Abstract:
The present invention is the process comprising forming a stable mixture comprising I(CF 2 ) n I, wherein n is at least 3 and at least one of I(CF 2 ) n I, wherein n is 1 or 2, as a contaminant in said mixture and heating said mixture to a temperature of at least 220C to reduce the amount of said contaminant to be no greater than 1% when said contaminant is ICF 2 I (n=1) and no greater than 0.1% when said contaminant is ICF 2 CF 2 I (n=2)
Abstract:
The invention relates to compounds with benzindenofluorene base bodies and to the use thereof in electronic devices, in particular in organic electroluminescent devices.
Abstract:
A method to synthesis molecules is provided. The method employs a catalyst for a cross- coupling react ion to obtain the molecule. The method comprises coupling boronic acid and halide in presence of the catalyst having graphite oxide supported palladium nanoparticles, a solvent and a base by heating. The heating is performed at a temperature lower than the temperature at which the graphite oxide deforms. The molecule is a biaryl. The method further provides obtaining complexs such as boscalid, telmisartan, valsartan, and SPPARMγ.
Abstract:
The present invention relates to catalyst complexes comprising palladium (Pd) and at least one spiro-1,1 '-biindane-7,7'- bisphosphine oxide ligand as disclosed herein, and their use. The present invention is further directed to the asymmetric Pd-catalyzed covalent carbon-carbon single bond formation from aryl, heteroaryl and alkenyl triflates and halides and olefins utilising the said catalyst complexes.
Abstract:
The present invention relates to the single-step process for the synthesis of aryl olefin compounds of Formula (1) by reacting aryl aldehydes with alkyl aldehydes in presence of malononitrile and acid or base or salt, optionally in presence of solvent.
Abstract:
Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
Abstract:
The present invention provides a novel organic compound having a high quantum yield and a high color purity. Provided is an organic compound represented by Formula (1) described in Claim 1. In Formula (1), R 1 to R 20 are each independently selected from hydrogen atoms, halogen atoms, substituted or unsubstituted alkyl groups, substituted or unsubstituted alkoxy groups, substituted or unsubstituted amino groups, substituted or unsubstituted aryl groups, substituted or unsubstituted heterocyclic groups, substituted or unsubstituted aryloxy groups, substituted or unsubstituted thiol groups, silyl groups, and cyano groups.
Abstract:
Disclosed herein are environmentally benign surfactants including TPGS-550-M, TPGS-750-M and TPGS-1000-M that comprises of diesters composed of racemic α- tocopherol, MPEG-550, MPEG-750 and MPEG- 1000, respectively, and a succinic acid fragment. Also disclosed are novel and efficient methods for their synthesis. The surfactants are designed as an effective nanomicelle-forming species for dissolution of hydrophobic compounds and composition and for general use in metal-catalyzed cross-coupling reactions in water.