Abstract:
This disclosure relates to a harmonic termination circuit that is separate from a load line. In one embodiment, the load line is configured to match an impedance at the power amplifier output at a fundamental frequency of the power amplifier output and the harmonic termination circuit is configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. According to certain embodiments, the load line and the harmonic termination circuit can be electrically coupled to the power amplifier output external to a power amplifier die via different output pins of the power amplifier die.
Abstract:
A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3x10 16 cm -3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
Abstract translation:功率放大器模块包括功率放大器,其包括具有集电极的GaAs双极晶体管,邻接集电极的基极和发射极,该集电极在与基极的接合处具有至少约3×10 16 cm -3的掺杂浓度,集电极 还具有至少一种其中掺杂浓度从基底增加的第一分级; 以及由功率放大器驱动的RF传输线,RF传输线包括在导电层上的导电层和精整电镀,精加工镀层包括金层,接近金层的钯层和靠近金层的扩散阻挡层 钯层,扩散阻挡层包括镍,并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。
Abstract:
Disclosed are devices and methods for improving power added efficiency and linearity of radio-frequency power amplifiers implemented in flip-chip configurations. In some embodiments, a harmonic termination circuit can be provided so as to be separate from an output matching network configured to provide impedance matching at a fundamental frequency. The harmonic termination circuit can be configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. Such a configuration of separate fundamental matching network and harmonic termination circuit allows each to be tuned separately to thereby improve performance parameters such as power added efficiency and linearity.
Abstract:
An electronic device includes an electromagnetic interference shield having a layer of conductive material covering at least a portion of the electronic device and having a skin depth of less than 2 pm for electromagnetic signals having frequencies in a kilohertz range.
Abstract:
Aspects of the present disclosure relate to determining a layout of a racetrack that forms part of an RF isolation structure of a packaged module and the resulting RF isolation structures. Locations of where the racetrack can be adjusted (for example, narrowed) and/or removed without significantly degrading the EMI performance of the RF isolation structure can be identified. In certain embodiments, a portion of the racetrack can be removed to create a break and/or a portion of the racetrack can be narrowed in a selected area.