公开(公告)号：WO2004017351A3

公开(公告)日：2004-07-29

申请号：PCT/US0325632

申请日：2003-08-13

Applicant: INTEL CORP

Inventor： MA QING

IPC: B81B3/00 ,  H01H1/00 ,  H01H37/54 ,  H01H61/00 ,  H01H61/01

CPC classification number: H01H1/0036 ,  H01H37/5409 ,  H01H2001/0042 ,  H01H2037/008

Abstract: A microelectromechanical system (MEMS) that includes a first electro-thermal actuator, a second electro-thermal actuator and a beam having a first side and a second side. The first electro-thermal actuator applies a force to the first side of the beam as current passes through the first electro-thermal actuator and the second electro-thermal actuator applies a force to the second side of the beam as current passes through the second electro-thermal actuator.

Abstract translation: 一种微机电系统（MEMS），其包括第一电热致动器，第二电热致动器和具有第一侧和第二侧的梁。 当电流通过第一电热致动器时，第一电热致动器向梁的第一侧施加力，并且当电流通过第二电热致动器时，第二电热致动器向梁的第二侧施加力 热致动器。

公开(公告)号：WO2004036744A3

公开(公告)日：2004-07-22

申请号：PCT/US0324142

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/205

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

Abstract translation: 薄膜体声波谐振器滤波器可以形成有在相同膜上形成的多个互连的串联和分流膜体声波谐振器。 每个薄膜体声波谐振器可以由共同的下导电层形成，该下导电层被限定为形成每个薄膜体声波谐振器的下电极。 可以限定公共顶部导电层以形成每个薄膜体声波谐振器的每个顶部电极。 常见的压电薄膜层可以或不可以被图案化，形成连续或不连续的薄膜。

公开(公告)号：WO03028212A3

公开(公告)日：2003-05-15

申请号：PCT/US0231157

申请日：2002-09-27

Applicant: INTEL CORP

Inventor： CHENG PENG ,  MA QING

IPC: B81B3/00 ,  H03H3/007 ,  H03H9/24 ,  H03H3/013

CPC classification number: B81B3/0078 ,  B81B2201/016 ,  B81B2203/019 ,  H03H3/0077 ,  H03H9/2463

Abstract: A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.

Abstract translation: 描述了一种微机电（MEM）谐振器，其包括衬底，耦合到衬底的微桥梁结构和邻近微桥梁结构设置的至少一个电极以引起梁的振动。 微桥梁结构包括支撑部分和形成在支撑部分之间的梁。 梁的中心区域的质量小于与支撑部分相邻的梁的区域的质量。

公开(公告)号：WO2007002547A2

公开(公告)日：2007-01-04

申请号：PCT/US2006024722

申请日：2006-06-22

Applicant: INTEL CORP ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  CHOU TSUNG-KUAN ,  ALTSHULER SEMEON ,  WEINFELD BOAZ

Inventor： HECK JOHN ,  MA QING ,  TRAN QUAN ,  CHOU TSUNG-KUAN ,  ALTSHULER SEMEON ,  WEINFELD BOAZ

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

Abstract translation: 一种制造通晶片通孔的装置和方法。 第一掩模形成在第一半导体管芯的第一侧上以限定第一通孔区域。 通过第一通孔区域中的第一半导体管芯蚀刻深的凹部，并且在包括深凹部的第一侧上形成覆盖金属层。 将橡皮布金属层从第一半导体管芯的第一侧的外表面移除，同时将橡皮布金属层的一部分保持在深凹部内。

公开(公告)号：WO2004030208A3

公开(公告)日：2004-07-22

申请号：PCT/US0329532

申请日：2003-09-17

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  MA QING ,  YANKOVICH ISRAEL ,  BUTLER RICHARD

IPC: H01L41/09 ,  H01L41/00 ,  H01L41/08 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H9/02 ,  H03H9/17

CPC classification number: H03H3/02 ,  H03H9/02133 ,  H03H9/174 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49135 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator formed on a substrate (710) includes a layer of piezoelectric material (735) having a first major surface, and a second major surface sandwiched between a first conductive (732) and a second conductive layer (736). The substrate on which the film bulk acoustic resonator is formed has an opening (750) therein which exposes the first conductive layer (732) of the film bulk acoustic resonator. The opening (750) is substantially in the shape of a parallelogram having a first pair of parallel sides (751, 752) and a second pair of parallel sides. One of the first pair of parallel sides makes an angle at other than 90 degrees with one of the second pair of parallel sides.

Abstract translation: 形成在基板（710）上的薄膜体声波谐振器包括具有第一主表面的压电材料层（735）和夹在第一导电层（732）和第二导电层（736）之间的第二主表面。 其上形成有膜体声波谐振器的基板在其中具有暴露膜体声波谐振器的第一导电层（732）的开口（750）。 开口（750）基本上为具有第一对平行边（751,752）和第二对平行边的平行四边形的形状。 第一对平行边之一与第二对平行边之一形成不同于90度的角度。

公开(公告)号：WO0223631A3

公开(公告)日：2002-06-06

申请号：PCT/US0128188

申请日：2001-09-07

Applicant: INTEL CORP ,  MA QING

Inventor： MA QING

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538

CPC classification number: H01L24/97 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/5389 ,  H01L23/564 ,  H01L24/19 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2224/82 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A packaging technology that fabricates a microelectronic package including build-up layers (118, 124, 136) having conductive traceses (124) on an encapsulated microelectronic die (102) and on other packaging material that surrounds the microelectronic die (112), wherein an moisture barrier structure is simultaneously formed with the conductive traces. An exemplary microelectronic package includes a microelectronic die having an active surface and at least one side. Packaging material(s) (112) is disposed adjacent the microelectronic die side (2), wherein the packaging material (112) includes at least one surface substantially planar to the microelectronic die active surface. A first dielectric material layer (118) may be disposed on at least a portion of the microelectronic die active surface and the encapsulation material surface. At least one conductive (124) trace is then formed on the first dielectric material layer to electrically contact the microelectronic die active surface. A barrier structure proximate an edge of the microelectronic package is formed simultaneously out of the same material as the conductive traces (124).

Abstract translation: 一种制造微电子封装的封装技术，包括在封装的微电子管芯（102）上以及围绕微电子管芯（112）的其它封装材料上具有导电迹线（124）的堆积层（118,124,136），其中 与导电迹线同时形成防潮结构。 示例性的微电子封装包括具有活性表面和至少一个侧面的微电子管芯。 包装材料（112）被设置在微电子管芯侧面（2）附近，其中包装材料（112）包括至少一个与微电子管芯有效表面平面的表面。 第一介电材料层（118）可以设置在微电子管芯有源表面和封装材料表面的至少一部分上。 然后在第一介电材料层上形成至少一个导电（124）迹线以电接触微电子管芯有源表面。 靠近微电子封装的边缘的阻挡结构与导电迹线（124）相同的材料同时形成。

公开(公告)号：WO2011126925A2

公开(公告)日：2011-10-13

申请号：PCT/US2011030808

申请日：2011-03-31

Applicant: INTEL CORP ,  MA QING ,  HE JUN ,  MORROW PATRICK ,  FISCHER PAUL B ,  BALAKRISHNAN SRIDHAR ,  RADHAKRISHNAN SATISH ,  ANDRYUSHCHENKO TATYANA TANYA ,  XU GUANGHAI

Inventor： MA QING ,  HE JUN ,  MORROW PATRICK ,  FISCHER PAUL B ,  BALAKRISHNAN SRIDHAR ,  RADHAKRISHNAN SATISH ,  ANDRYUSHCHENKO TATYANA TANYA ,  XU GUANGHAI

IPC: H05K3/32 ,  H05K1/18

CPC classification number: H01L24/19 ,  B23K1/0016 ,  H01L21/0334 ,  H01L24/11 ,  H01L2224/245 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/4015 ,  H05K2201/1028 ,  H01L2924/00

Abstract: The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.

Abstract translation: 本主题涉及制造微电子器件的领域。 在至少一个实施例中，本主题涉及形成具有其部分的互连，其在附接到外部设备之后在冷却期间从微电子器件脱粘。 脱粘部分允许互连件弯曲并吸收应力。

公开(公告)号：WO2007005701A2

公开(公告)日：2007-01-11

申请号：PCT/US2006025755

申请日：2006-06-29

Applicant: INTEL CORP ,  MA QING ,  WANG LI-PENG ,  RAO VALLURI

Inventor： MA QING ,  WANG LI-PENG ,  RAO VALLURI

CPC classification number: G01N29/022 ,  G01N29/036 ,  G01N33/54373 ,  G01N2291/021 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0426 ,  G01N2291/106

Abstract: An FBAR device may be chemically functionalized by depositing an interactive layer so that targeted chemicals are preferentially adsorbed. Such miniaturized chemical sensors may be combined with wireless network technology. For example, a chemical sensor may be integrated in a cell phone, PDA, a watch, or a car with wireless connection and GPS. Since such devices are widely populated, a national sensor network may be established. Consequently, a national toxicity map can be generated in real time. Detailed chemical information may be obtained, such as if a chemical is released by a source fixed on ground or by a moving object, or if is spread by explosives or by wind and so on.

Abstract translation: FBAR器件可以通过沉积交互层进行化学功能化，从而优先吸附目标化学物质。 这种小型化学传感器可以与无线网络技术组合。 例如，化学传感器可以集成在具有无线连接和GPS的手机，PDA，手表或汽车中。 由于这样的设备被广泛地填充，所以可以建立国家传感器网络。 因此，可以实时生成国家毒性图。 可以获得详细的化学信息，例如化学品被固定在地面上的源或被移动的物体释放，或者如果被爆炸物或风等传播。

公开(公告)号：WO0227788A2

公开(公告)日：2002-04-04

申请号：PCT/US0130157

申请日：2001-09-25

Applicant: INTEL CORP ,  MA QING ,  MAVEETY JAMES ,  TRAN QUAN

Inventor： MA QING ,  MAVEETY JAMES ,  TRAN QUAN

IPC: H01L23/36 ,  H01L23/367

CPC classification number: H01L23/36 ,  H01L23/3677 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/15151 ,  H01L2924/16151 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A microelectronic die is aligned with a package substrate and attached to it using solder balls. A specially shaped heat spreader, preferably with a coefficient of thermal expansion (CTE) similar to that of silicon, is attached to the back side of the die using a heat-conducting adhesive. An epoxy-based material is flowed into the gap between the die, the substrate, and the heat spreader via a through-hole in either the substrate or the heat spreader using a dispense process or a transfer molding process. By positioning the heat spreader to abut the die corners and/or edges, the stresses on the die are substantially reduced or eliminated.

Abstract translation: 微电子管芯与封装衬底对准并使用焊球附着于其上。 使用导热粘合剂将特定形状的散热器（优选地具有与硅的热膨胀系数（CTE）相似的热膨胀系数（CTE））附接到管芯的背面。 使用分配过程或传递模塑过程，基于环氧树脂的材料经由基板或散热器中的通孔流入管芯，基板和散热器之间的间隙中。 通过将散热器定位成邻接模具拐角和/或边缘，模具上的应力被显着减小或消除。

公开(公告)号：WO0215266A2

公开(公告)日：2002-02-21

申请号：PCT/US0125060

申请日：2001-08-10

Applicant: INTEL CORP

Inventor： MU XIAO-CHUN ,  MA QING ,  FUJIMOTO HARRY

IPC: H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L23/31 ,  H01L23/538 ,  H05K1/18 ,  H05K3/46 ,  H01L23/00

CPC classification number: H01L21/568 ,  H01L21/56 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/4334 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K1/185 ,  H05K3/4602 ,  H01L2224/82 ,  H01L2224/83 ,  H01L2924/00

Abstract: A microelectronic package including a microelectronic die having an active surface and at least one side. An encapsulation material is disposed adjacent the microelectronic die side(s), wherein the encapsulation material includes at least one surface substantially planar to the microelectronic die active surface. A first dielectric material layer may be disposed on at least a portion of the microelectronic die active surface and the encapsulation material surface. At least one conductive trace is then disposed on the first dielectric material layer. The conductive trace(s) is in electrical contact with the microelectronic die active surface. At least one conductive trace extends adjacent the microelectronic die active surface and adjacent the encapsulation material surface.

Abstract translation: 一种微电子封装，其包括具有活性表面和至少一个侧面的微电子管芯。 封装材料邻近微电子管芯侧设置，其中封装材料包括至少一个与微电子管芯有效表面平面的表面。 第一介电材料层可以设置在微电子管芯有源表面和封装材料表面的至少一部分上。 然后至少一个导电迹线设置在第一介电材料层上。 导电迹线与微电子管芯有源表面电接触。 至少一个导电迹线在微电子管芯有源表面附近延伸并与封装材料表面相邻。