Abstract:
A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3x10 16 cm -3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
Abstract translation:功率放大器模块包括功率放大器,其包括具有集电极的GaAs双极晶体管,邻接集电极的基极和发射极,该集电极在与基极的接合处具有至少约3×10 16 cm -3的掺杂浓度,集电极 还具有至少一种其中掺杂浓度从基底增加的第一分级; 以及由功率放大器驱动的RF传输线,RF传输线包括在导电层上的导电层和精整电镀,精加工镀层包括金层,接近金层的钯层和靠近金层的扩散阻挡层 钯层,扩散阻挡层包括镍,并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。