公开(公告)号：WO1995022838A1

公开(公告)日：1995-08-24

申请号：PCT/SE1995000152

申请日：1995-02-14

Applicant: TELEFONAKTIEBOLAGET LM ERICSSON

Inventor： TELEFONAKTIEBOLAGET LM ERICSSON ,  HONG, Sam-Hyo

IPC: H01L23/532

CPC classification number: H01L24/13 ,  H01L21/76838 ,  H01L21/76885 ,  H01L23/3171 ,  H01L23/485 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53252 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/11472 ,  H01L2224/1191 ,  H01L2224/13006 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/12033 ,  H01L2924/14 ,  H01L2924/351 ,  Y10S257/915 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 mu m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.

Abstract translation: 描述了用于微电路互连的PtSi / TiW / TiW（N）/ Au（I型）和PtSi / TiW / TiW（N）/ TiW / Au（II型）和相关工艺的两种金属化方案。 金属化方案和工艺能够实现金属间距小至1.5μm，甚至更小的IC互连。 金属化方案对于连续高温和高电流操作是可靠的。