍尔效应基础层的厚度的大约五倍的自旋扩散长度和至少自旋霍尔角 约0.05。

公开(公告)号：WO2016011435A1

公开(公告)日：2016-01-21

申请号：PCT/US2015/041039

申请日：2015-07-17

Applicant: CORNELL UNIVERSITY

Inventor： BUHRMAN, Robert, A. ,  NGUYEN, Minh-hai ,  PAI, Chi-feng ,  RALPH, Daniel, C.

IPC: G11C11/16 ,  H01L21/02 ,  H01L29/82

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1697 ,  G11C11/18 ,  H01L27/222 ,  H01L29/66984 ,  H01L43/04 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10

Abstract: Devices or circuits based on spin torque transfer (STT) and Spin Hall effect are disclosed by using a spin Hall effect (SHE) metal layer coupled to a magnetic free layer for various applications. The efficiency or strength of the STT effect based on this combination of SHE and STT can be enhanced by an interface modification between the SHE metal layer and the magnetic free layer or by modifying or engineering the SHE metal layer by doping the SHE metal with certain impurities or other means.

Abstract translation: 通过使用耦合到无磁层的旋转霍尔效应（SHE）金属层用于各种应用来公开基于自旋转矩传递（STT）和旋转霍尔效应的装置或电路。 基于SHE和STT的这种组合的STT效应的效率或强度可以通过SHE金属层和无磁性层之间的界面改性或通过用某些杂质掺杂SHE金属来修饰或工程化SHE金属层来增强 或其他方式。

公开(公告)号：WO2014025838A1

公开(公告)日：2014-02-13

申请号：PCT/US2013/053874

申请日：2013-08-06

Applicant: CORNELL UNIVERSITY

Inventor： BUHRMAN, Robert, A. ,  RALPH, Daniel, C. ,  PAI, Chi-feng ,  LIU, Luqiao

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1697 ,  G11C11/18 ,  H01L27/228 ,  H01L43/04 ,  H01L43/06 ,  H01L43/065 ,  H01L43/08 ,  H01L43/10

Abstract: 3-terminal magnetic circuits and devices based on the spin-transfer torque (STT) effect via a combination of injection of spin-polarized electrons or charged particles by using a charge current in a spin Hall effect metal layer coupled to a free magnetic layer and application of a gate voltage to the free magnetic layer to manipulate the magnetization of the free magnetic layer for various applications, including non-volatile memory functions, logic functions and others. The charge current is applied to the spin Hall effect metal layer via first and second electrical terminals and the gate voltage is applied between a third electrical terminal and either of the first and second electrical terminals. The spin Hall effect metal layer can be adjacent to the free magnetic layer or in direct contact with the free magnetic layer to allow a spin-polarized current generated via a spin Hall effect under the charge current to enter the free magnetic layer. The disclosed 3-terminal magnetic circuits can also be applied to signal oscillator circuits and other applications.

Abstract translation: 通过使用耦合到自由磁性层的旋转霍尔效应金属层中的充电电流，通过注入自旋极化电子或带电粒子的组合，基于自旋转移转矩（STT）效应的3端子磁路和装置，以及 将栅极电压施加到自由磁性层以操纵用于各种应用的自由磁层的磁化，包括非易失性存储器功能，逻辑功能等。 通过第一和第二电端子将充电电流施加到自旋霍尔效应金属层，并且在第三电端子和第一和第二电端子中的任一个之间施加栅极电压。 旋转霍尔效应金属层可以与自由磁性层相邻或与自由磁性层直接接触，以允许在充电电流下通过旋转霍尔效应产生的自旋极化电流进入自由磁性层。 公开的三端磁路也可以应用于信号振荡电路和其他应用。

公开(公告)号：WO2015153989A1

公开(公告)日：2015-10-08

申请号：PCT/US2015/024276

申请日：2015-04-03

Applicant: CORNELL UNIVERSITY

Inventor： CONTE, Sean ,  RODRIGUEZ-CALERO, Gabriel, G. ,  TAN, Cen ,  HERNANDEZ-BURGOS, Kenneth ,  ABRUNA, Hector, D. ,  RITZERT, Nicole ,  RALPH, Daniel, C. ,  LI, Wan

IPC: B05D3/00

CPC classification number: G01N27/302 ,  B01L3/502707 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0887 ,  C25D9/02 ,  G01N27/4146 ,  G01N27/4167 ,  G02F1/155 ,  H01G9/035 ,  H01G9/042 ,  H01G9/145 ,  H01G9/2059 ,  H01G11/36 ,  H01G11/58 ,  H01L31/022466 ,  H01L51/0006 ,  H01M4/0404 ,  H01M4/0466 ,  H01M4/137 ,  H01M4/1399 ,  H01M4/608 ,  H01M4/663 ,  H01M6/02 ,  H01M10/02 ,  Y02E10/542 ,  Y02E60/13

Abstract: Electropolymerized polymer or copolymer films on a conducting substrate (e.g., graphene) and methods of making such films. The films may be part of multilayer structures. The films can be formed by anodic or cathodic electropolymerization of monomers. The films and structures (e.g., multilayer structures) can be used in devices such as, for example, electrochromic devices, electrical-energy storage devices, photo-voltaic devices, field-effect transistor devices, electrical devices, electronic devices, energy- generation devices, and microfluidic devices.

Abstract translation: 在导电基底（例如，石墨烯）上的电聚合的聚合物或共聚物膜以及制备这种膜的方法。 膜可以是多层结构的一部分。 膜可以通过单体的阳极或阴极电聚合形成。 膜和结构（例如，多层结构）可以用于例如电致变色器件，电能存储器件，光伏器件，场效应晶体管器件，电子器件，电子器件，能量产生器件 设备和微流体设备。

公开(公告)号：WO2014110603A1

公开(公告)日：2014-07-17

申请号：PCT/US2014/011555

申请日：2014-01-14

Applicant: CORNELL UNIVERSITY

Inventor： BUHRMAN, Robert, A. ,  LEE, Oukjae ,  RALPH, Daniel, C.

IPC: G11B20/00 ,  B32B15/00

CPC classification number: H03L7/26 ,  H03B15/006

Abstract: Techniques, systems, and devices are disclosed for implementing a quasi-linear spin-torque nano-oscillator based on exertion of a spin-transfer torque on the local magnetic moments in the magnetic layer and precession of the magnetic moments in the magnetic layer within a spin valve. Examples of spin-torque nano-oscillators (STNOs) are disclosed to use spin polarized currents to excite nano magnets that undergo persistent oscillations at RF or microwave frequencies. The spin currents are applied in a non-uniform manner to both excite the nano magnets into oscillations and generate dynamic damping at large amplitude as a feedback to reduce the nonlinearity associated with mixing amplitude and phase fluctuations.

Abstract translation: 公开了技术，系统和装置，用于基于在磁性层中的局部磁矩上施加自旋转移扭矩并且在磁性层内的磁性层中的磁矩的进动来实现准线性自旋扭矩纳秒振荡器 自旋阀。 公开了自旋扭矩纳米振荡器（STNO）的示例，以使用自旋极化电流来激发在RF或微波频率下经历持续振荡的纳米磁体。 以不均匀的方式施加自旋电流，以将纳米磁体激发成振荡并在大幅度下产生动态阻尼作为反馈，以减少与振幅和相位波动的混合相关的非线性。

公开(公告)号：WO2017218488A1

公开(公告)日：2017-12-21

申请号：PCT/US2017/037179

申请日：2017-06-13

Applicant: CORNELL UNIVERSITY

Inventor： PARK, Jiwoong ,  GAO, Hui ,  GUIMARAES, Marcos, H.d. ,  RALPH, Daniel, C. ,  KANG, Kibum ,  XIE, Saien

IPC: C23C14/22 ,  C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  H01L29/16 ,  H01L51/00

CPC classification number: H01L29/1606 ,  C23C14/22 ,  C23C16/305 ,  C23C16/44 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/778

Abstract: Apparatuses comprising a substrate; a monolayer graphene film disposed on at least a portion of the substrate; and a single-layer transition metal dichalcogenide (TMD) disposed only on the substrate and lateral edges of the monolayer graphene film, methods of making the apparatuses, and devices comprising one or more of the apparatuses. The apparatuses have a one-dimensional ohmic edge contact between the monolayer graphene and monolayer semiconducting TMDs.

Abstract translation: 包括基底的装置; 设置在所述衬底的至少一部分上的单层石墨烯膜; 以及仅设置在单层石墨烯膜的基底和侧边上的单层过渡金属二硫族化合物（TMD），制备所述装置的方法以及包含一个或多个所述装置的装置。 该装置在单层石墨烯和单层半导体TMD之间具有一维欧姆边缘接触。

公开(公告)号：WO2015102739A3

公开(公告)日：2015-07-09

申请号：PCT/US2014/061410

申请日：2014-10-20

Applicant: CORNELL UNIVERSITY

Inventor： RALPH, Daniel, C. ,  BUHRMAN, Robert, A.

IPC: H01L43/04 ,  H01L43/08

Abstract: A device based on a spin Hall effect and spin-transfer torque (STT) effect is provided to include a magnetic tunneling junction (MTJ) element including afree magnetic layer structured to have a magnetization direction that can be changed by spin-transfer torque; an electrically conducting magnetic layer structure exhibiting a spin Hall effect (SHE) and, in response to an applied in-plane charge current, generating a spin-polarized current of a magnetic moment oriented in a predetermined direction having both an in-plane magnetic moment component parallel to a surface of the electrically conducting magnetic layer structure and a perpendicular magnetic moment component perpendicular to the surface of the electrically conducting magnetic layer structure. The magnetization direction of the free magnetic layer is capable of being switched by the spin-polarized current via a spin-transfer torque (STT) effect. This device can be configured in a 3-terminal configuration.